Si4800BDY

Vishay Siliconix

N-Channel Reduced Qg, Fast Switching MOSFET

FEATURES

PRODUCT SUMMARY
VDS (V)

RDS(on) ()

30

ID (A)

0.0185 at VGS = 10 V

0.030 at VGS = 4.5 V

Halogen-free According to IEC 61249-2-21

Available

TrenchFET Power MOSFET

High-Efficient PWM Optimized
100 % UIS and Rg Tested

SO-8
S

Top View
S
Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free)
Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

25

Continuous Drain Current (TJ = 150 C)a, b

TA = 25 C
TA = 70 C

Continuous Source Current (Diode Conduction)a, b

Single-Pulse Avalanche Energy
Maximum Power Dissipationa, b

IS
L = 0.1 mH
TA = 25 C
TA = 70 C

2.3
15

EAS

11.25

mJ

2.5

1.3

1.6

0.8

TJ, Tstg

Operating Junction and Storage Temperature Range

5.0
40

IAS

PD

V
6.5

7.0

IDM

Pulsed Drain Current (10 s Pulse Width)

Avalanche Current

ID

Unit

- 55 to 150

W
C

THERMAL RESISTANCE RATINGS

Limits
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)

Symbol
t 10 s
Steady State
Steady State

RthJA
RthJF

Typ.

Max.

40

50

70

95

24

30

Unit
C/W

Notes:
a. Surface Mounted on FR4 board.
b. t 10 s.

Document Number: 72124

S-83039-Rev. H, 29-Dec-08

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Si4800BDY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter

Symbol

Test Conditions

Min.
0.8

Typ.

Max.

Unit

Static
VGS(th)

VDS = VGS, ID = 250 A

1.8

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

VDS = 30 V, VGS = 0 V, TJ = 55 C

On-State Drain Currenta

ID(on)

Gate Threshold Voltage

Drain-Source On-State Resistancea

Forward Transconductancea
Diode Forward Voltage

RDS(on)

VDS 5 V, VGS = 10 V

30

A
A

VGS = 10 V, ID = 9 A

0.0155

0.0185

VGS = 4.5 V, ID = 7 A

0.023

0.030

gfs

VDS = 15 V, ID = 9 A

16

VSD

IS = 2.3 A, VGS = 0 V

0.75

1.2

8.7

13

S
V

Dynamicb
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

Turn-On Delay Time

Rise Time
Turn-Off Delay Time

VDS = 15 V, VGS = 5.0 V, ID = 9 A

3.5
0.5

td(on)
tr
td(off)

Fall Time

tf

Source-Drain Reverse Recovery Time

trr

nC

1.5

VDD = 15 V, RL = 15
ID 1 A, VGEN = 10 V, Rg = 6
IF = 2.3 A, dI/dt = 100 A/s

1.4

2.2

15

12

20

32

50

14

25

30

60

ns

Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 72124

S-83039-Rev. H, 29-Dec-08

Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
40

40
VGS = 10 thru 5 V
35

4V

TC = - 55 C
35
25 C
30
I D - Drain Current (A)

I D - Drain Current (A)

30
25
20
3V
15
10

25
125 C
20
15
10
5

0
0.0

0
0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

VGS - Gate-to-Source Voltage (V)

VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

Output Characteristics
1200

0.040

C - Capacitance (pF)

R DS(on) - On-Resistance ()

1000
0.032
VGS = 4.5 V
0.024
VGS = 10 V
0.016

Ciss

800

600

400
Coss

0.008

200
Crss
0

0.000
0

10

15

20

25

30

16

20

VDS - Drain-to-Source Voltage (V)

ID - Drain Current (A)

Capacitance

On-Resistance vs. Drain Current

1.8

6
VDS = 15 V
ID = 9 A

1.6
RDS(on) - On-Resistance
(Normalized)

V GS - Gate-to-Source Voltage (V)

12

VGS = 10 V
ID = 9 A

1.4

1.2

1.0

0.8

0
0

Qg - Total Gate Charge (nC)

Gate Charge
Document Number: 72124
S-83039-Rev. H, 29-Dec-08

10

0.6
- 50

- 25

25

50

75

100

125

150

TJ - Junction Temperature (C)

On-Resistance vs. Junction Temperature

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Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
0.06
50

r DS(on) - On-Resistance ()

I S - Source Current (A)

0.05

TJ = 150 C
10

0.04
ID = 9 A
0.03

0.02

0.01
TJ = 25 C
1
0.0

0.00
0.2

0.4

0.6

0.8

1.0

1.2

10

VGS - Gate-to-Source Voltage (V)

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.4

150

0.2

0.0
Power (W)

V GS(th) Variance (V)

120
ID = 250 A

- 0.2

90

60

- 0.4

30

- 0.6

- 0.8
- 50

- 25

25

50

75

100

125

0
10-3

150

10-2

TJ - Temperature (C)

10-1

10

Time (s)

Single Pulse Power, Junction-to-Ambient

Threshold Voltage
100
Limited
by R DS(on)*

I D - Drain Current (A)

10
1 ms

10 ms

0.1

100 ms
1s
10 s

TC = 25 C
Single Pulse

DC

0.01
0.1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum V GS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

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Document Number: 72124

S-83039-Rev. H, 29-Dec-08

Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
Notes:

0.1
PDM

0.1
0.05

t1
t2
1. Duty Cycle, D =

0.02

t1
t2

2. Per Unit Base = R thJA = 70 C/W

3. T JM - TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01
10-4

10-3

10-2

10-1
1
Square Wave Pulse Duration (s)

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
0.1
0.1
0.05
0.02

Single Pulse
0.01
10-4

10-3

10-2
10-1
Square Wave Pulse Duration (s)

10

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72124.

Document Number: 72124

S-83039-Rev. H, 29-Dec-08

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5

Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

E
1

h x 45

C
0.25 mm (Gage Plane)
A

All Leads
q

A1

0.004"

MILLIMETERS

INCHES

DIM

Min

Max

Min

Max

1.35

1.75

0.053

0.069

A1

0.10

0.20

0.004

0.008

0.35

0.51

0.014

0.020

0.19

0.25

0.0075

0.010

4.80

5.00

0.189

0.196

3.80

4.00

0.150

0.101 mm

1.27 BSC

0.157
0.050 BSC

5.80

6.20

0.228

0.244

0.25

0.50

0.010

0.020

0.50

0.93

0.020

0.037

0.44

0.64

0.018

0.026

ECN: C-06527-Rev. I, 11-Sep-06

DWG: 5498

Document Number: 71192

11-Sep-06

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Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028

0.022

0.050

(0.559)

(1.270)

0.152

(3.861)

0.047

(1.194)

0.246

(6.248)

(0.711)

Recommended Minimum Pads

Dimensions in Inches/(mm)
Return to Index

APPLICATION NOTE

Return to Index

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Document Number: 72606

Revision: 21-Jan-08

Legal Disclaimer Notice

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Revision: 13-Jun-16

Document Number: 91000