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NOTES :
V = 2.71V,+2.66V
GS
=V + I R
EQ GS D S
K
2
I = n V
V
D
2 GS TN
K R
2
V
=V
+ n S V
V
EQ GS
2 GS TN
4 =V
GS
6
3
2510
3910
V
+
GS
2
= I ( R + R ) +V
DD D D S
DS
V
= 6.08V
DS
SB
= I R = 22,000 I
D
D S
V = V + ( V + 2 2 )
TN TO
F
F
SB
V = 1 + 0.5( V + 0.6 0.6 )
TN
SB
25 10 6
2
V
I '=
V
D
TN
GS
2
DS
=V
DD
I ( R + R ) = 10 40,000 I = 6.48V
D D S
D
V
V
V =V
GS DD
2 GS TN
2.6 10 4 104
2
V = 3.3
V
1
GS
GS
2
Kn R
V = 0.769V,+2.00V
GS
DS
=V
GS
=V
DD
I R
D D
V
A
4 V
= 1600* 250
(4 1 DS )V
DS
DS
2
V2
V
= 2.3V and ID=1.06 mA
DS
15V (220k)I
SG
=0
2
15V (220k) 50 A V
2 V
=0
SG
2 V2 SG
V
SG
= 0.369V,3.45V
SD
>V
SG
V
TP
MOSFET Circuits At DC
Fig. Ex6
Fig. Ex7
Fig. Ex8
Example 6: Design the circuit of Fig. Ex6 so that the transistor operates at
ID=0.3 mA and VD=+1V. The NMOS transistor has Vt = 1V, nCox=20 A/V2,
L=1 m, and W=30m.
Example 7: Design the circuit in Fig. Ex7 to obtain a current ID of 0.4 mA. Find
the value required for R and find the DC voltage VD. The NMOS transistor has Vt
= 0.5V, nCox=20 A/V2, L=1 m, and W=40m.
Example 8: Design the circuit in Fig. Ex8 to establish a drain voltage of 0.1 V.
What is the effective resistance between drain and source at this operating
point? Let Vt = 1V and kn = 1 mA/V2
Fig. Ex9
Fig. Ex10
n
I
=
REF
2 L
'
W
n
I =
O
2 L
V GS1
M 1
V GS2
M 2
But VGS2=VGS1
Assumption: M1 and
M2 have identical VTN,
Kn, and W/L and are
in saturation.
L
I = I
O REF W
TN
TN
2
1+ V
DS1
2
1+ V
DS2
W
1+ V
M 2
DS2 L
1+ V
W
DS1 L
M 1
M 2 I
REF
M 1
Analysis:
I = I
O REF
GS
=V
TN
2I
L M 2
W
L M1
= 250A
= 1V + 2(50A) = 1.82V
W
A
2*75
K n (1+ V
)
DS 1
L
V2
REF