Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
I. I NTRODUCTION
Fig. 1.
(a) In0.53 Ga0.47 As Bulk FinFET with body thickness,
TBody = 40nm, In0.53 Ga0.47 As QW FinFET with TBody = 10nm, and
In0.7 Ga0.3 As QW FinFET TBody = 10nm [3]. (b) Fin cross-section along the
source-channel-drain showing n++ cap as S/D, undoped Inx Ga1x As channel
and Al2 O3 /HfO2 gate stack. (c) Effective barrier height (Eb ) seen by quantum
confined electrons depends both on strain (higher Indium percentage) and on
the extent of quantization (assuming first and second sub-band occupation).
Reduction in Eb leads to higher rate of electron injection from quantum well
into the high- gate dielectric and hence lower reliability.
0741-3106 2014 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
121
Fig. 3. Time evolution of VTh under PBTI stress of different stress voltage,
Vg,str and temperature, T for (a) In0.53 Ga0.47 As Bulk, (b) In0.53 Ga0.47 As
QW, and (c) In0.7 Ga0.3 As QW FinFET devices, respectively. Using power
law fitting based on eq.(1), the time exponent (n) of each curve is extracted.
The value of n for In0.53 Ga0.47 As Bulk architecture is the lowest.
the threshold voltage, VTh , of the devices. Fig. 3 plots the time
evolution of the threshold voltage shift, VTh , under PBTI
stress for different stress voltages, Vg,str , and temperatures, T,
for the three FinFET architectures. Eq. (1) below shows the
VTh dependence on stress time, t, stress voltage, Vg,str and
temperature, T where A, n, and EA are the prefactor, the time
exponent, the voltage acceleration factor, and the activation
energy, respectively.
EA
)
(1)
kT
Lines in fig. 3 are mathematical fits with power law dependence giving the prefactor, A, and time exponent, n, at a
particular Vg,str and T. The values of A are 0.118, 0.134,
0.159 and n are 0.12, 0.14, 0.18 for In0.53Ga0.47 As Bulk,
In0.53Ga0.47 As QW, and In0.7 Ga0.3 As QW at Vg,str of 1.5V
and T = 125 C, respectively. Highest prefactor, A, and time
exponent, n, of In0.7 Ga0.3 As QW FinFET among the three
devices indicates lower PBTI reliability lifetime. In the next
section, we discuss the PBTI results and compare the extracted
acceleration factors for the three architectures.
ex p(
VTh = A t n Vg,str
122
Fig. 4. Plot of gm /gm0 with respect to VTh for Vg,str = 1.0V at 125 C.
Fig. 6.
Extrapolated times to 60mV VTh (solid) at 85 C operating
temperature show that In0.7 Ga0.3 As QW FinFET needs to operate at 0.1V of
overdrive for 10 years of lifetime operation. The dashed lines are extrapolation
of time to failure (TTF) at a more stringent VTh of 30mV.