SOLA3540/ 9001: Applied Photovoltaics

(SEMESTER 1 2011)

TOPIC TEST - EXAMPLE

TIME ALLOWED 45 MINUTES
NUMBER OF QUESTIONS - 2
TOTAL MARKS AVAILABLE 20

Question 1. (10 marks)

(a)

Describe semiconductor doping. A silicon wafer is doped with phosphorous (P).

Explain how a P atom can donate an electron to the conduction band. Discuss the
effect of temperature, the bonding arrangement of the P atom in the Si crystal, the
energy level of a donated electron before and after ionisation.

4 marks

(b)

An array of photovoltaic modules is being installed on the roof of a house in Sydney

(latitude 34S, longitude 151E).
(i) Calculate the solar noon altitude on 21 June.
(ii) Calculate the tilt angle of the module at which solar radiation is would be the
maximum.

3 marks

(c)

A silicon solar cell of area 100 cm2 has a VOC = 600 mV and an ISC = 3.3 A at 300K
under 1-sum (1 kW/m2) illumination. Assuming the cell is ideal calculate:
(i) The dark saturation current density, J0 , of the cell.
(ii) The ISC of the cell under 10-suns illumination.
(iii) The VOC of the cell under 10-sun illumination.

3 marks

Question 2. (10 marks)

(a)

Briefly discuss three important aspects of solar cell design that affect solar cell
efficiency.

3 marks

(b)

Derive an expression for the fractional power loss due to lateral current flow in the
diffused top layer of a silicon solar cell.

4 marks

(c)

A commercial cell has a top n-layer sheet resistivity of 35 /square and gives its
maximum power output at a voltage of 420 mV and a current density of 28 mA/cm2.
If the finger spacing is 3 mm, calculate the fractional power loss due to lateral current
flow in the top layer.

3 marks

Appendix
Equation

2hc 2

nkT VMP

ln
VMP VOC
1
q nkT / q

1
hc
exp
1
kT

FF

hc

E hf
E (eV )

1.24

E T 4 AM

( m)

PM VMP I MP

Pin
Pin

EQE ne / n ph

1
cos z

s
AM 1
h

OC ln( OC 0.72)
VOC
, OC
OC 1
nKT / q

SR

I SC
q ne
q ne
q

EQE
PIN ( ) E phn ph hc n
hc
ph

Eg 0

I 0 BT exp
kT

d 81360
;
365

sin

23.45

F _ Sth 90 ( d )

dVOC Vg 0 VOC (kT / q )

dT
T
1 dFF 1 dVOC 1

6
FF dT
V
dT
T
OC

F _ Nth 90 ( d )
sin s cos cos cos sin sin
sin cos cos sin cos
cos s
cos s

PM RS (VMP I MP RS ) I MP
RCH

VOC
I SC

RS
RCH

15(hour 12)

rS

EOT 9.87 sin 2 7.53 cos 1.5 sin

PM RS PM (1 rs )

360
hour 12
NDY 81

365
24

S S

sin( )
sin( )

I 1.3661 0.7 ( AirMass

0 .6 7 8

LST LCT 4( L Lzone) E DS

G Ne ax

FFs FF0 (1 rs )
rSH

RSH
RCH

FFSH FF0 1
r
SH

q (V IRS ) V IRS
I I L I 0 exp
1
nkT
RSH


C PV
i
S 1 (1 i ) n

I I 0 exp qV nkT 1

COE

I I L I 0 exp qV nkT 1

d1 0 / 4n1

VOC

nkT I L
ln 1
q
I0

n1 n0 n2
n1 sin 1 n2 sin 2

Rb

bW

Ploss

s / t
s

J 2b s S 3
24

Pgen VMP J MPbS / 2

1
dx
0 ( x)

Pfrac

Ploss s S 2 J MP

Pgen
12VMP

qV / N
I tot MI L MI 0 exp tot
1
nkT

V
ln 2 I

NOCT 20
TCELL TAIR
S
800

Constants:
Physical Value

Symbol SI

CGS

eV

Exact Decimal

Acceleration of Gravity

9.8 m s-2

Speed of Light

3.00x108 m s-1

3.00x1010 cm s-1

Plancks Constant

6.63x10-34 J s

6.63x10-27 erg s

4.14x10-15 eV s

6.6260755

Boltzmanns Constant

1.38x10-23 J K-1

1.38x10-16 erg K-1

8.62x10-5 eV K-1

1.3806513

Electron Mass

me

9.11x10-31 kg

9.11x10-28 g

9.1093897

e or q 1.60x10-19 C

4.80x10-10 esu

1.60217733

1.60x10-12 erg

Electric Charge

2.99792458

Electron Volt

eV

1.60x10-19 J

Permittivity Constant

8.85x10-12 F m-1

8.85418781762

Permeability Constant

1.26x10-6 H m-1

1.25663706143

T (K) = T (C) + 273.15 [K]

conversion from Celsius to Kelvin

Energy Conversion:
1 eV
1 kWh
1 Calorie

=
=
=

-19

1.6010
3.6 MJ
4.1868 J

Properties of Water
3

1000 [kg/m ]
1.0 [kg/litre]
1.0 [g/cm3]
4.18 [J/(gC)]
18 [g/mol]

1eV

density of water
density of water
density of water
heat capacity of water
molecular weight of water

SI Prefixes:
n (nano)10-9,
m (milli)10-3,
k (kilo) 103,
G (giga) 109,
P (peta)1015,

(micro)10-6,
c (centi) 10-2,
M (mega) 106,
T (tera) 1012,
E (exa) 1018

Properties of Air
1.2 [kg/m3]
1.05 [J/(g-C)]
Volumetric
1 m3 = 1000 litres
1 litre = 1000 cm3

density of air
heat capacity of air