AO4620

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AO4620 uses advanced trench technology

MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
in inverter and other applications.

n-channel
VDS (V) = 30V
ID = 7.2A (VGS=10V)
RDS(ON)
< 24m (VGS=10V)
< 36m (VGS=4.5V)

p-channel
-30V
-5.3A (VGS = -10V)
RDS(ON)
< 32m (VGS = -10V)
< 55m (VGS = -4.5V)

100% UIS tested

100% Rg tested

SOIC-8
Top View

Bottom View
Top View
S2
G2
S1
G1

1
2
3
4

D2

8
7
6
5

D1

D2
D2
D1
D1
G2

G1
S2

Pin1

n-channel

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage

VGS
TA=25C

Continuous Drain
Current F

TA=70C

Pulsed Drain Current

TA=25C
Power Dissipation
Avalanche Current

F
B

Junction and Storage Temperature Range

20

20

Units
V
V

-5.3

6.2

-4.5

IDM

64

-40

1.44

1.44

17

12

43

mJ

-55 to 150

-55 to 150

EAR
TJ, TSTG

Thermal Characteristics: n-channel and p-channel

Parameter
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
A
t 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C

Alpha & Omega Semiconductor, Ltd.

Max p-channel
-30

7.2

IAR
B

p-channel

ID

PD

TA=70C

Repetitive avalanche energy 0.3mH

S1

Symbol
RJA
RJL
RJA
RJL

Device
n-ch
n-ch
n-ch

Typ
50
80
32

Max
62.5
100
40

Units
C/W
C/W
C/W

p-ch
p-ch
p-ch

50
80
32

62.5
100
40

C/W
C/W
C/W

www.aosmd.com

AO4620

N-CHANNEL Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

Conditions

Min

ID=250A, VGS=0V

Typ

Max

Units

30

V
1

VDS=30V, VGS=0V
TJ=55C

VDS=0V, VGS= 20V

100

nA

2.6

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=250A

1.5

ID(ON)

On state drain current

VGS=10V, VDS=5V

64

RDS(ON)

Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

2.5

ISM

Pulsed Body-Diode CurrentB

64

448

pF

VGS=10V, ID=7.2A

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

A
17.7

24

25

32

VGS=4.5V, ID=5A

24.8

36

VDS=5V, ID=7.2A

20

TJ=125C

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

2.1

0.74

373
VGS=0V, VDS=15V, f=1MHz

m
S

67

pF

41

pF

1.8

2.8

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

7.2

11

Qg(4.5V) Total Gate Charge

3.5

nC

1.3

nC

1.7

nC

4.5

ns

2.7

ns

14.9

ns

2.9

ns

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=15V, ID=7.2A

VGS=10V, VDS=15V, RL=2.1,

RGEN=3

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

IF=7.2A, dI/dt=100A/s

10.5

Qrr

Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/s

4.5

Body Diode Reverse Recovery Time

12.6

nC

ns
nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t 10s thermal resistance rating.
Rev 8: May 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4620

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

15
5V

10V

VDS=5V

6V

50

12

40

6V

4.5V
ID(A)

ID (A)

VDS=5V

30

6
20

VGS=3.5V

10
0

25

0
0

1.5

VDS (Volts)
Fig 1: On-Region Characteristics

2.5

3.5

4.5

VGS(Volts)
Figure 2: Transfer Characteristics

45
Normalized On-Resistance

1.8

40

VGS=4.5V

35
RDS(ON) (m
)

25C

125C 125C
3

VGS=4.5V
30
25
VGS=10V
VGS=10V

20
15
10

1.6

VGS=10V
Id=7.7A

1.4
1.2
1

VGS=4.5V
Id=5A

0.8
0.6

10

15

20

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

60

1.0E+01
ID=7.2A ID=7.7A
1.0E+00
1.0E-01

40
125C

125

IS (A)

RDS(ON) (m
)

50

125C

1.0E-02
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY
LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4620

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

600

10
VDSV=15V
DS=15V
ID=7.2A
ID=7.7A

500
Capacitance (pF)

VGS (Volts)

8
6
4
2

Ciss

400
300
Coss

200

Coss
100

Crss
Crss

0
0

4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics

100.0

10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30
10s

1.0

1ms
10ms
TJ(Max)=150C
TA=25C

Power (W)

ID (Amps)

100s

0.1

TJ(Max)=150C
TA=25C

25

RDS(ON)
limited

10.0

20
15
10

0.1s

DC

10s

0.0
0.01

0.1

1
VDS (Volts)

10

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10
Z JA Normalized Transient
Thermal Resistance

30

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=100C/W

100

0.001

0.01

0.1

1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
0.01
0.00001

0.0001

0.001

0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000

AO4620

P-CHANNEL Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

Conditions

Min

ID=-250A, VGS=0V

-30

Typ

Max

Units
V

-1

VDS=-30V, VGS=0V
TJ=55C

-5

VDS=0V, VGS=20V

100

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.3

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-40

RDS(ON)

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-4.5A

33

gFS

Forward Transconductance

VDS=-5V, ID=-5.3A

19

IS=-1A,VGS=0V

VGS=-10V, ID=-5.3A

-1.85

nA
V
A

23
TJ=125C

-2.4

32

31.5

m
S

VSD

Diode Forward Voltage

-1

IS

Maximum Body-Diode Continuous Current

-3.5

ISM

Pulsed Body-Diode CurrentB

-40

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-15V, f=1MHz

-0.8

55

760

pF

140

pF

95

pF

3.2

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)

13.6

16

nC

Qg(4.5V) Total Gate Charge (4.5V)

6.7

nC

2.5

nC

3.2

nC

ns

ns

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

Qrr

VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-15V, ID=-5.3A

VGS=-10V, VDS=-15V, RL=2.8,

RGEN=3

17

ns

ns

IF=-5.3A, dI/dt=100A/s

15

Body Diode Reverse Recovery Charge IF=-5.3A, dI/dt=100A/s

9.7

ns
nC

Body Diode Reverse Recovery Time

1in 2

A: The value of R JA is measured with the device mounted on

FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25C. The SOA curve provides a single pulse rating.
F.The current rating is based on the t 10s thermal resistance rating.
Rev8: May 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4620

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40

30
-10V

35

-6V

-5V

VDS=-5V

-4.5V
25

30
-4V

20
-ID(A)

-ID (A)

25
20
15

-3.5V

15
10
125C

10

25C

VGS=-3V

5
0

0
0

-VDS (Volts)
Fig 1: On-Region Characteristics

RDS(ON) (m
)

Normalized On-Resistance

VGS=-4.5V

35
30
25
VGS=-10V

20

VGS=-10V

15
10

3.5

4.5

VGS=-10V
ID=-5.3A

1.6

ID=-4.5A
1.4
ID=-5.6A
VGS=-4.5V
ID=-4.5A

1.2
1
0.8

10

15

20

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

80

1.0E+02
ID=-5.6A
ID=-5.3A

60

1.0E+01

125C

1.0E+00

125C

-IS (A)

RDS(ON) (m
)

2.5

1.8

45
40

-VGS(Volts)
Figure 2: Transfer Characteristics

VGS=-4.5V

50

1.5

40
25C
20

125C

25C

1.0E-01
1.0E-02
1.0E-03

25C
1.0E-04
1.0E-05

0
2

10

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

-VSD (Volts)
Figure 6: Body-Diode Characteristics

1.2

AO4620

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1200

10
VDS=-15V
ID=-5.3A

1000
Ciss
Capacitance (pF)

-VGS (Volts)

800
600
400
Coss

200
Crss

0
0

6
8
10
12
Qg (nC)
Figure 7: Gate-Charge Characteristics

14

10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics

30

100.0
30

10s

RDS(ON)
limited

0.1s

1ms

1.0
10s

10ms

Power (W)

ID (Amps)

25

100s

10.0

TJ(Max)=150C
TA=25C

20
15
10

DC

0.1

TJ(Max)=150C
TA=25C

0.0

0.001
0.01

0.1

1
10
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)

100

0.01

0.1

10

100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Z JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=100C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD
0.1
Ton

Single Pulse
0.01
0.00001

0.0001

0.001
0.01 Pulse Width
0.1 (s)
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

100

1000