MITSUBISHI SEMICONDUCTOR TRIAC

BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

OUTLINE DRAWING

BCR8PM

Dimensions
in mm

10.5 MAX
2.8

8.5

17
5.0

1.2

5.2

TYPE
NAME

3.20.2

VOLTAGE
CLASS

13.5 MIN

3.6

1.3 MAX

0.8

2.54

IT (RMS) ........................................................................ 8A
VDRM ..............................................................400V/600V
IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) 5
Viso ........................................................................ 1500V
UL Recognized: File No. E80276

123

0.5

4.5

2.54

2.6

Measurement point of
case temperature

1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL

TO-220F

APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets stereo refrigerator washing machine infrared
kotatsu carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol

Voltage class

Parameter

12

Unit

VDRM

Repetitive peak off-state voltage 1

400

600

VDSM

Non-repetitive peak off-state voltage 1

500

720

Symbol

Conditions

Parameter

IT (RMS)

RMS on-state current

Commercial frequency, sine full wave 360 conduction, Tc =88C

ITSM

Surge on-state current

I2t

I2t

PGM

Peak gate power dissipation

PG (AV)

Average gate power dissipation

VGM

for fusing

Ratings

Unit

60Hz sinewave 1 full cycle, peak value, non-repetitive

80

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

26

A2s

0.5

Peak gate voltage

10

IGM

Peak gate current

Tj

Junction temperature
Storage temperature

Tstg

Viso

Weight

Typical value

Isolation voltage

Ta=25C, AC 1 minute, T 1 T2 G terminal to case

40 ~ +125

40 ~ +125

2.0

1500

1. Gate open.

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Symbol

Limits

Test conditions

Parameter

Min.

Typ.

Max.

Unit

IDRM

Repetitive peak off-state current

Tj=125C, V DRM applied

2.0

mA

VTM

On-state voltage

Tc=25C, ITM=12A, Instantaneous measurement

1.6

1.5

1.5

1.5

VFGT !
VRGT !

Gate trigger voltage 2

Tj=25C, VD =6V, RL=6, RG=330

VRGT #

IFGT !

30 5

mA

30 5

mA

30 5

mA

0.2

3.7

C/ W

V/s

IRGT !

Gate trigger current 2

Tj=25C, VD =6V, RL=6, RG=330

IRGT #
VGD

Gate non-trigger voltage

Tj=125C, VD=1/2VDRM

R th (j-c)

Thermal resistance

Junction to case 4

(dv/dt) c

Critical-rate of rise of off-state

commutating voltage

2. Measurement using the gate trigger characteristics measurement circuit.

3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
4. The contact thermal resistance R th (c-f) in case of greasing is 0.5C/W.
5. High sensitivity (I GT20mA) is also available. (IGT item 1)

Voltage
class

VDRM
(V)

400

(dv/dt) c
Symbol

Min.

SUPPLY
VOLTAGE

1. Junction temperature
Tj =125C
L

10
V/s

R
12

Commutating voltage and current waveforms

(inductive load)

Test conditions

Unit

2. Rate of decay of on-state commutating current

(di/dt)c=4.0A/ms
3. Peak off-state voltage
VD =400V

600
L

TIME

MAIN CURRENT

(di/dt)c
TIME

MAIN
VOLTAGE

TIME

(dv/dt)c

10

VD

PERFORMANCE CURVES
RATED SURGE ON-STATE CURRENT

101
7
5
3
2

100

Tj = 125C

Tj = 25C

100
7
5
3
2
101

0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8

ON-STATE VOLTAGE (V)

SURGE ON-STATE CURRENT (A)

ON-STATE CURRENT (A)

MAXIMUM ON-STATE CHARACTERISTICS

102
7
5
3
2

90
80
70
60
50
40
30
20
10
0
100

2 3 4 5 7 101

2 3 4 5 7 102

CONDUCTION TIME
(CYCLES AT 60Hz)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

101
7
5
3
2

PG(AV) = 0.5W
PGM = 5W
IGM = 2A

VGT = 1.5V

100
7
5
3
2
IFGT I IRGT I, IRGT III
VGD = 0.2V
101
7
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104

GATE TRIGGER CURRENT (Tj = tC)

GATE TRIGGER CURRENT (Tj = 25C)

GATE VOLTAGE (V)

3
2 VGM = 10V

100 (%)

GATE CHARACTERISTICS
103
7
5
4
3
2

TYPICAL EXAMPLE

IRGT III

102
IRGT I IFGT I
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140

GATE CURRENT (mA)

JUNCTION TEMPERATURE (C)

MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)

103
7
5
4
3
2

TYPICAL EXAMPLE

102
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140

TRANSIENT THERMAL IMPEDANCE (C/W)

GATE TRIGGER VOLTAGE (Tj = tC)

GATE TRIGGER VOLTAGE (Tj = 25C)

100 (%)

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)

JUNCTION TEMPERATURE (C)

103

7
5
3
2

NO FINS

102

7
5
3
2

101

7
5
3
2

100

7
5
3
2

101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
CONDUCTION TIME
(CYCLES AT 60Hz)

MAXIMUM ON-STATE POWER

DISSIPATION
ON-STATE POWER DISSIPATION (W)

TRANSIENT THERMAL IMPEDANCE (C/W)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
16
14

12 360
CONDUCTION
10 RESISTIVE,
INDUCTIVE
8 LOADS
6
4
2
0

10

12

14

16

RMS ON-STATE CURRENT (A)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

CASE TEMPERATURE (C)

160

CURVES APPLY REGARDLESS

OF CONDUCTION ANGLE

140
120
100
80
60

360
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6

10

12

14

AMBIENT TEMPERATURE (C)

ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT

16

ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
120

120 120 t2.3

100 100 t2.3

100

60 60 t2.3

80
60
40
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6

RMS ON-STATE CURRENT (A)

60
40
20

HOLDING CURRENT (Tj = tC)

HOLDING CURRENT (Tj = 25C)

100 (%)

103
7
5
4
3
2

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION
TEMPERATURE

100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)

80

105
7 TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
60 40 20 0 20 40 60 80 100 120 140

RMS ON-STATE CURRENT (A)

JUNCTION TEMPERATURE (C)

HOLDING CURRENT VS.

JUNCTION TEMPERATURE

LACHING CURRENT VS.

JUNCTION TEMPERATURE

TYPICAL EXAMPLE
LACHING CURRENT (mA)

AMBIENT TEMPERATURE (C)

RMS ON-STATE CURRENT (A)

ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100

NATURAL
CONVECTION
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
8 10 12 14 16

102
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (C)

103
7
5
3
2

,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION

102
7
5
3
2

101
7
5
3
2

T2+, G
TYPICAL
EXAMPLE

T2+, G+ TYPICAL

T2 , G EXAMPLE

100
40

40

80

120

160

JUNCTION TEMPERATURE (C)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR8PM
MEDIUM POWER USE

160
TYPICAL EXAMPLE
140

BREAKOVER VOLTAGE VS.

RATE OF RISE OF
OFF-STATE VOLTAGE
160

TYPICAL EXAMPLE
Tj = 125C

120
100
80
60
40
20
0
60 40 20 0 20 40 60 80 100120 140

BREAKOVER VOLTAGE (dv/dt = xV/s )

BREAKOVER VOLTAGE (dv/dt = 1V/s )

140
120
100
80
60

III QUADRANT

40
I QUADRANT

20

0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)

COMMUTATION CHARACTERISTICS

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

VOLTAGE WAVEFORM

3 TYPICAL
2 EXAMPLE
102 Tj = 125C
7 IT = 4A
5 = 500s
3 VD = 200V
2 f = 3Hz

t
(dv/dt)C

VD

CURRENT WAVEFORM
(di/dt)C
IT

101
7
I QUADRANT
5
3 MINIMUM
2 CHARAC100 TERISTICS III QUADRANT
7 VALUE
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)

100 (%)

JUNCTION TEMPERATURE (C)

GATE TRIGGER CURRENT (tw)

GATE TRIGGER CURRENT (DC)

CRITICAL RATE OF RISE OF OFF-STATE

COMMUTATING VOLTAGE (V/s)

BREAKOVER VOLTAGE (Tj = tC)

BREAKOVER VOLTAGE (Tj = 25C)

100 (%)

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

100 (%)

INSULATED TYPE, PLANAR PASSIVATION TYPE

103
7
5
4
3
2

TYPICAL EXAMPLE
IFGT I
IRGT I
IRGT III

102
7
5
4
3
2
101 0
10

2 3 4 5 7 101

2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (s)

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

6

6V
V

6V
RG

TEST PROCEDURE 1

RG

TEST PROCEDURE 2

6V
V

RG

TEST PROCEDURE 3
Feb.1999

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.