Analog IC Design Lab

16MVD0070

Task 5:
Design of Differential Amplifiers
I.
Objective:
To design and calculate different parameters of Differential Amplifier with
different types of load connections
1) Resistive load
( gain = 17 )
2) Diode connected load ( gain = 17 )
3) Current source load
( gain =20 )
4) Active load
( gain = 20 )
II.

Design Parameters:
Technology used gpdk090
Transistor used
nmos1v_hvt, pmos1v_hvt

1.a) Differential Amplifier with resistive load

Design Parameters:
1

Analog IC Design Lab

16MVD0070

Vdd:
1.8V
Vsin 1:(Vin 1)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
0;
AMPLITUDE:
10mv;
FREQUENCY:
1KHz;
Vsin 2:(Vin2)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
180;
AMPLITUDE:
-10mv;
FREQUENCY:
1KHz;
NMOS1 (W/L ) = (3u/141n);
NMOS2 (W/L ) = (3u/141n);
R=
120K Ohms;
SCHEMATIC:

Simulation Output:

Analog IC Design Lab

16MVD0070

Gain:
17.0412dB
Wgc:
20 GHz
Frequency at 3dB: 2.2 GHz
PM:
123.65 deg
VOLTAGE SWING:
Vout MAX:
671 mV
Vout MIN:
529 mV
Vsw:
142 mV

1.b) Differential Amplifier with resistive load, constant current

biasing with mosfet
Design Parameters:
3

Analog IC Design Lab

16MVD0070

Vdd:
1.8V
Vsin 1:(Vin 1)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
0;
AMPLITUDE:
10mv;
FREQUENCY:
1KHz;
Vsin 2:(Vin2)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
180;
AMPLITUDE:
-10mv;
FREQUENCY:
1KHz;
NMOS1 (W/L ) = (3u/141n);
NMOS2 (W/L ) = (3u/141n);
Constant current Biasing mosfet
NMOS3 (W/L) = (120n/50n);
Vgs = 536.51 mV;
R=

120K Ohms;

SCHEMATIC:

Analog IC Design Lab

16MVD0070

Simulation Output:

Gain:
17.0383dB
Wgc:
20.3025 GHz
Frequency at 3dB: 2.21772 GHz
PM:
124.14966 deg
VOLTAGE SWING:
Vout MAX:
671.1 mV
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Analog IC Design Lab

16MVD0070

Vout MIN:
529.1 mV
Vsw:
142 mV

2. Differential Amplifier with diode connected load

Design Parameters:
Vdd:
1.8V
Vsin 1:(Vin 1)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
0;
AMPLITUDE:
10mv;
FREQUENCY:
1KHz;
Vsin 2:(Vin2)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
180;
AMPLITUDE:
-10mv;
FREQUENCY:
1KHz;
NMOS1 (W/L ) = (3u/141n);
NMOS2 (W/L ) = (3u/141n);
Constant current Biasing mosfet:
NMOS3 (W/L) = (120n/50n);
Vgs = 577.847 mV;
Diode connected load:
PMOS1(W/L) = (120n/620n);
PMOS1(W/L) = (120n/620n);

SCHEMATIC:

Analog IC Design Lab

16MVD0070

Simulation Output:

Analog IC Design Lab

16MVD0070

Gain:
17.0134 dB
Wgc:
13.4755 GHz
Frequency at 3dB: 1.67133 GHz
PM:
111.23176 deg
VOLTAGE SWING:
Vout MAX:
472.8 mV
Vout MIN:
332.6 mV
Vsw:
140.2 mV

3. Differential Amplifier with current source load

Design Parameters:

Analog IC Design Lab

16MVD0070

Vdd:
1.8V
Vsin 1:(Vin 1)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
0;
AMPLITUDE:
10mv;
FREQUENCY:
1KHz;
Vsin 2:(Vin2)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
180;
AMPLITUDE:
-10mv;
FREQUENCY:
1KHz;
NMOS1 (W/L ) = (3u/180n);
NMOS2 (W/L ) = (3u/180n);
Constant current Biasing mosfet:
NMOS3 (W/L) = (120n/50n);
Vgs = 577.847 mV;
Current source load:
PMOS1(W/L) = (120n/620n);
PMOS1(W/L) = (120n/620n);
Vg = 250 mV;

SCHEMATIC:

Analog IC Design Lab

16MVD0070

Simulation Output:

10

Analog IC Design Lab

16MVD0070

Gain:
20.1849 dB
Wgc:
21.7298 GHz
Frequency at 3dB: 1.71617 GHz
PM:
122.57383 deg
VOLTAGE SWING:
Vout MAX:
971.2 mV
Vout MIN:
768.9 mV
Vsw:
202.3 mV

4.a) Differential Amplifier with Active load

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Analog IC Design Lab

16MVD0070

Design Parameters:
Vdd:
1.8V
Vsin 1:(Vin 1)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
0;
AMPLITUDE:
10mv;
FREQUENCY:
1KHz;
Vsin 2:(Vin2)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
180;
AMPLITUDE:
-10mv;
FREQUENCY:
1KHz;
NMOS1 (W/L ) = (3u/180n);
NMOS2 (W/L ) = (3u/180n);
Iss = 23.9172u A
Current source load:
PMOS1(W/L) = (120n/620n);
PMOS1(W/L) = (120n/620n);
Schematic:

Simulation Output:

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Analog IC Design Lab

16MVD0070

Gain:
21.5972 dB
Wgc:
7.95995 GHz
Frequency at 3dB: 743.362 MHz
PM:
284.005 deg
VOLTAGE SWING:
Vout MAX:
649.2 mV
Vout MIN:
247.2 mV
Vsw:
402 mV

4. b) Differential Amplifier with Active load and constant

current biasing with mosfet:
Design Parameters:
13

Analog IC Design Lab

16MVD0070

Vdd:
1.8V
Vsin 1:(Vin 1)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
0;
AMPLITUDE:
10mv;
FREQUENCY:
1KHz;
Vsin 2:(Vin2)
DC VOLTAGE:
500mV;
AC MAGNITUDE:
10mv;
AC PHASE:
180;
AMPLITUDE:
-10mv;
FREQUENCY:
1KHz;
NMOS1 (W/L ) = (3u/180n);
NMOS2 (W/L ) = (3u/180n);
Constant current Biasing mosfet:
NMOS3 (W/L) = (120n/50n);
Vgs = 577.847 mV;
Active load:
PMOS1(W/L) = (120n/620n);
PMOS1(W/L) = (120n/620n);

Schematic:

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Analog IC Design Lab

16MVD0070

Simulation Output:

Gain:
Wgc:

21.125dB
7.97224 GHz
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Analog IC Design Lab

16MVD0070

Frequency at 3dB: 796.605 MHz

PM:
283.994 deg
VOLTAGE SWING:
Vout MAX:
634.7 mV
Vout MIN:
251.4 mV
Vsw:
383.3 mV

Conclusion:
The Gain, Gain cross over frequency Wgc, Frequency at 3dB below max
gain value, Phase Margin and Output voltage swing has been calculated.
The gain of the different circuits are,
1.a) Differential Amplifier with resistive load
=
17.0412 dB
1.b) Differential Amplifier with resistive load,
constant current biasing with mosfet
=
17.0383 dB
2. Differential Amplifier with diode connected load =
17.0134 dB
3. Differential Amplifier with current source load
=
20.1849 dB
4.a) Differential Amplifier with active load
=
21.125 dB
4.b) Differential Amplifier with active load,
constant current biasing with mosfet
=
21.5972 dB

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