BUZ 11 A

Not for new design

SIPMOS Power Transistor

N channel
Enhancement mode
Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

VDS

ID

RDS(on)

Package

Ordering Code

BUZ 11 A

50 V

26 A

0.055

TO-220 AB

C67078-S1301-A3

Maximum Ratings
Parameter

Symbol

Continuous drain current

ID

TC = 25 C

Values

Unit
A

26

IDpuls

Pulsed drain current

TC = 25 C

104

Avalanche current,limited by Tjmax

IAR

30

Avalanche energy,periodic limited by Tjmax

Avalanche energy, single pulse

EAR

1.9

mJ

EAS

ID = 30 A, VDD = 25 V, RGS = 25
L = 15.6 H, Tj = 25 C

14

Gate source voltage

VGS

Power dissipation

Ptot

TC = 25 C

20

V
W

75

Operating temperature

Tj

-55 ... + 150

Storage temperature

Tstg

-55 ... + 150

Thermal resistance, chip case

RthJC

1.67

Thermal resistance, chip to ambient

RthJA

75

DIN humidity category, DIN 40 040

K/W

IEC climatic category, DIN IEC 68-1

Semiconductor Group

55 / 150 / 56
1

07/96

BUZ 11 A

Not for new design

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Static Characteristics
Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA, Tj = 25 C

Gate threshold voltage

50

VGS(th)

VGS=VDS, ID = 1 mA
Zero gate voltage drain current

2.1

IDSS

VDS = 50 V, VGS = 0 V, Tj = 25 C

0.1

VDS = 50 V, VGS = 0 V, Tj = 125 C

10

100

Gate-source leakage current

IGSS

VGS = 20 V, VDS = 0 V
Drain-Source on-resistance

10

100

RDS(on)

VGS = 10 V, ID = 19 A

Semiconductor Group

nA

0.04

0.055

07/96

BUZ 11 A

Not for new design

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Dynamic Characteristics
Transconductance

gfs

VDS 2 * ID * RDS(on)max, ID = 19 A
Input capacitance

10

pF
-

1000

1350

450

680

165

250

Crss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

17

Ciss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

td(on)

ns

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Rise time

15

25

55

85

120

160

80

110

tr

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Turn-off delay time

td(off)

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Fall time

tf

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50

Semiconductor Group

07/96

BUZ 11 A

Not for new design

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Reverse Diode
Inverse diode continuous forward current IS

TC = 25 C
Inverse diode direct current,pulsed

104
V

1.6

1.8

trr

ns
-

80

Qrr

VR = 30 V, IF=lS, diF/dt = 100 A/s

Semiconductor Group

26

VR = 30 V, IF=lS, diF/dt = 100 A/s

Reverse recovery charge

VSD

VGS = 0 V, IF = 60 A
Reverse recovery time

ISM

TC = 25 C
Inverse diode forward voltage

C
-

0.1

07/96

BUZ 11 A

Not for new design

Drain current
ID = (TC)
parameter: VGS 10 V

Power dissipation
Ptot = (TC)

28

80

A
W

Ptot

24

ID
60

22
20
18

50

16
14

40

12
30

10
8

20

6
4

10

2
0

0
0

20

40

60

80

100

120

160

20

40

60

80

100

120

TC

Safe operating area

ID = (VDS)
parameter: D = 0.01, TC = 25C

160

TC

Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T
10 1

10 3

K/W
A

ID

ZthJC

10 0

t = 7.5s
p
10 s

10 2

/ID
=

VD

100 s

)
on
S(
D
R

10 -1

1 ms

D = 0.50
0.20

10

0.10
10 ms

0.05

10 -2

0.02
0.01
single pulse
10

DC

10

10

V 10

10

10

VDS

Semiconductor Group

-3
-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

s 10

tp

07/96

BUZ 11 A

Not for new design

Typ. output characteristics

ID = (VDS)
parameter: tp = 80 s
60

Typ. drain-source on-resistance

RDS (on) = (ID)
parameter: VGS
0.17

Ptot = 75W

kj

VGS [V]
a
4.0

50

ID

45
40
e

35
30

4.5

5.0

5.5

6.0

6.5

7.0

d h

25
20

15

8.0

9.0

10.0

20.0

0.14
RDS (on)
0.12
0.10

0.08

7.5

0.06

h
j
k

0.04

g
i

10

0.02
5

VGS [V] =
a
4.0
4.5

b
5.0

c
5.5

d
6.0

e
f
6.5 7.0

g
7.5

h
i
j
k
8.0 9.0 10.0 20.0

0.00

0.0

1.0

2.0

3.0

4.0

6.0

10

20

30

40

VDS

Typ. transfer characteristics ID = f (VGS)

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s
VDS2 x ID x RDS(on)max

parameter: tp = 80 s,
VDS2 x ID x RDS(on)max

ID

65

26

55

22

gfs

50

20

45

18

40

16

35

14

30

12

25

10

20

15

10

0
0

55

ID

0
1

10

VGS

Semiconductor Group

10

20

30

40

A
ID

07/96

60

BUZ 11 A

Not for new design

Gate threshold voltage

VGS (th) = (Tj)
parameter: VGS = VDS, ID = 1 mA

Drain-source on-resistance
RDS (on) = (Tj )
parameter: ID = 19 A, VGS = 10 V

4.6

0.18

98%

4.0

VGS(th)

RDS (on)
0.14

3.6

typ

3.2
0.12
2.8
0.10

2.4

0.08

98%

0.06

typ

2%

2.0
1.6
1.2

0.04
0.8
0.02

0.4

0.00

0.0

-60

-20

20

60

100

-60

160

-20

20

60

100

Tj

Typ. capacitances

160

Tj

Forward characteristics of reverse diode

IF = (VSD)
parameter: Tj , tp = 80 s

C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1

10 3

nF

IF
10 0

10 2

Ciss
Coss

Crss

10 -1

10 1

Tj = 25 C typ
Tj = 150 C typ
Tj = 25 C (98%)
Tj = 150 C (98%)
10 -2
0

10

Semiconductor Group

15

20

25

30

V
VDS

40

10 0
0.0

0.4

0.8

1.2

1.6

2.0

2.4

VSD

07/96

3.0

BUZ 11 A

Not for new design

Avalanche energy EAS = (Tj )
parameter: ID = 30 A, VDD = 25 V
RGS = 25 , L = 15.6 H

Typ. gate charge

VGS = (QGate)
parameter: ID puls = 56 A
16

15
mJ

EAS

12

VGS

11

12

10

0,2 VDS max

10

9
8

0,8 VDS max

7
6

5
4

3
2

1
0
20

0
40

60

80

100

120

160

Tj

10

15

20

25

30

35

40

nC

Q Gate

Drain-source breakdown voltage

V(BR)DSS = (Tj )

60
V

V(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60

-20

20

60

100

160

Tj

Semiconductor Group

07/96

50

BUZ 11 A

Not for new design

Package Outlines
TO-220 AB
Dimension in mm

Semiconductor Group

07/96