BTA/BTB12 and T12 Series

12A TRIACS

SNUBBERLESS, LOGIC LEVEL & STANDARD

MAIN FEATURES:

A2

Symbol

Value

Unit

IT(RMS)

12

VDRM/VRRM

600 and 800

IGT (Q1)

10 to 50

mA

A1

A2

A1

DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB12 and T12 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T12
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)

A2
G

D2PAK
(T12-G)
A2

A1
A2
G

A1
A2
G

TO-220AB Insulated
(BTA12)

TO-220AB
(BTB12)

ABSOLUTE MAXIMUM RATINGS

Symbol
IT(RMS)

ITSM

I t
dI/dt

Parameter
RMS on-state current (full sine wave)

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25C)
It Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns

VDSM/VRSM Non repetitive surge peak off-state

voltage
IGM
PG(AV)
Tstg
Tj

Peak gate current

Average gate power dissipation
Storage junction temperature range
Operating junction temperature range

September 2000 - Ed: 3

Value

Unit

12

A
A

DPAK/TO-220AB

Tc = 105C

TO-220AB Ins.

Tc = 90C

F = 50 Hz

t = 20 ms

120

F = 60 Hz

t = 16.7 ms

126

tp = 10 ms

100

A s

F = 120 Hz

Tj = 125C

50

A/s

tp = 10 ms

Tj = 25C

VDRM/VRRM

tp = 20 s

Tj = 125C

Tj = 125C

- 40 to + 150
- 40 to + 125

+ 100

1/7

BTA/BTB12 and T12 Series

ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)

SNUBBERLESS and LOGIC LEVEL (3 Quadrants)

Symbol

IGT (1)
VGT

Test Conditions

Quadrant

RL = 30

VD = 12 V

VGD

VD = VDRM RL = 3.3 k
Tj = 125C

IH (2)

IT = 100 mA

IL

IG = 1.2 IGT

T12
SW

CW

BW

35

10

35

50

I - II - III

MAX.

I - II - III

MAX.

1.3

I - II - III

MIN.

0.2

I - III

(dI/dt)c (2)

Unit

T1235

mA
V
V

MAX.

35

15

35

50

mA

MAX.

50

25

50

70

mA

60

30

60

80

II
dV/dt (2)

BTA/BTB12

VD = 67 %VDRM gate open

Tj = 125C

MIN.

500

40

500

1000

V/s

(dV/dt)c = 0.1 V/s

Tj = 125C

MIN.

6.5

A/ms

(dV/dt)c = 10 V/s

Tj = 125C

2.9

Without snubber

Tj = 125C

6.5

6.5

12

STANDARD (4 Quadrants)
Symbol

Test Conditions

IGT (1)
VD = 12 V

Quadrant

RL = 30

VD = VDRM RL = 3.3 k Tj = 125C

IH (2)

IT = 500 mA

IL

IG = 1.2 IGT

25
50

50
100

Unit

ALL

MAX.

1.3

ALL

MIN.

0.2

I - III - IV

VD = 67 %VDRM gate open Tj = 125C

(dV/dt)c (2) (dI/dt)c = 5.3 A/ms

MAX.

Tj = 125C

mA

MAX.

25

50

mA

MAX.

40

50

mA

80

100

MIN.

200

400

V/s

MIN.

10

V/s

II
dV/dt (2)

C
I - II - III
IV

VGT
VGD

BTA/BTB06

STATIC CHARACTERISTICS
Symbol
VT (2)

Test Conditions
ITM = 17 A

tp = 380 s

Unit

MAX.

1.55

Vto (2)

Threshold voltage

Tj = 125C

MAX.

0.85

Rd (2)

Dynamic resistance

Tj = 125C

MAX.

35

IDRM

VDRM = VRRM

Tj = 25C

mA

IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1

2/7

Tj = 25C

Value

Tj = 125C

MAX.

BTA/BTB12 and T12 Series

THERMAL RESISTANCES
Symbol

Parameter

Rth(j-c)

Junction to case (AC)

Rth(j-a)

Junction to ambient

S=1

Value

Unit

DPAK/TO-220AB

1.4

C/W

TO-220AB Insulated

2.3

DPAK

45

TO-220AB
TO-220AB Insulated

60

cm

C/W

S = Copper surface under tab

PRODUCT SELECTOR
Voltage (xxx)
Sensitivity

Type

Package

50 mA

Standard

TO-220AB

50 mA

Snubberless

TO-220AB

BTA/BTB12-xxxC

25 mA

Standard

TO-220AB

BTA/BTB12-xxxCW

35 mA

Snubberless

TO-220AB

BTA/BTB12-xxxSW

10 mA

Logic level

TO-220AB

T1235-xxxG

35 mA

Snubberless

DPAK

Part Number
600 V

800 V

BTA/BTB12-xxxB

BTA/BTB12-xxxBW

BTB: non insulated TO-220AB package

ORDERING INFORMATION

BT A 12 -

600

BW

TRIAC
SERIES
INSULATION:
A: insulated
B: non insulated

VOLTAGE:
600: 600V
800: 800V

CURRENT: 12A

T 12 35

SENSITIVITY & TYPE

B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL

600 G

(-TR)

TRIAC
SERIES
PACKAGE:
G: D2PAK

CURRENT: 12A

VOLTAGE:
600: 600V
800: 800V
SENSITIVITY:
35: 35mA

PACKING MODE:
Blank: Tube
-TR: Tape & Reel

3/7

BTA/BTB12 and T12 Series

OTHER INFORMATION
Part Number

Marking

Weight

Base
quantity

Packing
mode

BTA/BTB12-xxxyz

BTA/BTB12-xxxyz

2.3 g

250

Bulk

T1235-xxxG

T1235xxxG

1.5 g

50

Tube

T1235-xxxG-TR

T1235xxxG

1.5 g

1000

Tape & reel

Note: xxx = voltage, yy = sensitivity, z = type

Fig. 1: Maximum power dissipation versus RMS

on-state current (full cycle).

Fig. 2-1: RMS on-state current versus case

temperature (full cycle).

P (W)

IT(RMS) (A)

16
14
12
10
8
6
4
2
0

IT(RMS)(A)

10 11 12

Fig. 2-2: RMS on-state current versus ambient

temperature (printed circuit board FR4, copper
thickness: 35m),full cycle.

14
13
12
11
10
9
8
7
6
5
4
3
2
1
0

BTB/T12

BTA

Tc(C)

25

50

75

100

125

Fig. 3: Relative variation of thermal impedance

versus pulse duration.

K=[Zth/Rth]

IT(RMS) (A)
3.5
D2PAK
(S=1cm2)

3.0

1E+0
Zth(j-c)

2.5
2.0
1E-1

Zth(j-a)

1.5
1.0
0.5
0.0

4/7

Tamb(C)
0

25

50

75

tp(s)

100

125

1E-2
1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

BTA/BTB12 and T12 Series

Fig. 4:
values).

On-state characteristics (maximum

Fig. 5: Surge peak on-state current versus

number of cycles.

ITM (A)

ITSM (A)

100

Tj max

10
Tj=25C

Tj max.
Vto = 0.85 V
Rd = 35 m

VTM(V)

1
0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Fig. 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of It.

130
120
110
100
90
80
70
60
50
40
30
20
10
0

One cycle

Repetitive
Tc=90C

Number of cycles

10

100

1000

Fig. 7: Relative variation of gate trigger current,

holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C]

ITSM (A), It (As)

Tj initial=25C

dI/dt limitation:
50A/s

1000

t=20ms

Non repetitive
Tj initial=25C

2.5
2.0
IGT

ITSM

1.5
It

100

IH & IL

1.0
0.5
tp (ms)

10
0.01

Tj(C)

0.10

1.00

10.00

Fig. 8: Relative variation of critical rate of

decrease of main current versus (dV/dt)c (typical
values).

0.0
-40

20

40

60

80

100

120

140

Fig. 9: Relative variation of critical rate of

decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

2.8
2.4

SW

2.0

1.6

-20

1.2

BW/CW/T1235

0.8
0.4
0.0
0.1

(dV/dt)c (V/s)

1.0

10.0

100.0

Tj (C)
0

25

50

75

100

125

5/7

BTA/BTB12 and T12 Series

Fig. 10: DPAK Thermal resistance junction to

ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 m).
Rth(j-a) (C/W)
80
DPAK

70
60
50
40
30
20
10
0

S(cm)
0

12

16

20

24

28

32

36

40

PACKAGE MECHANICAL DATA

DPAK (Plastic)
DIMENSIONS
REF.

A
E

Min.

C2

L2

D
L
L3
A1
B2

B
G
A2
2.0 MIN.
FLAT ZONE
V2

FOOTPRINT DIMENSIONS (in millimeters)

DPAK (Plastic)
16.90

10.30

5.08
1.30

3.70
8.90

6/7

Millimeters

A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
R
V2

4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40

Typ.

4.60
2.69
0.23
0.93

1.40

0.40
0

Max.

Inches
Min.

Typ.

Max.

0.169
0.181
0.098
0.106
0.001
0.009
0.027
0.037
0.048 0.055
0.60 0.017
0.024
1.36 0.047
0.054
9.35 0.352
0.368
10.28 0.393
0.405
5.28 0.192
0.208
15.85 0.590
0.624
1.40 0.050
0.055
1.75 0.055
0.069
0.016
8
0
8

BTA/BTB12 and T12 Series

PACKAGE MECHANICAL DATA
TO-220AB / TO-220AB Ins.
DIMENSIONS
B

REF.

Millimeters

Inches

b2

Min.
L
F
I
A

l4

c2

a1

l3
l2
a2

b1

M
c1

A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
l2
l3
M

15.20

Typ.

Max.

Min.

15.90 0.598

Typ.

Max.
0.625

3.75
0.147
13.00
14.00 0.511
0.551
10.00
10.40 0.393
0.409
0.61
0.88 0.024
0.034
1.23
1.32 0.048
0.051
4.40
4.60 0.173
0.181
0.49
0.70 0.019
0.027
2.40
2.72 0.094
0.107
2.40
2.70 0.094
0.106
6.20
6.60 0.244
0.259
3.75
3.85 0.147
0.151
15.80 16.40 16.80 0.622 0.646 0.661
2.65
2.95 0.104
0.116
1.14
1.70 0.044
0.066
1.14
1.70 0.044
0.066
2.60
0.102

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2000 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom
http://www.st.com

7/7