N-D92-02

SEMICONDUCTOR

RoHS
RoHS

Nell High Power Products

FRED
Ultrafast Soft Recovery Diode, 2 x 10 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low l RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level

BENEFITS
Reduced RFI and EMI
Reduced power loss in diode
and switching transistor.
Higher frequency operation
Reduced snubbing
Reduced parts count

TO-3PB

common
cathode
2

APPLICATIONS
Switching mode power supplies
UPS
DC/DC converters
Free wheeling diodes
Inverters
Motor drives

1
Anode
1

2
Common
cathode

3
Anode
2

DESCRIPTION
D92-02 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed
by any rectifier previously available. With basic
ratings of 200V and 10 A per leg continuous current,
the D92-02 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor. These
FRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes.

PRODUCT SUMMARY
VR

200 V

VF at 10A at 25 C

0.95 V

IF(AV)

2 x 10 A

trr (typical)

35 ns

TJ (maximum)

150 C

Qrr (typical)

25 nC

lRRM (typical)

1.9 A

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER
Cathode to anode voltage

Maximum continuous forward current

TEST CONDITIONS

VR
per leg
per device

VALUES

UNIT

200

10
IF

50Hz square
wave duty = , T C =115C

20

Single pulse forward current (Peak forward current per leg)

l FSM

100

Maximum repetitive forward current (per leg)

l FRM

40

T J , T Stg

- 55 to + 150

Operating junction and storage temperature range

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N-D92-02

SEMICONDUCTOR

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Nell High Power Products

ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified)
PARAMETER

Cathode to anode
breakdown voltage

Maximum forward voltage

SYMBOL

VFM

IRM

Junction capacitance

CT

Series inductance

LS

UNIT

MIN.

TYP.

MAX.

200

IF = 10 A

0.9

0.95

IF = 20 A

IF = 10 A, TJ = 125 C

0.8

V R = V R rated

15

T J = 125C, V R = V R rated

250

V R = 200V

55

pF

Measured lead to lead 5 mm from package body

nH

UNIT

IR = 100 A

VBR

Maximum reverse
leakage current

TEST CONDITIONS

DYNAMIC RECOVERY CHARACTERISTICS PERLEG(TJ = 25 C unless otherwise specified)

PARAMETER

SYMBOL

t rr

Reverse recovery charge

MIN.

TYP.

MAX.

I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)

14

20

IF = 1.0 A, dIF/dt = 50 A/s, VR =30 V, TJ = 25C

30

t rr1

TJ = 25 C

21

t rr2

TJ = 125 C

35

1.9

4.8

Reverse recovery time

Peak recovery current

TEST CONDITIONS

IF= 10A
dIF/dt = -200 A/s
VR = 160 V

ns

l RRM1

TJ = 25 C

l RRM2

TJ = 125 C

Q rr1

TJ = 25 C

25

Q rr2

TJ = 125 C

78

MIN.

TYP.

MAX.

UNITS

300

1.5

0.7

nC

THERMAL - MECHANICAL SPECIFICATIONS PER LEG

PARAMETER

Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting

SYMBOL

Tlead

TEST CONDITIONS

0.063 '' from case (1.6 mm) for 10 s

RthJC
K/W

Thermal resistance,
junction to ambient

RthJA

Typical socket mount

40

Thermal resistance,
case to heatsink

RthCS

Mounting surface, flat, smooth and greased

0.25

5.5
0.19

g
oz.

6
(5)

12
(10)

kgf . cm
(lbf . in)

Weight
Mounting torque
Marking device

Case style TO-3PB (JEDEC)

D92-02

ORDERING INFORMATION TABLE

Device code

D92

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02
3

- Nell Semiconductors product

- FRED family, type = D92, current rating = 10A x 2,

- Voltage rating, 02 = 200V

package outline = TO-3PB

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N-D92-02

SEMICONDUCTOR

Nell High Power Products

Fig.2 Typical values of reverse current vs.
reverse voltage
100

100

Reverse current, l R (A)

lnstantaneous forward current, I F (A)

Fig.1 Maximum forward voltage drop

characteristics

10

T J =150C
T J =125C
T J =25C

T J =125 C

T J =100 C

0.1

T J =25 C

0.01

0.001

0.1
0

0.4

0.8

1.6

1.2

2.0

50

100

150

200

250

Forward voltage drop, V FM (V)

Reverse voltage, V R (V)

Fig.3 Typical junction capacitance vs.

reverse voltage

Fig.4 Maximum allowable case temperature vs.

average forward current

Allowable case temperature ( C)

1000

Junction capacitance, C T (pF)

T J =150C

10

T J =25 C

100

10
0

10

100

160
150
140
DC

130
Square wave (D = 0.50)
Rated V R applied

120
110

See note (1)

100
0

1000

15

12

Average forward current, l F(AV) (A)

Reverse voltage, V R (V)

Thermal lmpedance, R th(j-c) (C/W)

Fig.5 Maximum thermal impedance R th(j-c) characteristics

10

1
P DM

0.1

Single pulse
(thermal resistance)

0.01
0.00001

0.0001

t1

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

0.001

t2

Notes:
1. Duty Factor D =t 1 /t 2.
2.Peak T J = PDM x R th(j-c) +T C
0.01

Rectangular pulse duration, t 1 (s)

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0.1

.
1

N-D92-02

SEMICONDUCTOR

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Nell High Power Products

Fig.7 Typical reverse recovery time vs. dl F /dt

15

50

12

40
RMS limit

t rr (ns)

Average power loss (W)

Fig.6 Forward power loss characteristics

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

12

20

l F = 20A
l F = 10A
l F = 5A

V R = 160V

0
100

0
0

30

10

DC

T J =125C
T J =25C

15

1000

Average forward current, l F(AV) (A)

dl F /dt(A/ s)

Fig.9 Reverse recovery parameter test circuit

Fig.8 Typical stored charge vs. dl F /dt

Q rr (nC)

250

200

T J =125C
T J =25C

150

l F = 20A
l F = 10A
l F = 5A

V R =200V

0.01
L=70H
D.U.T.

100
dl F /dt
adjust

50
V R = 160V

0
100

IRFP250

1000
dl F /dt(A/ s)

Note
(1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ;
Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6);
Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = Rated V R

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N-D92-02

SEMICONDUCTOR

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Nell High Power Products

Fig.10 Reverse recovery waveform and definitions

(3)

t rr

IF

ta

tb

Q rr
(2)

l RRM

(4)

0.5 l RRM
dl (rec)M /dt (5)
0.75 l RRM

(1) dl F /dt

(1) dl F /dt - rate of change of current

through zero crossing

(4) Q rr - area under curve defined by t rr

and l RRM

(2) l RRM - peak reverse recovery current

Qrr =

t rr xl RRM
2

(3) t rr - reverse recovery time measured

from zero crossing point of negative (5) dl (rec)M /dt - peak rate of change of
current during t b portion of t rr
going l F to point where a line passing
through 0.75 l RRM and 0.50 l RRM
extrapolated to zero current.

1.8

4.0

4.80.2
2.00.1

3.2 0,1

4.0 max

20.0 min

19.90.3

2.0

15.60.4
9.6

5.0 0 . 2

TO-3PB

5.450.1

+0.2
1.05 -0.1

+0.2
0.65 -0.1

5.450.1

1.4
common
cathode
2

3
1
Anode
1

All dimensions in millimeters

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2
Common
cathode

3
Anode
2