PD - 9.

1383A

IRFP064N
HEXFET Power MOSFET
l
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Advanced Process Technology

Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Fully Avalanche Rated

VDSS = 55V
RDS(on) = 0.008

ID = 110A
S

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.

TO-247AC

Absolute Maximum Ratings

ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Parameter

Max.

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew

110
80
390
200
1.3
20
480
59
20
5.0
-55 to + 175

Units
A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.24

0.75

40

C/W

8/25/97

IRFP064N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Q gs
Qgd
t d(on)
tr
t d(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
55

2.0
42

Typ.

0.057

14
100
43
70

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

5.0

LS

Internal Source Inductance

13

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

4000
1300
480

V(BR)DSS
V(BR)DSS/T J

I GSS

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.008

VGS = 10V, ID = 59A

4.0
V
VDS = VGS , ID = 250A

S
V DS = 25V, I D = 59A
25
VDS = 55V, VGS = 0V
A
250
VDS = 44V, VGS = 0V, TJ = 150C
100
V GS = 20V
nA
-100
VGS = -20V
170
ID = 59A
32
nC VDS = 44V
74
VGS = 10V, See Fig. 6 and 13

VDD = 28V

I D = 59A
ns

RG = 2.5

RD = 0.39, See Fig. 10

D
Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

S

VGS = 0V

pF
VDS = 25V

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD
t rr
Q rr

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge

Min. Typ. Max. Units

110

390

110
450

1.3
170
680

V
ns
nC

Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25C, IS = 59A, VGS = 0V
TJ = 25C, IF = 59A
di/dt = 100A/s

Notes:

Repetitive rating; pulse width limited by

Pulse width 300s; duty cycle 2%.

max. junction temperature. ( See fig. 11 )

VDD = 25V, starting TJ = 25C, L = 190H

RG = 25, IAS = 59A. (See Figure 12)

I SD 59A, di/dt 290A/s, VDD V(BR)DSS ,

TJ 175C

Uses IRF3205 data and test conditions

Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4

IRFP064N
1000

1000

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP

I , D ra in -to -S o u rc e C u rre n t (A )
D

I , D ra in -to -S o u rce C u rre n t (A )

D

TOP

100

4.5 V
2 0 s PU LSE W ID TH
TC = 2 5C

10
0.1

10

100

4.5V

100

0.1

V D S , D rain-to-S ource V oltage (V )

R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )

I D , D r ain- to-S ourc e C urre nt (A )

2.0

TJ = 2 5 C
TJ = 1 7 5 C
100

10

V DS = 2 5 V
2 0 s P U L SE W ID TH
5

V G S , Ga te-to-S o urce V oltage (V )

Fig 3. Typical Transfer Characteristics

10

100

Fig 2. Typical Output Characteristics

1000

V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics

20 s P UL SE W IDTH
TC = 17 5C

10

10

I D = 98 A

1.5

1.0

0.5

V G S = 10 V

0.0
-60 -40 -20

20

40

60

80

100 120 140 160 180

T J , Junction T emperature (C)

Fig 4. Normalized On-Resistance

Vs. Temperature

IRFP064N
20

V GS
C iss
C rss
C oss

7000

C , C a p a c ita n c e (p F )

6000

=
=
=
=

0V,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd

V G S , G a te -to -S o u rc e V o lta g e (V )

8000

I D = 5 9A
V DS = 44 V
V DS = 28 V
V DS = 11 V

16

C i ss

5000

12

C os s

4000
3000
2000

C rs s

1000
0

A
1

10

FO R TES T C IR CU IT
SEE FIG U R E 13

0
0

100

60

90

120

150

180

Q G , Total Gate Charge (nC )

V D S , Drain-to-Source V oltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

1000

O PER ATION IN TH IS AR EA LIM ITE D

BY R D S(o n)
10s

I D , D ra in C u rre n t (A )

IS D , R e ve rs e D ra in C u rre n t (A )

30

TJ = 175 C

100

T J = 2 5C

100
1 00s

1m s
10
10m s

VG S = 0 V

10
0.6

1.0

1.4

1.8

2.2

2.6

3.0

T C = 25 C
T J = 17 5C
S ing le Pulse

1
1

A
10

V S D , Source-to-D rain V oltage (V )

V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

100

IRFP064N
VDS

120

VGS

LIMITED BY PACKAGE

RD

D.U.T.

RG

100

ID , Drain Current (A)

- VDD

80

10V
Pulse Width 1 s
Duty Factor 0.1 %

60

Fig 10a. Switching Time Test Circuit

40

VDS
90%
20

0
25

50

75

100

125

TC , Case Temperature

150

175

( C)

10%
VGS
td(on)

Fig 9. Maximum Drain Current Vs.

Case Temperature

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

D = 0.50

0.20
0.1

0.01
0.00001

0.10
PDM

0.05

t1
0.02
0.01

t2

SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFP064N
L
VDS
D.U.T.
RG

+
-

VDD

IAS

10 V

tp

0.01

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp
VDD

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)

1200

TO P
1000

B OTTO M

ID
24 A
4 2A
59 A

800

600

400

200

VD D = 2 5V

0
25

50

75

100

125

150

175

VDS

Starting T J , Junction Temperature (C)

IAS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

12V

.2F
.3F

10 V
QGS

D.U.T.

QGD
VGS

VG

3mA

IG

Charge

Fig 13a. Basic Gate Charge Waveform

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

+
V
- DS

IRFP064N
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

Driver Gate Drive

P.W.

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Period

D=

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

ISD

IRFP064N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -

3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )

1 5 .90 (.6 2 6)
1 5 .30 (.6 0 2)
-B -

0 .25 (.0 1 0) M

D B M

-A 5 .5 0 (.2 1 7 )

2 0 .3 0 (.80 0 )
1 9 .7 0 (.77 5 )

2X
1

5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
4

NOT ES :

5. 50 (.2 17 )
4. 50 (.1 77 )

1 DIME NSIO NING & TO LERAN CING

PE R AN SI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
T O-247-A C.

3
-C -

1 4.8 0 (.5 8 3 )
1 4.2 0 (.5 5 9 )

2 .4 0 (.09 4 )
2 .0 0 (.07 9 )
2X
5 .45 (.2 1 5)
2X

4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )

0 .8 0 (. 03 1 )
3 X 0 .4 0 (. 01 6 )

1 .4 0 (.0 56 )
3 X 1 .0 0 (.0 39 )
0 .25 (.0 10 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )

C A S

2.6 0 (.10 2 )
2.2 0 (.08 7 )

LEAD AS SIGN MENT S

1
2
3
4

G ATE
DRAIN
SO URCE
DRAIN

Part Marking Information

TO-247AC
E X AM PL E : T H IS I S A N IR F1 010
E XAM P LE
: HT HAISS SISE MB
A N LY
IR FP E3 0
W IT
IT H
MB L Y
L OT WCO
D EAS9SE
B1M
L O T C O D E 3 A1 Q

I NT E RN A TIO N AL
IN TER N AT IO N AL
R E C TIF IE R
R EC T IF IER
LLOG
O G OO

IRIRF
F PE10
3 010

9246
3 A19B
Q 9 310 2M

A SSBELMB
A S SEM
Y LY
L O TLOTC O DCEOD E

P AR
T N
M B ER
P AR
T U NU
M BE R

D A TE C OD E
D A TE C O D E
(Y YW W )
(Y YW W )
Y Y = YE A R
YY = YE A R
W W = W EE K
W W W EE K

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http://www.irf.com/
Data and specifications subject to change without notice.
8/97

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/