FJAF6810D

FJAF6810D

High Voltage Color Display Horizontal

Deflection Output (Damper Diode Built-In)
High Collector-Base Breakdown Voltage : BVCBO = 1500V
High Switching Speed : tF(typ.) =0.1s
For Color TV

TO-3PF
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit

NPN Triple Diffused Planar Silicon Transistor 35 typ.

Absolute Maximum Ratings TC=25C unless otherwise noted E

Symbol Parameter Rating Units

VCBO Collector-Base Voltage 1500 V
VCEO Collector-Emitter Voltage 750 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 10 A
ICP* Collector Current (Pulse) 20 A
PC Collector Dissipation 60 W
TJ Junction Temperature 150 C
TSTG Storage Temperature -55 ~ 150 C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Electrical Characteristics TC=25C unless otherwise noted

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Symbol Parameter Test Conditions Min Typ Max Units
ICES Collector Cut-off Current VCB=1500V, RBE=0 1 mA
ICBO Collector Cut-off Current VCB=800V, IE=0 10 A
IEBO Emitter Cut-off Current VEB=4V, IC=0 40 250 mA
BVEBO Base-Emitter Breakdown Voltage IE=300mA, IC=0 6 V
hFE1 DC Current Gain VCE=5V, IC=1A 7
hFE2 VCE=5V, IC=6A 5 8
VCE(sat) Collector-Emitter Saturation Voltage IC=6A, IB=1.5A 3 V
VBE(sat) Base-Emitter Saturation Voltage IC=6A, IB=1.5A 1.5 V
VF Damper Diode Turn On Voltage IF = 6A 2 V
tSTG* Storage Time VCC=200V, IC=6A, RL=33 3 s
tF* Fall Time IB1=1.2A, IB2= - 2.4A 0.2 s
* Pulse Test: PW=20s, duty Cycle=1% Pulsed

Thermal Characteristics TC=25C unless otherwise noted

Symbol Parameter Typ Max Units
RjC Thermal Resistance, Junction to Case 2.08 C/W

2001 Fairchild Semiconductor Corporation Rev. B, August 2001

 FJAF6810D
Typical Characteristics

10 100
IB=2.0A
VCE = 5V

8
IC [A], COLLECTOR CURRENT

hFE, DC CURRENT GAIN

o
IB=1.0A Ta = 25 C
IB=0.8A
6 o
Ta = 125 C
IB=0.6A
10
IB=0.4A
4
o
IB=0.2A Ta = - 25 C

0 1
0 2 4 6 8 10 12 14 16 18 0.1 1 10

VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

10

IC = 5 IB IC = 3 IB
VCE(sat) [V], SATURATIOM VOLTAGE

VCE(sat), SATURATION CURRENT

10

1
1

o
Ta = 125 C
o o
Ta = 125 C Ta = 25 C
o
Ta = 25 C o
Ta = - 25 C
o 0.1
Ta = - 25 C

0.1
1 10 1 10

IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

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20 10

18
IB1 = 1.2A, IC = 6A
VCC = 200V
IC [A], COLLECTOR CURRENT

16
tF & tSTG [s], SWITCHING TIME

14 tSTG
1
12

10

tF
8
o 0.1
Ta = 25 C
6

4
o
Ta = - 25 C
2
o
Ta = 125 C
0 0.01
0.0 0.3 0.6 0.9 1.2 1.5 1 10

VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT

Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time

2001 Fairchild Semiconductor Corporation Rev. B, August 2001

 FJAF6810D
Typical Characteristics (Continued)

10 10

tSTG
tF & tSTG [s], SWITCHING TIME

tF & tSTG [s], SWITCHING TIME

tSTG

1 1

tF

tF
0.1 0.1

IB2 = -2.4A, IC = 6A IB1 = 1.2A, IB2 = -2.4A

VCC = 200V VCC = 200V
0.01 0.01
1 10 1 10

IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT

Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time

30

RB2 = 0, IB1 = 15A

VCC = 30V, L = 200H
25
IC [A], COLLECTOR CURRENT

100

20
IC (Pulse) t = 100ms t = 10ms
IC [A], COLLECTOR CURRENT

10
15
IC (DC) t = 1ms

10
VBE(off) = -6V 1

5
VBE(off) = -3V

0.1
0
10 100 1000 10000
o
VCE [V], COLLECTOR-EMITTER VOLTAGE TC = 25 C
Single Pulse
0.01
1 10 100 1000 10000

Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area
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80

70
PC [W], POWER DISSIPATION

60

50

40

30

20

10

0
0 25 50 75 100 125 150 175

o
TC [ C], CASE TEMPERATURE

Figure 11. Power Derating

2001 Fairchild Semiconductor Corporation Rev. B, August 2001

 FJAF6810D
Package Demensions

TO-3PF

5.50 0.20
3.00 0.20
4.50 0.20

15.50 0.20 3.60 0.20

(1.50)

10.00 0.20

10

23.00 0.20
26.50 0.20

22.00 0.20
0.85 0.03
14.50 0.20
16.50 0.20

16.50 0.20

1.50 0.20
2.00 0.20

2.50 0.20

2.00 0.20
2.00 0.20 2.00 0.20 2.00 0.20
14.80 0.20

4.00 0.20

+0.20
3.30 0.20
0.75 0.10

5.45TYP 5.45TYP +0.20

[5.45 0.30] [5.45 0.30] 0.90 0.10

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5.50 0.20
3.30 0.20

2.00 0.20

Dimensions in Millimeters

2001 Fairchild Semiconductor Corporation Rev. B, August 2001

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx FAST OPTOLOGIC SMART START VCX

Bottomless FASTr OPTOPLANAR STAR*POWER
CoolFET FRFET PACMAN Stealth
CROSSVOLT GlobalOptoisolator POP SuperSOT-3
DenseTrench GTO Power247 SuperSOT-6
DOME HiSeC PowerTrench SuperSOT-8
EcoSPARK ISOPLANAR QFET SyncFET
E2CMOS LittleFET QS TruTranslation
EnSigna MicroFET QT Optoelectronics TinyLogic
FACT MicroPak Quiet Series UHC
FACT Quiet Series MICROWIRE SLIENT SWITCHER UltraFET
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
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Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation Rev. H4