APM7313

Dual N-Channel Enhancement Mode MOSFET

Features

Pin Description

30V/6A , RDS(ON)=21m(typ.) @ VGS=10V

SO-8

RDS(ON)=27m(typ.) @ VGS=4.5V

S1

D1

G1

D1

Reliable and Rugged

S2

D2

SO-8 Package

G2

D2

Super High Dense Cell Design for Extremely

Low RDS(ON)

Top View

Applications

D1

D1

D2

D2

Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

G1

G2

S1

S2

N-Channel MOSFET N-Channel MOSFET

Ordering and Marking Information

APM 7313

P ackage C ode
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel

H a n d lin g C o d e
Tem p. R ange
P ackage C ode

APM 7313 K :

APM 7313
XXXXX

X X X X X - D a te C o d e

Absolute Maximum Ratings

Symbol

(TA = 25C unless otherwise noted)

Parameter

Rating

VDSS

Drain-Source Voltage

30

VGSS

Gate-Source Voltage

20

Unit
V

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003

www.anpec.com.tw

APM7313
Absolute Maximum Ratings (Cont.)
Symbol
ID

(TA = 25C unless otherwise noted)

Parameter

Rating

Unit

Maximum Drain Current Continuous

IDM

Maximum Drain Current Pulsed

24

PD

Maximum Power Dissipation

TA=25C

2.5

TA=100C

1.0

150

-55 to 150

50

C/W

TJ

Maximum Junction Temperature

TSTG

Storage Temperature Range

RjA

Thermal Resistance Junction to Ambient

* Surface Mounted on FR4 Board, t 10 sec.

Electrical Characteristics
Symbol

Parameter

(TA = 25C unless otherwise noted)

Test Condition

APM7313
Min.

Typ.

Max.

Unit

Static
Drain-Source Breakdown
Voltage

BVDSS

Zero Gate Voltage Drain

Current
Gate Threshold Voltage

IDSS
VGS(th)
IGSS

Gate Leakage Current

Drain-Source On-state

RDS(ON)a

Resistance
Diode Forward Voltage

VSDa

VGS=0V , IDS=250A

30

V
1

1.5

VGS=20V , VDS=0V
VGS=10V , IDS=3.5A

nA

21

100
28

VGS=4.5V , IDS=2A

27

42

ISD=2A , VGS=0V

0.7

1.3

VDS=15V , IDS= 10A

30

36

VDS=24V , VGS=0V
VDS=VGS , IDS=250A

m
V

Dynamic
Qg
Total Gate Charge
Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

td(ON)

Turn-on Delay Time

VGS=10V

Tr

Turn-on Rise Time

VDD=15V , IDS=2A ,

td(OFF)

Turn-off Delay Time

VGEN=10V , RG=6

Tf

Turn-off Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Notes
a
b

nC

5.8
3.8

VGS=0V

11

22

17

33

37

68

20

38

ns

1200

VDS=25V
Reverse Transfer Capacitance Frequency=1.0MHz

210

pF

95

: Pulse test ; pulse width 300s, duty cycle 2%

: Guaranteed by design, not subject to production testing

Copyright ANPEC Electronics Corp.

Rev. A.5 - Feb., 2003

www.anpec.com.tw

APM7313
Typical Characteristics

Output Characteristics

Transfer Characteristics
40

30

IDS-Drain Current (A)

IDS-Drain Current (A)

VGS=4,4.5,6,8,10V

25

20

15

VGS=3.5V

10

V GS=3V
5

30

20

TJ=25C

TJ=125C

10

VGS=2.5V
0
1.0

0
0

10

1.5

VDS-Drain-to-Source Voltage (V)

2.0

2.5

3.0

3.5

4.0

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

Threshold Voltage vs. Junction Temperature

1.2

0.050

IDS=250A

0.045

RDS(ON)-On-Resistance ()

VGS(th)-Threshold Voltage (V)

(Normalized)

TJ=-55C

1.0

0.8

0.6

0.040

VGS=4.5V

0.035
0.030

VGS=10V

0.025
0.020
0.015
0.010
0.005

0.4
-50

-25

25

50

75

100

125

0.000

150

Tj-Junction Temperature (C)

Copyright ANPEC Electronics Corp.

Rev. A.5 - Feb., 2003

10

15

20

25

30

IDS-Drain Current (A)

www.anpec.com.tw

APM7313
Typical Characteristics (Cont.)

On-Resistaence vs. Junction Temperature

RDS(ON)-On Resistance () (Normalized)

On-Resistance vs. Gate-to-Source Voltage

0.050

IDS=3.5A

RDS (ON) - On-Resistance ()

0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000

10

VGS=10V
IDS=3.5A
1.4

1.2

1.0

0.8

0.6
-50

-25

25

50

75

100

125

Gate Voltage (V)

Tj-Junction Temperature (C)

Gate Charge

Capacitance Characteristics

150

2000

10

V DS= 1 5 V
I DS= 1 0 A

Ciss

1000

C-Capacitance (pF)

VGS-Gate-to-Source Voltage (V)

1.6

500

Coss

Crss

100

Frequency=1MHz
0

10

15

20

25

0.1

30

10

30

VDS-Drain-to-Source Voltage (V)

QG-Total Gate Charge (nC)

Copyright ANPEC Electronics Corp.

Rev. A.5 - Feb., 2003

www.anpec.com.tw

APM7313
Typical Characteristics (Cont.)

Single Pulse Power

Source-Drain Diode Forward Voltage

80

60
10

Power (W)

ISD-Source Current (A)

100

TJ=125C

40

TJ=-55C

20
TJ=25C
0.1
0.0

0.2

0.4

0.6

0.8

1.0

1.2

0
0.01

1.4

0.1

VSD-Source to Drain Voltage

10

Time (sec)

Normalized Effective Transient

Thermal Impedance

Normalized Transient Thermal Transient Impedence, Junction to Ambient

1
Duty Cycle=0.5

D=0.2
D=0.1

0.1
D=0.05
1. Duty Cycle , D=t1/t2
2. Per Unit Base=RthJA=50C/W
3. TJM-TA=PDMZthJA
4. Surface Mounted

D=0.02
SINGLE

0.01
1E-4

1E-3

0.01

0.1

10

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp.

Rev. A.5 - Feb., 2003

www.anpec.com.tw

APM7313
Packaging Information

e1

0.015X45

SOP-8 pin ( Reference JEDEC Registration MS-012)

e2
D

A1

1
L

0.004max.
Dim

Mi ll im et er s

Inche s

Min .
1. 35

Max .
1. 75

Min.
0. 053

Max .
0. 069

A1
D
E

0. 10
4. 80
3. 80

0. 25
5. 00
4. 00

0. 004
0. 189
0. 150

0. 010
0. 197
0. 157

H
L
e1
e2

5. 80
0. 40
0. 33

6. 20
1. 27
0. 51

0. 228
0. 016
0. 013

0. 244
0. 050
0. 020

Copyright ANPEC Electronics Corp.

Rev. A.5 - Feb., 2003

1. 27B S C

0. 50B S C

www.anpec.com.tw

APM7313
Physical Specifications
Terminal Material
Lead Solderability

Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)

temperature

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

183C
Pre-heat temperature

Time

Classification Reflow Profiles

Convection or IR/
Convection
Average ramp-up rate(183C to Peak)
3C/second max.
120 seconds max
Preheat temperature 125 25C)
60 150 seconds
Temperature maintained above 183C
Time within 5C of actual peak temperature 10 20 seconds
Peak temperature range
220 +5/-0C or 235 +5/-0C
Ramp-down rate
6 C /second max.
6 minutes max.
Time 25C to peak temperature

VPR
10 C /second max.

60 seconds
215-219C or 235 +5/-0C
10 C /second max.

Package Reflow Conditions

pkg. thickness 2.5mm
and all bgas
Convection 220 +5/-0 C
VPR 215-219 C
IR/Convection 220 +5/-0 C

pkg. thickness < 2.5mm and

pkg. volume 350 mm

Copyright ANPEC Electronics Corp.

Rev. A.5 - Feb., 2003

pkg. thickness < 2.5mm and pkg.

volume < 350mm
Convection 235 +5/-0 C
VPR 235 +5/-0 C
IR/Convection 235 +5/-0 C
www.anpec.com.tw

APM7313
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up

Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78

Description
245C , 5 SEC
1000 Hrs Bias @ 125 C
168 Hrs, 100 % RH , 121C
-65C ~ 150C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms , Itr > 100mA

Carrier Tape & Reel Dimensions

t
D

Po

P1

Bo

F
W

Ao

D1

Ko
T2

J
C
A

T1

SOP-8

A
3301

Application
SOP-8

F
5.5 0.1

Application

B
62 1.5

C
12.75 +
0.1 5

J
2 + 0.5

D
D1
Po
1.550.1 1.55+ 0.25 4.0 0.1

T1
12.4 +0.2

T2
2 0.2

W
12 + 0.3
- 0.1

P1
2.0 0.1

Ao
6.4 0.1

Bo
5.2 0.1

P
8 0.1

E
1.75 0.1

Ko
t
2.1 0.1 0.30.013

(mm)

Copyright ANPEC Electronics Corp.

Rev. A.5 - Feb., 2003

www.anpec.com.tw

APM7313
Cover Tape Dimensions
Application
SOP- 8

Carrier Width
12

Cover Tape Width

9.3

Devices Per Reel

2500

Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright ANPEC Electronics Corp.

Rev. A.5 - Feb., 2003

www.anpec.com.tw

This datasheet has been downloaded from:

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