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V.S. Kalinovsky, V.V. Evstropov, V.M. Lantratov, P.V. Pokrovsky and V.M. Andreev
Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021, St.Petersburg, Russia
phone: +7 (812) 2927933, fax: +7 (812) 2971017, e-mail: vitak.sopt@mail.ioffe.ru
ABSTRACT: Correlation and similarity of main characteristics of multijunction solar cells (MJ SC): voltage dark
forward current density, V-J; efficiency (proportional to the introduced auxiliary term efficiency voltage, V)
sunlight concentration ratio (proportional to the photogenerated current density) , C have been considered. It
has been shown that V-J and those characteristics have a shape of a continuous function consisting of segments. For
each segment, an analytical dependence is deduces expressing the photogenerated current density through auxiliary
definition efficiency voltage V, which is proportional to the efficiency . The segments of the analytical Jg V
characteristic contain the same two parameters as the corresponding segments of the initial dark J-V characteristic do
the preexponential factor J0 and the diode coefficient A. Hence, the Jg V characteristic is uniquely associated (at
idealization of the connecting part tunneling diodes in MJ SCs) with the initial dark J-V characteristic. The
equivalent electrical circuit of a MJ SC is considered and adjusted to an electrical circuit of a virtual singlejunction
SC. Determined were the preexponential factors J0 and the diode coefficients A for each segment of the J-V
characteristic. For them, electrically idealized - C characteristics were calculated and plotted. The influence of the
connecting elements (tunneling diodes) has been simulated and taken into account by selecting an ohmic series
resistance RS. A good fit of the calculated - C dependencies to experimental ones for InGaP/GaAs/Ge MJ SCs has
been obtained. An abrupt increase in the current density has been observed and analyzed in the experimental voltage
dark forward current density characteristics of MJ SCs.
Keywords: Multijunction Solar Cells, Solar Cell Efficiencies, Concentrator Cells
INTRODUCTION
2 EQUIVALENT
A MJ SC
ELECTRICAL
CIRCUIT
OF
f2
fn
f n+1
Vk
Aki
1)
(1)
Photocurrent density
g
Jg
f1
Jg
Jg
f2
J1
JS
fn
J2
V1
f n+1
Jn
V2
Jg
JS
j
t1
t2
V= V1+V2+V3
Voltage
Figure 3: Schematic of the load J-V characteristics of PV
p-n junctions comprising, for example, triplejunction
InGaP/GaAs/Ge SC (in the case of photocurrent
mismatching): 1 bottom Ge p-n junction; 2 middle
GaAs p-n junction; 3 top InGaP p-n junction;
4 resulting load characteristic of triplejunction
InGaP/GaAs/Ge SC in the case of forced current
matching of the middle GaAs p-n junction. Conditions
for forced matching: Jg Jg2, JS3 = J03(Jg/Jg3) and
JS1 = J01(Jg/Jg1) (Fig.2).
g
g
n-1
Jg
Jg
Jg
f3
Jg
fn
f2
JS
J2
f1
JS
Vf= V1 + V2 + . . . + Vn
f n+1
Jg
Jg
3
4
5
>5
iCS
SC
S
Vf
VS
V2 V3
V1
Vn
VS
V = V + V + ... +V
f
Jg2
Jn
Jg
Jg3
J2
Jg
1
Jg1
J3
(-j)
3 MAIN CHARACTERISTICS OF A
MULTIJUNCTION SOLAR CELL
3.1 Dark and light J-V characteristics of a photovoltaic
p-n junction
The dark forward current density voltage
characteristic, J-V, of each PV p-n junction comprising a
MJ SC may be described by a sum of three current
components [5]: diffusion (diode coefficient Ad = 1),
recombination (Ar = 2) and tunneling-trapping (At > 2)
ones:
J = J 0t (exp
+ J 0d (exp
At
1) + J 0 r (exp
Ar
1) +
(2)
1)
Ad
J
J0
+ 1)
(3)
Vn ( n +1) =
J
=
n ( n +1)
An A( n +1)
An A( n +1)
A /( A A
ln( J 0 n J
)
0 ( n +1)
(4)
J 0 nn n ( n +1 )
A /( A A
)
J 0(nn++1 1) n ( n +1 )
Vrd = 2 ln(
J 0r
J 0d
) ; J rd =
J 02r
J 0d
(5)
Jg j
J0
+ 1)
(7)
(8)
( J g j)
V = A ln
J0
j = J J exp V
g
0
A
(9)
V = A ln + 1
J0
J = J (exp 1)
0
A
(10)
dV
is given by the formula (9). As a result, to determine Vm,
it is necessary to find the root of the transcendental
equation [2]:
(12)
V
J m = J g J 0 exp m
E
(13)
(14)
= J mVm / Pinc =
Jg
Pinc
V
Vm2
=
Vm + E Vconv
(15)
Vm2
Vm + E
1
Vm = V + V (V + 4 E )
2
V :
(17)
(11)
Vm
V oc = V m + E ln 1 + E
V
V
1 + m exp m = exp V oc
E
E
E
(16)
J g = J 0 1 +
(18)
2E
2E
The whole
J g ( C ) V ( ) characteristic is
V + V (V + 4E) V + V (V + 4E)
0
0
0
0
exp 0
J g = J 0 1+ 0
2E
2E
(19)
V0 = V + J g Rs
dV0
dJ g
Rs
(20)
1
J g 2.72 J 0 V0 / E exp(V0 / E )
(21)
10
-1
10
-2
10
-3
10
J, A/cm
-4
10
-5
10
5
>10
-6
10
-7
10
=3
-8
10
-9
=5
=4
10
10
-10
10
-11
10
-12
0,0
0,5
1,0
1
2
3
4
5
Ge SC
GaAs SC
GaInP SC
InGaP/GaAs/Ge SC
rated InGaP/GaAs/Ge SC
1,5
2,0
2,5
3,0
U, V
Jg, A/cm
10
3,0
-7
10
-9
-8
-7
10
-6
10
-5
10
10
10
-4
-2
-1
10
10
10
10
10
-10
10
30
25
A=3
A>10
1,5
35
A=3
2,0
U, V
10
-3
10
-9
10
2,5
-8
10
J, A/cm
-10
4
20
A>10
-11
10
1,0
Efficiency, , %
-6
10
15
-12
10
0,5
A=5
-13
10
0.0
0.5
0,0
U, V
10
-8
10
A=5
-7
-6
10
10
10
-5
10
-4
-3
10
10
-2
-1
10
10
10
10
C, (AM0)
h21B1
p
h21B2
b)
p
n
3
characteristic,
3,
5
calculation
(Rs = 0,
Rs = 0.3 Ohmcm2),
4
experiment,
(0,
136 mW/cm2).
Segments:
> 10,
J0(A>10) = 4.010-9 A/cm2; = 5, J0(A=5) = 510-13 A/cm2;
= 3, J0(A=3) = 2.410-18 A/cm2.
Fig. 9 and 10 present the experimental and rated J-V
and C characteristics for the InGaP/GaAs/Ge MJ SC
in exciting by the AM0 and AM1.5 sunlight,
respectively. The plotted C dependences calculated
by the formulae (19), (20) for the AM0 and AM1.5
sunlight coincide well with the experimental ones at
found by fitting RS = 0,3 ohmcm2 and 0,075 ohmcm2,
correspondingly. The coincidence indicates the validity
of the suppositions and approximations in obtaining the
equation (19) with allowing for (20): photovoltaic p-n
junctions are generation current matched or close by
current (Jg1 = Jg2 = Jgn) = Jg; the whole connecting
part of the MJ SC is simulated by an ohmic series
resistance RS; to account for the effect of the series
resistance on the MJ SC efficiency, the efficiency
voltage V ( ) calculated in the resistanceless
approximation (RS = 0) is decreased by the value JjRS.
2
Jg, A/cm
10
3,0
-10
10
-9
10
-8
10
-7
-6
10
10
-5
-4
10
-3
10
10
-2
-1
10
10
10
10
45
40
2,5
2
A=3
A=3
2,0
A>10
A>10
1,5
35
30
25
20
1,0
15
A=4
0,5
A=4
10
A=5
0,0
-8
10
Efficiency, , %
a)
fitting;
( V ) C ( J g )
U, V
A=5
-7
10
10
-6
-5
10
5
10
-4
10
-3
-2
10
10
-1
10
10
10
10
C,(AM1.5)
The
( V ) C ( J g )
dependence
character
CONCLUSION
ACKNOWLEDGMENTS
The
authors
express
their
gratitude
to
Ilmenkov G.V.,
Kozlova M.S.,
Kalyuzhny N.A.,
Mintairov S.A. for useful remarks and help in the work.
This work was supported by the Russian Foundation
for Basic Research, grants no. 09-08-00412 and
no. 09-08-12202.
REFERENCES