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Article history:
Received 16 March 2013
Received in revised form 18 July 2013
Accepted 22 July 2013
Keywords:
Nonisolated DCDC converter
High voltage gain
Low voltage stress
Hybrid switching capacitor technique
a b s t r a c t
A nonisolated DCDC converter with high voltage gain and low voltage stress on switches is proposed in
this paper. For absorption of energy, n stages of diodecapacitorinductor (DCL) units are used at the
input that results in higher voltage gains. Actually, the proposed converter generalizes the voltage lift
circuit and combines it with a voltage multiplier cell. Therefore comparing to structures with one stage of
DCL unit, it will be feasible to achieve supposed voltage gain at lower duty cycles. Lower values of duty
cycle will result in increasing of converter controllability and increasing of operation region. This paper
focuses on the generalized steady state analysis of the proposed converter for three regions of operation
named as continuous conduction mode (CCM), boundary conduction mode (BCM) and discontinuous
conduction mode (DCM). Theoretical analysis and performance of the proposed converter will be veried
by both simulation and experimental results.
2013 Elsevier B.V. All rights reserved.
1. Introduction
Ever-increasing consumption of fossil fuels causes for nishing
their resources. Besides, more consumption of these resources will
lead to more environmental contamination and cost increase. Thus
use of pure and cheap energy sources has been more paid attention
by engineers [14]. As one of these sources, it can be pointed to fuel
cells. Output voltage of fuel cells is very low. Therefore in order to
produce high voltages, it is necessary to combine several of these
cells in series and parallel form. For example, for producing voltages around 100 V & 300 V, 250 & 750 cells should be connected in
series respectively. But increasing in the number of cells will lead
to decrease in efciency. Therefore for increasing of output voltage,
it will need to DCDC voltage booster converters with high gain [5].
The boost converter is the most common one for achieving this
purpose. But in practice the gain decreases at the duty cycles around
unity due to parasitic components. In addition, its control and stability at high duty cycles is very complex.
One alternative is utilizing of cascade boost converters. A cascade boost converter with soft switching (ZVS) is proposed in [6].
But the drawback is that the voltage stress on switching component is equal to high output voltage. Also quadratic converters in
[7] can achieve to high voltage gain but the drawback is that the
Corresponding author at: Faculty of Electrical and Computer Engineering, University of Tabriz, 51664 Tabriz, Iran. Tel.: +98 411 3300819; fax: +98 411 3300819.
E-mail addresses: e-babaei@tabrizu.ac.ir, babaeiebrahim@yahoo.com
(E. Babaei).
0378-7796/$ see front matter 2013 Elsevier B.V. All rights reserved.
http://dx.doi.org/10.1016/j.epsr.2013.07.012
72
several switches and the voltage stress on the last switch is equal
to output voltage. Combined structures of boost converters and
switching capacitors are investigated in [21]. But the magnitude
of output voltage is limited by the rating of switching component.
A new structure is suggested in [22] which is expandable for high
voltage applications. However negative voltage gain is the main
drawback of this converter.
Due to the aforementioned drawbacks of the boost converters
with high voltage gain, proposition of converters with high voltage gain, low voltage stress on semiconductors, low losses and
therefore high efciency is a necessary task. In [23] an interleaved
boost converter with high voltage gain is suggested which can be an
alternative to solve these objectives. This converter has a modular
structure and the output voltage and the input current ripple are
very low. Also another advantage of this converter is that the rating
of currents and voltages of the switches are reduced signicantly.
Another solution is the utilizing of relift converters [24,25]. These
converters have higher voltage gain and lower current ripple compared to the discussed previous ones. High efciency, increased
power density, simple structure and low cost are the other main
advantages of these converters. Combining this structure with voltage multiplier cells in [15,16], high voltage gain and lower voltage
stress on switches are attainable [26]. Because of low voltage stress
on switches, the use of Schottky rectier allows lower reverse
recovery current which results lower conduction losses. By applying two stages of lift circuit and an additional voltage multiplier cell
converter in [26], another high step-up transformerless converter
has been achieved [27]. The main advantages of the proposed converter are higher voltage gain and lower voltage stress across the
main switch. Extension of the suggested converter in [20] is made
by switching inductor cells for high power application in [28].
In this paper, a DCDC converter with high voltage
gain is proposed. The suggested converter uses n stages of
diodecapacitorinductor (DCL) units at the input. It is possible
to achieve high voltage gain by increasing of the stages number.
The main advantage of the proposed converter is that the voltage
stresses across the semiconductor devices remains constant at
xed voltage gains in spite of increasing n. This paper is organized
as follows:
- In Section 2, the detailed analysis of the proposed converter in
CCM, DCM and BCM is presented.
- In Section 3, design considerations for capacitors and inductors
based on the section II is discussed.
- In Section 4, input lter design and interleaving effect are discussed.
- In Section 5, real gain of the proposed converter based on real
components models is calculated.
- In Section 6, the extension of the proposed converter is given.
- In Section 7, the effect of the mismatch in inductances is analyzed.
- In Section 8, simulation and experimental results will be presented.
2. Proposed converter
Proposed converter in [26] is shown in Fig. 1. Its voltage gain is
M = Vo /Vg = (3 + d)/(1 d), where d is normalized switch Q on-time
or converter duty cycle and dened as d = Ton /T . Ton is conduction
time of switch Q and T is switching interval. Vo and Vg are output
and input voltages, respectively. The proposed converter is shown
in Fig. 2. n stages of DCL units which are inserted in truncated
line are used at the input stage of the proposed converter. Utilizing
this structure, attaining of high voltage gains is possible.
In addition voltage stress on semiconductors remains constant
or lower compared to converter of Fig. 1. In the proposed converter
VC 1
Ig Q D
1
Vg
L1
VL 2
Io
D3
C1
L2
Do1
Do 2
VL1 D
2
Vo
Co
RL
C2
VC 2
(1)
VCo1
Q
VL ( n
Cn
Dn1
C3
D31
Ig
Vg
D21
D11
VL3
C2
1)
Ln
Io
C o1
1
VCn
Vo
VC 3
L3
Co
Do1
D02
VL 2 L VC 2
2
C1
V
VL1 L C1
1
D12
D22
D32
Dn2
Co 2
V Co 2
RL
VCo1
Q
VL ( n
Cn
Dn1
Ig
Vg
D21
Ln
C o1
Vo
V
VL 3 L3 C 3
Co
C2
Do1
Ig
RL
Vg
D12
D32
Dn2
Vo
Co
C2
Do1
RL
D02
C1
V
VL1 L C1
1
Co 2
C o1
1
VL 2 L VC 2
2
D11
D22
Ln
V
VL 3 L3 C 3
D21
D02
1)
Io
VCn
C3
D31
C1
V
V L1 L C 1
1
VL ( n
Cn
Dn1
VL 2 L VC 2
2
D11
VCo1
Io
VCn
C3
D31
1)
73
D12
D22
Dn2
D32
V Co 2
Co 2
V Co 2
(a)
(b)
Fig. 3. Equivalent circuits of the proposed converter in CCM, (a) rst time interval (b) second time interval.
(2)
(3)
Vo Vg
2
(5)
VD1(i+1) = VD(ni)2 =
Vg + Vo
(n i), i = 0, 1, 2, ..., n 1
2(n + 1)
VD = Vo VCo1
(13)
(14)
1
Co
dTS
iC0,1 dt +
0
1
Co
Ts
iC0,2 dt = 0
(15)
dTS
In which iC0,1 & iC0,2 are the currents of capacitor Co in the rst
and second time intervals, respectively. According to Fig. 3(a):
iC0,1 = iD Io
iC0,2 = Io
(7)
(8)
where ico1,1 is the current through capacitor C01 in rst time interval. Substituting Eq. (7) into Eq. (8), we can write:
iQ = (n + 1)iL1 + niC1,1 iCo1,1
(9)
Second time interval {dTS < t < TS }: In this time interval switch
Q is turned off. According to equivalent circuit of Fig. 3(b), diodes
D11 , D12 , . . ., Dn1 , Dn2 are being off. Therefore, capacitors C1 , C2 , . . .,
Cn and inductors L1 , L2 , . . ., Ln+1 will be in series to each other and
charge capacitors Co1 & Co2 which are connected in parallel. The
currents which follow through capacitors Co1 & Co2 (iCo1,2 & iCo2,2 )
and diodes Do1 & Do2 (iDo1,2 & iDo1,2 ) can be expressed as:
iCo1,2 = iCo2,2 = iD01 = iD02 =
(12)
The diodes D11 , D12 , . . ., Dn1 , Dn2 currents are given by:
..
.
nVC1 VCo1
n+1
The voltages across diodes D11 , D12 , . . ., Dn1 , Dn2 are equal to:
(4)
(11)
iL1
2
(10)
(16)
Substituting Eqs. (16) and (17) into Eq. (15) and after some
manipulation, following expression is derived for average current
through diode D during second time interval:
iD = Io
d
(18)
Furthermore average values of iC01 & iC02 during the rst time
interval is equal to:
iCo1 = iCo2 = Io
d
(19)
dTS
iCi,1 dt +
0
1
Ci
Ts
iCi,2 dt = 0 for i = 1, , n
dTS
(20)
74
TS
V L1 ,
, VL n
Toff
Ton
Vgate
t
1
Vg
(nVC1 VC o1 ) /(n 1)
iQ
(n 1)iL1 niC1 iCo1
iD11 , , iDn 2
iL1 iC1
iD , iDo1
I L1 / 2
Io / d
iC1, , iCn
iL1 (1 d ) / d
t
iL1
iCo1
I L1 / 2
Io / d
Fig. 4. Key waveforms of the proposed converter in CCM.
VQ,pu =
1d
d
iL1 = iL1
d
d
(22)
which d is dened as Toff /TS in Eq. (22) and Toff is the duration of
the second time interval.
Based on the aforementioned analysis, the key waveform of the
proposed converter in a switching period is shown in Fig. 4. The
average value of inductors voltages in each switching period is zero.
Thus, using Eqs. (3) and (12):
dTS
Ts
Vg dt +
0
dTS
nV V
C1
Co1
n+1
18
4
6
13
1 + MCCM
2MCCM
(25)
dt = 0
(23)
Ig
Vo
2n + d + 1
2n + d + 1
=
=
=
Vg
Io
1d
d
2(n + 1)dVg
Vo (2n + 1)Vg
(26)
80
According to the considerations, the variation of capacitor voltage during switching intervals is negligible. Thus, substituting Eqs.
(2) and (4) into the Eq. (23) and simplication, voltage gain of the
proposed converter (MCCM) in CCM is obtained as below:
MCCM =
21
(21)
Substituting Eq. (21) in Eq. (20) and assuming that iL1 and iCi,1 are
equal to their average values in the corresponding time intervals,
the following relation for iCi,1 is obtained:
iCi1 =
Components number
7+d
1d
5+d
1d
Nd
1d
1+N
1d
N(2d)
1d
proposed converter in [11] with N = 4 has higher voltage gain compared to the proposed converter with n = 2. For the duty cycles
higher than 0.57, the proposed converter with n = 2 has higher voltage gain in comparison with the converters in the literatures. As can
be seen from Table 1, the proposed converter with n = 2 and n = 3
uses higher number of components compared to other competitors. However, the voltage gain of the proposed converter is higher
and the structure is simple. The voltage gain in the transformer
based solutions can be increased by transformer turns ratio (N).
However, using high-voltage transformers with a large turns ratio
introduces several problems such as leakage inductance and the
parasitic capacitance formed by the secondary winding of the transformer, which causes voltage and current spikes and increases loss
and noise that can signicantly degrade the system performance
and damage circuit components. Although active clamp circuit can
be used to recover the leakage energy, but the circuit complexity
will be increased.
The per unit (based on the output voltage Vo ) voltage across
switch Q can be calculated as below:
(24)
It can be seen from Eq. (24) that increasing DCL unit number will result in higher voltage gains. Table 1 shows a comparison
between the proposed transformerless converter and some transformer based converters in the literature in the case of voltage gain
and component number. It should be noticed that n is the stages
number for the proposed converter and N is the transformer turn
ratio for the transformer based converters in the literature. The
voltage gain (M) of the competitors versus duty cycle (d) is shown
in Fig. 5. As can be seen the proposed converter with n = 3 has the
highest voltage gain of all. For the duty cycles lower than 0.57 the
70
60
Voltage gain (M)
iDo1
iD
50
40
30
20
10
0
0.1
0.2
0.3
0. 4
0. 5
0. 6
0.7
0.8
0.9
iL1
75
nVC1 VCo1
(n 1) L1
Vg
L1
I L1
t
DTS
TS
where ig,1 is the input current during rst time interval and is given
by:
Ig = niL1 + iL1,on + Io
(33)
iL1 = IL1 = 1
TS
=
dTS
(d+d2 )TS
iL1,1 dt +
iL1,2 dt
iL1 = IL1 = 1
TS
1
(27)
(d + d2 )TS IL1,Peak
(28)
(29)
Vg
dTS
L1
(30)
Substituting Eqs. (26) and (30) in Eq. (28), the average value of
inductor current is calculated as:
MDCM + 1
MDCM (2n + 1)
(31)
1
TS
TS
ig dt =
0
1
TS
(32)
ig,1 dt
0
(2n + 1) +
4(n + 1)d2
(2n + 1) +
K
(35)
2L1
RL TS
(36)
(37)
IL1,Peak
Vg dTS
=
2
2L1
(38)
Writing the charge balance of capacitor Co1 and after some simplication, IL1 can be determined as:
IL1 =
2
2
Io = Io
1d
d
(39)
Substituting Eqs. (38) and (39) into Eq. (37) and considering Eq.
(36), upper limit for parameter K will be obtained as follows:
K<
dTS
Vg
t
L1
d2 Ts Vg
=
2L1
1
=
2
MDCM
iL1 = IL1
K=
Thus:
iL1 (t) =
dTS
1
(Surface of triangle)gure,7
TS
(34)
dd
(40)
2 VVgo
iL1
K < Kcrit =
nVC1 VCo1
(n 1) L1
Vg
L1
(d
d 2 )TS
(41)
t
dTS
dd
2(2n + 1 + d)
Kcrit =
(42)
76
Fig. 9. Kcrit curves (a) Kcrit versus d and n, (b) Kcrit for {n = 2}.
Kcrit . For specic value of {n = 2} the curve is shown in Fig. 9(b). For
K < Kcrit , converter operates in DCM, otherwise in CCM.
According to aforementioned descriptions DCM is reachable
by one of the following selections: load current, inductances of
inductors and switching frequency. The maximum value of Kcrit is
occurred at the following duty cycle:
dm =
(3 + 6n) +
(3 + 6n)2 + 8(2n + 1)
4
(43)
IL (1 d)TS
C1
(49)
2Io
C1 fS
(50)
VC VC,max
Considering Eqs. (51) and (52) and writing load currents versus
output voltage and load resistance, minimum values of capacitors
are obtained:
iL1
= Vg
dTS
(44)
dVg
fs iL1,max
(45)
2V
o
VC,max
RL fS
(52)
(53)
VC =
Io dTS
Co
(54)
Thus:
Co =
Lmin,BC
C1
(51)
(46)
dIo
VCo fS
(55)
VCo Vo,Max
VC =
IC t
Q
=
C
C
(47)
(48)
Co
dIo
Vo,Max fS
(56)
(57)
77
Bode Diagram
20
I IPS
RLF
Magnitude (dB)
10
I CS
LF
-10
LF=3e-6 (H); RLF=5e-3 (Ohm)
CF=400e-6 (F); RCF=20e-3 (Ohm)
-20
RCF
I Q ,ON
dTS
CF
TS
fS
-30
20 KH
-40
-1
10
10
(a)
10
Frequency (kHz)
10
(b)
Fig. 10. Input lter, (a) lter circuit, (b) bode plot.
shorten battery and fuel cell life span. As a result, an input lter
is needed to suppress high frequency components. The input lter
circuit is shown in Fig. 10(a). The transfer function of the lter in
Laplace domain is obtained as below:
H(S) =
RCF CF S + 1
LF CF S 2 + (RCF + RLF )CF S + 1
Besides output power is shared between the phases and the total
power losses is reduced that leads to higher efciencies.
5. Real gain of the proposed converter using actual models
of the components
(58)
In which RCF and RLF are the ESR values of the lter. Bode plot of
the lter is shown in Fig. 10(b). It is clear that the high frequency
components are suppressed effectively by the low pass lter.
According to Fig. 10(a) the switching frequency component of
the converter side current is attenuated by 22 dB. By using of Fourier
analysis the fundamental component of the converter side current
(ICS1 ) can be written as below:
2n + d + 1
where:
IQ,ON
IQ,ON
=(
sin 2d) cos(t) + {
[1 cos(2d)]} sin(t) (59)
A1 =
A2 =
ICS1
IQ,ON =
MCCM
Io
d
(60)
IIPS
= 10(Mag |dB )/20
ICS1
(61)
Module 1
Module 2
1d
4n + d + 3
2n + d + 1
1 A1
1 + A2 + A3
VFD
Vg
(62)
2n + 2
VCo1 =
Vo Vg + VFd
(2rC + rd )Vo
+
2
RL d(1 d)
(63)
Module m
Fig. 11. IPOP technique.
78
70
60
50
Case 1: Blue curve
Case 2: Red curve
Case 3: Black curve
40
30
20
10
0
0.2
0.4
0.6
0.8
D
Fig. 12. Calculated real voltage gain versus duty cycle.
Co3
Co1
Ln 1
Cn
Dn1
Ig
Vg
C2
D21
Fig. 15. Power circuits of the proposed converter with: (a) {n = 2} (b) {n = 3}.
VC3
L3 VL2
Vo
Co4
RL
Do1 Do2
VC 2
L2 VL2
D11
VCo1
VCn
n stages
C3
D31
VL n 1
Io
L
Dx1 Dx 2
C1
VC1
L1 VL1
D12
D22
D32
Dn2
VCo2
Co2
Fig. 13. Extension of the proposed converter.
and the per unit value of the voltage stress across switch Q (VQ,pu )
are obtained as below:
M=
Vo
(2n + 1) + (2 + n)D
=
Vg
1D
VQ,pu =
(64)
j =
M+1
M(d + 2)
(65)
L1 Lj
L1 Lj
Vg dTS
(66)
i Lj
ILj = IL1 +
dTS j
Surface of hatched area
= IL1 +
TS
2TS
100
I Lj
VQ [V]
i L1
I L1
dTS (1-d)TS
Fig. 14. Effect of individual inductance mismatch on current waveforms.
0.0
0.000
0.100
0.200
0.300
0.400
(67)
ILj =
d2 Vg
2Io
+
1d
2fS
L1 Lj
14.0
IQ (CSC)
(68)
L1 Lj
0.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
IPSC
79
CSC1
CSC2
0.60000
0.60020
Fig. 17. Simulation results of CSC and IPSC for the converter of Fig. 15(a).
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.60020
(a)
0.60000
IPSC
0.60000
0.60020
(b)
Fig. 18. Simulation results of the IPOP structure, (a) modules currents, (b) total modules currents and ltered IPSC.
Fig. 19. Experimental results of the IPOP structure (a) rst module switch current (CSC1) (2 A/Div), (b) second module switch current (CSC2) (2 A/Div), (c) ltered IPSC
(2 A/Div), (d) ripple content of IPSC (0.1 A/Div).
80
Fig. 20. Experimental results of the proposed converter (Fig. 15(a)) with d = 0.6 in CCM, (a) output voltage and the voltage across switch Q, (b) input current, (c) inductor
current and its ripple content, (d) capacitor C1 current (1A/Div), (e) capacitor Co1 current (0.5 A/Div).
respectively. Power supply, switching condition and load are specied as below:
Vg = 10 V, d = 0.6 , RL = 288 , fS = 20 KHz
Capacitors and inductors are designed based on {n = 2}. According to Eq. (62) the voltage gain of the proposed converter {n = 2} is
12. Thus the output voltage will be 120 V. The load current in proposed converter is 0.4166 A. According to Eq. (39), the average value
of the inductor current is obtained 2.08 A. Considering 5.5% ripple
in inductor currents, minimum value of the inductors will be 2.6
(mH) according to (45). Assuming 0.1 (V) ripple in the voltages of
stages capacitors, minimum values of these capacitors will be 400
(f) by using of (52). Also with the same allowable voltage ripple for
output voltage, according to Eq. (57), the output ltering capacitor
will be 280 (f). The component parameters of the proposed converter prototype are summarized in Table 2. It should be noticed
that, the used elements in the IPOP structure (except the input lter
parameters) are the same as that of one module. Fig. 16 shows the
transient voltage across switch Q. As can be seen the voltage spike
at transient state is not very large. Fig. 17 shows the simulation
results of the converter side current (CSC) and the ltered input
power source current (IPSC) for the converter of Fig. 15(a). The
ripple magnitude of the ltered current is approximately 0.6 (A).
Simulation and experimental results of the IPOP structure with two
modules of the converter of Fig. 15(a) are shown in Figs. 18 and 19,
Specication
50 (W)
10 (V)
20 KHz
2.6 mH
460 F
280 F
3 H, 220 F
1 H, 20 F
respectively. The CSC ripple is lower comparing to use one converter module. Therefore a smaller lter (LF = 1 H, CF = 20 F) is
used to cancel out high frequency ripples. The ripple magnitude of
the ltered current is approximately 0.25 (A). As can be seen the
simulation and experimental results match each other fairly.
Fig. 20 shows the experimental results of the proposed converter
(Fig. 15(a)) in CCM with {n = 2}. According to Eq. (24), the ideal voltage gain without the parasitic components consideration is 140 (V).
However, the parasitic components have signicant effects on the
voltage gain according to Eq. (62) that yields 120 (V) output voltage and it is consistent with the experimental results of Fig. 20(a).
The voltage across the switch is nearly 66 (V), according to Eq. (25)
(Fig. 20(a)). It should be noticed from Fig. 20(e) and Fig. 20(d) that
81
Fig. 21. Experimental results of the proposed converter (Fig. 15(a)) with d = 0.6 in BCM, (a) inductor current and its average value, (b) output voltage.
Fig. 22. Experimental results of the proposed converter (Fig. 15(a)) with d = 0.6 in DCM, (a) inductor current and its average value, (b) output voltage.
82
Fig. 23. Experimental results of the output voltage and the voltage across switch Q for the proposed converter (Fig. 15(b)) with (a) d = 0.4, (b) d = 0.5, (c) d = 0.6.
Fig. 24. Simulation and Experimental results of the proposed converter considering 23% mismatch in inductances L1 and L2 , (a) Simulation results with both DC and ripple
contents, (b) Experimental results with only ripple contents (20 mA/Div).
83
Fig. 25. Measured efciency of the proposed converter (Fig. 15(a)) with, (a) Vg = 10 (V), (b) Vg = 15 (V).
Fig. 26. Measured efciency of the proposed converter (Fig. 15(b)), (a) Vo = 120 (V), (b) Vg = 15 (V).
9. Conclusion
This paper proposed a generalized structure for DCDC converters which used n stages of DCL units at the input stage. With
increasing of the n, it was possible to achieve higher voltage gains.
In the other words, it was possible to obtain the proposed voltage gain with lower values of duty cycles compared to the custom
DCDC converters in literatures. Three regions of operation named
as CCM, BCM and DCM have been investigated in detail for the
proposed converter. The main disadvantage of the proposed converter is that with higher stages number, the switch Q current stress
would be increased that deteriorate the converter efciency at high
power levels. However, it was shown that using IPOP technique
the converter could be applied for higher power application due
to efciency improvement. Another disadvantage of the proposed
converter is that for higher voltage gain, more passive components
should be used. However, the circuit structure is simple and generalization of the converter will be achieved easily. Finally simulation
and experimental results conrmed the correctness of carried analysis.
References
[1] E. Babaei, M.E.S. Mahmoodieh, H.M. Mahery, K.I. Hwu, Y.T. Yau, Operational
modes and output-voltage-ripple analysis and design considerations of buckboost DCDC conveters, IEEE Trans. Ind. Electron. 59 (1) (2012) 381391.
[2] H.M. Mahery, E. Babaei, Mathematical modeling of buck-boost dc-dc converter and investigation of converter elements on transient and steady state
responses, Int. J. Elec. Power 44 (2013) 949963.
[3] M. Sarhangzadeh, S.H. Hosseini, M.B.B. Sharian, G.B. Gharehpetian, Multiinput
direct DC-AC converter with high-frequency link for clean power-generation
systems, IEEE Trans. Power Electron. 26 (6) (2011) 17771789.
[4] F. Nejabatkhah, S. Danyali, S.H. Hosseini, M. Sabahi, S.M. Niapour, Modeling and
control of a new three-input DCDC boost converter for hybrid PV/FC/Battery
power system, IEEE Trans. Power Electron. 27 (5) (2012) 23092324.
[5] P. Sethakul, S. Rael, B. Davat, P. Thounthong, Fuel cell high power applications,
IEEE Ind. Electron. Mag. 3 (1) (2009) 3246.
[6] B.R. Lin, J.J. Chen, Analysis and implementation of a soft switching converter
with high-voltage conversion ratio, IET Power Electron. 1 (3) (2008) 386394.
[7] J. Leyva-Ramos, M.G. Ortiz Lopez, L.H. Diaz Salierna, J.A. Morales Saldana,
Switching regulator using a quadratic boost converter for wide DC conversion
ratios, IET Power Electron. 2 (2) (2009) 605613.
[8] Q. Zhao, F.C. Lee, High efciency, high step-up DCDC converters, IEEE Trans.
Power Electron. 18 (1) (2003) 6573.
[9] Y.P. Hsieh, J.F. chen, T.J. Liang, L.S. Yang, A novel high step-up DCDC converter
for a microgrid system, IEEE Trans. Power Electron. 26 (4) (2011) 11271136.
[10] W. Li, W. Li, X. He, D. Xu, B. Wu, General derivation law of nonisolated high-stepup interleaved converters with built-in transformers, IEEE Trans. Ind. Electron.
59 (3) (2012) 16501661.
[11] T.J. Liang, J.H. Lee, S.M. Chen, J.F. Chen, L.S. Yang, Novel isolated high-stepup DCDC converter with voltage lift, IEEE Trans. Ind. Electron. 60 (4) (2013)
14831491.
[12] H.W. Seong, H.S. Kim, K.B. Park, G.W. Moon, M.J. Youn, High step-up DCDC
converters using zero-voltage switching boost integration technique and lightload frequency modulation control, IEEE Trans. Power Electron. 27 (3) (2012)
13831400.
[13] S. Dwari, L. Parsa, An efcient high step-up interleaved dc-dc converter with a
common active clamp, IEEE Trans. Power Electron. 26 (1) (2011) 6678.
[14] H.L. Do, Improved ZVS DCDC converter with a high voltage gain and a ripplefree input current, IEEE Trans. Circuits Syst. I 59 (4) (2012) 846853.
[15] B. Axelrod, Y. Berkovich, A. Ioinovici, Hybrid switched-capacitor Cuk/Zeta/SEPIC
converters in step-up mode, in: Proceedings of IEEE International Symposium
on Circuits Systems, Kobe, Japan, May 2326, 2005, pp. 0131, 3.
[16] E.H. Ismail, M.A. Al-Saffar, A.J. Sabzali, A.A. Fardoun, A family of single-switch
PWM converters with high step-up conversion ratio, IEEE Trans. Circuits Syst.
I 55 (4) (2008) 11591171.
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