IRFP460C

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
power factor corrections.

20A, 500V, RDS(on) = 0.24 @VGS = 10 V

Low gate charge ( typical 130nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

D
!

G!

TO-3P

Absolute Maximum Ratings

Symbol
VDSS
ID

IRFP Series

G DS

TC = 25C unless otherwise noted

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
- Continuous (TC = 100C)

IDM

Drain Current

- Pulsed

IRFP460C
500

Units
V

20

12.5

(Note 1)

80

30

1050

mJ

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note 2)

IAR

Avalanche Current

(Note 1)

20

EAR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)

(Note 1)

23.5
4.5
235
1.88
-55 to +150

mJ
V/ns
W
W/C
C

300

dv/dt
PD
TJ, TSTG
TL

(Note 3)

- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case

Typ
--

RCS

Thermal Resistance, Case-to-Sink

RJA

Thermal Resistance, Junction-to-Ambient

2002 Fairchild Semiconductor Corporation

Max
0.53

Units
C/W

0.24

--

C/W

--

40

C/W

Rev. A, February 2002

IRFP460C

February 2002

Symbol

TC = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

500

--

--

--

0.55

--

V/C

VDS = 500 V, VGS = 0 V

--

--

10

VDS = 400 V, TC = 125C

--

--

100

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
/
TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 A, Referenced to 25C

IDSS
IGSSF
IGSSR

Zero Gate Voltage Drain Current

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

2.0

--

4.0

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 10.0 A

--

0.2

0.24

gFS

Forward Transconductance

VDS = 50 V, ID = 10.0 A

--

18

--

--

4590

6000

pF

--

380

460

pF

--

60

80

pF

--

50

120

ns

--

150

310

ns

--

380

770

ns

--

180

370

ns

--

130

170

nC

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 250 V, ID = 20 A,
RG = 25
(Note 4, 5)

VDS = 400 V, ID = 20 A,
VGS = 10 V

(Note 4, 5)

--

20

--

nC

--

45

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

20

ISM

--

--

80

VSD

Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 20 A
Drain-Source Diode Forward Voltage

--

--

1.4

trr

Reverse Recovery Time

--

480

--

ns

Qrr

Reverse Recovery Charge

--

7.7

--

VGS = 0 V, IS = 20 A,
dIF / dt = 100 A/s

(Note 4)

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.1mH, IAS = 20A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 20A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2002 Fairchild Semiconductor Corporation

Rev. A, February 2002

IRFP460C

Electrical Characteristics

IRFP460C

Typical Characteristics

10

VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V

ID, Drain Current [A]

ID, Drain Current [A]

Top :

10

150 C

25 C
0

10

-55 C

Notes :
1. 250 s Pulse Test
2. TC = 25

Notes :
1. VDS = 50V
2. 250 s Pulse Test

-1

10

-1

-1

10

10

10

10

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.0

VGS = 10V

IDR, Reverse Drain Current [A]

RDS(ON) [ ],
Drain-Source On-Resistance

0.8

0.6

0.4

VGS = 20V
0.2

10

10

25

150

Notes :
1. VGS = 0V
2. 250 s Pulse Test

Note : TJ = 25
-1

0.0
0

10

20

30

40

50

60

70

80

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature

10000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

12

VDS = 100V

Ciss

6000

4000

Coss
2000

Crss

Notes :
1. VGS = 0 V
2. f = 1 MHz

VGS, Gate-Source Voltage [V]

10

8000

Capacitance [pF]

90

VDS = 250V
8

VDS = 400V

2
Note : ID = 20.0 A

0
-1

10

10

10

30

60

90

120

150

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Dimensions in Millimeters

2002 Fairchild Semiconductor Corporation

Rev. A, February 2002

IRFP460C

Typical Characteristics

(Continued)

3.0

1.2

RDS(ON) , (Normalized)
Drain-Source On-Resistance

BV DSS , (Normalized)
Drain-Source Breakdown Voltage

2.5

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

2.0

1.5

1.0

Notes :
1. VGS = 10 V
2. ID = 20.0 A

0.5

150

0.0
-100

200

-50

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 8. On-Resistance Variation

vs Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

25
Operation in This Area
is Limited by R DS(on)

10

10 s

20

ID, Drain Current [A]

ID, Drain Current [A]

100 s
1 ms

15

10

10 ms
DC

10

Notes :

10

1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

0
25

-1

10

10

10

10

50

75

(t), T h e rm a l R e s p o n s e

150

D = 0 .5

10

0 .2

-1

N o te s :
1 . Z J C (t) = 0 .5 3 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

0 .1
0 .0 5

PDM

0 .0 2
0 .0 1
10

t1

-2

t2

JC

125

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 9. Maximum Safe Operating Area

10

100

TC, Case Temperature []

VDS, Drain-Source Voltage [V]

s i n g l e p u ls e

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. A, February 2002

IRFP460C

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD

VGS
RG

VGS

DUT

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD
DUT

10V
tp

ID (t)
VDS (t)

VDD
tp

Time

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. A, February 2002

IRFP460C

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

2002 Fairchild Semiconductor Corporation

Rev. A, February 2002

IRFP460C

Package Dimensions

TO-3P
15.60 0.20

3.00 0.20

3.80 0.20

+0.15

1.00 0.20

18.70 0.20

23.40 0.20

19.90 0.20

1.50 0.05

16.50 0.30

2.00 0.20

9.60 0.20

4.80 0.20

3.50 0.20

13.90 0.20

3.20 0.10

12.76 0.20

13.60 0.20

1.40 0.20

+0.15

5.45TYP
[5.45 0.30]

5.45TYP
[5.45 0.30]

0.60 0.05

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. A, February 2002

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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CORPORATION.
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2002 Fairchild Semiconductor Corporation

Rev. H4