MITSUBISHI POWER MOSFET

ARY

FY4AEJ-03

MIN
RELI

on. ange.
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is
its
is
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Notice parame
Som

HIGH-SPEED SWITCHING USE

Nch/Pch POWER MOSFET

FY4AEJ-03

OUTLINE DRAWING

6.0
4.4

Dimensions in mm

1.8 MAX.

5.0

SOURCE
GATE
DRAIN

0.4
1.27

4V DRIVE
VDSS ............................................................................... 30V
rDS (ON) (MAX) ........................................................ 30/80m
ID ......................................................................................... 4A

SOP-8

APPLICATION
Motor control, Lamp control, Solenoid control,
DC-DC converter, Li-ionbattery, notebook p/c, etc

MAXIMUM RATINGS (Tc = 25C)

Symbol

Parameter

VDSS
VGSS

Drain-source voltage
Gate-source voltage

ID
IDM

Drain current
Drain current (Pulsed)

IDA
IS

Avalanche current (Pulsed)

Source current

ISM

Source current (Pulsed)

PD
Tch

Maximum power dissipation

Channel temperature

Tstg

Storage temperature
Weight

Conditions
VGS = 0V
VDS = 0V

L = 10H

Ratings
p-ch
30

20
4

20
4

V
A

28
4

28
4

A
A

1.7
6.8

1.7
6.8

A
A

1.6

Typical value

Unit

n-ch
30

1.6

55~+150
55~+150

C
C

0.07

g
Aug. 1999

MITSUBISHI POWER MOSFET

ARY

MIN
RELI

FY4AEJ-03

.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som

HIGH-SPEED SWITCHING USE

Nch/Pch POWER MOSFET

ELECTRICAL CHARACTERISTICS (Tch = 25C)

N-ch
Symbol

Parameter

V (BR) DSS
IGSS

Drain-source breakdown voltage

Gate-source leakage current

ID = 1mA, VGS = 0V
VGS = 20V, VDS = 0V

IDSS

Drain-source leakage current

VDS = 30V, VGS = 0V

VGS (th)
rDS (ON)

Gate-source threshold voltage ID = 1mA, VDS = 10V

Drain-source on-state resistance ID = 4A, VGS = 10V

rDS (ON)
y fs

Drain-source on-state resistance ID = 2A, VGS = 4V

Forward transfer admittance
ID = 4A, VDS = 10V

Ciss
Coss

Input capacitance
Output capacitance

Crss
td (on)

Reverse transfer capacitance

Turn-on delay time

tr

Rise time

td (off)
tf

Turn-off delay time

Fall time

VSD
Rth (ch-a)

Source-drain voltage
Thermal resistance

trr

Reverse recovery time

Test conditions

Limits

Unit

Min.

Typ.

Max.

30

0.1

V
A

0.1

mA

1.0

1.5
23

2.0
30

V
m

40
8

55

m
S

550
220

pF
pF

115
12

pF
ns

20

ns

40
40

ns
ns

IS = 1.7A, VGS = 0V
Channel to ambiet

0.75

1.10
78.1

V
C/W

IS = 1.7A, dis/d t = 50A/s

100

ns

VDS = 10V, VGS = 0V, f = 1MHz

VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50

P-ch
Symbol

Parameter

Test conditions

Limits
Min.
30

Typ.

Max.

Unit

V (BR) DSS

Drain-source breakdown voltage ID = 1mA, V GS = 0V

IGSS

Gate-source leakage current

VGS = 20V, VDS = 0V

0.1

IDSS
VGS (th)

Drain-source leakage current

Gate-source threshold voltage

VDS = 30V, VGS = 0V

ID = 1mA, VDS = 10V

1.5

2.0

0.1
2.5

mA
V

rDS (ON)
rDS (ON)

Drain-source on-state resistance ID = 4A, V GS = 10V

Drain-source on-state resistance ID = 2A, V GS = 4V

60
115

80
180

m
m

y fs
Ciss

Forward transfer admittance

Input capacitance

ID = 4A, V DS = 10V

6
680

S
pF

Coss
Crss

Output capacitance
Reverse transfer capacitance

VDS = 10V, VGS = 0V, f = 1MHz

180
90

pF
pF

td (on)

Turn-on delay time

10

ns

tr
td (off)

Rise time
Turn-off delay time

15
50

ns
ns

tf
VSD

Fall time
Source-drain voltage

IS = 1.7A, VGS = 0V

30
0.88

1.20

ns
V

Rth (ch-a)
trr

Thermal resistance
Reverse recovery time

Channel to ambiet
IS = 1.7A, dis/d t = 50A/s

70

78.1

C/W
ns

VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50

Aug. 1999

MITSUBISHI POWER MOSFET

ARY

MIN
RELI

FY4AEJ-03

.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som

HIGH-SPEED SWITCHING USE

Nch/Pch POWER MOSFET

PERFORMANCE CURVES (N-ch)

1.6

1.2

0.8

0.4

MAXIMUM SAFE OPERATING AREA

5
3
2

DRAIN CURRENT ID (A)

POWER DISSIPATION PD (W)

POWER DISSIPATION DERATING CURVE

2.0

50

100

150

101

100s

7
5
3
2

1ms

100

10ms

7
5
3
2

100ms
TC = 25C
Single Pulse

101
7
5
3

200

tw = 10s

DC
2 3

5 7 100

2 3

5 7 101

2 3

CASE TEMPERATURE TC (C)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS
(TYPICAL)

OUTPUT CHARACTERISTICS
(TYPICAL)

VGS =10V,8V,6V,5V

20

VGS = 10V,8V,6V,5V

10

4V

16
Tc = 25C
Pulse Test

12

8
3V

DRAIN CURRENT ID (A)

4V

DRAIN CURRENT ID (A)

6
3V

4
PD = 1.6W

PD = 1.6W

0.2

0.4

0.6

0.8

1.0

0.2

0.3

0.4

0.5

DRAIN-SOURCE VOLTAGE VDS (V)

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE
(TYPICAL)

ON-STATE RESISTANCE VS.

DRAIN CURRENT
(TYPICAL)
100

Tc = 25C
Pulse Test

0.8

0.6

0.4
ID = 8A

0.2

4A
2A

GATE-SOURCE VOLTAGE VGS (V)

10

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (m)

DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)

0.1

DRAIN-SOURCE VOLTAGE VDS (V)

1.0

Tc = 25C
Pulse Test

80

60
VGS = 4V

40

20

10V

0
101 2 3 5 7100 2 3 5 7101 2 3 5 7102
DRAIN CURRENT ID (A)
Aug. 1999

MITSUBISHI POWER MOSFET

ARY

MIN
RELI

FY4AEJ-03

.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som

HIGH-SPEED SWITCHING USE

Nch/Pch POWER MOSFET
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)

TRANSFER CHARACTERISTICS
(TYPICAL)
102

20

16

FORWARD TRANSFER
ADMITTANCE yfs (S)

DRAIN CURRENT ID (A)

7
5

12
Tc = 25C
VDS = 10V
Pulse Test

3
2

101
7
5

VDS =10V
Pulse Test

TC = 25C,75C,125C

100 0
10

10

102

7
5

Ciss

Coss

102
Crss
Tch = 25C
VGS = 0V
f = 1MHZ

101

2 3

5 7 100

2 3

5 7 101

3
tr

101

td(on)

7
5

100
101

Tch = 25C
VGS = 10V
VDD = 15V
RGEN = RGS = 50
2

5 7 100

5 7 101

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN CURRENT ID (A)

GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)

SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)

8
VDS =

15V
20V

25V

Tch = 25C
ID =4A

12

16

GATE CHARGE Qg (nC)

20

SOURCE CURRENT IS (A)

GATE-SOURCE VOLTAGE VGS (V)

td(off)

20

5 7 102

tf

7
5

3
2

10

SWITCHING CHARACTERISTICS
(TYPICAL)

103

5 7 101

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2

DRAIN CURRENT ID (A)

7
5

GATE-SOURCE VOLTAGE VGS (V)

SWITCHING TIME (ns)

CAPACITANCE
Ciss, Coss, Crss (pF)

VGS = 0V
Pulse Test

16
TC =
125C

12

75C
25C

0.4

0.8

1.2

1.6

2.0

SOURCE-DRAIN VOLTAGE VSD (V)

Aug. 1999

MITSUBISHI POWER MOSFET

ARY

MIN
RELI

FY4AEJ-03

.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som

HIGH-SPEED SWITCHING USE

Nch/Pch POWER MOSFET

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE
(TYPICAL)

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE
(TYPICAL)

101

4.0

GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)

7
5
3
2

100
7
5

VGS = 10V
ID = 4A
Pulse Test

3
2

101

50

50

100

3.2

1.6

0.8

CHANNEL TEMPERATURE Tch (C)

BREAKDOWN VOLTAGE VS.

CHANNEL TEMPERATURE
(TYPICAL)
1.4

1.2

1.0
VGS = 0V
ID = 1mA
Pulse Test

0.8

0.6

0.4

50

50

100

150

CHANNEL TEMPERATURE Tch (C)

VDS = 10V
ID = 1mA
Pulse Test

2.4

150

50

50

100

150

CHANNEL TEMPERATURE Tch (C)

TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (C/W)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS
102
7
5

D = 1.0

3
2

0.5

101

0.2

7
5
3
2

100
7
5

0.1
0.05

PDM
0.02
0.01

tw
T

Single Pulse

D= tw
T

3
2

101 4
10 2 3 5 7103 2 3 5 7102 2 3 57101 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
PULSE WIDTH tw (s)

Aug. 1999

MITSUBISHI POWER MOSFET

ARY

MIN
RELI

FY4AEJ-03

.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som

HIGH-SPEED SWITCHING USE

Nch/Pch POWER MOSFET

PERFORMANCE CURVES (P-ch)

DRAIN CURRENT ID (A)

1.6

1.2

0.8

0.4

50

100

150

tw =

10s

101
7
5
3
2

100s

100
7
5
3
2

10ms

1ms

100ms
TC = 25C
Single Pulse

101
7
5
3

DC

2 3 5 7100 2 3 5 7101 2 3

200

CASE TEMPERATURE TC (C)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS
(TYPICAL)

OUTPUT CHARACTERISTICS
(TYPICAL)

VGS =10V 8V

20

DRAIN CURRENT ID (A)

MAXIMUM SAFE OPERATING AREA

5
3
2

6V

16

5V
Tc = 25C
Pulse Test

12

VGS = 10V,8V,6V,5V

10

PD = 1.6W

4V

DRAIN CURRENT ID (A)

POWER DISSIPATION PD (W)

POWER DISSIPATION DERATING CURVE

2.0

PD = 1.6W
4V

6
Tc = 25C
Pulse Test

3V
2

3V

0.4

0.8

1.2

1.6

2.0

0.4

0.6

0.8

1.0

DRAIN-SOURCE VOLTAGE VDS (V)

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE
(TYPICAL)

ON-STATE RESISTANCE VS.

DRAIN CURRENT
(TYPICAL)
200

Tc = 25C
Pulse Test

1.6

1.2

0.8
ID =8A

0.4
4A
2A

10

GATE-SOURCE VOLTAGE VGS (V)

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (m)

DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)

0.2

DRAIN-SOURCE VOLTAGE VDS (V)

2.0

VGS =4V

160

120

80

40

Tc = 25C
Pulse Test

10V

0
101 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
Aug. 1999

MITSUBISHI POWER MOSFET

ARY

MIN
RELI

FY4AEJ-03

.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som

HIGH-SPEED SWITCHING USE

Nch/Pch POWER MOSFET
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)

TRANSFER CHARACTERISTICS
(TYPICAL)
102

20

16

12
Tc = 25C
VDS = 10V
Pulse Test

FORWARD TRANSFER
ADMITTANCE yfs (S)

DRAIN CURRENT ID (A)

7
5
3
2

101
7
5
VDS = 10V
Pulse Test

3
2
TC = 25C 75C 125C

100 0
10

10

5 7 102

2 3

DRAIN CURRENT ID (A)

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)

SWITCHING CHARACTERISTICS
(TYPICAL)
2

Ciss

7
5
3

Coss

Crss

102
7
5

Tch = 25C
VGS = 0V
f = 1MHZ

SWITCHING TIME (ns)

102

103

CAPACITANCE
Ciss, Coss, Crss (pF)

5 7 101

GATE-SOURCE VOLTAGE VGS (V)

7
5

td(off)
tf

3
2

7
5
Tch = 25C
VGS = 10V
VDD = 15V
RGEN = RGS = 50

100
101

tr

td(on)

101

101 2 3 5 7 100 2 3 5 7101 2

2 3

5 7 100

5 7 101

2 3

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN CURRENT ID (A)

GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)

SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20

10
VDS =
10V

20V
25V

Tch = 25C
ID = 4A

12

16

20

GATE CHARGE Qg (nC)

24

SOURCE CURRENT IS (A)

GATE-SOURCE VOLTAGE VGS (V)

2 3

TC =
125C

16

75C
25C

12

8
VGS = 0V
Pulse Test

0.4

0.8

1.2

1.6

2.0

SOURCE-DRAIN VOLTAGE VSD (V)

Aug. 1999

MITSUBISHI POWER MOSFET

ARY

MIN
RELI

FY4AEJ-03

.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som

HIGH-SPEED SWITCHING USE

Nch/Pch POWER MOSFET

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE
(TYPICAL)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE
(TYPICAL)
101

4.0
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)

7
5
3
2

100
7
5

VGS = 10V
ID = 4A
Pulse Test

3
2

101

50

50

100

3.2
VDS = 10V
ID = 1mA

2.4

1.6

0.8

150

CHANNEL TEMPERATURE Tch (C)

BREAKDOWN VOLTAGE VS.

CHANNEL TEMPERATURE
(TYPICAL)
1.4

1.2

1.0
VGS = 0V
ID = 1mA

0.8

0.6

0.4

50

50

100

150

CHANNEL TEMPERATURE Tch (C)

50

50

100

150

CHANNEL TEMPERATURE Tch (C)

TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (C/W)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS
102
7
5

D = 1.0

3
2

0.5

101

0.2

7
5
3
2

100
7
5

0.1
0.05

PDM
0.02
tw

0.01

Single Pulse

D= tw
T

3
2

101 4
10 2 3 5 7103 2 3 5 7102 2 3 57101 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
PULSE WIDTH tw (s)

Aug. 1999

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