TPCA8109

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS)

TPCA8109
Lithium Ion Battery Applications
Power Management Switch Applications

Unit: mm
1.27 0.4 0.1
8

0.95 0.05

Absolute Maximum Ratings (Ta = 25C)

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

Drain-gate voltage (RGS = 20 k)

VDGR

30

Gate-source voltage

VGSS

25/+20

(Note 1)

ID

24

Pulsed (Note 1)

IDP

72

PD

30

PD

2.8

PD

1.6

EAS

75

mJ

Avalanche current

IAR

24

TOSHIBA

Channel temperature

Tch

150

Weight: 0.076 g (typ.)

Storage temperature range

Tstg

55 to 150

Drain current

DC

Drain power dissipation

Drain power dissipation

(Tc=25C)
(t = 10 s)
(Note 2a)

Drain power dissipation

(t = 10 s)
(Note 2b)

Single pulse avalanche energy

(Note 3)

0.595

5.0 0.2

0.05 S

1
0.6 0.1

Characteristics

0.166 0.05

Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 0.5mA)

4.25 0.2

Note: For Notes 1 to 3, refer to the next page.

1.1 0.2

Low leakage current: IDSS = 10 A (max) (VDS = 30 V)

3.5 0.2

0.15 0.05

0.8 0.1

Low drain-source ON-resistance: RDS (ON) = 7 m (typ.)

5.0 0.2

Small footprint due to small and thin package

6.0 0.3

0.05 M A

1,2,3SOURCE
4GATE
5,6,7,8DRAIN

JEDEC

JEITA

2-5Q1A

Circuit Configuration

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

This transistor is an electrostatic sensitive device. Please handle with

caution.

Start of commercial production

2009-10

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TPCA8109
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
(Tc=25C)
Thermal resistance, channel to ambient
(t = 10 s)

(Note 2a)

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2b)

Symbol

Max

Unit

Rth (ch-c)

4.17

C/W

Rth (ch-a)

44.6

C/W

Rth (ch-a)

78.1

C/W

Marking (Note 4)
TPCA
8109

Type
Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

FR-4
25.4 25.4 0.8
(Unit: mm)

FR-4
25.4 25.4 0.8
(Unit: mm)

(b)

(a)

Note 3: VDD = 24 V, Tch = 25C (initial), L = 100H, RG = 25 , IAR = -24 A

Note 4: * Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)

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TPCA8109
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 20 V, VDS = 0 V

100

nA

Drain cut-OFF current

IDSS

VDS = 30 V, VGS = 0 V

10

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

V (BR) DSX

ID = 10 mA, VGS = 10 V (Note5)

21

VDS = 10 V, ID = 0.5 mA

0.8

2.0

VGS = 4.5V, ID = 12 A

10

13

VGS = 10 V, ID = 12 A

2400

400

460

9.2

16

58

172

56

5.6

15

Vth

Drain-source ON resistance

RDS (ON)

Input capacitance

Ciss

Reverse transfer capacitance

Crss

Output capacitance

Coss
Rise time

tr

Turn-on time

ton

VDS = 10 V, VGS = 0 V, f = 1 MHz

0V
VGS
10 V

Switching time
Fall time

ID = 12 A
VOUT
RL = 1.25

Gate threshold voltage

4.7

Drain-source breakdown voltage

tf

V
V
m

pF

ns

VDD 15 V
Turn-off time

toff

Total gate charge

(gate-source plus gate-drain)

Duty 1%, tw = 10 s

Qg

Gate-source charge 1

Qgs1

Gate-drain (miller) charge

Qgd

VDD 24 V, VGS = 10 V,
ID = 24 A

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics
Drain reverse current
Forward voltage (diode)

Pulse

(Note 1)

Symbol

Test Condition

Min

Typ.

Max

Unit

IDRP

72

1.2

VDSF

IDR = 24 A, VGS = 0 V

Note 5: V(BR)DSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum
rating of drain-source voltage.

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TPCA8109

ID VDS

10 6 4.5
10

2.6

ID VDS

(A)
ID

10

3.6

3.2

2.3

(A)

2.2

Drain current

ID
Drain current

50

Common source
2.4
Ta = 25C
Pulse test

4
2.1
2

40

Common source
Ta = 25C
Pulse test

4.5

2.8

30

2.6
20
2.4
10

2.2

VGS = 1.9 V

0
0

0.2

0.4

0.6

0.8

Drainsource voltage

VDS

0
0

(V)

0.4

20

VDS (V)

25
Ta = 55C

100

10

0
0

(V)

VDS VGS

Drainsource voltage

Drain current

(A)
ID

30

VDS

0.5

Common source
VDS = 10 V
Pulse test

40

VGS = 2 V
1.6
2

1.2

Drain-source voltage

ID VGS
50

0.8

Gatesource voltage

VGS

0.4

0.3

0.2

(V)

ID = 24 A

0.1

12
6

0
0

Common source
Ta = 25C
Pulse test

12

Gatesource voltage

16

VGS

20

(V)

RDS (ON) ID

Drainsource ON-resistance
RDS (ON) (m)

100

Common source
Ta = 25C
Pulse test

4.5

10

VGS = 10 V

1
0.1

Drain current

10

ID

100

(A)

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TPCA8109

RDS (ON) Ta

IDR VDS
100

20

IDR

ID = 6, 12, 24 A
12
VGS = 4.5 V
8

ID = 6, 12, 24 A
VGS = 10 V

0
80

40

10

(A)

16

Drain reverse current

Drain-source ON-resistance
RDS (ON) (m)

Common source
Pulse test

40

80

Ambient temperature

120

Ta

10

VGS = 0 V

Common source
Ta = 25C
Pulse test
0.1
0

160

3
4.5

(C)

0.2

0.4

Drainsource voltage

Capacitance VDS

0.8

VDS

1.2

(V)

Vth Ta
2

(pF)

Vth (V)

10000

Gate threshold voltage

Ciss

C
Capacitance

0.6

1000

Coss
Crss

Common source
VGS = 0 V
f = 1 MHz
Ta = 25C

100
0.1

10

Drainsource voltage

1.2

0.8

0.4

0
80

100

VDS

1.6

Common source
VDS = 10 V
ID = 0.5mA
Pulse test
40

40

Ambient temperature

(V)

80

Ta

120

160

(C)

VDD = 24 V
VDS

20

20

15

15
6

12

VDD = 24 V

10

12
6

0
0

10

VGS

20

40

Total gate charge

60

Qg

80

100

VGS

25

30
Common source
ID = 24 A
Ta = 25C
25
Pulse test

Gatesource voltage

Drainsource voltage

VDS (V)

30

(V)

Dynamic input/output
characteristics

(nC)

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TPCA8109

rth tw

Transient thermal impedance

rth (C/W)

1000

100

(1) Device mounted on a glass-epoxy board (a) (Note 2a)

(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25

(2)

(1)
10
(3)
1

0.1
Single Pulse
0.01
0.0001

0.001

0.01

0.1

Pulse width

tw

10

100

(s)

PD Tc

PD Ta
(Note 2a)

(W)

board(a)

(1)

(2)Device mounted on a glass-epoxy

board(b)

(Note 2b)

PD

2.5

t = 10 s

Drain power dissipation

Drain power dissipation

40

(1)Device mounted on a glass-epoxy

PD

(W)

(2)
1.5

0.5

40

80

Ambient temperature

1000

120

Ta

30

20

10

160

40

80

Case temperature

(C)

120

Tc

160

(C)

Safe operating area

100 ID max (Pulse) *

Drain current

ID

(A)

1000

1 ms *
t = 10 ms *

10

*: Single pulse
Ta = 25C
Curves must be derated
linearly with increase in
temperature.

0.1
0.1

Drainsource voltage

VDSS max
10

VDS

100

(V)

2013-11-01

TPCA8109
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2013-11-01