Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Index
I- Introduction to Electricity
II- Ohms Law
III- Testing equipment / Devices
IV- Electronics Component Passive elements
V- Electronics Component Semiconductors
VI- Power Electronics
I- Introduction to Electricity
I- Introduction to Electricity
The work done per unit charge to move the charge between two points is called
Voltage (V), also called electromotive force.
Voltage is measured by using unit called Volts (V)
For better understanding, let us use water analogy
The Ability to oppose the electrical current is called Resistance (R)
Resistance is measured using unit called Ohm ()
I- Introduction to Electricity
Types of current
Direct Current (DC) : Is the unidirectional flow of electric charge . Direct current is
produced by sources such as batteries, DC power supplies
Link
Alternative current (AC): the flow of electric charge periodically reverses direction
Comparison
I- Introduction to Electricity
Types of current
Ground is used as a reference points
This point is used when measuring voltage across the circuit
Exercise : Which circuit diagram below correctly shows the connection of ammeter A
and voltmeter V to measure the current through and potential difference across
resistor R?
Material
used
Carbon
Metal
Metal
glassed
Function
Others
Variable
Fixed
o
o
-
Variable resistors usually have three pins. Two ends with the resistor in between and one
wiper. The wiper can take a resistor value between zero and the maximum according to
the position.
NTC: Negative temperature coefficient, used in Surge current limiting in power supplies
PTC: Positive Temperature coefficient, used in motor starting circuit, delay, protection
LDR: Light dependent resistor, any circuit depends on light
VDR: Voltage dependent resistor, used as protection
Capacitors are passive electrical components used to store energy in an electrical field
Capacitors contain at least two electrical conductors (plates) separated by a dielectric
Each Capacitor has capacity (C ), measured in Farad [F]
Capacity defined as the ratio of charge Q on each conductor to the voltage V between
them
, Farad is huge value, so most of capacitors found in values , n, and p farad
See the charging / discharging behavior of the capacitor, bith depend on
Capacity
Resistance in the circuit
Time constant =RC
0.047F
10p
10pF
330n
330nF
47F
47F
33
33pF
10
10pF
471
470pF
Rating voltage of the capacitor should be considered also, when replacing a capacitor, the
rating voltage should be equal or greater than the voltage of the defective one
Current decaying phase , inductor resist the current decaying and acting as voltage
source
Resonance circuits
Normally
open
contacts
Normally
closed
contacts
Relay operation
Relay
coil
Common
V- Semiconductors
Introduction
A semiconductor material has an electrical conductivity value between a conductor and
an insulator
The most commonly used semiconductor are silicon & Germanium
Each silicon atom has an outer shell with four valence electrons and four vacancies (It is
a tetravalent element)
In intrinsic (pure) silicon, atoms join together by forming covalent bonds
Each atom shares its valence electrons with each of four adjacent neighbours
effectively filling its outer shell
Group III
+3
Group IV
Group V
+4
+5
Boron (B)
Carbon (C)
Nitrogen (N)
Aluminium (Al)
Silicon (Si)
Phosphorus (P)
Gallium (Ga)
Germanium (Ge)
Arsenic (As)
V- Semiconductors
Introduction
By adding impurities to the intrinsic semiconductor we can change the conductivity of the
material this is called doping
N-type doping
P-type doping
N-type: pentavalent (atom with 5 valence electrons) impurity atoms are added
[Sb(Antimony) + Si]
Negative charges (electrons) are generated
N-type has lots of free electrons
P-type: trivalent (atom with 3 valence electrons) impurity atoms are added
[B(Boron) + Si]
Positive charges (holes) are generated
P-type has lots of holes
P-type
N-type
V- Semiconductors
P-N Junction (Diode)
N region has lots of free electrons, while P region has lots of holes
In order to move electrons through the electric field (generate current) we need some
force (voltage)
This potential difference is called barrier voltage
When enough voltage is applied, electrons are moved then we are biasing the diode
Two layers of positive and negative charges for depletion region the region near the
pn-junction is depleted of charge carriers)
There are two types of biasing, Forward and reveres
Forward
biasing
Reversed
biasing
V- Semiconductors Diodes
P-N Junction (Diode)
Zener Diode : Used in as Voltage regulator, keep the voltage fixed on load, very
common in power supply and regulators circuits
Variacp Diode : Used as capacitor, its capacity change when the revers biasing voltage
is changed on its terminals, very common in receivers and tuning circuts
V- Semiconductors Diodes
Light Emitting Diodes (LED):
Diode Testing
V- Semiconductors Diodes
Diodes Applications : Rectifiers in Power supplies
o
o
o
Basic components
Transformer (not shown)
Rectifier
Filter
Or
V- Semiconductors Transistor
Introduction
V- Semiconductors Transistor
Bipolar Junction Transistor (BJT)
Transistor share
feature with
V- Semiconductors Transistor
Bipolar Junction Transistor (BJT)
IE = IB + IC
VCE = -VBC + VBE
V- Semiconductors Transistor
Bipolar Junction Transistor (BJT)
Basic circuit
Saturation
Cutoff
V- Semiconductors Transistor
BJT Applications
Electrical Switch
Transistor is working either in Saturation or cut off region
Amplifier
Common emitter circuit is the
most common transistor used
V- Semiconductors Transistor
BJT Applications
Regulation loop
Vout VBQ2 IBQ2 ICQ2 IBQ1VBQ1 ICQ1IEQ1Vout
Z-diode keep increase the reference voltage
V- Semiconductors Transistor
Field Effect Transistor
V- Semiconductors Transistor
Field Effect Transistor
V- Semiconductors Transistor
BJT VS FET
1
2
3
4
5
6
7
8
9
10
11
12
13
Cheap
Easy to bias
C, B, E are the terminals
V- Semiconductors Transistor
BJT , FET testing
BJT testing
FET testing
I H0
I H1
VR
I H2
0
IR
VF
Protection circuit
I
SW
Fuse
R1
DC
power supply
R2
R3
B
VOUT
D1
R4
D2
R1
VTRIG
R2
R3
"Crowbar circuit"
A1
G
A2
IH0
Triac on
RL
A1
Vin
G
VG
A2
IL
Delay
angle
Conduction
angle
VA
IG1
IG0
IH1
IH2
IH2
IH1
IG0
IG1
IG2
IH0
I A
VA