SKM100GAL12T4

Absolute Maximum Ratings

Symbol

Conditions

Values

Unit

IGBT
VCES
IC

Tj = 25 C
Tj = 175 C

1200

Tc = 25 C

160

Tc = 80 C

123

100

ICnom
ICRM

SEMITRANS 2
Fast IGBT4 Modules
SKM100GAL12T4

VGES
tpsc
Tj

ICRM = 3xICnom
VCC = 800 V
VGE 15 V
VCES 1200 V

300

-20 ... 20

10

-40 ... 175

Tc = 25 C

121

Tc = 80 C

91

100

Tj = 150 C

Inverse diode
IF

Tj = 175 C

IFnom

Features
IGBT4 = 4. generation fast trench IGBT
(Infineon)
CAL4 = Soft switching 4. generation
CAL-diode
Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
Increased power cycling capability
With integrated gate resistor
For higher switching frequenzies up to
20kHz
UL recognized, file no. E63532

Typical Applications*

Electronic welders at fsw up to 20 kHz

DC/DC converter
Brake chopper
Switched reluctance motor

Remarks
Case temperature limited
to Tc = 125C max.
Recommended Top = -40 ... +150C
Product reliability results valid
for Tj = 150C

IFRM

IFRM = 3xIFnom

300

IFSM

tp = 10 ms, sin 180, Tj = 25 C

550

-40 ... 175

Tc = 25 C

121

Tc = 80 C

91

100

Tj
Freewheeling diode
IF

Tj = 175 C

IFnom
IFRM

IFRM = 3xIFnom

300

IFSM

tp = 10 ms, sin 180, Tj = 25 C

550

-40 ... 175

Tj
Module
It(RMS)

Tterminal = 80 C

Tstg
Visol

AC sinus 50 Hz, t = 1 min

200

-40 ... 125

4000

Characteristics
Symbol
IGBT
VCE(sat)
VCE0

Conditions
IC = 100 A
VGE = 15 V
chiplevel
chiplevel

min.

typ.

max.

Unit

Tj = 25 C

1.80

2.05

Tj = 150 C

2.20

2.40

Tj = 25 C

0.8

0.9

Tj = 150 C

0.7

0.8

Tj = 25 C

10.00

11.50

15.00

16.00

5.8

6.5

mA

rCE

VGE = 15 V
chiplevel

VGE(th)

VGE=VCE, IC = 3.8 mA

ICES

VGE = 0 V
VCE = 1200 V

Cies
Coes
Cres

VCE = 25 V
VGE = 0 V

Tj = 150 C
5

Tj = 25 C
Tj = 150 C

mA

f = 1 MHz

6.15

nF

f = 1 MHz

0.40

nF

f = 1 MHz

0.345

nF

QG

VGE = - 8 V...+ 15 V

565

nC

RGint

Tj = 25 C

7.5

GAL
by SEMIKRON

Rev. 1 03.09.2013

SKM100GAL12T4
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff

SEMITRANS 2
Fast IGBT4 Modules
SKM100GAL12T4

rF

IGBT4 = 4. generation fast trench IGBT

(Infineon)
CAL4 = Soft switching 4. generation
CAL-diode
Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
Increased power cycling capability
With integrated gate resistor
For higher switching frequenzies up to
20kHz
UL recognized, file no. E63532

Typical Applications*
Electronic welders at fsw up to 20 kHz
DC/DC converter
Brake chopper
Switched reluctance motor

Remarks
Case temperature limited
to Tc = 125C max.
Recommended Top = -40 ... +150C
Product reliability results valid
for Tj = 150C

Qrr
Err
Rth(j-c)

chiplevel

IRRM
Qrr
Err
Rth(j-c)

typ.

chiplevel

max.

Unit

165

ns

Tj = 150 C

47

ns

Tj = 150 C

15

mJ

Tj = 150 C

400

ns

Tj = 150 C

75

ns

Tj = 150 C

10.2

mJ
0.27

K/W

Tj = 25 C

2.20

2.52

Tj = 150 C

2.15

2.47

Tj = 25 C

1.3

1.5

Tj = 150 C

0.9

1.1

Tj = 25 C

9.0

10.2

12.5

13.7

Tj = 150 C
IF = 100 A
Tj = 150 C
di/dtoff = 1600 A/s T = 150 C
j
VGE = 15 V
Tj = 150 C
VCC = 600 V
per diode

Freewheeling diode
VF = VEC IF = 100 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF

min.
Tj = 150 C

per IGBT

Inverse diode
VF = VEC IF = 100 A
VGE = 0 V
chiplevel
VF0
chiplevel

IRRM

Features

Rth(j-c)

Conditions

VCC = 600 V
IC = 100 A
VGE = 15 V
RG on = 1
RG off = 1
di/dton = 1800 A/s
di/dtoff = 1130 A/s

54

15.7

5.9

mJ
0.48

K/W

Tj = 25 C

2.20

2.52

Tj = 150 C

2.15

2.47

Tj = 25 C

1.3

1.5

Tj = 150 C

0.9

1.1

Tj = 25 C

9.0

10.2

12.5

13.7

Tj = 150 C
IF = 100 A
Tj = 150 C
di/dtoff = 1600 A/s T = 150 C
j
VGE = 15 V
Tj = 150 C
VCC = 600 V
per Diode

54

15.7

5.9

mJ
0.48

K/W

30

nH

Module
LCE
RCC'+EE'

terminal-chip

Rth(c-s)

per module

Ms

to heat sink M6

Mt

TC = 25 C

0.65

TC = 125 C

1
0.04

to terminals M5

m
m
0.05

K/W

Nm

2.5

Nm
Nm

160

GAL
2

Rev. 1 03.09.2013

by SEMIKRON

SKM100GAL12T4

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'

Fig. 2: Rated current vs. temperature IC = f (TC)

Fig. 3: Typ. turn-on /-off energy = f (IC)

Fig. 4: Typ. turn-on /-off energy = f (RG)

Fig. 5: Typ. transfer characteristic

Fig. 6: Typ. gate charge characteristic

by SEMIKRON

Rev. 1 03.09.2013

SKM100GAL12T4

Fig. 7: Typ. switching times vs. IC

Fig. 8: Typ. switching times vs. gate resistor RG

Fig. 9: Transient thermal impedance

Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'

Fig. 11: CAL diode peak reverse recovery current

Fig. 12: Typ. CAL diode peak reverse recovery charge

Rev. 1 03.09.2013

by SEMIKRON

SKM100GAL12T4

SEMITRANS 2

GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

by SEMIKRON

Rev. 1 03.09.2013