BC846ALT1G Series

General Purpose
Transistors
NPN Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating Human Body Model: >4000 V www.onsemi.com
ESD Rating Machine Model: >400 V
S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR
Unique Site and Control Change Requirements; AECQ101 3
Qualified and PPAP Capable 1
These Devices are PbFree, Halogen Free/BFR Free and are RoHS BASE
Compliant 2
MAXIMUM RATINGS EMITTER

Rating Symbol Value Unit

Collector-Emitter Voltage VCEO Vdc 3
BC846 65
BC847, BC850 45 1
BC848, BC849 30
2
CollectorBase Voltage VCBO Vdc
SOT23
BC846 80
CASE 318
BC847, BC850 50
STYLE 6
BC848, BC849 30
EmitterBase Voltage VEBO Vdc
BC846 6.0 MARKING DIAGRAM
BC847, BC850 6.0
BC848, BC849 5.0
Collector Current Continuous IC 100 mAdc XX M G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be 1
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS XX = Device Code
M = Date Code*
Characteristic Symbol Max Unit G = PbFree Package
Total Device Dissipation FR 5 Board, PD 225 mW (Note: Microdot may be in either location)
(Note 1) *Date Code orientation and/or overbar may
TA = 25C vary depending upon manufacturing location.
Derate above 25C 1.8 mW/C
Thermal Resistance, RqJA 556 C/W
JunctiontoAmbient (Note 1) ORDERING INFORMATION
See detailed ordering and shipping information in the package
Total Device Dissipation PD 300 mW
dimensions section on page 12 of this data sheet.
Alumina Substrate (Note 2)
TA = 25C
Derate above 25C 2.4 mW/C
Thermal Resistance, RqJA 417 C/W
JunctiontoAmbient (Note 2)
Junction and Storage TJ, Tstg 55 to C
Temperature Range +150
1. FR 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.

Semiconductor Components Industries, LLC, 2015 1 Publication Order Number:

March, 2015 Rev. 14 BC846ALT1/D
 BC846ALT1G Series

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage BC846A, B V(BR)CEO 65 V
(IC = 10 mA) BC847A, B, C, BC850B, C 45
BC848A, B, C, BC849B, C 30
Collector Emitter Breakdown Voltage BC846A, B V(BR)CES 80 V
(IC = 10 mA, VEB = 0) BC847A, B, C BC850B, C 50
BC848A, B, C, BC849B, C 30
Collector Base Breakdown Voltage BC846A, B V(BR)CBO 80 V
(IC = 10 mA) BC847A, B, C, BC850B, C 50
BC848A, B, C, BC849B, C 30
Emitter Base Breakdown Voltage BC846A, B V(BR)EBO 6.0 V
(IE = 1.0 mA) BC847A, B, C, BC850B, C 6.0
BC848A, B, C, BC849B, C 5.0
Collector Cutoff Current (VCB = 30 V) ICBO 15 nA
(VCB = 30 V, TA = 150C) 5.0 mA
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A hFE 90
(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B 150
BC847C, BC848C 270

(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A 110 180 220
BC846B, BC847B, BC848B, 200 290 450
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C 420 520 800
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) 0.25 V
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) 0.6
Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) 0.7 V
Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) 0.9
Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV
Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V) 770
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product fT 100 MHz
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 4.5 pF
Noise Figure (IC = 0.2 mA, NF dB
VCE = 5.0 Vdc, RS = 2.0 kW, BC846A,B, BC847A,B,C, BC848A,B,C 10
f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C 4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 BC846ALT1G Series

BC846A, BC847A, BC848A, SBC846A

300 300
VCE = 1 V 150C VCE = 5 V
150C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

200 200
25C 25C

100 55C 100 55C

0 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector Figure 2. DC Current Gain vs. Collector
Current Current

0.18
IC/IB = 20
VCE(sat), COLLECTOREMITTER

0.16 150C
SATURATION VOLTAGE (V)

0.14
0.12 25C
0.10
0.08
0.06 55C
0.04
0.02
0
0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0 1.2
VBE(on), BASEEMITTER VOLTAGE (V)

IC/IB = 20 55C 1.1 VCE = 5 V

0.9
SATURATION VOLTAGE (V)

1.0
VBE(sat), BASEEMITTER

0.8 25C
0.9 55C
0.7 0.8
25C
0.6 150C 0.7
0.6
0.5 150C
0.5
0.4
0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs. Figure 5. Base Emitter Voltage vs. Collector
Collector Current Current

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 BC846ALT1G Series

BC846A, BC847A, BC848A, SBC846A

2.0 1.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)

TA = 25C -55C to +125C
1.2
1.6
IC = 200 mA
1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4

0.4
2.8

0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 6. Collector Saturation Region Figure 7. BaseEmitter Temperature Coefficient

T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

10 400
300
7.0 TA = 25C
200
C, CAPACITANCE (pF)

5.0 Cib

VCE = 10 V
100
3.0 TA = 25C
80
Cob
60
2.0
40
30

1.0 20
f,

0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 8. Capacitances Figure 9. CurrentGain Bandwidth Product

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 BC846ALT1G Series

BC846B, SBC846B

600 600
VCE = 1 V VCE = 5 V
150C 150C
500 500
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

400 400

25C 25C
300 300

200 55C 200 55C

100 100

0 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 10. DC Current Gain vs. Collector Figure 11. DC Current Gain vs. Collector
Current Current

0.30
IC/IB = 20 150C
VCE(sat), COLLECTOREMITTER

0.25
SATURATION VOLTAGE (V)

0.20
25C
0.15

0.10
55C
0.05

0
0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current

1.1 1.2
VBE(on), BASEEMITTER VOLTAGE (V)

1.0 IC/IB = 20 1.1 VCE = 5 V

SATURATION VOLTAGE (V)

55C
1.0
VBE(sat), BASEEMITTER

0.9
55C
25C 0.9
0.8
0.8
0.7 25C
150C 0.7
0.6
0.6 150C
0.5
0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Saturation Voltage vs. Figure 14. Base Emitter Voltage vs. Collector
Collector Current Current

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 BC846ALT1G Series

BC846B, SBC846B
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0 1.0

VB, TEMPERATURE COEFFICIENT (mV/ C)

TA = 25C
1.6 1.4
20 mA 50 mA 100 mA 200 mA
1.2 1.8
qVB for VBE
IC = -55C to 125C
0.8 2.2
10 mA

0.4 2.6

0 3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 15. Collector Saturation Region Figure 16. BaseEmitter Temperature Coefficient

40
T CURRENT-GAIN - BANDWIDTH PRODUCT
TA = 25C VCE = 5 V
500 TA = 25C
20
C, CAPACITANCE (pF)

Cib
200

10
100

6.0 50

4.0 Cob
20
f,

2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 17. Capacitance Figure 18. CurrentGain Bandwidth Product

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 BC846ALT1G Series

BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B

600 600
VCE = 1 V VCE = 5 V
150C 150C
500 500
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

400 400

25C 25C
300 300

200 55C 200 55C

100 100

0 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 19. DC Current Gain vs. Collector Figure 20. DC Current Gain vs. Collector
Current Current

0.30
IC/IB = 20
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)

0.25
150C

0.20
25C
0.15

0.10
55C
0.05

0
0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
1.1 1.2
VBE(on), BASEEMITTER VOLTAGE (V)

1.0 IC/IB = 20 1.1 VCE = 5 V

55C
SATURATION VOLTAGE (V)

1.0
VBE(sat), BASEEMITTER

0.9
25C 55C
0.9
0.8
0.8 25C
0.7
150C 0.7
0.6
0.6 150C
0.5
0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 22. Base Emitter Saturation Voltage vs. Figure 23. Base Emitter Voltage vs. Collector
Collector Current Current

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 BC846ALT1G Series

BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B

2.0 1.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)

TA = 25C -55C to +125C
1.2
1.6
IC = 200 mA
1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4

0.4
2.8

0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 24. Collector Saturation Region Figure 25. BaseEmitter Temperature

Coefficient

10 T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400

300
7.0 TA = 25C
200
C, CAPACITANCE (pF)

5.0 Cib

VCE = 10 V
100
3.0 TA = 25C
80
Cob
60
2.0
40
30

1.0 20
f,

0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 26. Capacitances Figure 27. CurrentGain Bandwidth Product

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 BC846ALT1G Series

BC847C, BC848C, BC849C, BC850C, SBC847C

1000 1000
900 VCE = 1 V 900 150C VCE = 5 V
150C
800 800
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

700 700
600 600 25C
25C
500 500
400 400
55C
300 55C 300
200 200
100 100
0 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 28. DC Current Gain vs. Collector Figure 29. DC Current Gain vs. Collector
Current Current

0.30
IC/IB = 20
VCE(sat), COLLECTOREMITTER
SATURATION VOLTAGE (V)

0.25
150C

0.20
25C
0.15

0.10
55C
0.05

0
0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
1.1 1.2
VBE(on), BASEEMITTER VOLTAGE (V)

1.0 IC/IB = 20 1.1 VCE = 5 V

55C
SATURATION VOLTAGE (V)

1.0
VBE(sat), BASEEMITTER

0.9
25C 0.9 55C
0.8
0.8
0.7 25C
150C 0.7
0.6
0.6 150C
0.5
0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 31. Base Emitter Saturation Voltage vs. Figure 32. Base Emitter Voltage vs. Collector
Collector Current Current

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 BC846ALT1G Series

BC847C, BC848C, BC849C, BC850C, SBC847C

2.0 1.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)

TA = 25C -55C to +125C
1.2
1.6
IC = 200 mA
1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4

0.4
2.8

0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 33. Collector Saturation Region Figure 34. BaseEmitter Temperature

Coefficient

10 T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400

300
7.0 TA = 25C
200
C, CAPACITANCE (pF)

5.0 Cib

VCE = 10 V
100
3.0 TA = 25C
80
Cob
60
2.0
40
30

1.0 20
f,

0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 35. Capacitances Figure 36. CurrentGain Bandwidth Product

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 BC846ALT1G Series

1 1
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

100 mS 10 mS 100 mS 10 mS
1 mS 1 mS
0.1 1S 0.1 1S

Thermal Limit Thermal Limit

0.01 0.01

0.001 0.001
1 10 100 0.1 1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 37. Safe Operating Area for Figure 38. Safe Operating Area for
BC846A, BC846B BC847A, BC847B, BC847C, BC850B, BC850C

1
IC, COLLECTOR CURRENT (A)

100 mS 10 mS

1 mS
0.1 1S

Thermal Limit
0.01

0.001
0.1 1 10 100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C

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 BC846ALT1G Series

ORDERING INFORMATION
Device Marking Package Shipping
BC846ALT1G SOT23
1A 3,000 / Tape & Reel
SBC846ALT1G* (PbFree)

BC846ALT3G SOT23
1A 10,000 / Tape & Reel
(PbFree)

BC846BLT1G SOT23
1B 3,000 / Tape & Reel
SBC846BLT1G* (PbFree)

BC846BLT3G SOT23
1B 10,000 / Tape & Reel
SBC846BLT3G* (PbFree)

BC847ALT1G SOT23
3,000 / Tape & Reel
(PbFree)
1E
BC847ALT3G SOT23
10,000 / Tape & Reel
(PbFree)

BC847BLT1G SOT23
1F 3,000 / Tape & Reel
SBC847BLT1G* (PbFree)

BC847BLT3G SOT23
1F 10,000 / Tape & Reel
NSVBC847BLT3G* (PbFree)

BC847CLT1G SOT23
1G 3,000 / Tape & Reel
SBC847CLT1G* (PbFree)

BC847CLT3G SOT23
1G 10,000 / Tape & Reel
(PbFree)

BC848ALT1G SOT23
1J 3,000 / Tape & Reel
(PbFree)

BC848BLT1G SOT23
1K 3,000 / Tape & Reel
SBC848BLT1G* (PbFree)

BC848BLT3G SOT23
1K 10,000 / Tape & Reel
(PbFree)

BC848CLT1G SOT23
3,000 / Tape & Reel
(PbFree)
1L
BC848CLT3G SOT23
10,000 / Tape & Reel
(PbFree)

BC849BLT1G SOT23
3,000 / Tape & Reel
(PbFree)
2B
BC849BLT3G SOT23
10,000 / Tape & Reel
(PbFree)

BC849CLT1G SOT23
3,000 / Tape & Reel
(PbFree)
2C
BC849CLT3G SOT23
10,000 / Tape & Reel
(PbFree)

BC850BLT1G SOT23
2F
NSVBC850BLT1G* (PbFree)
3,000 / Tape & Reel
BC850CLT1G SOT23
2G
NSVBC850CLT1G* (PbFree)

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified
and PPAP Capable.

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 BC846ALT1G Series

PACKAGE DIMENSIONS

SOT23 (TO236)
CASE 31808
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D 2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
SEE VIEW C THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
3 THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
E HE MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.89 1.00 1.11 0.035 0.040 0.044
c A1 0.01 0.06 0.10 0.001 0.002 0.004
1 2
b 0.37 0.44 0.50 0.015 0.018 0.020
b c 0.09 0.13 0.18 0.003 0.005 0.007
e 0.25 D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
q e 1.78 1.90 2.04 0.070 0.075 0.081
L 0.10 0.20 0.30 0.004 0.008 0.012
L1 0.35 0.54 0.69 0.014 0.021 0.029
A HE 2.10 2.40 2.64 0.083 0.094 0.104
q 0 10 0 10
L
STYLE 6:
A1 PIN 1. BASE
L1
2. EMITTER
VIEW C 3. COLLECTOR

SOLDERING FOOTPRINT*

0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035
SCALE 10:1 inches
mm

0.8
0.031

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
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