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CHAPTER 6
FREQUENCY RESPONSE
TERMINOLOGY
Midband
1.
XC =
3.
1
0
2fC
At f = 0 Hz,
XC =
1
=
2fC
1.
g mV
configuration
a.
b.
c.
f LB =
Ri (base)
1
2CB (RS + Ri (base ) )
Ri (base ) = R1 R2 r
gmV
Ro (emitter)
10
a.
Ro (collector)
Ri (base)
11
Ro (collector)
f LC =
1
2CC (RL + Ro (collector ) )
gmV
Ro (collector ) = RC ro
12
c.
Ro (emitter)
RE
Ro (emitter ) = RE ' RE
f LE =
Ro (emitter)
1
1
=
2C E Ro (emitter ) 2C E (RE ' RE )
RE ' =
CB
RS R1 R2 + r
+1
13
14
V
4 0.7
IE = E =
= 1.65mA I C
RE
2k
RV
VB = 2 CC = 4V
R1 + R2
r =
VT
IC
(100)26mV
1.65 mA
= 1.58k
At the base :
f LB =
1
2 C B (R S + Ri (base ) )
Ri (base ) = R1 R2 r = 1.32k
1
At the collector : f LC =
2CC (RL + Ro (collector ) )
Ro (collector ) = RC ro = 4k
At the emitter : f LE =
g mV
RE ' =
+1
= 24.44
= 1 2 6 Hz
L B
f LB = 6 .86 Hz
f LC = 25.67Hz
1
1
=
2C E Ro (emitter ) 2C E (RE ' RE )
RS R1 R2 + r
= 1 2 Hz
6
L B
=1 2 6
Hz
L B
f LE = 330.12 Hz
Since fLE is the highest among the three, the low cut-off frequency,
15
16
fL = fLE = 330.12Hz
22uF
50R
E
-
1k8
r
22k
820R
B
10uF
r =
17
VT
IC
Vo
gmV
V
VS
0.5uF
(180)26mV
2.5 mA
3k3
6k8
= 1.87 k
18
E
V
820R
gmV
r
1k8
3k3
B
6k8||22k
Rt =
f LE
19
1 r
= = 10.39
gm
10uF
Ri = 820 r Rt = 10.2
f LB =
1
=
= 120 .17 Hz
2 C E ( R S + R i )
20
2 C B (RoB )
= 4 .6 Hz
E
-
820R
gmV
1k8
f LC
0.5uF
3k3
VCC
80k
1k
Vs
1
=
= 62 .41 Hz
2 C C ( R C + R L )
0.1uF
VO
20k
0.5uF
2k7
47k
Since fLE is the highest among the three, the low cut-off frequency,
fL = fLE = 120.17Hz
21
22
At emitter : CB is shorted
r =
23
VT
IC
(100)26mV
=
1mA
Ro = 2k 7
= 2.6k
f LE =
24
r + 1k 80k 20k
1+
) = 34.61
1
= 67 .23 Hz
2 C E ( R L + R o )
At base : CE is shorted
f L = f LE
Since fLB is the highest among the two, the low cut-off frequency,
fL = fLB = 105.61Hz
25
f LB = f LC =
1
f LE ;
10
f LCi = f LCo =
1
f LE
10
26
f L = f LC
27
f LB = f LE =
1
f LC ;
10
f LCi = f LCo =
1
f LC
10
f L = f LCi = f LE
28
f LB = f LC =
1
f LE ;
10
f LB = f LCo =
1
f LC
10
Rsig
CG
CD
Vo
+
Vgs
VS
gmVgs
RG
rd
RD
- S
RL
CS
RS
CD
29
30
Rsig
CG
RG
Vgs
gmVgs
-
Ri = Rsig + RG
Rsig
Vo
31
rd
RD
Vo
RL
RG
Vgs
gmVgs
-
f LG =
CD
RoD = (RD rd ) + RL
1
2CG (Ri )
32
rd
RL
RD
f LD =
2CD (RoD )
c.
gmvgs
i'
vgs
rds
R d'
Rt
Rt =
33
Vgs
Vs
1
=
=
g mVgs g mVgs g m
1
f LS =
2CS RoS
Rd '
vgs (rds + Rd ' ) 1 + rds
=
=
Rt =
1 + g m rds (1 / rds ) + g m
i0
RoS = RS Rt
If rds is large, Rt =
34
35
v vgs
=
i
io
'
vgs = i rds + io Rd '
Rt =
1
gm
36
CG
G
+ Vgs -
Vo
RG
gmVgs
rd
RS
RL
f LG =
Ro =
1
2CG (Ri + RG )
37
1
rd RS
gm
f LS =
1
2CS (Ro + RL )
38
Ri
Vs
Vo
CS
Vgs
RS
gmVgs
+
R1||R2
39
40
CD
RD
CG
RL
a.
R1||R2
CG
RG = R1 R2
f LG =
RoD = (RD rd ) + RL
1
2CG (RG )
41
f LD =
42
c.
2CD (RoD )
Rt = RS
43
1
gm
f LS =
1
2CS (Ri + Rt )
f L = f LS
44
f LG = f LD =
1
f LS ;
10
f LCi = f LCo =
1
f LS
10
f L = f LD
f LG = f LS =
1
f LD ;
10
f LCi = f LCo =
f L = f LCi = f LS
1
f LD
10
45
f LG = f LD =
1
f LS ;
10
f LG = f LCo =
46
Example
Example
For the circuits below obtain their lower cut off frequency.
Assume g m = 5 mS, rds = 20k
For the circuits below obtain their lower cut off frequency.
Assume g m = 5 mS, rds = 20k
VDD
1M8
1
F
1
F
1
F
2k 7
1
F
Q1
Q1
vin
vo
470k
2k7
vin 2k2
1k5
22
F
47
VSS
10
F
48
1M0
vo
V
1
f LS
10
Example
For the circuits below obtain their lower cut off frequency.
Assume g m = 5 mS, rds = 20k
VDD
1M0
1
F
1
F
Q1
5M6
10
F
49
50
51
52
Millers Theorem
53
V1 V2
Z
V2 =
A V1
I1
I1
V (1 + A)
V1
= 1
=
Z
Z
1 + A
I2
V1
V2
V 2 V1
Z
V2
A V1
I2
I2
1
V 2 1 +
Z
V2
1 + 1
54
I1
V1
I1
ZM1
V1
Z
1 + A
Z
1 + A
Z
1 + A
V1
V2
V2
I2
ZM 2
55
I1
I2
V2
1 + 1
A
ZM1
Z
1
1 +
A
1 + 1
A
XC
1+ A
1
CM 1
C (1 + A )
I1
Z
1+ A
X CM 1
CM 1
56
C (1 + A)
V1
ZM 2
Z
1
1+
A
X CM 2
XC
1
1+
A
I2
V2
CM 2
CM 2
C (1 +
C (1 +
1
)
A
1
)
A
gmV
CMi
ro
CMo
gmV
ro
C = Cbe
CMi = C (1 + A ) = Cbc (1 + A )
C = Cbc
Q-point values
Given :
Determine :
R1
vS
59
RC
4 k C
33 k
RS
C1
2 k
1 F
R2
22 k
vO
RL
5 k
RE
4 k
r =
VBB =
R2
VCC = 2 V
R1 + R2
ro =
RB =
R1 R2
= 13.2 k
R1 + R2
2 F
I CQ = I B = 0.314 mA
C3
10 F
60
Transistor parameters
value
IB =
VCC = 5V
A : midband gain
58
1
1
C Mo = C 1 + = Cbc 1 +
A
A
gm =
VT
I CQ
= 9.94 k
VA
= 318 .47 k
I CQ
I CQ
VT
= 12.08 mS
vs
vo
C
R1||R2
CMi
ro
RC||RL
gmV
Amid = g m
Midband gain
(r
(R
(R
S
r )
+ RB
Miller Capacitance
CMo
(r
r )
RC RL
1
CMo = Cbc 1 + = (1 p )(1.051) = 1.05 pF
A
(r
61
Amid = 12.08m
Ri = RS R1 R2 r = 1.48 k
Ro = RC RL ro = 2.18 k
62
Output side
f Hi =
1
1
=
= 4.74MHz
2Ri Cin 2 (1.48 k )(22.67 p )
f Ho =
1
1
=
= 69.53MHz
2RoCout 2 (2.18k )(1.05 p )
63
High-frequency in CC amplifier
Figure below shown common collector amplifier circuit
f H = 4.74MHz
R e' = R e // R L
64
Vin
rbb'
Rb
b'
ib
cb'c
rb' e
cb'e
R e'
ib
Vout
Vin
rbb'
ib
Rb
cb'c
b'
cm1
rm1 rm2
Cm2
Cb'e = C
65
C Mi = C m1
rMi = rm1
Miller Capacitance
Cin = C b 'c + C Mi
C Mo = C bc 1 +
A
Cout = C Mo
R i = rbb rMi
Miller Resistance
R o = rMo R e '
rMi =
67
C Mo = C m 2
66
C Mi = C bc (1 + A )
r
(1 + A V )
Vout
rb'e = r
C b 'c = C
R e'
ib
AV
rMo = r
1+ AV
68
rMo = rm 2
High-frequency in CB amplifier
f Hi =
Input side
f Ho =
Output side
1
2R i Cin
1
2R o C out
vin
Re
Rc
69
vo
70
Re
ib
ie
Miller Capacitance
rb' e
cb'e
rce
vin
Rc
cb'c
Cin = C b 'e = C
Vout
Cout = C b 'c = C
rbb'
ib
Cb'e = C
71
C b 'c = C
R i = r || rbb
rb'e = r
72
R o = rce R c
High-frequency in CS amplifier
f Hi =
Input side
f Ho =
Output side
1
2R i Cin
1
2R o C out
73
74
Cgd
Rsig
Vo
D
+
Vo
+
VS
Rsig
gmVgs
RG
Vgs
Cgs
rd
RD
Cwi
RL
Vgs
CMi
-
Cds
-
CMi = Cgd (1 + A )
1
2RiCin
1
f Ho =
2RoCout
f Hi =
75
A : midband gain
Ri = Rsig RG
76
gmVgs
RG
Cgs
Cwo
rd
Cds
RD
RL
CMo
1
C Mo = C gd 1 +
A
High-frequency in CD amplifier
S
+
VS
Vo
Vgs
gmVgs
RG
Cgd
rd
RS
Cds
D
1
2RiCin
1
f Ho =
2RoCout
f Hi =
77
78
High-frequency in CG amplifier
S
gmVgs
Rsig
RG
CMi
Cgd
rd
Cds
RS
RL
CMo
CMi = Cgs (1 + A )
1
C Mo = C gs 1 +
A
A : midband gain
Ri = Rsig RG
79
Ro =
1
RS RL rd
gm
80
RL
Rsig
VS
RS
gmVgs
Vgs
Cgd
Cgs
RD
RL
CMi = Cds (1 + A )
81
1
f Hi =
2RiCin
1
f Ho =
2RoCout
r
rMi = d
1+ A
Ri = Rsig RG rMi
82
1
C Mo = C ds 1 +
A
rd
1+
1
A
Ro = rMo RD RL