PSMN1R3 30yl

PSMN1R3-30YL
N-channel 30 V 1.3 m logic level MOSFET in LFPAK

Rev. 02 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits

Advanced TrenchMOS provides low
RDSon and low gate charge
Improved mechanical and thermal

characteristics
High efficiency gains in switching

power convertors
LFPAK provides maximum power

density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Motor control
Lithium-ion battery protection
Server power supplies
Load switching
1.4 Quick reference data

Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
30
100
121
-55
150
VGS = 10 V; Tj(init) = 25 C;
ID = 100 A; Vsup 30 V;
RGS = 50 ; unclamped
383
mJ
VGS = 4.5 V; ID = 25 A;
VDS = 12 V; see Figure 13;
see Figure 14
9.3
nC
46.6
nC
VDS
drain-source voltage Tj 25 C; Tj 150 C
ID
drain current
Tmb = 25 C; VGS = 10 V;
see Figure 1;
Ptot
total power
dissipation
Tmb = 25 C; see Figure 2
Tj
junction temperature
[1]
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
PSMN1R3-30YL
NXP Semiconductors
Table 1.
Quick reference continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; ID = 15 A;
Tj = 100 C; see Figure 12
1.8
VGS = 10 V; ID = 15 A;
1.04
1.3
Static characteristics
RDSon
[1]
drain-source
on-state resistance
Continuous current is limited by package.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
source
source
source
gate
mb
mounting base; connected to

drain
Graphic symbol
D
G
mbb076
SOT1023
(LFPAK2)
3. Ordering information
Table 3.
Ordering information
Type number
PSMN1R3-30YL
Package
Name
Description
Version
LFPAK2
Plastic single-ende surface-mounted package (LFPAK2); 4 leads
SOT1023
PSMN1R3-30YL_2
Product data sheet
NXP B.V. 2009. All rights reserved.
Rev. 02 25 June 2009
2 of 14
PSMN1R3-30YL
NXP Semiconductors
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj 25 C; Tj 150 C
30
VDGR
drain-gate voltage
Tj 25 C; Tj 150 C; RGS = 20 k
VGS
gate-source voltage
ID
drain current
30
-20
20
VGS = 10 V; Tmb = 100 C; see Figure 1
[1]
100
VGS = 10 V; Tmb = 25 C; see Figure 1
[1]
100
IDM
peak drain current
tp 10 s; pulsed; Tmb = 25 C; see Figure 3
923
Ptot
total power dissipation
Tmb = 25 C; see Figure 2
121
Tstg
storage temperature
-55
150
Tj
-55
150
Tsld(M)
peak soldering
temperature
260
100
923
383
mJ
Source-drain diode
IS
source current
Tmb = 25 C;
[1]
ISM
peak source current
tp 10 s; pulsed; Tmb = 25 C
Avalanche ruggedness
non-repetitive
VGS = 10 V; Tj(init) = 25 C; ID = 100 A; Vsup 30 V;
drain-source avalanche RGS = 50 ; unclamped
energy
EDS(AL)S
[1]
Continuous current is limited by package.
003aad141
250
ID
(A)
200
03aa15
120
Pder
(%)
80
150
100
40
50
Fig 1.
50
100
150
200
Tmb (C)
Normalized continuous drain currnet as a

function of mounting base temperature
100
150
200
Tmb (C)
Fig 2.
Normalized total power dissipation as a

function of mounting base temperature
PSMN1R3-30YL_2
Product data sheet
50
Rev. 02 25 June 2009
3 of 14
PSMN1R3-30YL
NXP Semiconductors
003aad145
104
ID
(A)
103
Limit RDSon = VDS / ID

tp = 10 us
10
100 us
DC
10
1 ms
10 ms
100 ms
10-1
10-1
Fig 3.
10
102
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
4 of 14
PSMN1R3-30YL
NXP Semiconductors
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to

mounting base
see Figure 4
0.4
1.03
K/W
003aad142
1
Zth (j-mb)
(K/W)
10
= 0.5
-1
0.2
0.1
0.05
10-2
0.02
=
10-3
tp
T
single shot
t
tp
T
10-4
10-6
Fig 4.
10-5
10-4
10-3
10-2
10-1
tp (s)
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
5 of 14
PSMN1R3-30YL
NXP Semiconductors
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
IGSS
RDSon
RG
drain-source
breakdown voltage
ID = 250 A; VGS = 0 V; Tj = 25 C
30
ID = 250 A; VGS = 0 V; Tj = -55 C
27
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 C;

see Figure 10; see Figure 11
1.3
1.7
2.15
ID = 1 mA; VDS = VGS; Tj = 150 C;

see Figure 10
0.65
ID = 1 mA; VDS = VGS; Tj = -55 C;

see Figure 10
2.45
VDS = 30 V; VGS = 0 V; Tj = 25 C
VDS = 30 V; VGS = 0 V; Tj = 150 C
100
VGS = 15 V; VDS = 0 V; Tj = 25 C
100
nA
VGS = -15 V; VDS = 0 V; Tj = 25 C
100
nA
VGS = 4.5 V; ID = 15 A; Tj = 25 C;
see Figure 17
1.43
1.95
VGS = 10 V; ID = 15 A; Tj = 100 C;
see Figure 12
1.8
VGS = 10 V; ID = 15 A; Tj = 150 C;
see Figure 12
1.9
2.8
VGS = 10 V; ID = 15 A; Tj = 25 C;
see Figure 17
1.04
1.3
f = 1 MHz
0.89
ID = 25 A; VDS = 12 V; VGS = 10 V;
100
nC
drain leakage current

gate leakage current
drain-source on-state
resistance
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
90
nC
ID = 25 A; VDS = 12 V; VGS = 4.5 V;

46.6
nC
QGS
gate-source charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;

17.9
nC
QGS(th)
pre-threshold
gate-source charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;

see Figure 13
11
nC
QGS(th-pl)
post-threshold
gate-source charge
6.9
nC
QGD
gate-drain charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;

9.3
nC
VGS(pl)
gate-source plateau
voltage
VDS = 12 V; see Figure 13; see Figure 14
2.53
Ciss
input capacitance
6227
pF
Coss
output capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;

1415
pF
Crss
reverse transfer
capacitance
619
pF
PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
6 of 14
PSMN1R3-30YL
NXP Semiconductors
Table 6.
Characteristics continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
td(on)
turn-on delay time
64
ns
tr
rise time
VDS = 12 V; RL = 0.5 ; VGS = 4.5 V;

RG(ext) = 5.6
108
ns
td(off)
turn-off delay time
106
ns
tf
fall time
52
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 C;
see Figure 16
0.88
1.2
trr
reverse recovery time
46
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V;

VDS = 20 V
53
nC
003aad147
8
RDS(on)
(m)
003aad152
104
Ciss
C
(pF)
Crss
4
0
0
Fig 5.
10
15
VGS (V)
20
Drain-source on-state resistance as a function

of gate-source voltage; typical values.
103
10-1
Fig 6.
VGS (V)
10
Input and reverse transfer capacitances as a

function of gate-source voltage; typical values
PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
7 of 14
PSMN1R3-30YL
NXP Semiconductors
003aad153
200
003aad144
100
ID
(A)
gfs
(S)
80
VGS (V) = 2.8
3.5
150
2.6
10
60
100
40
2.4
50
20
2.2
0
0
0
Fig 7.
25
50
75
ID (A)
Forward transconductance as a function of

drain current; typical values
003aad148
100
100
ID
(A)
Fig 8.
VDS (V)
Output characteristics: drain current as a

function of drain-source voltage; typical values
003aab272
3
VGS(th)
(V)
75
max
2
typ
1.5
50
min
1
Tj = 150 C
25
25 C
0.5
0
0
Fig 9.
VGS (V)
0
-60
60
120
180
Tj (C)
Transfer characteristics: drain current as a

function of gate-source voltage; typical
valuesvalues
Fig 10. Gate-source threshold voltage as a function of

PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
8 of 14
PSMN1R3-30YL
NXP Semiconductors
003aab271
10-1
ID
(A)
10-2
03aa27
2
a
1.5
min
typ
max
10-3
1
10
-4
0.5
10-5
10-6
0
VGS (V)
Fig 11. Sub-threshold drain current as a function of

gate-source voltage
0
60
60
120
180
Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature
003aad150
10
VDS
Tj (C)
VGS
(V)
ID
VGS(pl)
VDS = 12V
VGS(th)
VGS
4
QGS1
QGS2
QGS
QGD
QG(tot)
2
003aaa508
Fig 13. Gate charge waveform definitions
0
0
25
50
75
100
QG (nC)
Fig 14. Gate-source voltage as a function of gate

charge; typical values
PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
9 of 14
PSMN1R3-30YL
NXP Semiconductors
003aad151
104
003aad149
100
IS
(A)
Ciss
C
(pF)
75
Coss
103
50
Crss
Tj = 150 C
25
102
10-1
10
VDS (V)
25 C
102
Fig 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values
0.25
0.5
0.75
VSD (V)
Fig 16. Source current as a function of source-drain

voltage; typical values
003aad146
10
VGS (V) = 2.6
RDS(on)
(m)
7.5
2.8
2.5
3.5
4.5
10
0
0
25
50
75
ID (A)
100
Fig 17. Drain-source on-state resistance as a function of drain current; typical values
PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
10 of 14
PSMN1R3-30YL
NXP Semiconductors
7. Package outline
Plastic single-ended surface-mounted package (LFPAK2); 4 leads
SOT1023
E1
b1
b2
(3)
c1
mounting
base
D1
D
H
L
1
4
b
A1
X
w
Lp
detail X
2.5
mm
5 mm
scale
Dimensions
Unit
y C
A1
b1
b2
c1
D(1) D1(1) E(1) E1(1)
max 1.10 0.15 0.50 4.41

0.25 0.30 4.70 4.45 5.30
0.85
nom
min 0.95 0.00 0.35 3.62
0.19 0.24 4.45
4.95
3.7
Lp
6.2
1.3
0.85
1.27
3.5
5.9
0.8
0.25
0.1
0.40
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
Outline
version
JEDEC
0
sot1023_po
References
IEC
JEITA
European
projection
Issue date
08-10-13
09-05-26
SOT1023
Fig 18. Package outline SOT1023; Package outline

PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
11 of 14
PSMN1R3-30YL
NXP Semiconductors
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN1R3-30YL_2
20090625
Product data sheet
PSMN2R3-30YL_1
Modifications:
PSMN1R3-30YL_1
Status changed from objective to product.

Various changes to content.
20090528
Objective data sheet
PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
12 of 14
PSMN1R3-30YL
NXP Semiconductors
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customers own risk.
Applications Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS is a trademark of NXP B.V.
10. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN1R3-30YL_2
Product data sheet
Rev. 02 25 June 2009
13 of 14
PSMN1R3-30YL
NXP Semiconductors
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.
NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 June 2009
Document identifier: PSMN1R3-30YL_2

PSMN1R3 30yl

Caricato da

Informazioni sul documento

Titolo originale

Copyright

Formati disponibili

Condividi questo documento

Condividi o incorpora il documento

Opzioni di condivisione

Hai trovato utile questo documento?

Questo contenuto è inappropriato?

Copyright:

Formati disponibili

PSMN1R3 30yl

Caricato da

Copyright:

Formati disponibili

PSMN1R3-30YL

N-channel 30 V 1.3 m logic level MOSFET in LFPAK

Product data sheet

1.2 Features and benefits

Improved mechanical and thermal

High efficiency gains in switching

LFPAK provides maximum power

Lithium-ion battery protection

Server power supplies

1.4 Quick reference data

drain-source voltage Tj 25 C; Tj 150 C

Tmb = 25 C; see Figure 2

total gate charge

N-channel 30 V 1.3 m logic level MOSFET in LFPAK

Quick reference continued

Continuous current is limited by package.

mounting base; connected to

Plastic single-ende surface-mounted package (LFPAK2); 4 leads

Product data sheet

NXP B.V. 2009. All rights reserved.

Rev. 02 25 June 2009

N-channel 30 V 1.3 m logic level MOSFET in LFPAK

In accordance with the Absolute Maximum Rating System (IEC 60134).

VGS = 10 V; Tmb = 100 C; see Figure 1

VGS = 10 V; Tmb = 25 C; see Figure 1

peak drain current

tp 10 s; pulsed; Tmb = 25 C; see Figure 3

total power dissipation

Tmb = 25 C; see Figure 2

peak source current

Continuous current is limited by package.

Normalized continuous drain currnet as a

Normalized total power dissipation as a

Product data sheet

NXP B.V. 2009. All rights reserved.

Rev. 02 25 June 2009

N-channel 30 V 1.3 m logic level MOSFET in LFPAK

Limit RDSon = VDS / ID

Product data sheet

NXP B.V. 2009. All rights reserved.

Rev. 02 25 June 2009

N-channel 30 V 1.3 m logic level MOSFET in LFPAK

thermal resistance from junction to

Product data sheet

NXP B.V. 2009. All rights reserved.

Rev. 02 25 June 2009

N-channel 30 V 1.3 m logic level MOSFET in LFPAK

ID = 250 A; VGS = 0 V; Tj = -55 C

ID = 1 mA; VDS = VGS; Tj = 25 C;

ID = 1 mA; VDS = VGS; Tj = 150 C;

ID = 1 mA; VDS = VGS; Tj = -55 C;

VDS = 30 V; VGS = 0 V; Tj = 150 C

VGS = -15 V; VDS = 0 V; Tj = 25 C

drain leakage current

total gate charge

ID = 25 A; VDS = 12 V; VGS = 4.5 V;

ID = 25 A; VDS = 12 V; VGS = 4.5 V;

ID = 25 A; VDS = 12 V; VGS = 4.5 V;

ID = 25 A; VDS = 12 V; VGS = 4.5 V;

VDS = 12 V; see Figure 13; see Figure 14

VDS = 12 V; VGS = 0 V; f = 1 MHz;

Product data sheet

NXP B.V. 2009. All rights reserved.