ISSUE 5.0/17.06.

2015

QP08/15-16/AB/LEP/05

SRI RAMAKRISHNA ENGINEERING COLLEGE, COIMBATORE-22

DEPARTMENT: EEE
SUBJECT CODE & TITLE: 12EC2201 & ELECTRON DEVICES
CLASS: I EEE - B

SEMESTER: II

Aim:
The aim of this course is to familiarize the student with the principle of operation capabilities and limitations of various electron
devices so that students will be able to use these devices effectively.
Course Objective

To understand the basics of Electron Ballistics.

To study the operation of semi-conductor diodes and its applications.

To know the working principle and characteristics of bipolar junction transistor.

To study the principle and operation of FET and UJT.

To understudy the basic concepts of special semi-conductor devices.

Name of the Faculty: Ragavapriya.R.K, AP/EEE

LESSON PLAN
Text Book/
Reference
Book
UNIT I ELECTRON BALLISTICS AND SEMICONDUCTOR THEORY
1.
Charged Particles, Force on Charged Particles
T1, R1, R2

Lecture
Hours

2.
3.
4.
5.
6.
7.
8.
9.

Portions to be Covered

Constant Field potential, Field Intensity

T1, R1, R2

Force in Magnetic field, Motion in a magnetic field

T1, R1, R2

Parallel Electric and magnetic field

T1, R1, R2

Perpendicular Electric and magnetic field

T1, R1, R2

Intrinsic and Extrinsic semiconductors

T1, R1, R2

Energy band theory

T1, R1, R2

Charge densities, mobility, Conductivity

T1, R1, R2

Drift and diffusion current - Simple problems

T1, R1, R2

UNIT II SEMICONDUCTOR DIODES

10.
Construction of PN Junction diodes
11.
12.
13.
14.
15.
16.
17.
18.

VI Characteristics (forward and reverse bias)

Energy band structure of open circuited PN junction
Quantitative theory of PN diode, Diode current equation
Diode resistance, Transition and diffusion capacitances
Effect of temperature on PN Junction diode
Model of Diode, Diode specification
Clipping Circuits, Characteristics of Zener Diode
Clamping Circuits its working and types- Voltage multipliers

UNIT III BIPOLAR JUNCTION TRANSISTORS

19.
Construction of a Transistor, Principle of Transistor action
20.
21.
22.

Teaching Methodology
planned

Activity Planned for

Learners

CHALK AND BOARD

CLASS INTERACTION
INTERSPERSED WITH
DISCUSSION

CHALK AND BOARD

CLASS INTERACTION
INTERSPERSED WITH
DISCUSSION

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Currents in transistor

T1, R1, R2

Input, output characteristics CB, CE Configurations

T1, R1, R2

Input, output characteristics in CC Configuration

T1, R1, R2

CHALK AND BOARD

CLASS INTERACTION
INTERSPERSED WITH
DISCUSSION

ISSUE 5.0/17.06.2015
23.
24.
25.
26.
27.

QP08/15-16/AB/LEP/05

Cut off, active saturation

T1, R1, R2

Break down regions

T1, R1, R2

H parameter model for BJT

T1, R1, R2

BJT specification

T1, R1, R2

Transistor as a switch

T1, R1, R2

UNIT IV FIELD EFFECT TRANSISTORS AND UJT

28.
Construction and characteristics, parameters of JFET
29.
30.
31.
32.
33.
34.
35.
36.

MOSFET Depletion mode

T1, R1, R2

MOSFET Enhancement mode

T1, R1, R2

FET in CS, CD and CG Configurations

T1, R1, R2

Equivalent circuits of FET at low frequencies

T1, R1, R2

FET model at high frequencies

T1, R1, R2

FET specification

T1, R1, R2

Construction of UJT

T1, R1, R2

Theory of operation and Characteristics of UJT

UNIT V SPECIAL SEMICONDUCTOR DEVICES

37.
Construction and principle - Tunnel Diodes
38.
39.
40.
41.
42.
43.
44.
45.

T1, R1, R2

Construction and principle - Pin diode

Construction and principle - Varactor diodes
Construction and Characteristics of SCR
Construction and Characteristics of SCR
Construction and principle DIAC TRIAC
Construction and principle - Photo diodes
Construction and principle Photo transistors
Construction and principle - Optocoupler

CHALK AND BOARD

CLASS INTERACTION
INTERSPERSED WITH
DISCUSSION

OHP SLIDES

CLASS INTERACTION
INTERSPERSED WITH
DISCUSSION

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Total No. of hours required to complete the syllabus: 45 Hours

Content Beyond the syllabus :

Lecture
Hours

Portions to be Covered

1.

Introduction to 3D Transistor, 3 D - FET an overview

2.

Introduction to LED wireless & its applications

3.

Concepts of Fiber optics technology and construction

Text Book/
Reference
Book
INTEL CORE
WEBSITE
BERKELEY
EDU
T1, R1

Teaching Methodology
planned

Activity Planned for

Learners

CHALK AND BOARD

CHALK AND BOARD

CLASS INTERACTION
INTERSPERSED WITH
DISCUSSION

CHALK AND BOARD

Total No. of hours required to complete the content beyond the syllabus: 3 Hours

TEXT BOOKS:
T1) Jacob Millman, Christos C Halkias, Electronic Devices &Circuits, Tata McGraw Hill Publications Ltd, 3 rd edition, New Delhi, 2010.
T2) Robert. L. Boylestad, Louis Nashalskey, Electronic Devices &Circuits, Pearson Education, India, 10th edition, 2009.

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QP08/15-16/AB/LEP/05

REFERENCE BOOKS:
R1) David A Bell., Electronic Devices &Circuits, Oxford University Press, 5th edition, 2009.
R2) Salivahanan S, Suresh Kumar N and Vallavaraj A Electronic Devices and Circuits, Tata McGraw Hill Publications Ltd, 2 nd edition
2008.

Staff In-charge
Ragavapriya.R.K, AP/EEE

HOD/EEE