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POWER ELECTRONICS
Lecture 2a: Power Semi-Conductor Diodes
(Chapter :2 )
10/5/2016
Lecture Outline
Semi Conductor Basics
Diodes
Ideal & Reverse Recovery Characteristics
Connecting diodes in a cct.
In terms
of Electrical
Copper,
Silver,
Gold,
into Aluminium
three Groups
Properties Materials
Materials
Conductors
Conduct electric
current
Valence electrons are
loosely bounded to
the parents atom
SemiBetween
conductor
Conductors
and insulator
wood
Silicon,
Germanium,
can be classified
Carbon
Insulators
Does not conduct
electric current
Valence electrons are
bounded tightly to
the parents atom
Intrinsic or Pure
Semiconductor
extrinsic or impure
or Doped
Semiconductor
N-Type SC P-Type SC
+ive
-ive
Majority
carriers Majority
carriers
Charged
charged
Electrons
Holes
Diodes
A semiconductor diode is formed with
pieces of N and P-type material are
joined.
The P material is called the anode.
The N material is called the cathode.
The resulting structure is called a PN
junction.
A PN junction (or diode) is a switch or
component through which electrons will
flow easily in one direction but not in
the opposite direction.
To represent the diode in schematic
diagrams, we use the symbol shown on
the right.
The pn Junction
p-type
n-type
anode
cathode
metal
silicon oxide
doped silicon
wafer (chip)
n>>p
excess electrons diffuse
to the p-type region
- +
- +
- +
n>>p
excess electrons diffuse
to the p-type region
DEPLETION REGION:
p~0, and acceptor ions
are exposed
-
Zero Bias
p>>n
voltage,
V(x)
~0.7 volts
(for Si)
- +
- +
- +
n>>p
Forward Bias
p>>n
- +
- +
- +
n>>p
vD
Reverse Bias
p>>n
- +
- +
- +
n>>p
Breakdown
p>>n
- +
- +
- +
n>>p
Ideal-Diode Model
* We may apply Ideal-Diode Model to simplify the analysis:
(1) in forward direction: short-circuit assumption, zero voltage drop;
(2) in reverse direction: open-circuit assumption.
* The ideal-diode model can be used when the forward voltage drop and reverse currents
are negligible.
12
Properties of Diodes
The Shockley Equation
The trans-conductance curve is characterized by the following equation:
ID = I0(eVD/VT 1)
ID is the current through the diode, Io is the
saturation current and VD is the applied
biasing voltage. VT is the thermal equivalent voltage
and is approximately 26 mV at room temperature.
The equation to find VT at various temperatures is:
VT = kT
q
k = 1.38 x 10-23 J/K
T = temperature in Kelvin
q = 1.6 x 10-19 C
is the emission coefficient for the diode.
It is determined by the way the diode is constructed.
Vt = 0.7 V at 250C
Green=Elevated T(250C+T ) Vt=0.7-V
Forward bias
Vt = 0.7-V at (250C+T)
-V
Io
Reversed bias
-i
0.7-V 0.7
VD
Example 1
Assume the diode is a low-power diode with a forward resistance
value of 5 ohms. The barrier potential voltage is still: V = 0.3 volts
(typical for a germanium diode) Determine the value of ID if VA = 5
volts.
RS = 50
ID
VA
+
_
RS = 50
ID
VA
+
_
RF
Example 2
For the circuit shown below evaluate the unknown quantities
Example 3
Analyze the circuit using ideal diode model
Assignment 1
Plot the V-I characteristic of germanium diode. Represent
graphically the effect of temperature in forward & reverse biased
region.
submissiOn date :
6th OctOber ,2016
Example 2.1
trr=Reverse recovery
time
IRR=Max(Peak) reverse
current
ta= charge
tb
Short
circuit
Increase
reverse
capabilities (HVDC-T)
blocking
Is = Is1+IR1 = Is2+IR2
IR1 = VD1/R1
IR2 = VD2/R2 = VD1/R2
Is1+VD1/R1 = IS2+VD1/R2
Let R = R1 = R2
Is1 + VD1/R = Is2 +VD2/R
VD1 + VD2 = Vs
Example 4
Is1 = 30mA, Is2 = 35mA
VD = 5kV
(a) R1=R2=R=100k,
find VD1 and VD2
(b) Find R1 and R2 for
VD1=VD2=VD/2
Is1 = 30mA
Is2 = 35mA
R 1 = R 2 = R = 100k
-VD = -VD1 - VD2
VD2 = VD - VD1
VD1
VD2
Is1 +
= Is2 +
R
R
VD R
VD1 =
+ (IS2 - IS1 )
2
2
5kV 100k
VD1 =
+
(3510 -3 - 3010 -3 ) = 2750Volts
2
2
VD2 = VD - VD1 = 5kV - 2750 = 2250Volts
Is 1 = 3 0 m A
Is 2 = 3 5 m A
VD
VD 1 = VD 2 =
= 2 .5 k V
2
V
V
Is 1 + D 1 = Is 2 + D 2
R1
R2
R2 =
VD 1
VD 2R 1
- R 1 (I s 2 - I s 1 )
R1 = 100k
R2
R2
2 .5 k V 1 0 0 k
=
2 .5 k V - 1 0 0 k (3 5 1 0 -3 - 3 0 1 0 -3 )
= 125k
Example 5
V S 5 kV
I S 1 30 mA
I S 2 35 mA
Parallel-Connected Diodes
End Problems
End Problems
2.1,2.2,2.3,2.4,2.5,2.6