Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Cgb (gate-to-body)
Cgs(gate-to-source)
Cgd (gate-to-drain)
In processes below about 0.35 m that employ shallow trench isolation surrounding
transistors with an SiO2 insulator the sidewall capacitance along the nonconductive
trench tends to be minimal, while the sidewall facing the channel is more
significant. In some SPICE models, the capacitance of this sidewall abutting the gate
and channel is specified with another set of parameters:
The drain diffusion has a similar parasitic capacitance dependent on AD, PD, and
Vdb. Equivalent relationships hold for pMOS transistors, but doping levels differ.
As the capacitances are voltage-dependent, the most useful information to digital
designers is the value averaged across a switching transition.
Example
Calculate the diffusion parasitic Cdb of the drain of a unit-sized contacted NMOS
transistor in a 65 nm process when the drain is at 0 V and again at VDD = 1.0 V.
Assume the substrate is grounded. The transistor characteristics are CJ = 1.2 fF/m2,
MJ = 0.33, CJSW = 0.1 fF/m, CJSWG = 0.36 fF/m, MJSW = MJSWG = 0.10, and
= 0.7 V at room temperature.
The area is 0.0125 m2 and perimeter is 0.35 m plus 0.1 m along the channel.
Point A in Fig. shows the operating point of the MOSFET prior to switching for
VDD = 5 V. After switching takes place, the operating point moves to point B
and follows the curve Vgs = VDD down to ID = 0 and VDS = 0, point C. At this
point, the NMOS switch is on.
For the PMOS device, the transconductance parameter, KP, is three times
smaller than the NMOS's KP so we can write
Scale Factor
we do layout to a generic scale factor. If, for example, the
minimum device dimensions are 50 nm (= 0.05 m =50 x 109m), then an n-well box drawn 10 by 10, see Fig, has an actual
size after it is fabricated of 10* 50 nm or half a micron (0.5 um
= 500 nm),
where W is the drawn width of the devices. Practically, to model the effects of
increasing switching resistance when L is greater than 1 (minimum), we can re-write Eq