K817P/ K827PH/ K847PH

Vishay Semiconductors

Optocoupler, Phototransistor Output

Features

Endstackable to 2.54 mm (0.1") spacing

DC isolation test voltage VISO = 5000 VRMS
Low coupling capacitance of typical 0.3 pF
Current Transfer Ratio (CTR) selected into groups
Low temperature coefficient of CTR
Wide ambient temperature range
Available in single, dual and quad channel packages
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

1
A
C
4 PIN

Agency Approvals
UL1577, File No. E76222 System Code U, Double
Protection
CSA 93751

Applications
Programmable logic controllers, modems, answering
machines, general applications

Description
In the K817P/ K827PH/ K847PH parts each channel
consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin (single); 8 pin (dual); 16-pin (quad) plastic dual inline
package.
The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

Document Number 83522

Rev. 1.7, 26-Oct-04

8 PIN
16 PIN

17203_1

e3

Pb
Pb-free

Order Information
Part

Remarks

K817P

CTR 50 - 600 %, DIP-4

K817P1

CTR 40 - 80 %, DIP-4

K817P2

CTR 63 - 125 %, DIP-4

K817P3

CTR 100 - 200 %, DIP-4

K817P4

CTR 160 - 320 %, DIP-4

K817P5

CTR 50 - 150 %, DIP-4

K817P6

CTR 100 - 300 %, DIP-4

K817P7

CTR 80 - 160 %, DIP-4

K817P8

CTR 130 - 260 %, DIP-4

K817P9

CTR 200 - 400 %, DIP-4

K827PH

CTR 50 - 600 %, DIP-8

K847PH

CTR 50 - 600 %, DIP-16

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K817P/ K827PH/ K847PH

Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Symbol

Value

Reverse voltage

Parameter

VR

Forward current

IF

60

mA

IFSM

1.5

Pdiss

100

mW

Tj

125

Forward surge current

Test condition

tp 10 s

Power dissipation
Junction temperature

Unit

Output
Symbol

Value

Unit

Collector emitter voltage

Parameter

Test condition

VCEO

70

Emitter collector voltage

VECO

IC

50

mA

ICM

100

mA

Pdiss

150

mW

Tj

125

Collector current
Collector peak current

tp/T = 0.5, tp 10 ms

Power dissipation
Junction temperature

Coupler
Parameter
AC isolation test voltage (RMS)

Test condition
t = 1 min

Symbol

Value

Unit

1)

5000

VRMS

VISO

Total power dissipation

Ptot

250

mW

Operating ambient temperature

range

Tamb

- 40 to + 100

Storage temperature range

Tstg

- 55 to + 125

Tsld

260

Soldering temperature
1)

2 mm from case, t 10 s

Related to standard climate 23/50 DIN 50014

Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Typ.

Max

Unit

Forward voltage

Parameter

IF = 50 mA

VF

1.25

1.6

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

50

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2

Test condition

Symbol

Min

pF

Document Number 83522

Rev. 1.7, 26-Oct-04

K817P/ K827PH/ K847PH

Vishay Semiconductors
Output
Symbol

Min

Collector emitter voltage

Parameter

IC = 100 A

Test condition

VCEO

70

Typ.

Max

Unit
V

Emitter collector voltage

IE = 100 A

VECO

Collector dark current

VCE = 20 V, IF = 0, E = 0

ICEO

100

nA

Max

Unit

0.3

Coupler
Parameter

Test condition

Symbol

Min

Typ.

Collector emitter saturation

voltage

IF = 10 mA, IC = 1 mA

VCEsat

Cut-off frequency

IF = 10 mA, VCE = 5 V,
RL = 100

fc

100

kHz

Coupling capacitance

f = 1 MHz

Ck

0.3

pF

Current Transfer Ratio

Parameter
IC/IF

Test condition
VCE = 5 V, IF = 5 mA

VCE = 5 V, IF = 10 mA

VCE = 5 V, IF = 5 mA

Document Number 83522

Rev. 1.7, 26-Oct-04

Part

Symbol

Min

Max

Unit

K817P

CTR

50

Typ.

600

K827PH

CTR

50

600

K847PH

CTR

50

600

K817P1

CTR

40

80

K817P2

CTR

63

125

K817P3

CTR

100

200

K817P4

CTR

160

320

K817P5

CTR

50

150

K817P6

CTR

100

300

K817P7

CTR

80

160

K817P8

CTR

130

260

K817P9

CTR

200

400

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K817P/ K827PH/ K847PH

Vishay Semiconductors
Switching Characteristics
Test condition

Symbol

Delay time

Parameter

VS = 5 V, IC = 2 mA, RL = 100
(see figure 1)

td

Min

Typ.
3.0

Max

Rise time

VS = 5 V, IC = 2 mA, RL = 100
(see figure 1)

tr

3.0

Fall time

VS = 5 V, IC = 2 mA, RL = 100
(see figure 1)

tf

4.7

Storage time

VS = 5 V, IC = 2 mA, RL = 100
(see figure 1)

ts

0.3

Turn-on time

VS = 5 V, IC = 2 mA, RL = 100
(see figure 1)

ton

6.0

Turn-off time

VS = 5 V, IC = 2 mA, RL = 100
(see figure 1)

toff

5.0

Turn-on time

VS = 5 V, IF = 10 mA, RL = 1 k
(see figure 2)

ton

9.0

Turn-off time

VS = 5 V, IF = 10 mA, RL = 1 k
(see figure 2)

toff

18.0

IF
0

IF

+5V

IF

IC = 2 mA; adjusted through

input amplitude

RG = 50 W
tp
= 0.01
T
tp = 50 Ps

Channel I
Channel II
50 W

100 W

Oscilloscope
RL = 1 MW
CL = 20 pF

Figure 1. Test circuit, non-saturated operation

IF

IF = 10 mA

96 11698

0
IC

tp

100%
90%

10%
0

tp
td
tr
ton (= td + tr)

95 10804

Unit

tr
td
ton

ts

pulse duration
delay time
rise time
turn-on time

ts
tf
toff (= ts + tf)

tf
toff

storage time
fall time
turn-off time

Figure 3. Switching Times

+5V
IC

RG = 50
tp
= 0.01
T
tp = 50 s

Channel I
Channel II
50

1 k

Oscilloscope
RL 1M
CL 20 pF

95 10843

Figure 2. Test circuit, saturated operation

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Document Number 83522

Rev. 1.7, 26-Oct-04

K817P/ K827PH/ K847PH

Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
10000
I CEO - Collector Dark Current,
with open Base ( nA )

P tot Total Power Dissipation ( mW)

300
Coupled device
250
200
Phototransistor

150
IR-diode
100
50

V CE = 20 V
IF = 0
1000

100

10

0
0

40

80

Tamb Ambient Temperature( C )

96 11700

120

25

Figure 4. Total Power Dissipation vs. Ambient Temperature

50

100

75

Tamb - Ambient Temperature ( C )

95 11026

Figure 7. Collector Dark Current vs. Ambient Temperature

100
IC Collector Current ( mA )

I F - Forward Current ( mA )

1000

100

10

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F - Forward Voltage ( V )

10

0.1

0.01
0.1

0.1
96 11862

V CE=5V

100
20mA

V CE=5V
I F=5mA

IC Collector Current ( mA)

CTRrel Relative Current Transfer Ratio

Figure 8. Collector Current vs. Forward Current

2.0

1.5

1.0

0.5

0
25

95 11025

100

10

I F Forward Current ( mA )

95 11027

Figure 5. Forward Current vs. Forward Voltage

25

50

75

Tamb Ambient Temperature ( C )

Figure 6. Relative Current Transfer Ratio vs. Ambient

Temperature

Document Number 83522

Rev. 1.7, 26-Oct-04

I F=50mA
10mA

10

5mA
2mA

1mA
0.1
0.1

95 10985

10

100

V CE Collector Emitter Voltage ( V )

Figure 9. Collector Current vs. Collector Emitter Voltage

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K817P/ K827PH/ K847PH

1.0

ton / toff Turn on / Turn off Time ( s )

VCEsat Collector Emitter Saturation Voltage (V)

Vishay Semiconductors

20%
0.8
CTR=50%
0.6

0.4
0.2

10%

Non Saturated
Operation
V S=5V
RL=100

ton

6
toff
4
2

0
1

100

10
I C Collector Current ( mA )

95 11028

0
95 11030

Figure 10. Collector Emitter Saturation Voltage vs. Collector

Current

CTR Current Transfer Ratio ( % )

10

10

I C Collector Current ( mA )

Figure 13. Turn on / off Time vs. Collector Current

1000
V CE=5V
100

10

1
0.1

100

10

I F Forward Current ( mA )

95 11029

ton / toff Turn on / Turn off Time ( s )

Figure 11. Current Transfer Ratio vs. Forward Current

50
Saturated Operation
V S=5V
RL=1k

40

30
toff
20
10
ton

0
0

10

15

20

I F Forward Current ( mA )

95 11031

Figure 12. Turn on / off Time vs. Forward Current

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Document Number 83522

Rev. 1.7, 26-Oct-04

K817P/ K827PH/ K847PH

Vishay Semiconductors
Package Dimensions in mm

14789

Package Dimensions in mm

14784

Document Number 83522

Rev. 1.7, 26-Oct-04

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K817P/ K827PH/ K847PH

Vishay Semiconductors
Package Dimensions in mm

14783

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8

Document Number 83522

Rev. 1.7, 26-Oct-04

K817P/ K827PH/ K847PH

Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83522

Rev. 1.7, 26-Oct-04

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Legal Disclaimer Notice

Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

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