IRFZ44N

N-Channel Enhancement-Mode MOSFET

VDS 55V RDS(ON) 20m ID 49A

H
C
t
N
c
E
u
TRENFET w Prod
Ne
G

TO-220AB

0.185 (4.70)
0.170 (4.31)

0.154 (3.91)
Dia.
0.142 (3.60)

0.415 (10.54)
Max.

0.410 (10.41)
0.350 (8.89)
G

PIN
D

0.603 (15.32)
0.573 (14.55)
0.360 (9.14)
0.330 (8.38)

0.635 (16.13)
0.580 (14.73)

1.148 (29.16)
1.118 (28.40)

0.104 (2.64)
0.094 (2.39)
0.160 (4.06)
0.09 (2.28)

0.560 (14.22)
0.530 (13.46)

0.037 (0.94)
0.026 (0.66)

0.022 (0.56)
0.014 (0.36)

0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.190 (4.83)

Features

0.155 (3.93)
0.134 (3.40)

0.055 (1.39)
0.045 (1.14)

0.113 (2.87)
0.102 (2.56)

Dimensions in inches
and (millimeters)

* May be notched or flat

Dynamic dv/dt Rating

Repetitive Avalanche Rated
175C Operating Temperature
Ease of Paralleling
Fast Switching for High Efficiency
Simple Drive Requirements

Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250C/10 seconds, 0.17 (4.3mm) from case
Mounting Torque: 10 in-lbs maximum
Weight: 2.0g

Maximum Ratings and Thermal Characteristics (T

Parameter

= 25C unless otherwise noted)

Symbol

Limit

Unit

Drain-Source Voltage

VDS

55

Gate-Source Voltage

VGS

20

ID

49
35

IDM

160

PD

94

EAS

210

mJ

IAR

25

EAR

11

mJ

TJ, Tstg

55 to 175

Junction-to-Case Thermal Resistance

RJC

1.6

Junction-to-Ambient Thermal Resistance

RJA

62

TC = 25C
TC = 100C

Continuous Drain Current

VGS =10V
Pulsed Drain Current (1)
Maximum Power Dissipation

TC = 25C

Single Pulse Avalanche Energy

(2)

(1)

Avalanche Current

Repetitive Avalanche Energy

(1)

Operating Junction and Storage Temperature Range

C/W

Notes: (1) Repetitive rating; pulse width limited by max. junction temperature
(2) VDD = 25V, starting TJ = 25C, L = 470H, RG = 25, IAS = 25A

5/8/01

This datasheet has been downloaded from http://www.digchip.com at this page

IRFZ44N
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (T

Parameter

= 25C unless otherwise noted)

Symbol

Test Condition

Min

Typ

Max

Unit

V(BR)DSS

VGS = 0V, ID = 250A

55

VGS = 10V, ID = 25A

16

20

VGS = 6V, ID = 23A

18

22

Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance(1)

RDS(on)

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2.0

4.0

gfs

VDS = 25V, ID = 25A

17

78

IDSS

VDS = 55V, VGS = 0V

25

IGSS

VGS = 20V, VDS = 0V

100

nA

VDS = 44V, ID = 25A,VGS = 5V

29

40

60

65

11

13

19

34

185

240

85

119

165

210

(1)

Forward Transconductance

Drain-Source Leakage Current

Gate-Source Leakage

Dynamic
Total Gate Charge(1)

Qg
(1)

Gate-Source Charge

Qgs

Gate-Drain (Miller) Charge(1)

Qgd

(1)

Turn-On Delay Time

ID = 25A

td(on)

(1)

Rise Time

Turn-Off Delay Time

VDS = 44V, VGS = 10V

VDD = 28V

tr
(1)

td(off)

Fall Time(1)

tf

ID = 25A, RG = 12
RD = 1.1, VGEN = 10V

nC

ns

Input Capacitance

Ciss

VGS = 0V

3223

Output Capacitance

Coss

VDS = 25V

308

Reverse Transfer Capacitance

Crss

f = 1.0MHZ

135

IS

49

ISM

160

VSD

IS = 25A, VGS = 0V

0.93

1.3

53

ns

93

nC

pF

Source-Drain Diode
Continuous Source Current
(2)

Pulsed Source Current

Diode Forward Voltage(1)

(1)

Source-Drain Reverse Recovery Time

trr
(1)

Source-Drain Reverse Recovery Charge

Qrr

IF = 25A, di/dt = 100A/s

Notes: (1) Pulse width 300s; duty cycle 2%

(2) Repetitive rating; pulse width limited by max. junction temperature

VDD
ton

Switching
Test Circuit

RD

VIN

VOUT

Switching
Waveforms

td(on)

RG

tr

td(off)

tf
90 %

90%

Output, VOUT

VGEN

toff

10%

10%
INVERTED

DUT

90%
50%

Input, VIN

50%

10%
PULSE WIDTH

IRFZ44N
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
Fig. 1 - Output Characteristics
7.0V

6.0V

VDS = 10V

140
10V

80

120

ID Drain Current (A)

ID Drain-toSource Current (A)

VGS =

Fig. 2 - Transfer Characteristics

100

160

100
5.0V

80
60
4.5V

40

60

40

20
4.0V

20

3.5V

0
0

10

VGS Gate-to-Source Voltage (V)

VDS Drain-to-Source Voltage (V)

Fig. 3 - On Resistance vs.

Drain Current

Fig. 4 - Capacitance
4000

0.04
VGS = 4.5V

Ciss

3500
5V

3000
Capacitance (pF)

0.03

6V

0.02

10V

2500
f = 1MHz
VGS = 0V

2000
1500
1000

0.01

Crss
Coss

500
0
0

20

40

60

80

100

120

140

160

Fig. 5 - Gate Charge

VGS Gate-to-Source Voltage (V)

10
VDS = 44V
ID = 25A
8

0
10

20

30

40

Qg Gate Charge (nC)

10

20

30

40

50

VDS Drain-to-Source Voltage (V)

ID Drain Current (A)

0
0

50

60

60

IRFZ44N
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
Fig. 7 On-Resistance
vs. Gate-to-Source Voltage

Fig. 6 - Source-Drain Diode

Forward Voltage
0.04

100
VGS = 0V

RDS(ON) -- On-Resistance ()

I D = 25A

10

0.1

0.03

0.02

0.01

0.01
0

0.2

0.4

0.6

0.8

1.2

1.4

VSD Source-to-Drain Voltage (V)

10

VGS -- Gate-to-Source Voltage (V)

Fig. 8 Breakdown Voltage vs.

Junction Temperature

Fig. 9 Threshold Voltage

2.8

82
80

VGS(th) -- Gate-to-Source
Threshold Voltage (V)

BVDSS -- Drain-to-Source Breakdown

Voltage (V)

78
76
74
72
70
68

2.4

1.6

1.2

66
64
--50 --25

25

50

75

100

125

TJ -- Junction Temperature (C)

150

175

0.8
--50 --25

25

50

75

100

125

150

175

IRFZ44N
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
Fig. 10 On-Resistance vs. Junction
Temperature

Fig. 11 Thermal Impedance

1

2.0
VGS = 10V
ID = 25A

D = 0.5

RJC (norm) -- Normalized Thermal

Impedance

1.8
1.6
1.4
1.2
1
0.8

0.6
--50 --25

25

50

75

100

125

150

0.2
PDM
0.1

0.1

t2

Single Pulse

0.01
0.0001

175

0.001

0.01

0.1

10

Fig. 13 Maximum Safe Operating Area

Fig. 12 Power vs. Pulse Duration

1000

1000

800

ID -- Drain Current (A)

RDS(ON) Limit

600

400

10
0
s

100
1m

100ms

10

ms

10
DC

200

0
0.0001

Pulse Duration (sec.)

TJ -- Junction Temperature (C)

Power (W)

t1

0.05

1
0.001

0.01

0.1

Pulse Duration (sec.)

10

10

VDS -- Drain-Source Voltage (V)

100