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Objective specification
PINNING - TO220AB
PIN
DESCRIPTION
main terminal 1
main terminal 2
gate
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
600D
600E
600F
600
800E
800F
800
8
65
8
65
A
A
BTA208BTA208BTA208VDRM
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
IT(RMS)
ITSM
PIN CONFIGURATION
SYMBOL
tab
T2
tab
T1
1 23
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
IT(RMS)
ITSM
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
CONDITIONS
MIN.
-
over any 20 ms
period
Storage temperature
Operating junction
temperature
MAX.
-600
6001
UNIT
-800
800
65
72
21
100
A
A
A2s
A/s
2
5
5
0.5
A
V
W
W
-40
-
150
125
C
C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/s.
October 1999
Rev 1.200
Philips Semiconductors
Objective specification
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
60
2.0
2.4
-
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
IGT
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- G-
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- G-
IH
Holding current
VT
VGT
On-state voltage
Gate trigger voltage
ID
TYP.
BTA208-
MAX.
UNIT
...D
...E
...F
5
5
5
10
10
10
25
25
25
mA
mA
mA
15
25
25
20
30
30
25
40
40
mA
mA
mA
VD = 12 V; IGT = 0.1 A
15
25
30
mA
IT = 10 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 C
VD = VDRM(max);
Tj = 125 C
0.25
1.3
0.7
0.4
1.65
1.5
-
V
V
V
0.1
0.5
mA
MIN.
TYP.
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA208VDM = 67% VDRM(max);
Tj = 110 C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 110 C;
IT(RMS) = 8 A;
dVcom/dt = 20v/s; gate
open circuit
...D
MAX.
UNIT
...E
...F
30
60
70
V/s
1.8
3.5
4.5
A/ms
A/ms
dVD/dt
dIcom/dt
dIcom/dt
3.5
4.5
5.5
tgt
ITM = 12 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/s
Rev 1.200
Philips Semiconductors
Objective specification
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
2,54 2,54
0,6
2,4
October 1999
Rev 1.200
Philips Semiconductors
Objective specification
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
October 1999
Rev 1.200