Darlington Transistors Information

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Darlington transistors are circuits that combine two bipolar transistors in a single
device. They provide high current gain and require less space than configurations that
use two discrete transistors.

In Darlington pairs, transistor collectors are tied together and the emitter of the first
transistor is directly coupled to the base of the second transistor.

The total gain, which is often 1000 or more, is the product of the gain of the individual
transistors.

Compared to single transistor configurations, Darlington transistor pairs have more

phase shift at high frequencies and can become unstable with negative feedback more
easily.

Darlington transistors also have a higher base-emitter voltage, which is the sum of both
base emitter voltages. Sidney Darlington, an engineer at Bell Laboratories in the 1950s,
is credited with first combing two transistors on a single chip.

Performance Specifications

Selecting Darlington transistors requires an analysis of performance

specifications. The common emitter current gain, the ratio of collector current to base
current ( ), characterizes the amplifying ability of bipolar transistors.

Collector-to-emitter breakdown voltage ( ) is the maximum voltage than can be

applied continuously in the reverse direction of the collector junction when the emitter
is open. Other important considerations include collector-to-base breakdown voltage (
) and maximum collector current ( ).
Current gain bandwidth product ( ) is the frequency at which the common emitter
current gain is in unity. Power dissipation ( ), which is usually expressed in watts or
milliwatts, is the total power consumption of the device.

Operating temperature ( ) is the junctions full-required range of ambient operating

temperatures. Some Darlington transistors support a specific temperature range and
feature mechanical and electrical specifications that are suitable for commercial or
industrial applications. Other devices meet screening levels for military specifications
(MIL-SPEC).

Features

Darlington transistors vary in terms of polarity, packaging, and packing methods.

NPN is a physical bipolar junction transistor (BJT) arrangement in which the emitter and
the collector are made of N-type material and the base is made of P-type material.

By contrast, PNP is a BJT arrangement in which the emitter and the collector are made
of P-type material and the base is made of N-type material.

In terms of packaging, Darlington transistors are available in small outline (SO),

transistor outline (TO), small outline transistor (SOT), discrete packaging (DPAK), and
flatpack.

Darlington transistors often use either surface mount technology (SMT) or through hole
technology (SMT) and vary in terms of the number of leads. Packaging methods for
Darlington transistors include tape reels, rails, bulk packs, tubes, and trays.