Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Request Quote
Sponsored by NT-MDTSep 13 2010
Topics Covered
Introduction
Principles and Instrumental Aspects of Piezoresponse Force Microscopy
(PFM)
Basic Principles of PFM
History of PFM
Elementary theory of PFM
Contrast Mechanism in Piezoresponse Force Microscopy
Artifacts in PFM Acquisition
Polarization Patterning and Self-Assembly via PFM
Piezoresponse and Pseudoferroelectricity in ZnO
Electromechanics of Biological Systems
Nanoscale Studies of Multiferroic Materials
Conclusions
Introduction
Ferroelectrics are a subclass of piezoelectrics, namely, materials that
experience mechanical deformation under applied voltage or charging under
mechanical force. Ferroelectrics exhibit a wide range of functional properties,
including high and switchable electric polarization, strong piezoelectricity, high
non-linear optical activity, outstanding pyroelectricity, and notable non-linear
dielectric behavior. These properties are indispensable for the applications in
numerous electronic devices such as sensors, actuators, IR detectors,
microwave filters and, recently, non-volatile memories, to name a few. Due to
this unique combination of properties researchers and engineers have been
focusing on visualization of ferroelectric domains (areas with unique
polarization direction) at different scales.
Following the miniaturization challenge, novel techniques are required for the
evaluation of ferroelectric and piezoelectric properties with the high, ultimately
nanoscale resolution. Many fundamental issues have nowadays to be
addressed such as effect of the geometry confinement on ferroelectric and
piezoelectric properties, relationship between local piezoresponse and
macroscopic properties, as well as microscopic mechanisms of polarization
switching, domain stability and degradation, including polarization phenomena
at the interface.
Beyond the novel nanoscale applications, functionality of ferroelectric films,
polycrystalline ceramics, and even single crystals is often dominated by
defects that act as nucleation and pinning centers for moving domain walls
and thus determine the piezoresponse. In addition, the unique
electromechanical properties of relaxor ferroelectrics (materials with giant
strain and dielectric constant) originate from the interplay of polarization with
chemical and charge disorder on the nanometer scale. Finally, there is a novel
class of multiferroics where polarization is coupled to the magnetization at the
local scale.
Common AFM provides an ideal platform for local piezoeffect study due to
high vertical resolution and high localization of electric field at the junction
between the metalized tip and the surface. Hence, PFM is a contact-
mode AFM in which an electrically biased conductive AFM tip is used as a
probe of local electromechanical coupling via the converse piezoelectric
effect. Remarkably, the basic image formation mechanism in PFM is
complementary to force-based AFM methods (force is applied and the tip
deflection is measured) and scanning tunneling microscopy (STM) (bias is
applied and a current is measured).
History of PFM
Following the invention of STM and AFM, the first examples of measuring a
bias-induced deformation due to piezoelectricity with a scanning probe were in
1991 where piezoresponse was studied using scanning acoustic microscopy
and STM . Later on, the first papers on piezoelectric measurements and
ferroelectric domain visualization by AFMhave appeared. Following this a
series of pioneer results have been obtained by Takata et al (using strain
imaging via tunneling acoustic microscopy), Franke et al , Kolosov et al and
Gruverman et al. The work by Gruverman with coauthors is particularly
important because it demonstrated imaging and switching in common
ferroelectrics and coining the terms 'Piezoresponse' and 'PFM' which have
now become standard. In the past 15 years,PFM has become the premier tool
for studying static and dynamic properties of ferroelectric materials, as
evidenced by a number of recent books and reviews.
Here VDC is the dc bias (switching bias), VAC is the ac bias (probing bias) and
is the AC bias frequency (driving frequency). As the sample expands and
contracts due to the converse piezoelectric effect, the tip deflection is
monitored using a lock-in amplifier so that the tip oscillation
A = A0 + A1 cos(t + )
where A0 is the static surface displacement and is the phase shift between
the driving voltage VAC and the voltage induced deformation A1 = d33eff V +
AC
(C/z) (VDC - V5)VAC. The first term is the true piezoresponse due local
piezoelectric deformation described by the effective piezocoefficient d33eff and
the second term is a local electrostatic deformation caused by both local and
non-local Maxwell stress.20 Vs stands for the surface potential and C is the
total capaciatance of the cantilever-sample system.
The PFM amplitude provides information on the magnitude of the local
electromechanical coupling, while the PFM phase image gives local
polarization orientation. Typically the imaging resolution of PFM is less than ~
10-30 nm as determined from half of the width of a domain wall in the
mixed PFM signal, PR = A1 cos () that is mostly used for the characterization
( is ether close to 0 or to 180). The resolution is limited by the tip-sample
contact area (nominally determined by the radius of the tip apex), though
additional mechanisms for broadening such as electrostatic interactions and
the formation of a liquid neck in the tip-surface junction are possible.
If the polarization and applied electric field are parallel (Fig. 2a), the
deformation is positive (expansion) and piezoresponse signal is in phase
with VAC. On the contrary, if the applied electric field is antiparallel to the
spontaneous polarization, this will cause piezoelectric to contract with the
consequent lowering of the cantilever (Fig. 2b). The electric field and the
piezoresponse signal are shifted in phase by 180. Similarly, the direction of
the polarization for the in-plane polarized ferroelectric grain can be deduced
via a relevant (shear) piezoelectric coefficient d15eff (Fig. 2c,d). In this case, the
applied electric field causes a shear deformation of the grain, which is
transferred via the friction forces to the torsional movement of the cantilever.
These measurements will be further denoted as in-plane (or lateral PFM, or
LPFM) measurements.
Due to the cantilever asymmetry, polarization in the direction of cantilever axis
can only be recorded by physically rotating the sample by 90 along the z-axis
and repeating the in-plane measurement. By acquiring all three components
of the piezoresponse signal, it is possible to perform at least semiquantitative
reconstruction of polarization orientation. However, precise orientation of
polarization can be calculated only if all the components of the piezoelectric
tensor are known. The first attempt to relate the amplitude of the
piezoresponse signal to the orientation of the ferroelectric polarization has
been undertaken by Harnagea and Pignolet and detailed formalism has been
later developed by Kalinin et al. A careful analysis of the movement of the
cantilever must be done with respect to its orientation relative to the
crystallographic axes of the sample, allowing a clear attribution of the
observed domain contrast to the driving forces. In the case of composite
materials as ferroelectric polymer blended with particles or ferroelectric hybrid
(organic-inorganic) materials this problem is approached by knowing the
electromechanical behavior of each component.
Figure 2. Piezoelectric effect in a tetragonal ferroelectric investigated by PFM.
(a) Electric field aligned parallel to the spontaneous polarization leads to a
lifting of the cantilever due to the d33 effect (out-of-plane signal). (b) The
antiparallel alignment of the electric field and the spontaneous polarization
leads to a vertical contraction and a horizontal expansion of the ferroelectric.
(c), (d) Electric field applied orthogonal to the polarization results in a shear
movement due to the d15 coefficient. This movement causes a torsional
deformation of the cantilever forcing the laser spot to move horizontally (in-
plane signal).
Figure 3. Topogaphy (a), out-of-plane PFM (b) and in-plane PFM (c) signals
without (right image) and with (left image) cross-talk compensator in FF
peptide nanotubes where only in-plane signal should be observed (Images
courtesy of I. Bdikin and A. Kholkin, University of Aveiro, Portugal).
Conclusions
While the initial application of PFM was mainly to image ferroelectric domains
significant in a few important but quite rare ferroelectric materials,
the PFM can be currently applied to a large variety of materials including
biomaterials and ionic conductors. Coupled electromechanical properties are
inherent in hundreds of inorganic materials (even centrosymmetric at a
macroscopic scale) and similarly in biological materials. The evolution
of PFM provides a new window into the behavior of a wide range of materials.
Equally important, the developments in PFM are part of a larger trend toward
extreme high spatial resolution in quantification of electromagnetic properties.
Several classes of functional properties are now probed at sub-nm resolution.
In most cases the properties are represented by single scalar numbers like
resistivity, conductivity, surface potential, charge density, etc. PFM is unique in
that it carries this strategy into the realm of complex tensor properties.
Significant advances of PFM (possible but unknown yet) are expected in the
realm of new materials and devices based on them.