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N-Channel
PowerTrench
tm
MOSFET
Description
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been espe-
Application
RoHS compliant
G DS
TO-220
FDP Series
Parameter
VGSS
Units
V
20
164*
116*
ID
Drain Current
IDM
Drain Current
- Pulsed
EAS
dv/dt
(Note 1)
656
(Note 2)
670
mJ
3.0
V/ns
(Note 3)
(TC = 25oC)
268
1.79
W/oC
-55 to +175
oC
300
oC
Ratings
Units
PD
Power Dissipation
TJ, TSTG
TL
Ratings
75
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
Thermal Characteristics
Symbol
Parameter
RJC
0.56
RCS
0.5
RJA
62.5
oC/W
www.fairchildsemi.com
March 2008
Device Marking
FDP047N08
Device
FDP047N08
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
BVDSS
/ TJ
75
0.02
V/oC
IDSS
500
IGSS
100
2.5
3.5
4.5
3.7
4.7
150
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Forward Transconductance
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
7080
9415
pF
870
1155
pF
410
615
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
100
210
ns
147
304
ns
220
450
ns
114
238
ns
117
152
nC
37
nC
32
nC
164
ISM
656
VSD
1.25
trr
45
ns
Qrr
66
nC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.21mH, IAS = 80A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP047N08 Rev. A
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*Notes:
1. VDS = 20V
2. 250s Pulse Test
ID,Drain Current[A]
100
ID,Drain Current[A]
500
10
100
o
175 C
o
25 C
10
o
-55 C
*Notes:
1. 250s Pulse Test
o
2. TC = 25 C
1
0.002
1
3
0.01
0.1
1
VDS,Drain-Source Voltage[V]
500
0.005
VGS = 10V
0.004
VGS = 20V
0.003
100
o
175 C
o
25 C
10
*Notes:
1. VGS = 0V
*Note: TC = 25 C
0.002
0
100
200
300
ID, Drain Current [A]
1
0.2
400
8000
Coss
4000
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
FDP047N08 Rev. A
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.4
Ciss
0
0.1
10
12000
Capacitances [pF]
0.006
RDS(ON) [],
Drain-Source On-Resistance
4
5
6
VGS,Gate-Source Voltage[V]
VDS = 15V
VDS = 37.5V
VDS = 60V
2
*Note: ID = 80A
0
1
10
VDS, Drain-Source Voltage [V]
30
20
40
60
80
100
Qg, Total Gate Charge [nC]
120
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RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 10mA
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 80A
0.5
-100
200
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
1000
150
100s
100
1ms
10ms
DC
10
30s
*Notes:
120
90
60
Limited by package
1. TC = 25 C
30
2. TJ = 175 C
3. Single Pulse
0
25
0.1
1
10
VDS, Drain-Source Voltage [V]
100
50
75
100
125
150
o
TC, Case Temperature [ C]
175
1
0.5
0.1
0.2
0.05
t1
t2
0.02
0.01
0.01
*Notes:
o
Single pulse
1E-3
-5
10
FDP047N08 Rev. A
PDM
0.1
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
10
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FDP047N08 Rev. A
www.fairchildsemi.com
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
10V
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
VDD
VSD
Body Diode
Forward Voltage Drop
FDP047N08 Rev. A
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Mechanical Dimensions
TO-220
FDP047N08 Rev. A
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx
Build it Now
CorePLUS
CROSSVOLT
CTL
Current Transfer Logic
EcoSPARK
EZSWITCH *
PDP-SPM
Power220
POWEREDGE
Power-SPM
PowerTrench
Programmable Active Droop
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
SMART START
SPM
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
FPS
FRFET
Global Power ResourceSM
Green FPS
Green FPS e-Series
GTO
i-Lo
IntelliMAX
ISOPLANAR
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MillerDrive
Motion-SPM
OPTOLOGIC
OPTOPLANAR
tm
Fairchild
Fairchild Semiconductor
FACT Quiet Series
FACT
FAST
FastvCore
FlashWriter *
tm
SupreMOS
SyncFET
TinyBoost
TinyBuck
TinyLogic
TINYOPTO
TinyPower
TinyPWM
TinyWire
SerDes
UHC
Ultra FRFET
UniFET
VCX
* EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.
2.
Product Status
Definition
Advance Information
Formative or In Design
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
FDP047N08 Rev. A
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