Experiment # 11

MOSFET Vs. BJT

11.1 Objective:
To compering the Different properties of the MOSFET and BJTS

11.2 Apparatus:
Signal generator, Potentiometer, power supply, wires and circuit trainer, voltmeter and
ammeter, gain switches, CRO, voltage amplifier.

11.3 Introduction:
The metaloxidesemiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET)
is a type of transistor used for amplifying or switching electronic signals.
Although the MOSFET is a four-terminal device with source (S), gate (G), drain (D), and
body (B) terminals, the body (or substrate) of the MOSFET is often connected to the source
terminal, making it a three-terminal device like other field-effect transistors. Because these
two terminals are normally connected to each other (short-circuited) internally, only three
terminals appear in electrical diagrams.
A bipolar junction transistor (bipolar transistor or BJT) is a type of transistor that uses
both electron and hole charge carriers. In contrast, unipolar transistors, such as field-effect
transistors, only use one kind of charge carrier. For their operation, BJTs use two junctions
between two semiconductor types, n-type and p-type.
BJTs are manufactured in two types, NPN and PNP, and are available as individual
components, or fabricated in integrated circuits, often in large numbers. The basic function of
a BJT is to amplify current. This allows BJTs to be used as amplifiers or switches, giving
them wide applicability in electronic equipment, including computers, televisions, mobile
phones, audio amplifiers, industrial control, and radio transmitters [1].

11.4 History:
The basic principle of this kind of transistor was first patented by Julius
Edgar Lilienfeld in 1925.Twenty five years later, when Bell Telephone attempted to patent the
junction transistor, they found Lilienfeld already holding a patent, worded in a way that
would include all types of transistors. Bell Labs was able to work out an agreement with
Lilienfeld, who was still alive at that time (it is not known if they paid him money or not).It
was at that time the Bell Labs version was given the name bipolar junction transistor, or
simply junction transistor, and Lilienfeld's design took the name field effect transistor.
In 1959, Dawon Kahng and Martin M. (John) Atalla at Bell Labs invented the metaloxide
semiconductor field-effect transistor (MOSFET) as an offshoot to the patented FET
design. Operationally and structurally different from the bipolar junction transistor, the

MOSFET was made by putting an insulating layer on the surface of the semiconductor and
then placing a metallic gate electrode on that.
The bipolar point-contact transistor was invented in December 1947[10] at the Bell Telephone
Laboratories by John Bardeen and Walter Brattain under the direction of William Shockley.
The junction version known as the bipolar junction transistor (BJT), invented by Shockley in
1948, [11] was for three decades the device of choice in the design of discrete and integrated
circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the
design of digital integrated circuits. The incidental low performance BJTs inherent in CMOS
ICs, however, are often utilized as band gap voltage reference, silicon band gap temperature
sensor and to handle electrostatic discharge [2].

11.5 Block Diagram:

Fig 11.1 (Block Diagram of MOSFET)

Fig 11.2 (Block Diagram of BJT)

10.6 MOSFET and BJT Characteristics cure:

.

11.3(fig show characteristics cures)

11.7 MOSFETs and BJTs:

11.8 Circuit Diagram:

Fig 11.4(Circuit diagram)

11.9 Procedure:
Take the apparatus from the lab.
Make the positive (+12) and negative (-12 V) at the module power supply
Take the trainer of power electronics devices experiment.
Make the connection between the sockets 7.3and 3.1 on trainer
Make the connection between the sockets 3.3and 3.4 on trainer
Make the connection between the sockets11.3and 11.4 on trainer
Make the connection of signal generator between the sockets 11.3and 11.4 on trainer
Make the connection of signal generator and voltage amplifier between the sockets 7.2 on
the experiment trainer
Make the connection between the sockets 3.6 and 11.2 on trainer
Signal generator is fixed to produce a signal of 1k frequency and full amplitude.
Make the setting CRO according to experiment.
Make the connection between the CRO and Signal generator input voltage.
Make the connection between the voltage amplifier and CRO.
The off-set point and gain of the amplifier set at mid-point.
Switch ON the module power supply
changed the value of the gain and decrease the distortion in voltage wave form.
calculated the out-put voltage
changed the setting of CRO and functional generator and repeated the experiment.

 Calculated the Gain

g=

Ic
Ib

Plot the Graph between input voltage and output voltage.

11.10 Observation and Calculation:

11.10.1 Power MOSFET gain formula:
Gm=

Rd
RS

11.11 Conclusion:

In practical situation MOSFET acts as a resistor during conduction, whereas BJT acts as a
voltage source during conduction. When we calculate power loss in both the devices we
would get more power loss in MOSFET than BJT.

But MOSFET has its own advantage where its switching time is less than BJT, i.e.
switching loss is less for a particular frequency in MOSFET compared Butts.

A Switch tutorial, as well as being used as an amplifier, the bipolar junction transistor,
(BJT) can be made to operate as an ON-OFF switch