04

Last analysis use various simplifying

assumptions.
In this section, we will include other
parameter that is essential in analog circuit
analysis.
Three second-order effects are:
Body effect
Channel Length Modulation
Sub-threshold conduction

Second-order effects:
Body effect
Channel Length Modulation
Subthreshold conduction

In previous analysis, we have assumed that the

bulk and the source of the transistor were tied to
ground.
What happen if the bulk voltage of an nFET drops
below the source voltage as shown below?

Since the S and D junctions remains reverse-biased, the

device continues to operate properly but with certain
characteristics may change.

Let VS=VD=0, and VG is less than VTH so that a

depletion region is formed under the gate but no
inversion layer exists.
As VB become more negative, more holes are
attracted to the substrate connection, leaving a
larger negative charge behind, i.e the depletion
region becomes wider.

The threshold voltage is a function of the total

charge in the depletion region because the gate
charge must mirror Qd before an inversion layer is
formed.
Thus, as VB drops and Qd increases, VTH also
increase.
This is called the body effect or the backgate effect

With body effect, the threshold voltage is given as:

VTH VTH 0

2F VSB 2F

Where VSB is the sourcebulk potential difference and

the body effect coefficient, is

2qsiNsub

Cox
The body effect can occur if the source voltage
varies with respect to Vsub.

The body effect can occur if the source voltage varies with
respect to Vsub.
From Fig (a),
the substrate tied to ground
Let Vin become more positive
Vout, will also become more positive
This increase the potential difference between the source and the
bulk
Thus, rising the value of VTH.

Therefore, Vin-Vout must increase to maintain ID constant.

No Body
Effect

With Body
Effect

Second-order effects:
Body effect
Channel Length Modulation
Subthreshold conduction

From previous analysis, we noted that the actual

length of the inverted channel gradually decreases
as the potential difference between the gate and
the drain decreases.
Thus, L is a function of VDS. This is called channel
length modulation

L' L L

1
1/L' (1 L /L)
L
1
1 / L' (1 VDS )
L

VDS L / L

where

ID

nCox W
2

ID

L'

(VGS VTH ) 2

nCox W
2

(VGS VTH ) 2 (1 VDS )

is the channel length modulation coefficient.

This phenomenon results in a nonzero slope in the
ID/VDS characteristic and hence a non-ideal current
source between D and S in saturation.
represents the relative variation in the length for
a given increment in VDS.
For longer channel, is smaller.

With channel-length modulation, recalculate

the gm

ID

nCox W

2 L
ID
gm
VGS V

(VGS VTH ) 2 (1 VDS )

DS

constant

W
gm nCox (V GS VTH )(1 V DS )
L
gm

2 nCox W

ID
L
(1 VDS )

2ID
gm
, (unchanged)
VGS VTH

Second-order effects:
Body effect
Channel Length Modulation
Sub-threshold conduction

We have assumed that the device turns off

abruptly as VGS drop below VTH.
In reality, for VGSVTH, a weak inversion
layer still exists and some current flow from
D to S.
Even for VGS<VTH, ID is finite, but it exhibits an
exponential dependence on VGS.
This is called sub-threshold conduction

The quadratic characteristic describe

previously form the large-signal model of
MOSFETs.
Large-signal model is useful when the
signal significantly disturbs the bias points.
If the case in bias condition is small, a
small-signal model is used to approximate
the large-signal model around the
operation points
This helps to simplify the calculations.

The small-signal model is derived by

producing a small increment in a bias point
and calculating the resulting increment in
other bias parameters.

Since the drain current is a function of the

gate-source voltage, we incorporate a
voltage-dependent current source equal
to gmVGS

Due to the channel-length modulation, the drain

current also varies with the drain-source voltage.
This effect can be modeled by a voltage-dependent
current source.

Since a current source whose value linearly

depends on the voltage across, it is equivalent
to a linear resistor.

Recall that the bulk

potential influences the
threshold voltage and
hence the gate-source
overdrive.
With all other terminals held
at a constant voltage, the
drain current is a function
of the bulk voltage.
Modeling this dependence
by a current source
connected between D and
S, we write the value as

gmbVBS

To represent the behavior of transistors in

circuit simulation.
TSMC 0.35um/0.13um spice model
How to relate the spice model with device
How to simulate dc, trans & ac
Frequency response

In most CMOS technology, pMOS devices are quite

inferior to nMOS transistors.
This is due to the lower mobility of holes, yielding
low current drive and transconductance.
For given dimension and bias currents, nMOS
transistors exhibits a higher output resistance,
providing more ideal current source and higher
gain in amplifier.
For these reason, it is preferred to incorporates
nMOS rather than pMOS wherever possible.

VTO: threshold voltage with zero Vsb (unit: V)

GAMMA: body effect coefficient (unit: V1/2 )
PHI: 2F (unit: V)
TOX: gate oxide thickness (unit: m)
NSUB: substrate doping (unit: cm-3)
LD: source/drain side diffusion (unit: m)
UO: channel mobility (unit: cm2/V/s)
LAMBDA: channel-length modulation coefficient
(unit: V-1)
CJ: source/drain bottom-plate junction capacitance
per unit area (unit: F/m2)

CJSW: source/drain sidewall junction capacitance

per unit length (unit: F/m)
PB: source/drain junction built-in potential (unit: V)
MJ: exponent in CJ equation (unitless)
MJSW: exponent in CJSW equation (unitless)
CGDO: gate-drain overlap capacitance per unit
width (unit: F/m)
CGSO: gate-source overlap capacitance per unit
width (unit: F/m)
JS: source/drain leakage current per unit area (unit:
A/m2)