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APM4550K

Dual Enhancement Mode MOSFET (N- and P-Channel)

Pin Description

Features

N-Channel
30V/7A,
RDS(ON) = 20m (typ.) @ VGS = 10V
RDS(ON) = 30m (typ.) @ VGS = 4.5V

P-Channel
Top View of SOP 8

-30V/-5A,
RDS(ON) = 40m (typ.) @ VGS = -10V

(7) (8)
D1 D1

RDS(ON) = 62m (typ.) @ VGS = -4.5V

Super High Dense Cell Design


Reliable and Rugged
(4)
G2

Lead Free Available (RoHS Compliant)


(2)
G1

Applications

(3)
S2

S1
(1)

Power Management in Notebook Computer,

D2
(5)

Portable Equipment and Battery Powered


N-Channel

Systems

D2
(6)

P-Channel

Ordering and Marking Information


Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150C
Handling Code
TR : Tape & Reel
TU : Tube
Lead Free Code
L : Lead Free Device

APM4550
Lead Free Code
Handling Code
Temp. Range
Package Code

APM4550K :

APM4550
XXXXX

XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - May, 2007

www.anpec.com.tw

APM4550K
Absolute Maximum Ratings
Symbol

(TA = 25C unless otherwise noted)

Parameter

N Channel

P Channel

VDSS

Drain-Source Voltage

30

-30

VGSS

Gate-Source Voltage

20

20

-5

ID*

Continuous Drain Current

IDM*

300s Pulsed Drain Current

30

-20

IS*

Diode Continuous Forward Current

2.5

-2

TJ

Maximum Junction Temperature

TSTG

Storage Temperature Range

PD*

Power Dissipation

VGS=10V

Parameter

A
A
C

-55 to 150
TA=25C

TA=100C

0.8

Thermal Resistance-Junction to Ambient


2
Note: *Surface Mounted on 1in pad area, t 10sec.

Symbol

150

RJA*

Electrical Characteristics

Unit

W
C/W

62.5

(TA = 25C unless otherwise noted)

APM4550K

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics
Drain-Source Breakdown
Voltage

BVDSS

VGS=0V, IDS=250A

N-Ch

30

VGS=0V, IDS=-250A

P-Ch

-30

VDS=24V, VGS=0V
Zero Gate Voltage Drain
Current

IDSS

V
1

N-Ch
30

TJ=85C
VDS=-24V, VGS=0V

-1
P-Ch
-30

TJ=85C
VGS(th)

Gate Threshold Voltage

IGSS

RDS(ON)

Gate Leakage Current

Drain-Source On-State
Resistance

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

VDS=VGS, IDS=250A

N-Ch

1.5

VDS=VGS, IDS=-250A

P-Ch

-1

-1.5

-2

VGS=20V, VDS=0V

N-Ch

100

P-Ch

100

VGS=10V, IDS=7A

N-Ch

20

27.5

VGS=-10V, IDS=-5A

P-Ch

40

50

VGS=4.5V, IDS=5A

N-Ch

30

40

VGS=-4.5V, IDS=-4A

P-Ch

62

80

nA

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APM4550K
Electrical Characteristics (Cont.)
Symbol

Parameter

(TA = 25C unless otherwise noted)


APM4550K

Test Condition

Min.

Typ.

Max.

Unit

Diode Characteristics
VSD

Diode Forward Voltage

ISD=2.5A, V GS=0V

N-Ch

0.8

1.3

ISD=-2A, V GS=0V

P-Ch

-0.8

-1.3

trr

Reverse Recovery Time

N-Channel
ISD=7A, dlSD/dt=100A/s

N-Ch

P-Ch

13

Q rr

Reverse Recovery
Charge

N-Channel
ISD=-5A, dlSD/dt=100A/s

N-Ch

P-Ch

N-Ch

P-Ch

8.3

N-Channel
VGS=0V,
VDS=15V,
Frequency=1.0MHz

N-Ch

620

P-Ch

590

N-Ch

85

P-Channel
VGS=0V,
VDS=-15V,
Frequency=1.0MHz

P-Ch

95

N-Ch

65

P-Ch

70

N-Ch

11

P-Ch

N-Ch

10

18

P-Ch

12

23

N-Ch

22

41

P-Ch

27

50

N-Ch

P-Ch

13

24

N-Channel
VDS=15V, V GS=10V,
IDS=7A

N-Ch

14

19

P-Ch

11

15

N-Ch

1.4

P-Channel
VDS=-15V, V GS=-10V,
IDS=-5A

P-Ch

1.3

N-Ch

2.6

P-Ch

2.7

Dynamic Characteristics
Gate Resistance

C iss

Input Capacitance

C oss

Output Capacitance

C rss

Reverse Transfer
Capacitance

td(ON)

Turn-on Delay Time

Tr

Turn-on Rise Time

Tf

ns
nC

RG

td(OFF)

VGS=0V,V DS=0V,F=1MHz

N-Channel
VDD=15V, R L=15,
IDS=1A, V GEN=10V,
R G=6

Turn-off Delay Time

P-Channel
VDD=-15V, R L=15,
IDS=-1A, V GEN=-10V,
R G=6

Turn-off Fall Time

Gate Charge Characteristics

pF

ns

Qg

Total Gate Charge

Q gs

Gate-Source Charge

Q gd

Gate-Drain Charge

nC

Notes:
a : Pulse test ; pulse width 300s, duty cycle 2%.
b : Guaranteed by design, not subject to production testing.

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

www.anpec.com.tw

APM4550K
Typical Characteristics
N-Channel
Drain Current

Power Dissipation
8

2.5

7
2.0

ID - Drain Current (A)

Ptot - Power (W)

6
1.5

1.0

5
4
3
2

0.5

1
o

TA=25 C
0.0

20

TA=25 C,VG=10V

40

60

80 100 120 140 160

40

60

80 100 120 140 160

Tj - Junction Temperature (C)

Safe Operation Area

Thermal Transient Impedance


Normalized Transient Thermal Resistance

Lim
it

10

Rd
s(o
n)

ID - Drain Current (A)

20

Tj - Junction Temperature (C)

100

300s
1ms

10ms
100ms

0.1

1s
DC

TA=25 C

0.01
0.01

0.1

10

Duty = 0.5
0.2
0.1
0.05

0.1

0.02
0.01

0.01

Single Pulse

1E-3
1E-4

100

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

Mounted on 1in pad


o
RJA : 62.5 C/W

1E-3

0.01

0.1

10 30

Square Wave Pulse Duration (sec)

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APM4550K
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
30

Drain-Source On Resistance
50

VGS= 4.5,5,6,7,8,9,10V

27

4V

RDS(ON) - On - Resistance (m)

45

ID - Drain Current (A)

24
21
18
15

3.5V

12
9
3V

40
VGS=4.5V

35
30
25

VGS=10V

20
15
10

3
2.5V
0
0.0

0.5

1.0

1.5

2.0

2.5

3.0

10

15

ID - Drain Current (A)

Drain-Source On Resistance

Gate Threshold Voltage


1.6

30

IDS=250

ID=7A

1.4

Normalized Threshold Voltage

45

RDS(ON) - On - Resistance (m)

25

VDS - Drain-Source Voltage (V)

50

40
35
30
25
20
15
10

20

1.2
1.0
0.8
0.6
0.4
0.2

0.0
-50 -25

10

VGS - Gate - Source Voltage (V)

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

25

50

75 100 125 150

Tj - Junction Temperature (C)

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APM4550K
Typical Characteristics (Cont.)
N-Channel
Drain-Source On Resistance

Source-Drain Diode Forward

2.00

30

VGS = 10V
IDS = 7A
10

Tj=150 C

1.50

IS - Source Current (A)

Normalized On Resistance

1.75

1.25
1.00
0.75
0.50

Tj=25 C
1

0.25
o

0.00
-50 -25

RON@Tj=25 C: 20m
0

25

50

0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

75 100 125 150

Tj - Junction Temperature (C)

VSD - Source - Drain Voltage (V)

Capacitance

Gate Charge

1000

10

Frequency=1MHz

VDS=15V

900

VGS - Gate - source Voltage (V)

C - Capacitance (pF)

800
700
Ciss

600
500
400
300
200
100
0

Coss

IDS=7A

8
7
6
5
4
3
2
1

Crss
0

10

15

20

25

30

10

12

14

QG - Gate Charge (nC)

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

www.anpec.com.tw

APM4550K
Typical Characteristics (Cont.)
P-Channel
Power Dissipation

Drain Current
6

2.5

-ID - Drain Current (A)

Ptot - Power (W)

2.0

1.5

1.0

0.5

1
o

0.0

TA=25 C
0

20

40

60

80 100 120 140 160

40

60

80 100 120 140 160

Safe Operation Area

Thermal Transient Impedance


Normalized Transient Thermal Resistance

Rd
s(o
n)
Lim
it

-ID - Drain Current (A)

20

Tj - Junction Temperature (C)

300s
1ms

1
10ms
100ms
1s

0.1

DC

TA=25 C

0.01
0.01

Tj - Junction Temperature (C)

50

10

TA=25 C,VG=-10V

0.1

10

Duty = 0.5

1
0.2
0.1
0.05

0.1
0.02
0.01

0.01

Single Pulse

1E-3
1E-4

100

-VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

Mounted on 1in pad


o
RJA : 62.5 C/W

1E-3

0.01

0.1

10 30

Square Wave Pulse Duration (sec)

www.anpec.com.tw

APM4550K
Typical Characteristics (Cont.)
P-Channel
Output Characteristics

Drain-Source On Resistance

20

90

RDS(ON) - On - Resistance (m)

18

100

VGS=-4.5-5,-6,-7 -8,-9,-10V -4V

-ID - Drain Current (A)

16
-3.5V

14
12
10

-3V

8
6
4

-2.5V

80
VGS=-4.5V
70
60
50
VGS=-10V
40
30
20

2
-2V
0
0.0

0.5

1.0

1.5

2.0

2.5

10

3.0

12

16

-ID - Drain Current (A)

Drain-Source On Resistance

Gate Threshold Voltage


1.6

ID=-5A
90

20

IDS= -250

1.4

Normalized Threshold Voltage

RDS(ON) - On - Resistance (m)

-VDS - Drain - Source Voltage (V)

100

80
70
60
50
40
30
20

1.0
0.8
0.6
0.4
0.2
0.0
-50 -25

10

-VGS - Gate - Source Voltage (V)

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

1.2

25

50

75 100 125 150

Tj - Junction Temperature (C)

www.anpec.com.tw

APM4550K
Typical Characteristics (Cont.)
P-Channel
Drain-Source On Resistance

Source-Drain Diode Forward


20

2.0
VGS = -10V
IDS = -5A

10

1.6

-IS - Source Current (A)

Normalized On Resistance

1.8

1.4
1.2
1.0
0.8
0.6

Tj=150 C
o

Tj=25 C
1

0.4
o

RON@Tj=25 C: 40m
0.2
-50 -25

25

50

75

0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100 125 150

Tj - Junction Temperature (C)

-VSD - Source - Drain Voltage (V)

Capacitance

Gate Charge
10

800

Frequency=1MHz

VDS= -15V
9

C - Capacitance (pF)

600

-VGS - Gate - source Voltage (V)

700
Ciss

500
400
300
200
100
0

Coss
Crss

8
7
6
5
4
3
2
1
0

10

15

20

25

30

10

12

QG - Gate Charge (nC)

-VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

IDS= -5A

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APM4550K
Package Information
SOP-8
D

E1

SEE VIEW A

h X 45

0.25

A2

A1

GAUGE PLANE
SEATING PLANE
VIEW A

S
Y
M
B
O
L

SOP-8
MILLIMETERS
MIN.

INCHES
MAX.

MIN.

MAX.

1.75

0.069
0.004

0.25

0.010

A1

0.10

A2

1.25

0.31

0.51

0.012

0.020

0.17

0.25

0.007

0.010

0.049

4.90 BSC

0.193 BSC

6.00 BSC

0.236 BSC

E1

3.90 BSC

0.154 BSC

1.00 BSC

0.050 BSC

0.25

0.50

0.010

0.020

0.40

1.27

0.016

0.050

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

10

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APM4550K
Carrier Tape & Reel Dimensions
t
D

Po

P1

Bo

F
W

Ao

D1

Ko
T2

J
C
A

T1

Application

SOP-8

A
3301

B
62 1.5

C
12.75 +
0.1 5

J
2 + 0.5

T1
12.4 +0.2

T2
2 0.2

F
D
D1
Po
P1
Ao
5.5 0.1 1.550.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1

W
12 + 0.3
- 0.1
Bo
5.2 0.1

P
8 0.1

E
1.75 0.1

Ko
t
2.1 0.1 0.30.013

(mm)

Devices Per Reel


Package Type
SOP- 8

Devices Per Reel


2500

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

11

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APM4550K
Physical Specifications
Terminal Material
Lead Solderability

Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn


Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)


tp

TP

Critical Zone
T L to T P

Temperature

Ramp-up

TL

tL
Tsmax

Tsmin
Ramp-down
ts
Preheat

25

t 25 C to Peak

Tim e

Classification Reflow Profiles


Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5C of actual
Peak Temperature (tp)
Ramp-down Rate
Time 25C to Peak Temperature

Sn-Pb Eutectic Assembly

Pb-Free Assembly

3C/second max.

3C/second max.

100C
150C
60-120 seconds

150C
200C
60-180 seconds

183C
60-150 seconds

217C
60-150 seconds

See table 1

See table 2

10-30 seconds

20-40 seconds

6C/second max.

6C/second max.

6 minutes max.

8 minutes max.

Notes: All temperatures refer to topside of the package. Measured on the body surface.

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

12

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APM4550K
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures
3

Volume mm
350

Package Thickness

Volume mm
<350

<2.5 mm

240 +0/-5C

225 +0/-5C

2.5 mm

225 +0/-5C

225 +0/-5C

Table 2. Pb-free Process Package Classification Reflow Temperatures


3

Package Thickness

Volume mm
<350

Volume mm
350-2000

Volume mm
>2000

<1.6 mm

260 +0C*

260 +0C*

260 +0C*

1.6 mm 2.5 mm

260 +0C*

250 +0C*

245 +0C*

2.5 mm
250 +0C*
245 +0C*
245 +0C*
* Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL
level.

Reliability Test Program


Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up

Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78

Description
245C, 5 SEC
1000 Hrs Bias @125C
168 Hrs, 100%RH, 121C
-65C~150C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms, 1tr > 100mA

Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pao Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright ANPEC Electronics Corp.


Rev. A.1 - May, 2007

13

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