Apm 4315

APM4315K
P-Channel Enhancement Mode MOSFET
Pin Description
Features
-30V/-11A,
RDS(ON)= 11m (typ.) @ VGS=-10V

RDS(ON)= 20m (typ.) @ VGS=-4.5V
S
S
Super High Dense Cell Design
S
G
Reliable and Rugged
Top View of SOP8
Lead Free and Green Devices Available

(RoHS Compliant)
( 1, 2, 3 )
S S S
Applications
(4)
G
Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems
D D DD
(5,6,7,8)
P-Channel MOSFET
Ordering and Marking Information

Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM4315
Assembly Material
Handling Code
Temperature Range
Package Code
APM4315 K :
APM4315
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2009
www.anpec.com.tw
APM4315K
Absolute Maximum Ratings
Symbol
(TA = 25C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
25
IDa
Continuous Drain Current
Pulsed Drain Current
IDM
IS
IAR
EAR
TJ
TA=70C
-9
VGS=-10V
-40
-2.7
Avalanche Current
-26
Repetitive Avalanche Energy (L=0.3mH)
101
Maximum Junction Temperature
150
Storage Temperature Range
PDa
Maximum Power Dissipation
RJL
-11
Diode Continuous Forward Current
TSTG
RJAa,c
TA=25C
Unit
V
mJ
C
-55 to 150
TA=25C
2.5
TA=70C
1.6
Thermal Resistance-Junction to Ambient
t 10s
50
Thermal Resistance-Junction to Lead
Steady State
25
W
C/W
Note a : Surface Mounted on 1in pad area, t 10sec.

o
o
Note b : UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C).
Note c : Maximum under Steady State conditions is 75 C/W.
2
Electrical Characteristics
Symbol
Parameter

Test Conditions
APM4315K
Min.
Typ.
Max.
-30
-1
-30
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VGS=0V, IDS=-250A
VDS=-24V, VGS=0V
TJ=85C
V
A
Gate Threshold Voltage
VDS=VGS, IDS=-250A
-1
-2
-2.5
Gate Leakage Current
VGS=25V, VDS=0V
100
nA
VGS=-10V, IDS=-11A
11
14
VGS=-4.5V, IDS=-10A
20
30
ISD=-2.7A, VGS=0V
-0.75
-1.1
20
ns
11
nC
Drain-Source On-state Resistance
Diode Characteristics
VSD
trr
Qrr
Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

Rev. A.2 - May., 2009
ISD=-11A,dlSD/dt=100A/s
www.anpec.com.tw
APM4315K
Electrical Characteristics (Cont.)
Symbol
Parameter
Dynamic Characteristics
Test Conditions
APM4315K
Min.
Typ.
Max.
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
2070
Coss
Output Capacitance
320
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
250
td(ON)
Turn-on Delay Time
13
24
13
24
59
107
29
53
35
50
4.7
9.3
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VDD=-15V, RL=15,
IDS=-1A, VGEN=-10V,
RG=6
Turn-off Fall Time
Gate Charge Characteristics

Qg
Unit
pF
ns
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-15V, VGS=-10V,
IDS=-11A
nC
Note d : Pulse test ; pulse width300s, duty cycle2%.

Note e : Guaranteed by design, not subject to production testing.

Rev. A.2 - May., 2009
www.anpec.com.tw
APM4315K
Typical Operating Characteristics
Power Dissipation
Drain Current
12
2.5
10
-ID - Drain Current (A)
3.0
Ptot - Power (W)
2.0
1.5
1.0
0.5
TA=25 C,VG=-10V
0.0
TA=25 C
0
20
40
60
80 100 120 140 160
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance

Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
40
Tj - Junction Temperature (C)
300s
1ms
10ms
100ms
1s
0.1
DC
TA=25 C
0.01
0.01
20
100
10
0.1
10
100
-VDS - Drain - Source Voltage (V)

Rev. A.2 - May., 2009
2
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
Mounted on 1in pad

o
RJA : 50 C/W
1E-3
0.01
0.1
10 30
Square Wave Pulse Duration (sec)
www.anpec.com.tw
APM4315K
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
40
40
VGS= -4.5,-5,-6,-7,-8,-9,-10V
35
-4V
30
RDS(ON) - On - Resistance (m)
35
25
20
15
-3.5V
10
5
-3V
0
0.0
30
20
15
1.0
1.5
2.0
2.5
VGS=-10V
10
5
0
0.5
VGS=-4.5V
25
3.0
10
25
1.6
35
40
IDS =-250A
ID=-11A
45
30
Gate Threshold Voltage
50
1.4
40
Normalized Threshold Voltage
RDS(ON) - On - Resistance (m)
20
Gate-Source On Resistance
35
30
25
20
15
10
5
0
15
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
25
50
75
100 125 150
-VGS - Gate - Source Voltage (V)

Rev. A.2 - May., 2009
1.2
www.anpec.com.tw
APM4315K
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward

40
2.00
VGS = -10V
IDS = -11A
10
1.50
-IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
Tj=150 C
Tj=25 C
1
0.25
o
0.00
-50 -25
RON@Tj=25 C: 11m
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
-VSD - Source - Drain Voltage (V)
Capacitance
3000
Gate Charge
10
Frequency=1MHz
2700
-VGS - Gate - source Voltage (V)
C - Capacitance (pF)
2400
2100
Ciss
1800
1500
1200
900
600
Coss
300
0
ID= -11A
8
7
6
5
4
3
2
1
Crss
0
VDS= -15V
10
15
20
25
0
0
30
10
15
20
25
30
35
QG - Gate Charge (nC)

Rev. A.2 - May., 2009
www.anpec.com.tw
APM4315K
Package Information
SOP-8
D
E1
SEE VIEW A
h X 45
0.25
GAUGE PLANE
SEATING PLANE
A1
A2
L
VIEW A
S
Y
M
B
O
L
SOP-8
MILLIMETERS
MIN.
INCHES
MAX.
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
0.31
0.51
0.012
0.020
0.17
0.25
0.007
0.010
4.80
5.00
0.189
0.197
5.80
6.20
0.228
0.244
E1
3.80
4.00
0.150
0.157
0.049
1.27 BSC
0.050 BSC
0.25
0.50
0.010
0.020
0.40
1.27
0.016
0.050
Note: 1. Follow JEDEC MS-012 AA.

2. Dimension D does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension E does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Rev. A.2 - May., 2009
www.anpec.com.tw
APM4315K
Carrier Tape & Reel Dimensions
P0
P2
P1
B0
E1
OD0
K0
A0
OD1 B
SECTION A-A
SECTION B-B
H
A
T1
Application
A
330.0
2.00
P0
SOP-8
4.00.10
T1
C
d
D
W
E1
F
12.4+2.00 13.0+0.50
0.05
50 MIN.
1.5 MIN. 20.2 MIN. 12.00.30 1.750.10 5.5
-0.00
-0.20
P1
P2
D0
D1
T
A0
B0
K0
1.5+0.10
0.6+0.00
8.00.10 2.00.05
6.400.20 5.200.20 2.100.20
1.5 MIN.
-0.00
-0.40
(mm)
Devices Per Unit

Package Type
Unit
Quantity
SOP-8
Tape & Reel
2500

Rev. A.2 - May., 2009
www.anpec.com.tw
APM4315K
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile

Rev. A.2 - May., 2009
www.anpec.com.tw
APM4315K
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 C
150 C
60-120 seconds
150 C
200 C
60-120 seconds
3 C/second max.
3C/second max.
183 C
60-150 seconds
217 C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5C of the specified

classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak

Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*
package
body
Temperature
Time 25C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process Classification Temperatures (Tc)

3
Package
Volume mm
Thickness
<350
<2.5 mm
235 C
2.5 mm
Volume mm
350
220 C
220 C
220 C
Table 2. Pb-free Process Classification Temperatures (Tc)

Package
Thickness
<1.6 mm
1.6 mm 2.5 mm
2.5 mm
Volume mm
<350
260 C
260 C
250 C
Volume mm
350-2000
260 C
250 C
245 C
Volume mm
>2000
260 C
245 C
245 C
Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104

Rev. A.2 - May., 2009
10
Description
5 Sec, 245C
1000 Hrs, Bias @ 125C
168 Hrs, 100%RH, 2atm, 121C
500 Cycles, -65C~150C
www.anpec.com.tw
APM4315K
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

Rev. A.2 - May., 2009
11
www.anpec.com.tw

Apm 4315

Caricato da

Informazioni sul documento

Titolo originale

Copyright

Formati disponibili

Condividi questo documento

Condividi o incorpora il documento

Opzioni di condivisione

Hai trovato utile questo documento?

Questo contenuto è inappropriato?

Copyright:

Formati disponibili

Apm 4315

Caricato da

Copyright:

Formati disponibili

APM4315K

P-Channel Enhancement Mode MOSFET

RDS(ON)= 11m (typ.) @ VGS=-10V

Super High Dense Cell Design

Reliable and Rugged

Top View of SOP8

Lead Free and Green Devices Available

Power Management in Notebook Computer,

Ordering and Marking Information

XXXXX - Date Code

(TA = 25C unless otherwise noted)

Continuous Drain Current

Pulsed Drain Current

Repetitive Avalanche Energy (L=0.3mH)

Maximum Junction Temperature

Storage Temperature Range

Maximum Power Dissipation

Diode Continuous Forward Current

Thermal Resistance-Junction to Ambient

Thermal Resistance-Junction to Lead

Note a : Surface Mounted on 1in pad area, t 10sec.

(TA = 25C unless otherwise noted)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state Resistance

Diode Forward Voltage

Copyright ANPEC Electronics Corp.

(TA = 25C unless otherwise noted)

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

Note d : Pulse test ; pulse width300s, duty cycle2%.

Copyright ANPEC Electronics Corp.

-ID - Drain Current (A)

Ptot - Power (W)

80 100 120 140 160

80 100 120 140 160

Safe Operation Area

Thermal Transient Impedance

-ID - Drain Current (A)

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

-VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Mounted on 1in pad

Square Wave Pulse Duration (sec)

-ID - Drain Current (A)

RDS(ON) - On - Resistance (m)

-VDS - Drain - Source Voltage (V)

Gate Threshold Voltage

Normalized Threshold Voltage

RDS(ON) - On - Resistance (m)

-ID - Drain Current (A)

100 125 150

Tj - Junction Temperature (C)

-VGS - Gate - Source Voltage (V)

Copyright ANPEC Electronics Corp.