Analog Integrated Circuits

Lab 1 MOSFET DC Ids Vds Characteristic Curve & Spice Extraction of Small-Signal
Parameters
1. OBJECTIVE In this lab, you will study the I-V characteristics and small-signal model
of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).

2. OVERVIEW During the course of this experiment we will determine a number of

important device parameters of an n-channel enhancement mode MOSFET by
analyzing a number of DC characteristics. The DC characteristics will be split up into
three ranges: the sub threshold region (VGS < VT), the linear region (VT < VGD,
VGS > VT), and the saturation region (VT > VGD, VGS > VT). You will learn the
relevance of the current pre-factor ( nCiZ / L ), the channel transconductance (gm),
the channel conductance (gDS), and the channel resistance rd.