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AOTF4N90

900V,4A N-Channel MOSFET

General Description Product Summary

The AOTF4N90 is fabricated using an advanced high VDS 1000V@150


voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4A
levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 3.6
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this parts can be
adopted quickly into new and existing offline power supply
designs.
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOTF4N90L

Top View
TO-220F D

G
S
D S
G
AOTF4N90
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter Symbol AOTF4N90 Units
Drain-Source Voltage VDS 900 V
Gate-Source Voltage VGS 30 V
Continuous Drain TC=25C 4*
ID
Current TC=100C 2.5* A
Pulsed Drain Current C IDM 16
Avalanche Current C IAR 2.3 A
Repetitive avalanche energy C EAR 79 mJ
Single plused avalanche energy G EAS 158 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25C 37 W
PD
Power Dissipation B Derate above 25oC 0.3 W/ oC
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 C
Thermal Characteristics
Parameter Symbol AOTF4N90 Units
Maximum Junction-to-Ambient A,D RJA 65 C/W
Maximum Junction-to-Case RJC 3.3 C/W
* Drain current limited by maximum junction temperature.

Rev1: Jul 2011 www.aosmd.com Page 1 of 5


AOTF4N90

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


STATIC PARAMETERS
ID=250A, VGS=0V, TJ=25C 900
BVDSS Drain-Source Breakdown Voltage
ID=250A, VGS=0V, TJ=150C 1000 V
BVDSS Breakdown Voltage Temperature
Coefficient
ID=250A, VGS=0V 1 V/ oC
/TJ
VDS=900V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
VDS=720V, TJ=125C 10
IGSS Gate-Body leakage current VDS=0V, VGS=30V 100 n
VGS(th) Gate Threshold Voltage VDS=5V ID=250A 3.4 4.1 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A 2.8 3.6
gFS Forward Transconductance VDS=40V, ID=2A 6 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 4 A
ISM Maximum Body-Diode Pulsed Current 16 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 580 728 880 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 41 52 70 pF
Crss Reverse Transfer Capacitance 4.4 5.5 9 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 4 6
SWITCHING PARAMETERS
Qg Total Gate Charge 14.5 18.4 22 nC
Qgs Gate Source Charge VGS=10V, VDS=720V, ID=4A 3.5 4.4 5.3 nC
Qgd Gate Drain Charge 6.4 8 12 nC
tD(on) Turn-On DelayTime 22 ns
tr Turn-On Rise Time VGS=10V, VDS=450V, ID=4A, 46 ns
tD(off) Turn-Off DelayTime RG=25 43 ns
tf Turn-Off Fall Time 39 ns
trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/s,VDS=100V 155 196 235 ns
Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/s,VDS=100V 3.2 4.05 4.9 C
A. The value of R JA is measured with the device in a still air environment with T A =25C.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25C.
D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.3A, VDD=150V, RG=25, Starting TJ=25C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1: Jul 2011 www.aosmd.com Page 2 of 5


AOTF4N90

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


7 100
10V VDS=40V
6
6.5V -55C
5
10
4
ID (A)

ID(A)
6V
3
125C
1
2 VGS=5.5V
25C
1

0 0.1
0 5 10 15 20 25 30 2 4 6 8 10
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

8 3

Normalized On-Resistance
2.5
VGS=10V
6 ID=2A
2
RDS(ON) ()

4 1.5

1
2 VGS=10V
0.5

0 0
0 2 4 6 8 10 -100 -50 0 50 100 150 200
ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

1.2 1.0E+02

1.0E+01
1.1
BVDSS (Normalized)

40
1.0E+00
125C
IS (A)

1 1.0E-01

25C
1.0E-02
0.9
1.0E-03

0.8 1.0E-04
-100 -50 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0
TJ (C) VSD (Volts)
Figure 5:Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics (Note E)

Rev1: Jul 2011 www.aosmd.com Page 3 of 5


AOTF4N90

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000

VDS=720V
12 ID=4A Ciss
1000

Capacitance (pF)
VGS (Volts)

9
Coss
100
6
Crss
10
3

0 1
0 5 10 15 20 25 30 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

5 100

4 10s
Current rating ID(A)

10
RDS(ON)
limited 100s
3
ID (Amps)

1
2 1ms
DC 10ms
0.1 0.1s
1
TJ(Max)=150C
TC=25C 1s
0 0.01
0 25 50 75 100 125 150 1 10 100 1000 10000
TCASE ((C)
C) VDS (Volts)
Figure 9: Current De-rating (Note B) Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF4N90 (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJC Normalized Transient

TJ,PK=TC+PDM.ZJC.RJC
Thermal Resistance

1 RJC=3.3C/W

0.1
PD

0.01 Ton
Single Pulse T

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)


Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF4N90 (Note F)

Rev1: Jul 2011 www.aosmd.com Page 4 of 5


AOTF4N90

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms


L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt


DUT
Vgs

Vds - L Isd IF trr


Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

Rev1: Jul 2011 www.aosmd.com Page 5 of 5