Simplify the Science of ALD.

Atomic Layer
Deposition
A tutorial by
Cambridge NanoTech, Inc.

Cambridge NanoTech, Inc.

ALD Systems

The Cambridge NanoTech Atomic Layer Deposition Systems are controlled

with a convenient Labview-PC-USB interface.
All ALD systems have hot walls with cross flow travelling wave precursor
deposition. N2 gas is used for high speed pulse-purge cycles.
Prior to deposition, a substrate is inserted into the ALD reactor, and is heated
usually between 50-400 C.

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ALD example cycle

for Al2O3 deposition
Reaction of
TMA with OH

Methane reaction
product (CH4)

C
H

H
H C
H

Al

C H

Tri-methyl
aluminum
Al(CH3)3(g)

Methyl group
(CH3)
H

Al

Hydroxyl (OH)
from surface
adsorbed H2O
H

O
Substrate surface (e.g. Si)

Substrate surface (e.g. Si)

In air H2O vapor is adsorbed on most surfaces,

forming a hydroxyl group. With silicon this
forms: Si-O-H (s). After placing the substrate in
the reactor, Trimethyl Aluminum (TMA) is pulsed
into the reaction chamber.

Trimethyl Aluminum (TMA) reacts with the

adsorbed hydroxyl groups, producing methane
as the reaction product.

Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl

groups, producing methane as the reaction product.
Al(CH3)3 (g) + : Si-O-H

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(s)

:Si-O-Al(CH3)2

(s)

+ CH4

ALD cycle for Al2O3

Methane reaction
product CH4
Reaction of
TMA with OH

H
H

C
Al

C
H

O
Substrate surface (e.g. Si)

Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl

groups, producing methane as the reaction product.

Al(CH3)3 (g) + : Si-O-H

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(s)

:Si-O-Al(CH3)2

(s)

+ CH4

ALD cycle for Al2O3

Methane reaction
product CH4

Excess TMA

H
H

Al
O

Substrate surface (e.g. Si)

Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl

groups, until the surface is passivated. TMA does not react with
itself, terminating the reaction to one layer. This causes the perfect
uniformity of ALD. The excess TMA is pumped away with the
methane reaction product.

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ALD cycle for Al2O3

H2O
H

H
H

C
Al
O

After the TMA and methane reaction product is pumped away,

water vapor (H2O) is pulsed into the reaction chamber.

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ALD cycle for Al2O3

Methane reaction product
New hydroxyl group
Methane reaction
product

Oxygen bridges

O
Al

Al

O
Al

H2O reacts with the dangling methyl groups on the new surface
forming aluminum-oxygen (AI-O) bridges and hydroxyl surface
groups, waiting for a new TMA pulse. Again, methane is the
reaction product.
2 H2O (g) + :Si-O-Al(CH3)2

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(s)

:Si-O-Al(OH)2

(s)

+ 2 CH4

ALD cycle for Al2O3

H

O
Al

O
Al

O
Al

The reaction product methane is pumped away. Excess H2O vapor

does not react with the hydroxyl surface groups, again causing
perfect passivation to one atomic layer.

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ALD cycle for Al2O3

H

Al
O

Al
O

Al

O O

Al
O

Al

O O

Al
O

Al
O

Al

Al

One TMA and one H2O vapor pulse form one cycle. Here three

cycles are shown, with approximately 1 Angstrom per cycle. Each

cycle including pulsing and pumping takes, e.g. 3 sec.
Two reaction steps in
each cycle:

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Al(CH3)3 (g) + :Al-O-H

(s)

2 H2O (g) + :O-Al(CH3)2

9

(s)

:Al-O-Al(CH3)2

(s)

+ CH4

:Al-O-Al(OH)2

(s)

+ 2 CH4

ALD cycle for Al2O3

The saturative chemisorption of each layer and its subsequent

monolayer passivation in each cycle, allows excellent uniformity

into high aspect ratio 3D structures, such as DRAM trenches,
MEMS devices, around particles, etc.

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Deposition advantages
Alternating reactant exposure creates unique
properties of deposited coatings:
Thickness determined simply by number of cycles
Precursors are saturatively chemisorbed => stoichiometric films

with large area uniformity and 3D conformality

Relatively insensitive to dust (film grows underneath dust
particles)
Intrinsic deposition uniformity and small source size => easy
scaling
Nanolaminates and mixed oxides possible
Low temperature deposition possible (RT-400 C)
Gentle deposition process for sensitive substrates

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Corporate Overview
Cambridge NanoTech ALD systems
The world leader in ALD systems for research
100+ peer-review ALD papers written on the Savannah
Phoenix Production ALD system into production in Asia and the USA
March 2008
Introduction of the Fiji plasma ALD system in Autumn 2008

Cambridge NanoTech ALD scientists use Cambridge NanoTech ALD

systems for their own ALD research

Complete customer support for ALD
research:
Research collaboration
Recipe development
Films development/characterization
ALD applications support

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ALD Systems
Savannah - Thermal ALD System for R&D

More than 100 systems sold

Fiji Plasma ALD System for R&D
Next generation plasma ALD system
Phoenix Production Thermal ALD System
Batch production for Gen 2 substrates and wafers
In production in Taiwan and USA

Savannah
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Fiji

Phoenix
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Savannah ALD Systems

Worlds most popular ALD system for R&D
Great films and easy to use
System set up in under 3 hours
Intuitive user interface very easy to learn
Recipes included
Savannah
S300
introduction
at AVS 55
Show
October,
2008
Savannah S100
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Savannah S200
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Savannah S300

Patent Pending ALD

Vapor Trap

TM
Shield

Flow direction

Coating
No
coating

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Cambridge NanoTechs high

conductance hot foil ALD trap
forms a uniform solid coating
until the precursor is depleted.
Traps can be cleaned after 100
m of coating.

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Fiji: Next Generation Plasma

ALD System
Revolutionary reactor design built from ALD
principals, NOT a converted CVD chamber:

Contoured shape for laminar flow and uniform

depositions
Design eliminates gate valves in the reactor
Close mixing of precursor and plasma gases

Based on world class Savannah ALD system

Proven precursor delivery system
Integrated ALD Shield vapor trap

Modular design and many configurations

Full and short cabinet designs
Optional include load lock, turbo pumps, and
automatic pressure control (APC)
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Fiji Configurations
Long Cabinet
Fiji F200LL

Fiji F200LC

Long Cabinet with Load Lock

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Long Cabinet with Load Lock

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Fiji Configurations
Short Cabinet
Fiji F200SC

Fiji F202 DC

Short Cabinet Single Chamber

Short Cabinet Dual Chamber

(shown with optional gate valve)

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Phoenix Batch ALD System

Phoenix System Overview
Batch ALD production system
5 GEN 2 substrates (370x470 mm)
52 wafers: 200 mm
78 wafers: 150 mm
Large objects
Deposition temperature: 85285 C
Uniformity < 3% 2-sigma (Al2O3)
Small footprint: 700x700 mm
Optimized for low maintenance
stainless steel liner and trap easily
exchanged for periodic cleaning
Exchange time approx. 1 hour
Patent pending trap prevents coating inside the
pumping line and pump decreasing pumping line
and pump maintenance
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Wafer Cassette Design

Wafer Cassette Design:
Open design reduces weight and
thermal mass while providing
maximum flow uniformity
Stainless steel construction to allow
for etch cleaning
Backside Teflon guides to ensure
easy cassette transfer
26 wafers per cassette permits a
monitor wafer in each cassette

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Phoenix Maintenance
Scheduled Maintenance:
Stainless liner, door and trap are the only wetted
(coated) parts :
Liner removed from chamber
Trap removed from inside chamber
Designed for 10,000 nm (400 runs of 25 nm films)
Replacement time: 60 minutes

Maintenance Manual:
Complete listing of quarterly and semi-annual
maintenance procedures
Step-by-step instructions with pictures
Complete package of drawings and schematics in
Appendix
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Phoenix Summary
Compact ALD production tool (footprint of 700x700 mm)
with exceptional uniformity (Al2O3 <3% two )
Designed for very low maintenance (1 hour)
only three parts to be exchanged every 10 m of coating
(400 runs of 25 nm)

Patent-pending heated honeycomb vapor trap that

prevents coating inside the pumping line and pump
Safety features such as a vented cabinet and factoryintegrated smoke detection system
The Phoenix ALD system can process up to 52 six inch
wafers at one time and ranges in deposition temperature
from 85 C to 285 C
The Phoenix comes standard with a manual door or can
be automated with a pneumatic gate valve and cassette
loading mechanism
Complete with qualified recipes and first year warranty,
support and maintenance included
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Cambridge NanoTech Summary

Cambridge NanoTech is a world leader in ALD technology
World-class ALD scientist led by Dr. Jill Becker, Founder
Leading ALD research with association with Harvard Univ.
Leader in ALD R&D systems with over 100 Savannahs worldwide
Many satisfied customers and references
Developed Phoenix and Fiji ALD systems under contract with CNT
customers
Leading Semiconductor manufacturer hired CNT to develop
the Phoenix ALD production system
Leading R&D Institute hired CNT to develop the next
generation plasma ALD system - Fiji
www.cambridgenanotech.com
See Website for additional information
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