Letter

pubs.acs.org/NanoLett

van der Waals Heterostructures with High Accuracy Rotational

Alignment
Kyounghwan Kim, Matthew Yankowitz, Babak Fallahazad, Sangwoo Kang, Hema C. P. Movva,
Shengqiang Huang, Stefano Larentis, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe,
Sanjay K. Banerjee, Brian J. LeRoy, and Emanuel Tutuc*,

Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin,
Texas 78758, United States

Physics Department, University of Arizona, Tucson, Arizona 85721, United States

National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
*
S Supporting Information

ABSTRACT: We describe the realization of van der Waals

(vdW) heterostructures with accurate rotational alignment of
individual layer crystal axes. We illustrate the approach by
demonstrating a Bernal-stacked bilayer graphene formed using
successive transfers of monolayer graphene akes. The Raman
spectra of this articial bilayer graphene possess a wide 2D band,
which is best t by four Lorentzians, consistent with Bernal
stacking. Scanning tunneling microscopy reveals no moire
pattern on the articial bilayer graphene, and tunneling
spectroscopy as a function of gate voltage reveals a constant
density of states, also in agreement with Bernal stacking. In
addition, electron transport probed in dual-gated samples reveals
a band gap opening as a function of transverse electric eld. To
illustrate the applicability of this technique to realize vdW heterostructuctures in which the functionality is critically dependent on
rotational alignment, we demonstrate resonant tunneling double bilayer graphene heterostructures separated by hexagonal
boron-nitride dielectric.
KEYWORDS: Two-dimensional, heterostructure, graphene, boron-nitride, resonant tunneling

V an der Waals (vdW) heterostructures consisting of two-

dimensional materials such as graphene, hexagonal boron-
nitride (hBN), and transition metal dichalcogenides (TMDs)
have gained increased scrutiny recently owing to novel
electronic states and applications that may be realized in
these heterostructures.13 Examples include the observation of
moire patterns,47 Hofstadter buttery in graphenehBN
heterostructures with small twist angles,810 and resonant
tunneling in rotationally aligned double layer heterostruc-
tures.1113 To best explore the electronic properties of vdW
heterostructures, two key ingredients are necessary: a layer-by-
layer transfer or pick-up process that minimizes or eliminates
the incorporation of residues at the interface, and control of the
crystal axes rotational alignment and registration of successively
transferred layers. The latter ingredient, while ubiquitous in
epitaxially grown heterostructures, is arguably an important
obstacle in realizing electronically coupled, crystallographically
registered vdW heterostructures using a layer-by-layer transfer
approach.
The rotational alignment of the crystal axes in vdW
heterostructures realized by successive layer transfers has
been achieved thus far by using the straight edges of the akes
as crystallographic references. For example, the straight edges of
mechanically exfoliated graphene akes are assumed to be
parallel to the zigzag or armchair crystal orientations, and they
can be dierentiated from each other using polarized Raman
spectroscopy. 14 Although this method may provide a
straightforward and nondestructive way to determine the
crystal orientation of the graphene akes, the precision of this
method for accurate rotational alignments is limited because
the edges are not always straight, nor purely zigzag or armchair,
but often a mixture of both zigzag and armchair segments,
which complicates the crystal axes identication. In addition,
the nite edge size combined with optical resolution challenges
limits the angle determination accuracy to about 2 for typical
ake sizes.
In this study, we introduce a transfer technique that provides
a better control of the heterostructure fabrication and in
particular allows for accurate crystal axes alignment. The new
technique does not impose any limits on the size or shape of
Received: December 24, 2015
Revised: January 30, 2016
Published: February 9, 2016

2016 American Chemical Society 1989 DOI: 10.1021/acs.nanolett.5b05263

Nano Lett. 2016, 16, 19891995
Nano Letters
the akes as it relies solely on well-dened metallic alignment
marks on the substrate instead of the straight edges of the akes
for the accurate rotational alignment. We illustrate the
technique by realizing Bernal stacked bilayer graphene using
successive transfers of two monolayer graphene akes with
rotationally aligned crystal axes and also demonstrate resonant
tunneling in rotational aligned double bilayer graphene
heterostructures separated by hBN.
The rotationally aligned transfer relies on a controlled two-
dimensional ake pick-up technique, in which a micron size
ake can be selectively detached from the exfoliation substrate
using a small contact area hemispherical handle substrate,
which leaves the akes in proximity intact. Figure 1, panel a
Figure 1. (a) Illustration of the hemispherical handle substrate used
for selective ake pick-up and transfer. (b, c) Schematic and (d, e)
corresponding optical micrographs of the ake pick-up procedure. (b,
d) The handle substrate is brought into contact with an exfoliated hBN
ake. The contact area marked by black dashed line is approximately
100 m 100 m. (c) Schematic and (e) optical micrograph of the
hBN transfer to a handle substrate.
illustrates the hemispherical, bulb-like handle substrate that can
be fabricated from a small epoxy or polydimethylsiloxane
(PDMS) droplet deposited onto a transparent base substrate
such as glass or a planar PDMS mold. The contact area
between the handle substrate and the ake is determined by the
hemisphere radius and contact force and can be as small as 50
m 50 m. The hemisphere can be coated with a adhesion-
improving polymer such as poly(methyl methacrylate)
(PMMA), poly(vinyl alcohol) (PVA), or polypropylene
carbonate (PPC). Figure 1, panels b and c illustrate
schematically the selective ake pick-up using a hemispherical
epoxy handle, along with an example of an hBN ake pick-up
(Figure 1d), and transfer (Figure 1e). More details on the
1990
Letter
hemispherical handle fabrication can be found in the
Supporting Information Figures S1 and S2.
Figure 2, panels ad describe the fabrication process ow of
a vdW heterostructure consisting of two rotationally aligned
monolayer graphene akes along with the corresponding
optical micrographs (Figure 2fh). This heterostructure is
chosen because the rotational alignment between the two layers
can be probed postfabrication by Raman spectroscopy,
scanning tunneling microscopy (STM), and electron transport,
with distinct signatures between a rotationally aligned or
twisted bilayer. To create this articial bilayer graphene, we rst
exfoliate monolayer graphene and hBN on separate SiO2/Si
substrates. The monolayer graphene is conrmed by optical
contrast and Raman spectroscopy. A hemispherical handle
consisting of PVA-coated epoxy is used to rst pick-up the hBN
ake, which will serve as a substrate of the vdW heterostructure.
The hBN is then aligned partially with a graphene monolayer
on SiO2/Si under an optical microscope, the hemispherical
handle is brought in contact with the substrate, and it is
subsequently detached. Thanks to a stronger vdW bonding
between graphene and hBN on one hand, and graphene and
PVA on the other, the monolayer graphene ake is sectioned,
and the area making contact with the hBN is selectively
detached (Figure 2b). Alternatively, the starting ake can also
be sectioned before the transfer using, for example, electron
beam lithography (EBL) and etching or using an atomic force
microscope (AFM) tip. Figure 2, panel g shows the section of
the graphene ake remaining on the SiO2/Si substrate. Next,
the hemispherical handle is translated laterally, brought in
contact with the substrate, and detached to pick up the
remaining graphene section (Figure 2d). The resulting double
graphene layer on hBN heterostructure has a region where the
two graphene monolayers overlap. Thanks to the single crystal
nature of the monolayer graphene, combined with spatial
translation of the transfer process, the two graphene
monolayers are expected to have rotationally aligned crystal
axes.
Figure 3 describes the results of the Raman spectroscopy
measurements on the vdW heterostructure of Figure 2 after it
was transferred onto a SiO2 substrate with the graphene layers
facing up (see details in the Supporting Information Figure
S3a). Figure 3, panel a shows the optical micrograph of the
graphene/graphene/hBN vdW heterostructure where the edges
of individual graphene akes are marked with dashed lines. We
use the graphene Raman 2D band full width at half-maximum
(FWHM) in the overlapping region for an initial assessment of
the rotational alignment between the two monolayer graphene
akes. For monolayer graphene, the 2D band FWHM is 24
cm1, while for a Bernal stacked bilayer graphene, the 2D band
FWHM is approximately twice as large (50 cm 1).15
Furthermore, because Bernal stacked bilayer graphene has
two electronic energy bands near the neutrality point, four
distinct scattering processes contribute to the Raman 2D band,
which is best t by a superposition of four Lorentzians, and is
blue-shifted in comparison to monolayer graphene. The Raman
2D band FWHM of a twisted bilayer graphene is expected to be
close to the nominal value of a Bernal stacked bilayer for small
twist angles, and decrease with increasing the twist angle, albeit
not monotonically.16 Figure 3, panel b shows the Raman 2D
band FWHM map of panel a sample, measured using a 532 nm
excitation wavelength with a spot size of 1 m and a power of 5
mW. Figure 3, panel b data show two distinct regions in the
area covered by graphene akes: one region characterized by a
DOI: 10.1021/acs.nanolett.5b05263
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Nano Letters Letter

Figure 2. Rotationally aligned graphene double layer realized by successive transfers from a monolayer graphene using a hemispherical handle
substrate. (a, e) Schematic of layer pick-up. The red box represents a zoom-in view of the hemispherical handle substrate. (bd) Schematics and (f
h) corresponding optical micrographs of successive stacking steps. Panels b and f illustrate a partial contact of the handle with the bottom graphene.
Panels c and g show the handle substrate release with one graphene section detached. Panels d and h illustrate the second contact with the handle
translated laterally to create an overlap region of the two graphene layers. The two images in panels fh represent the same optical micrographs, with
the contrast enhanced and the graphene contour marked in the right-hand image. Because the two graphene layers are obtained from a single grain,
their principal crystal axes remain aligned as long as the handle is not rotated with respect to the bottom substrate.

Figure 3. Raman spectroscopy characterization of rotationally aligned double layer graphene. (a) Optical micrograph of rotationally aligned double
layer graphene on hBN heterostructure. The blue and red dashed lines mark the boundaries of two monolayer graphene akes. (b) Contour plot of
the Raman 2D band FWHM corresponding to the optical micrograph of panel a. The data show a signicantly wider 2D band in the overlap region
in comparison to the nonoverlapped regions. (c) Example of Raman spectra acquired at the locations marked in panel b. The spectra at locations 1
and 3 show a 2D band FWHM of 25 cm1, while the spectrum at location 2, in the overlap region, has a 2D band FWHM of 50 cm1. The 2D
band spectra at locations 1 and 3 can be t with a single Lorentzian, while the spectrum at location 2 is best t by four Lorentzians, consistent with
Bernal stacked bilayer graphene.

2D band FWHM of 25 cm1, corresponding to the
nonoverlapping sections of the monolayer graphene akes,
and one region characterized by a FWHM of 50 cm1,
corresponding to the overlapping section. The 2D band
FWHM in the overlapping region is consistent with that of
Bernal stacked bilayer graphene, suggesting that the rotational
misalignment between the two graphene layers is small.
Figure 3, panel c shows sample representative Raman spectra
of the three regions as indicated in Figure 3, panel b. Each
Raman spectrum shows three district peaks at 1364 cm1,
corresponding to the hBN E2g band, at 1580 cm1,
corresponding to graphene G band, and at 2700 cm1,
corresponding to graphene 2D band. The 2D band at spots 1
and 3 can be t with a single Lorentizan peak, as expected for
monolayer graphene, while the 2D band probed in the
overlapping region cannot be t with a single Lorentzian
peak. The best t to the 2D band in the overlapping region is
achieved with four Lorentzians, each with FWHM of 24 cm1
consistent with the 2D band of Bernal stacked bilayer graphene.
We note that in spite of the good agreement between the
Raman spectra in the overlapping region, and that of Bernal
stacked bilayer graphene, Raman spectroscopy cannot clearly
1991
dierentiate Bernal stacked bilayer graphene from twisted
bilayer with rotational misalignment angles smaller than 3.16
To better quantify the alignment of our vdW hetero-
structures, the rotationally aligned double monolayer graphene
of Figure 3 was investigated using scanning probe microscopy.
Metal contacts were patterned to allow a bias to be applied
between the sample and the substrate, which served as back-
gate. We characterized this sample on the atomic scale using
STM and spectroscopy. All the STM measurements were
performed in ultrahigh vacuum at a temperature of 4.5 K.
Figure 4, panel a shows a 200 nm 200 nm topographic map
taken on the overlapping bilayer region of the sample. No
moire pattern is observed, indicating that the two layers of
graphene are in essentially perfect rotational alignment. We
acquired atomically resolved topography to further characterize
the dierence between the monolayer and bilayer regions in
Figure 4, panels b and c, respectively. The topography is easily
distinguishable between the two, with the monolayer region
appearing hexagonal and the overlapped, bilayer region
appearing roughly triangular as anticipated for Bernal-stacked
bilayer graphene.17 Finally, we examined the spectroscopic
signatures of both the monolayer and bilayer regions.
DOI: 10.1021/acs.nanolett.5b05263
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Nano Letters Letter

Figure 4. Atomic-scale topographic and electronic characterization. (a) STM topography of the bilayer region of the sample. No moire pattern is
observed, indicating that the two graphene layers are perfectly aligned. The scale bar is 30 nm. Atomically resolved topography of the (b) monolayer
and (c) bilayer regions of the sample. The appearance of the atomic lattice is easily distinguishable and appears hexagonal in the monolayer region
and triangular in the bilayer region. The scale bar is 1 nm for both. The sample voltage is +300 mV and tunnel current is 150 pA for all images.
Normalized (dI/dV)/(I/V) spectroscopy as a function of gate voltage acquired on the (d) monolayer and (e) bilayer regions of the sample. The
white dotted lines roughly mark the position of the (d) Dirac point and (e) charge neutrality point. (f) Contour plot of resistivity () measured as a
function of VBG and VTG in a dual-gated bilayer graphene realized by successive transfers of rotationally aligned monolayer graphene. The density and
E-eld axes are indicated with dashed white lines. (g) versus E measured at charge neutrality and at dierent temperatures.

Dierential conductance (dI/dV) spectroscopy measurements
were acquired by turning o the feedback circuit and measuring
the tunneling current (I) while adding a small 5 mV signal to
the sample voltage (V) at a 563 Hz frequency. Figure 4, panels
d and e show the normalized (dI/dV)/(I/V) spectroscopy as a
function of gate voltage in the monolayer and bilayer regions of
the sample. The white dotted lines roughly mark the sample
voltage of the minimum signal in the normalized dI/dV plot,
representing the position of the charge neutrality point (CNP).
In monolayer graphene, the CNP (or equivalently Dirac point)
disperses as the square root of gate voltage due to the linear
band structure of graphene.18 However, the band structure of
Bernal-stacked bilayer graphene is quadratic at low energy so
the CNP is instead expected to disperse linearly with gate
voltage. Indeed, this is exactly what we observe in the
experimental gate bias maps. Assuming a back gate capacitance
of 9.5 nF cm2, corresponding to the 280 nm SiO2 dielectric in
series with a 52 nm thick hBN substrate, we extract a Fermi
velocity in the monolayer region of vF = 1.05 106 m/s. For
the bilayer region, the CNP shifts roughly linearly in sample
voltage by 1.9 mV per volt on the back gate. This is in
reasonably good agreement with prior studies of bilayer
graphene1921 and corresponds to a Fermi velocity of vF =
0.95 106 m/s (assuming an interlayer hopping energy 1 =
0.38 eV) or equivalently to a constant density of states 2m*/
(2) corresponding to a four-fold degenerate parabolic
energy-momentum dispersion with eective mass m* =
0.037m0; m0 is the bare electron mass, and is the reduced
Planck constant. Taken together, the topographic and
electronic signatures of the bilayer region strongly suggest it
is in a perfectly aligned, Bernal-stacked conguration.
To further verify the realization of Bernal stacked bilayer
graphene by successive transfers of rotationally aligned
1992
graphene monolayers, we fabricated and characterized a
separate, dual gated sample encapsulated in hBN dielectric.
The heterostructure is realized using a similar process to Figure
4, panels ae sample, but by adding an extra hBN pick-up after
the two consecutive monolayer graphene, which will serve as
top gate dielectric. To complete the device fabrication, a top
gate electrode is dened on the overlap region by EBL followed
by metallization of Cr (4 nm)/Au (40 nm). By using the top
gate electrode and PMMA as etch mask, a Hall bar is dened by
CHF3 plasma etching. A sequence of EBL, metal deposition,
and lift o is used to create metal contacts to the graphene
bilayer.
The dual-gated bilayer device allows independent control of
the carrier density (n) and transverse electric eld (E) using the
top (VTG) and bottom gate (VBG) biases, which in turn
provides further insight into the bilayer graphene stacking
because the resistivity () dependence on total carrier density
and E-eld is distinctly dierent for a Bernal stacked bilayer
graphene compared to a twisted bilayer graphene. Indeed, a
Bernal stacked bilayer graphene has a parabolic energy-
momentum dispersion with a tunable band gap as a function
of the applied E-eld, while a twisted bilayer graphene behaves
largely as two decoupled graphene monolayers in which the
applied E-eld displaces the charge neutrality points of the two
monolayers. Figure 4, panel f shows the contour plot of as a
function of VBG and VTG measured at 1.5 K. When measured as
a function of n, the resistivity has one maximum, evincing a
single charge neutrality point, which depends linearly on VBG
and VTG. Along the charge neutrality line, the resistivity
increases markedly with the transverse E-eld and shows an
insulating temperature dependence as illustrated in Figure 4,
panel g consistent with the band gap opening in Bernal stacked
bilayer graphene.2224 In contrast, a twisted bilayer graphene
DOI: 10.1021/acs.nanolett.5b05263
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Nano Letters Letter

Figure 5. Rotationally aligned double bilayer graphene heterostructure with interlayer hBN. (a) Optical micrograph of a bilayer graphene ake
sectioned using AFM tip as indicated. (b) Optical micrograph of the rotationally aligned double bilayer graphene separated by interlayer hBN after
the pick-up and transfer sequence. The dashed lines mark the contours of the two layers. (c) Optical micrograph of the device after metal contact
deposition. (d) Device schematic and biasing scheme. (e, f) IIL versus VIL at dierent VBG for rotationally aligned double bilayer graphene with (e)
two and (f) four layer-thick interlayer hBN dielectric; the right y-axes show the tunneling current normalized to the active area (JIL). Panels e and f
data show distinct tunneling resonance with negative dierential resistance. Panel f inset: band diagrams corresponding to the primary and secondary
tunneling resonances. (g) Primary and secondary tunneling resonances as a function of VIL and VBG for a two layer (2L), four layer (4L), and ve
layer-thick (5L) interlayer hBN dielectric. The symbols (lines) are experimental (calculated) values.

does not exhibit a bandgap opening as a function of transverse
electric eld,25 and the resistivity at charge neutrality decreases
as a function of an applied transverse electric eld.26 We note
here that while the layers are rotationally aligned during
transfer, their translation respect to each other is controlled to
within 1 m accuracy, a value much larger than interatomic
spacing. Therefore, a natural question here is why the bilayers
obtained by successive, rotationally aligned transfers are Bernal
(AB) stacked, as opposed to, for example, AA stacking. We
surmise that if the layers are rotationally aligned they will stack
vertically in the most energetically favorable, Bernal stacking27
conguration, as opposed to AA stacking.
To further illustrate the potential of the experimental
technique described in Figure 2 to realize functional vdW
heterostructures, we apply it to a double graphene bilayer
resonant tunneling eld-eect transistor, an electronic device in
which the rotational alignment of the crystal axes is essential for
the device functionality. Such devices exhibit a gate-tunable
negative dierential resistance in their interlayer tunneling
characteristics thanks to energy and momentum conservation.
However, because the energy band minima in graphene and
other two-dimensional semiconductors are located away from k
= 0, to preserve the translation invariance required for
momentum conservation in resonant tunneling, a high degree
of rotational alignment of the two layers is necessary. Indeed, a
small twist angle between the crystal axes of the two layers can
yield a large momentum separation of the band minima at the
corners of the Brillion zones and consequently suppress
resonant tunneling between the two layers.13,28 In the
following, we demonstrate a resonant tunneling device using
rotationally aligned double bilayer graphene separated by hBN
fabricated using the technique of Figure 2.
1993
To realize the rotationally aligned double bilayer graphene
heterostructure using the process ow of Figure 2, we rst
section a bilayer graphene ake using either an AFM tip (Figure
5a) or by EBL followed by O2 plasma etching. After sectioning
the bilayer, we pick up one section of the bilayer graphene,
followed by a thin hBN ake, and the other section of the
bilayer successively. Because the two graphene bilayers are
obtained from the same single crystal, their crystallographic
directions remain rotationally aligned as long as the handle
substrate is only translated during the pick-up sequence. The
entire stack in then transferred onto an hBN ake on a SiO2/Si
substrate (Figure 5b). Finally, a sequence of EBL, CHF3+O2
plasma etching, e-beam evaporation of metal, and lift-o is used
to complete the device fabrication (more details are available in
the Supporting Information Figures S3b and S4). An optical
micrograph of the rotationally aligned double bilayer graphene
heterostructure is shown in Figure 5, panel c. Figure 5, panel d
shows the schematic of device conguration including bias
condition.
Figures 5, panels e and f show the interlayer current (IIL)
versus voltage (VIL) tunneling characteristics for two double
bilayer graphene heterostructures with two (Figure 5e) and
four (Figure 5f) layer-thick interlayer hBN dielectric,
respectively, measured at various VBG values and at a
temperature T = 300 K. We determine the interlayer hBN
thickness using a combination of AFM, interlayer capacitance
data, and a comparison of the interlayer resistance (RC) near
zero bias normalized by area, with previously reported RC as a
function of number of hBN layers.13,29 The interlayer bias is
applied to the top bilayer graphene, while the bottom bilayer
graphene is grounded. We note the IIL versus VIL traces show
two sets of resonance with negative dierential resistance at |
DOI: 10.1021/acs.nanolett.5b05263
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Nano Letters
VIL| 0.10.2 V and |VIL| 0.70.9 V, with a position that
shifts as a function of the applied VBG. These resonances stem
from momentum-conserving tunneling between the two bilayer
graphene akes and are explained by examining the bilayer
graphene band structure, which possesses two conduction
(valence) bands: a lower energy band with a minimum
(maximum) at the CNP, and an upper band located at 0.4
eV from the CNP.30 The primary resonances at |VIL| 0.10.2
V are associated with tunneling between the lower energy
bands of bilayer graphene,13 while the secondary resonances at |
VIL| 0.70.9 V are associated with tunneling between the
lower energy band of one bilayer and the upper energy band of
the opposite bilayer graphene.
A comparison of Figure 5, panels e and f data reveals an
interesting and counterintuitive dependence of the tunneling
resonance on interlayer dielectric thickness, where the
secondary resonances occur at a larger VIL in the device with
a thinner interlayer dielectric. Moreover, the primary
resonances are broader in the device with thinner interlayer
dielectric. These observations can be explained by considering
the interplay between the larger interlayer capacitance at
reduced dielectric thickness and the nite quantum capacitance
of bilayer graphene. Indeed, the secondary resonances occur
when the lower energy band in one bilayer is energetically
aligned with the upper energy band of the opposite bilayer, and
therefore the electrostatic potential drop across the interlayer
dielectric (VES) is equal to the separation between the lower
and upper subbands (0.4 eV). Reducing the interlayer dielectric
thickness at a xed VES leads to an increase in the charge
density in the two layers accompanied by a corresponding
increase of the layer chemical potential. Because the applied VIL
is the sum of the electrostatic potential drop and the layer
chemical potentials, a thinner dielectric requires a larger VIL to
observe the secondary resonances.
To quantify the above argument, we write VES = VIL (B
T)/e,13,28 where T and B are the top and bottom layer
chemical potentials, respectively, measured with respect to their
CNP. The primary and secondary tunneling resonances occur
when VES = 0 V and VES = 0.4 V, respectively. By using a
band structure model for double layers, and experimentally
measured chemical potential layer density dependence13,28 in
Figure 5, panel g, we show the calculated (lines) and
experimental (symbols) VIL values for the primary and
secondary resonances as a function of VBG for dierent
interlayer dielectric thicknesses. A back-gate capacitance of
10.5 nF/cm2 and interlayer dielectric capacitance values of 3.10
F/cm2, 1.80 F/cm2, and 1.55 F/cm2 from the device with
two, four, and ve layer-thick interlayer hBN were used in the
calculations.
In summary, we describe a novel technique to realize
rotationally aligned vdW heterostructures and illustrate it by
creating a Bernal stacked bilayer graphene by successive
transfers of two monolayers, and we also demonstrate gate
tunable resonant tunneling eld-eect transistors in double
bilayer graphene. The technique has the potential to be scaled
up using large area graphene single crystals,31 or TMDs, and
can enable various functional vdW heterostructures.
ASSOCIATED CONTENT
*
S Supporting Information
The Supporting Information is available free of charge on the
ACS Publications website at DOI: 10.1021/acs.nano-
lett.5b05263.
1994
Letter
Details of device fabrication methods (PDF)
AUTHOR INFORMATION
Corresponding Author
*E-mail: etutuc@mer.utexas.edu.
Present Address
(M.Y.) Department of Physics, Columbia University, New
York, NY 10027
Author Contributions
The manuscript was written through contributions of all
authors. All authors have given approval to the nal version of
the manuscript.
Funding
The work at The University of Texas was supported by the
NRI-SWAN center, and Intel Corp. M.Y., S.H., and B.J.L. were
supported by NSF CAREER Award No. DMR-0953784.
Notes
The authors declare no competing nancial interest.
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NOTE ADDED AFTER ASAP PUBLICATION

This paper was published on the Web on February 15, 2016,
with the second authors last name misspelled. The corrected
version was reposted on February 16, 2016.

1995 DOI: 10.1021/acs.nanolett.5b05263

Nano Lett. 2016, 16, 19891995