x-3

A PRACTICAL

MICROWAVE TRAVELLING-WAVE
GATE MIXER

Tang

O.S.A.

and

C.S.

MESFET

Atchison*,

Department
of Electronics,
Chelsea
College,
Pulton
Place,
London SW6 5PR, U.K.
*now with
ERA Technology
Ltd,
Leatherhead,

London

University

Surrey,

U.K.

Abstract
The theoretical
analysis
of Travelling-Wave
(Distributed)
Mixing
is briefly
described.
Experimental
verification
on a 2-section
design,
comparing
theoretical
and measured
results
is presented for
the first
time.
The tradeoffs
between
circuit
variables
are briefly
explained.
It exhibits
around
4dB of conversion
loss
over the signal
fre
an I.F.
auency band from below
2GHz to IOGHZ for
;f

ed

Lmg and

into

bond

wire

has

developed.

been

MESFET

bias
signal
and 0.8

points

ternatives

to

conventional

diode

mixers

monic

al-

because

curve
to

gin(t)

oscillator
conditions
illustrated

proposed

by

the

authors(1)

ob-

nding

jectives

of

this

paper

prin-

cher.

ciple

practically

generalized
given

and
theory

in

are
to

for

to

demonstrate

describe

hybrid

main
the

briefly

design

than

The
into

path

pendent

that

been

Wave
is

based

cation
Traveling
form

on

Wave

using

500hms
ed

to

input
in
be

mixer

single

matically
yield
large

the
principle
The unilateral

(4).

the

gate

and

output

Fig.

1.

under
local

in

MESFETS
lines

distributed

distributed
simplified

realised

dominant

mixing
signal

of

is

dsi,
Cgs
non-linearities

separate
umed that
path are
while

are

used

0.8

IDSS).

The

at 0.3
The bias

and

variation

D.C.

Fast

their
of

the

component

amplitude

Fourier

frequency
of

under

Ist

har-

Rds(t)

different
saturation
4 respect-

on

of

non-ideal
Rds

gate

improved

in

presence
is

assumed
to
The analytical

remove

these

The

complete

theoretical

in

a future

paper

mixer

not

be

grOu-laundenow

has

approximations.
so

will

only

the

Gain
formula
of an n-section

approximately

take

linearly
mcldel

analysis

and

Conversion
gain,
G,
is

did

10SSY
&d$
to microstrip

coaxial

bias.
to

(1)

L mg,

given

be

salient

are

given
Traveling

here.

by

A*(fRF)

C(f RF,fLo,flF)

2 v(fm,fLo,flF)

Re(ZDT(flF))

Zint(fRF)

Re(Zin~(fW))

sche-

gmi

of

illustrated
are
(2)

assumthat

and where
* represents
complex
number,
and

of the
especially

of

total

voltage

complex
concerns

across

the

conjugate
with
the

gate

that

of a
share

appears

?(fRF,fLO,f~F)
represents
the
effectcontributions
from
each
of the
. . current
current
generator
of the
FET,
while
ZDT(fIF)
and
Zin(fw)
are
input
impedances
illustrated
in Fig.1.
Finally,
~(fw,fLO,fIF)
deals
with
the
effects
of
reflections
In the
two artificial
transmission
lines
.

and in which
case
two
It
is asswill
be required.
losses
in the
source
grounding
into
Rgsi
and Rmdr in Fig.
1,
are

the

the
A(fm)

::;sFcgs.

mixer
configuratwideband
dirwith
if
dual
gate

inductances

the

hybrid

the
modulation
effect
oscillator
(L.O.)
and

parasitic

signal

circuit
Fig.
2.

fitting

instead,

gate
lines
resistive
absorbed

associated

amplifimodel
of

consisting

and

NEC

mixing

discrete

and

gmi in the
case
of a single
gate
ion
considered
here.
The external
ectional
coupler
can be dispensed
MESFETS

or

parts
of the
The conversion
of

and

evaluate

presented

the

Moreover,

a more

Theory
concept

the
L.O.

inside
the
current
in Fig.
3 and Fig.

analysis

account

given

the

of

ively.

(l).

Essentially,

IDSS

The

and

local

The

re-

Cgs and Rds is measured

by D.C.
and low frequency
characteriz--

Spline

gate
bias
region
is

1984.

effective

drain

large

equivalent
depicted
in

applied

they
offer
conversion
gain
instead
of conversion
loss .
However,
until
now,
only
narrow
band
MESFET
resonant
mixers
have
been
reported.
In an attempt
to make a truly
wide-band
MESFET mixer,
the
concept
of Traveling
Wave or Distributed
Mixing
was
in

under

(0.3

components.
of

with

gm,

are

spectrum
useful

and

model

chip

bilateral
T.DSS is

Cubic

ation.
Transform

Introduction
are

the

gate

It
is based
on D.C.
and low
frequency
(2MHz)
characterization,
as well
as small
signal
2 to
18GHz S-parameters
measurements
at two

dependence
of
I-V
characteristics

(2),(3)

represent
the

non-linear

GaAs

small
IDSS

mixers

in

A simplified
NE 71000

different

MESFET

which

spectively.

I.;GHz.

Microwave

~d,

Inductances

We have

absorb-

explored

in

(1)

that

the

main

dis

605
0149-645X f85/0000

0605

$01.00@

19851EEE

1985 IEEE

MTT-S

Digest

advantages

of

MESFETS

gate

resistive

the
drop
in characteristic
higher
section
attenuation
as

the

number

pires
istic
loading
the

of

sections

is

as

gate

ties

line.

such

However,

increased.

for

as

reducing

the

a given

cases

where

of

fCG

relationship

in

tending

the

reducing

the

quency

end

degradation
by

frequency

resistive
of

the

of

more

demonstrate
2-section

at

Gain

line

in

not

to

but

be

developed.
500hm
nal

able

gate

and

coupler,

Alumina

substrate.

ployed
lumped

to simulate
capacitors

low

impedance

25~m

Gold

wideband
to ground

microstrip

was provided
holes
filled

was

drive

The variation
of conversion
frequency
for
a constant
I.F.
A conversion
loss
in Fig.
5.
was

demonstrated
11.5GHz

of

6dBm L.O.
the
lowest
covering
range.

from
L.O.),

drive
figure
such

2 to
under

level.
reported

the

signal

frequency

band
level

ary

results

come

IOGHZ

of

-0.5V

gate

wires

were

sion
2 to
ed

in

if

that
the

value.

5.

I.F.
For

gain
of +0.5dB
IOGHZ of R.F.
Fig.

the

The

in

frequency.

em-

port,

al

coupler

of

predict

the

because

Fig.
in

phenomena

Firstly,
drain

the

6.

L.O.
fall

two

the
theory.
result
if

The
of

greater

at

the

forward

I.F.

of

+5dBm

output

than

L.O.

removed

biased

point

around

an
L.O.

and

with

this

port

23dB

leakage
design

with

lldBm

6dBm

of

exhibits

while

frequency

(or

bias

L.O.

a re-

S11

of

with

the

direction-

of

input

the

in-

power
this
mixer
pro-

anticipated.

of

agree

a practical
well

2section

with

theoretical

Marconi

and

ersidad

Politecnica

discussions

is
for
also

Carlos

made
their
like

to

Marconi

support
to thank

Camacho-Penalosa
de

Madrid

Defence
of this
work.
A.E.
Ward of

of

(Spain)

the
for

Univ
helpful

References

(1)

O.S.A.
Tang and C.S.
Aitchison,
A
Distributed
MESFET Mixer
Conference
ings
of the
14th
European
Microwave
Belgium,
Sept.
1984.

(2)

R.A.

Pucel,

of GaAs
MTT-24,

L.O.

(3)

be-

certain

G.K.
Tie
associated
MESFET

a measured
conver(+0.5dB)
was demonstrated
from
for
an I.F.
of
IOMHZ,
as depictphenomenon

and

Acknowledgement
Systems
Ltd.,
U.K.
The authors
would

frequency

below

data

given

Wave Mixing
has been
devel-

Acknowledgements

and

and

are

predictions

3.5

is

reduced

is

of Traveling
hybrid
design

Performance

design

to be
mixers

this

bias

performance

A general
theory
for
discrete

oped.

signal
shown
dB

conversion

this

at

Superior

adopted

grounding
via-

Prelimingain
will

of

loss

put

example,

cause

lldBm

measured

in

Conclusion

while
using

R.F.

is believed
wideband

gate

signal

in
will

compression

level.

on

with
predicted
results
is
discrepancies
beyond
10GHz
to internal
feedback
effects
well
as parasitic
feedback
Source
grounding,
which
are

optimum

each

show

positive

frequency

under

at

ldB

gress.

not
accounted
for
in the
theory.
If
we are
to
attach
greater
importance
to maximum
achievable
gain
than
flatness
of characteristic,
then
the
loss
reduces
further
to 3(+1.5,
0.5)dB
over
the
same
drive

to

lldBm

to

shown

theory

Source
drilled
paint.

bandwidth

Good agreement
observed.
The slight
were
attributed
mainly
inside
the
MESFET,
as
due to unsatisfactory

fails

above

nominally
an exter-

loss
with
of
1.5GHz
is
of 4(+1,-0.5)

This
for

up

and

is

is displayed
in Fig.
7.
In the
light
of the
experience
gained
in
practical
exercise,
the
design
of a 4-section
employing
4 MESFETS as well
as the
investigation
of the
noise
characteristics
are
currently
in

proposed
in hy-

lumped
inductors
were
realized

lines.

calculated

power

observed

typically

turn

fabricated

bond

by two ultrasonically
with
silver
loaded

are

applied

verify

and

L.O.

theory

Gain

The

design.

the
design
comprises
lines
together
with

drain

directional

easily

is

The

occurs

The

Verification

to

agreement

fre-

the
concept
and theory
design
has been
realized

Hence,

parasitic

and investigated.
gate
losses,
external

of

with

of the
shunting
effect
of
resistance
across
CgsS.

and

compensated

the

circuit

voltage
swings
beyond
the
current
saturation
region.
Secondly,
with
even
higher
L.0,
power,
the
gate
line
turns
from
an LCR line
to an LR line
because

band
must
ex-

high

be

variation
Gain

power.

form,
employing
two NEC NE71OOO GaAs MESFET
.
As a first
attempt,
our primary
goal
is
to design
one with
the maximum
performance
in

mind,

to

Good

of
an

band.

can

sections

the

the

operating

Experimental
To
a simple

of

loading
required

Conversion

employing

A typical
Conversion

large

employed
and the
required
operating
to relatively
high
frequency,
resort
to reducing
Ro,
in the
interests
of
cutoff

various

identified
internal
FET

have
been
neglected
abrupt
drop
in Rds

Cgs are
extends
be made

final

Cg.s

Conversion

relatively

of

gate
bond
wire
inductance
and losses
in the
Source
grounding
path
are
the
dominant
sources
of gain
reduction
especially
towards
the
high
frequency
end
of the
operating
band.

TRo~gs

with

investigation.

effects

also
independently
In particular,

MESFETS

under
The

characterpenal-

bandwidth

the

CG
in

value

the
d.c.
significant

final

the
line.
For
example,
ideal
lossless
line
is

brid
chips

still

are

well
as
frequency
It
trans-

that
by increasing
the
gate
line
characterimpedance,
the
ill-effects
of resistive
gate
can be minimized
within
the
passband
Of_

of a chosen
MESFET,
increasing
istic
impedance
~
will
incur

:0

loading

impedance
near
cutoff

the

(4)

is

606

13th

D.

Masse

and

MESFET Mixers
at
No.6,
June
1976.

R.

Mixer

European

Germany,
Sept.
W.S.
Percival,
British
Patent

Performance

X-Band

IEEE

of

Noise
Figure
a Microwave

and C.S.
Aitchison,
Conversion
Gain
Gate

Bera,

Microwave
Proceed
Conference,

Trans.

Conference
Proceedings
Microwave
Conference,

1983.
Thermionic
460562,
1937.

Valve

Circuits,

and
of

West

.-tie

riwd

hslf-section

Launc

hex

Launcher

r+-=

,_

L--+

.. . . .

rf -

D=

~ 2

50

ohm

line

for

50

ohm

sat.

line,

[xp.n.

nti.l

Taper

. ,.
. . ..,.

of FETn

Drain
line

for

non-

50 ohm

gat>linq-

---

--,

L
,
gf

l:=

Lb

=;

zin

,=

!;

9s

gs

50Q

3 1
-4

Gate of

Gate of FETI

Launcher

z 77

R
Qs

:7

External

Directional

w
gs

Launcher

FETn

Coupler

FIG

Equivalent
canprises

Circuit
of a Travelli~
of 50 ohm input
Gate

realized
Mixer
50 ohm output

Wave
and

Line

in

discrete

Drain

Line

hybrid
( IX

o.31d~s 081d~s

Source
FIG

2(2

to

18 GHz)small

signal

computer

N~C .NE71000 C@P

optumzed

equivalent

circuit

Bias

NE[ NE71OOO
Bias

LO Amplitude
0.

in Volts

I
00

FIG

01

.>

03

0.

05

0.

3 Variation
of the
Transconductance

0,

0,

0,

JO

I I

1~

IS

magnitudes
of Conversion
with
LO Amplitude

607

form

circuits

and
not,

shown)

3200-

3000-

2800

2600-

v~~=3v

Local
Oscillator
Orive

240Q

--

2200

--

- -0.5V

-0.7V

V$Bias

= +6d Bm

Vg~ Bias z -0,5v

21Z10
-;Ma

c
.

)500

.-

1400

.-

82mZT

Ofllz

1=300
600

~y

.00

LO Amplitude

>02
9.

0, 4

9.2

0.5

m5

0..

FIG 4 Variation

of

~ds

0.6

with

in Volts

0.?
9. a
LQ Amplitude

9..

1.9

t.,

1.2

Local Oscillator

Frequency

in GHz

46ijl;~

FIG

2I

o---:--

-2

+.,_

~--l-->

10

12

of input
port
Ul Frequency

.1

RF in GHz

7 Variation
S11 with

10

LO Ori~e in dB~

m
u
-2

.-c

-~,7<..
~

G
.&o.

measured
calculated
IF = 1.5 GH.z
JgsBias = -05v
~L
LO Drive =+6dBm

.:
E

. measured
IF= IO MHZ

-14

Vgs Bias=- 07V

LO Orwe .+9dBm

1/

FIG

5.OGHZ RF

2+
.,3

-18[

\
5 Variation
signal

of
RF

Conversion

Gain

with

FIG 6 Variation
Level

608

of

Conversion

Gain

with

LO Drive

12