FDPF035N06B PDF

FDPF035N06B
N-Channel PowerTrench MOSFET

60 V, 88 A, 3.5 m
Features
Description
RDS(on) = 2.91 m ( Typ.) @ VGS = 10 V, ID = 88 A
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been tailored to minimize the on-state resistance while maintaining
superior switching performance.
Low FOM RDS(on)*QG

Low Reverse Recovery Charge, Qrr
Soft Reverse Recovery Body Diode
Enables Highly Efficiency in Synchronous Rectification
Fast Switching Speed
Applications
100% UIL Tested
Synchronous Rectification for ATX / Server / Telecom PSU
RoHS Compliant
Battery Protection Circuit

Motor Drives and Uninterruptible Power Supplies
Renewable System
D
G
D
S
TO-220F
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Pulsed
Unit
V
20
88
62
(Note 1)
352
(Note 2)
600
mJ
6.0
V/ns
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds
TL
FDPF035N06B_F152
60
- Derate Above 25oC
46.3
0.31
W/oC
-55 to +175
oC
300
oC
FDPF035N06B_F152
Unit
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
3.24
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
2013 Fairchild Semiconductor Corporation

FDPF035N06B Rev. C1
oC/W
www.fairchildsemi.com
FDPF035N06B N-Channel PowerTrench MOSFET
November 2013
Part Number
FDPF035N06B_F152
Top Mark
FDPF035N06B
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.

Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
60
0.03
V/oC
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain to Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 A, VGS = 0 V
VDS = 48 V, VGS = 0 V
IGSS
Gate to Body Leakage Current
VGS = 20 V, VDS = 0 V
100
nA
ID = 250 A, Referenced to 25 C
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 A
Static Drain to Source On Resistance
2.91
3.5
gFS
Forward Transconductance
VGS = 10 V, ID = 88 A
VDS = 10 V, ID = 88 A
176
Dynamic Characteristics
-
6035
8030
pF
1685
2240
pF
55
pF
2619
pF
76
99
nC
29
nC
12
nC
5.2
67.3
nC
VDS = 30 V, VGS = 0 V
92.4
nC
f = 1 MHz
2.0
32
74
ns
33
76
ns
56
122
ns
23
56
ns
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss(er)
Energy Related Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Miller Charge
Vplateau
Gate Plateau Volatge
Qsync
Total Gate Charge Sync.
VDS = 0 V, ID = 50 A
Qoss
Output Charge
ESR
Equivalent Series Resistance (G-S)
VDS = 30 V, VGS = 0 V,
f = 1 MHz
VDS = 30 V, VGS = 0 V
VDS = 30 V, ID = 100 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 30 V, ID = 100 A,
VGS = 10 V, RG = 4.7
(Note 4)
Drain-Source Diode Characteristics

IS
Maximum Continuous Drain to Source Diode Forward Current
88
ISM
Maximum Pulsed Drain to Source Diode Forward Current
352
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 88 A
1.25
trr
Reverse Recovery Time
71
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 100 A,

dIF/dt = 100 A/s
78
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 20 A, starting TJ = 25C.
3. ISD 100 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.

FDPF035N06B Rev. C1
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
200
*Notes:
1. VDS = 10V
2. 250s Pulse Test
100
10
*Notes:
1. 250s Pulse Test
o
2
0.1
2. TC = 25 C
ID, Drain Current[A]
ID, Drain Current[A]
100
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
VDS, Drain-Source Voltage[V]
25 C
10
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
10
-55 C
175 C
3
4
5
6
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
3.5
200
IS, Reverse Drain Current [A]
RDS(ON) [m],
Drain-Source On-Resistance
100
VGS = 10V
3.0
VGS = 20V
2.5
175 C
25 C
10
*Notes:
1. VGS = 0V
2.0
*Note: TC = 25 C
0
50
100
150
200
ID, Drain Current [A]
250
1
0.2
300
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1000
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Ciss
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
1.4
10
10000
100
2. 250s Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1
10
VDS, Drain-Source Voltage [V]

FDPF035N06B Rev. C1
Crss
60
VDS = 12V
VDS = 30V
VDS = 48V
*Note: ID = 100A
0
20
40
60
Qg, Total Gate Charge [nC]
80
90
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
1.8
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250A
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.6
1.4
1.2
1.0
*Notes:
1. VGS = 10V
2. ID = 88A
0.8
0.6
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current

vs. Case Temperature
1000
100
100
80
10
Operation in This Area
is Limited by R DS(on)
VGS = 10V
100s
1ms
10ms
100ms
DC
SINGLE PULSE
o
TC = 25 C
0.1
60
40
20
TJ = 175 C
RJC = 3.24 C/W
RJC = 3.24 C/W
0.01
0.1
1
10
VDS, Drain-Source Voltage [V]
0
25
100
Figure 11. Eoss vs. Drain to Source Voltage
200
100
IAS, AVALANCHE CURRENT (A)
2.5
EOSS, [J]
175
Figure 12. Unclamped Inductive

Switching Capability
3.0
2.0
1.5
1.0
0.5
0.0
50
75
100
125
150
o
TC, Case Temperature [ C]
10
20
30
40
50
VDS, Drain to Source Voltage [V]

FDPF035N06B Rev. C1
TJ = 25 oC
10
1
0.001
60
TJ = 150
0.01
0.1
oC
10
100
1000
tAV, TIME IN AVALANCHE (ms)
Typical Performance Characteristics (Continued)
Typical Performance Characteristics (Continued)

Figure 13. Transient Thermal Response Curve
JC
o
ZJC
(t), Thermal
Response
Thermal
Response
[Z [ ]C/W]
4
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
PDM
t1
*Notes:
0.1
t2
o
1. ZJC(t) = 3.24 C/W Max.

2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.02
-5
10
-4
10
-3
-2
10
10
-1
10
t1Rectangular
, Rectangular Pulse
Pulse Duration
Duration[sec]
[sec]

FDPF035N06B Rev. C1
IG = const.
Figure 14. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms

FDPF035N06B Rev. C1
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDPF035N06B Rev. C1
Driver
VGS
( Driver)
VGS
(DUT)
VDD
VRG
RG
t
10V
t
DUT
Qsync =
VGS
1
VR ( t ) dt
RG G
Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms

FDPF035N06B Rev. C1
VCC
Mechanical Dimensions
Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Takcheong
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-0A3

FDPF035N06B Rev. C1
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
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Product Status
Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
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Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FDPF035N06B Rev. C1
10
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FDPF035N06B

N-Channel PowerTrench MOSFET

RDS(on) = 2.91 m ( Typ.) @ VGS = 10 V, ID = 88 A

Low FOM RDS(on)*QG

100% UIL Tested

Synchronous Rectification for ATX / Server / Telecom PSU

Battery Protection Circuit

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Drain to Source Voltage

Gate to Source Voltage

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

- Continuous (TC = 25oC, Silicon Limited)

- Continuous (TC = 100oC, Silicon Limited)

Operating and Storage Temperature Range

- Derate Above 25oC

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

2013 Fairchild Semiconductor Corporation

FDPF035N06B N-Channel PowerTrench MOSFET

Electrical Characteristics TC = 25oC unless otherwise noted.

Drain to Source Breakdown Voltage

Gate to Body Leakage Current

Gate Threshold Voltage

VGS = VDS, ID = 250 A

Static Drain to Source On Resistance

Reverse Transfer Capacitance

Energy Related Output Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain Miller Charge

Gate Plateau Volatge

Total Gate Charge Sync.

Equivalent Series Resistance (G-S)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0 V, ISD = 100 A,

2013 Fairchild Semiconductor Corporation

FDPF035N06B N-Channel PowerTrench MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current[A]

ID, Drain Current[A]

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

IS, Reverse Drain Current [A]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

VGS, Gate-Source Voltage [V]

2. 250s Pulse Test

2013 Fairchild Semiconductor Corporation

FDPF035N06B N-Channel PowerTrench MOSFET

Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation