ECEE 472/519

RF Electronics

CAD Lab I:
Transistor Library Models

To: Dr. Daryoush

Li Zhang

From: Stephen Watt

Date Performed: Jan. 24, 2014

Date Submitted: Feb 1, 2014

OBJECTIVE
The objective of CAD Experiment I was simulation of the static and dynamic behavior of
commercial FET and BJT in various classes of operation and input-output ports.

THEORY
Biasing of FET and BJT amplifiers enable the designer to choose the mode of operation
(saturation, linear, cutoff) and the class of operation for the amplifier (A, B, AB, C). Different
DC biasing for amplifier circuits can modify the frequency response, linearity, and noise of the
circuit. Six different amplifier configurations were examined during the CAD Lab I analysis.

Figure 1. BJT and FET amplifier configurations without bias circuits

EXPERIMENTAL SETUP
The student used the curve tracing simulation tools in Agilent ADS to produce the I-V curves for
both the Mitsubishi FET and Agilent BJT. The characteristic curves provided the voltage and
current information needed to design the DC biasing circuits for the amplifiers. Next, the Sparameters for each MGF1302 and HBFP0420 amplifier circuit were calculated.

Figure 2. Agilent ADS tools used to analyze BJT and FET amplifiers

CALCULATIONS & DESIGN

Using the provided DC bias conditions, the student calculated the circuit component values to
achieve the desired current and voltage levels.
AC Bias Circuit Calculations
=
=

2.5
=
= 7.96
(2) (2(50))

1
1
=
= 6.37
(2) (2(50)0.5)

DC Bias Circuit Equations

[]
[]

Case 1
Case 2
Case 3
Case 4
Case 5

Case 1
Case 2
Case 3
Case 4
Case 5

CS
CG
CD

=
=

+1

( )

2
= (
)
2 + 1
= (

2
)
2 + 1

Mitsubishi MGF1302 GD4 FET

Agilent HBFP0420 SOT-343 BJT
Ids = 40 mA, Vds = 2V
Ic = 15 mA, Vce= 8V
Ic = 50 mA, Vce= 8V
Ids = 20 mA, Vds = 2V
Ids = 5 mA, Vds = 1.5V
Ic = 0A, Vce= 8V
Ids = 0 mA, Vds = 1.5V
Ic = 40 mA, Vce= 8V
Ids = 15 mA, Vds = 0.25V
Ic = 7 mA, Vce = 0.25 V
Table 1. Self-bias cases analyzed for amplifier circuits
Mitsubishi MGF1302 GD4 FET
Agilent HBFP0420 SOT-343 BJT
RS ()
RD ()
RB ()
RC ()
RE ()
1.25
73.75
48.8k
185
246.8
15
135
13.9k
58
77.33
110
590
1.0E14
5
6.0E9
3.3E24
9.4E24
18.3k
75
98.6
14.3
325
Table 2. Calculated bias components for five cases
RD ()
RS ()
R1 ()
R2 ()
RFC (nH)
1
1
7.96
135
15
7.96
150
4.26k
5.0k
7.96
Table 3. Calculated bias components for Case 2 FET circuits

CC (nF)
6.37
6.37
6.37

CE
CB
CS

RC ()
RE ()
R1 ()
R2 ()
RFC (nH)
352.1
150
7.0k
5.78k
7.96
352.1
150
7.96
172.62
7.0k
7.38k
7.96
Table 4. Calculated bias components for Case 4 BJT circuits

RESULTS
FET and BJT Characteristic Curves

CC (nF)
6.37
6.37
6.37

FET and BJT Self Bias Circuits

FET Bias Circuits

FET Case 1: Ids = 40 mA, Vds = 2V

FET Case 2: Ids = 20 mA, Vds = 2V

FET Case 3: Ids = 5 mA, Vds = 1.5V

FET Case 4: Ids = 0 mA, Vds = 1.5V

FET Case 5: Ids = 15 mA, Vds = 0.25V

Common Source FET

Common Gate FET

Common Drain FET

BJT Self Bias Circuits

BJT Case 1: Ic = 15 mA, Vce= 8V

BJT Case 2: Ic = 50 mA, Vce= 8V

BJT Case 3: Ic = 0A, Vce= 8V

BJT Case 4: Ic = 40 mA, Vce= 8V

BJT Case 5: Ic = 7 mA, Vce = 0.25 V

Common Emitter BJT

Common Base BJT

Common Collector BJT

ANALYSIS
The BJT amplifier bias conditions and configurations showed the frequency response of a highpass filter. The FET amplifier bias conditions and configurations maintained the frequency
response of band pass filters. The S11 and S22 of the amplifiers showed response outside of the
=1 circle, characteristic of an amplifier. Both the BJT and FET bias conditions demonstrated
the linear, saturation, and cutoff operation modes of the devices.

QUESTIONS & HW
1. Active biasing networks are employed to compensate for the drawbacks of passive
biasing networks such as sensitivity to transistor parameters, and poor temperature
stability. Although active biasing offers advantages over passive biasing, additional space
and power requirements are introduced.

2. The gain of the class B amplifier is higher than the class A amplifier gain, but class B
suffers from crossover distortion. The gain of class AB is higher than class A but lower
than class B. Based on the ADS simulation results, the three classes of amplifiers appear
to function as high pass filters. This would imply that the gain is larger at higher
frequencies than it is at lower frequencies.
3. Three of the main amplifier types that are implemented using different bias points are
Class A, Class B, and Class AB.
In Class A operation the transistor is biased such that it operates in the linear conduction
region during the entirety of the input wave cycle (=360). This means the changes in
the amplified output are exactly proportional to the changes in the input. Class A
amplifiers are used for oscillators and LNAs.
Class B amplifiers amplify only half of the input wave cycle (=180) and create a large
amount of distortion but the efficiency is much improved relative to a Class A amplifier.
These amplifiers can be used for RF power amplifiers where increased distortion is not as
problematic.
Class AB amplifiers are a compromise between Class A and Class B. These amplifiers
are less efficient than Class B but more efficient than Class A.
4. The CS amplifier has a relatively high voltage and current gain that is negative,
indicating a 180 phase shift. The CG configuration has the same voltage gain as the CS,
except there is no negative sign. The current gain for the CG amplifier is ideally unity.
The CD amplifier, or the source follow, has a voltage gain of unity with a high current
gain.
5. See attached

CONCLUSION
The student used Agilent ADS to analyze the different bias conditions (linear, saturation, cutoff)
and six different BJT and FET amplifier configurations (CS, CG, CD, CE, CC, CB). The analysis
focused on the Mitsubishi MGF1302 FET and the Agilent HBFP0420 BJT. The different bias
conditions enabled operation of class A, class B, and class AB amplifier circuits. The student
gained experience with designing DC/AC biasing for RF amplifiers. The student also observed
the input/output impedance and the forward power gain for each of the amplifier configurations.
For future RF amplifier bias design, more diligence will be taken to ensure the transistors are
functioning in the proper mode of operation (linear, cutoff, saturation) by using the voltage and
current probe features in Agilent ADS.