MEMS Question Bank for ET7014 Applications

Valliammai Engineering College
Department of EIE
Question bank-Applications of MEMS-ET7014
Prepared by Andy Srinivasan
Unit I- PART-A
BTL
1.
Name any two materials used in the fabrication of MEMS
2.
Define stress and strain
3.
Define mean free path.
4.
Define sheet resistivity.
5.
Define elastic modulus.
6.
Define beam.
7.
Describe resonant frequency and Q-factor?
8.
Give some commonly encountered beam structures in MEMS.
9.
Describe cantilever?
10.
Describe thermal stresses?
11.
Demonstrate quality factor (Q)?
12.
Relate shear stress and shear strain.
13.
Classify the three preparatory steps required to calculate the curvature of the beam.
14.
Explain the strategies for minimizing undesirable intrinsic bending?
15.
Define stress and explain tensile and compressive stress.
16.
State Hooks law and explain elastic limit.
17.
Justify, intrinsic stress is important for MEMS devices.
18.
Summarize the material having zero stress.
19.
A silicon piezoresistor is doped with 10-15 cm-3 boron atoms the length of resistor is 10
m2. if the length of piezo resistor is 10 m2 and cross section area is 10 m2.if the
length of piezo resistor increases by 2 m, what should be the new cross section area of
the piezoresistor so that the resistance does not change? Assume mobility carrier is
440cm2\V-s.
20.
Generalize the assumptions of simple bending theory?
Unit I- PART-B
1.
Marks
BTL
Describe in detail the MEMS fabrication processes: (i) Oxidation.
(7)
(ii) Etching.
(6)

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2.
Explain the various boundary conditions used in solving cantilever beams.
(13)
3.
Explain with neat sketches, various process steps in bulk micro machining process to
fabricate a pressure sensor.
(13)
4.
Explain with relevant diagrams, silicon based fabrication process used in the
fabrication of MEMS.
(13)
5.
Illustrate in detail about the flexural beam bending analysis.
(13)
6.
Discuss in detail the MEMS fabrication processes: (i) Photolithography.
(7)
(ii) Ion Implantation.
(6)
7.
Briefly explain about crystal planes and orientation in MEMS.
(13)
8.
(i)Apply the longitudinal strain for pure bending.
(7)
(ii)Also draw their relevant diagram and explain the longitudinal strain for pure
bending.
(6)
9.
Formulate the reduction of electrostatic forces generated by a pair of parallel-Plate

electrodes (having length L, width W and separated by a distance d) if both the
length L and the width W of these plates are reduced by a factor of 10.
(13)
10.
Describe in brief about

(i)dynamic system
(ii)resonant frequency, and
(iii) Quality factor.
(13)
11.
Describe in generalabout intrinsic stress in MEMS.
(13)
12.
Discuss in detail about torsional deflections.
(13)
13.
Examine the relation between stress and strain in brief.
(13)
14.
(i)Examine in detail about photolithography process.
(7)
(ii)Give Czochralski (CZ) method for producing single crystal silicon.
(6)
Unit I- PART
1.
A mechanical resonator has been demonstrated using SiC thin film material. The
length, width and thickness of resonator are 1.1m, 120nm, and 75nm, respectively.
Knowing the resonant frequency found experimentally was 1.014GHz, and
assuming a Youngs modulus of 700 GPa, Evaluate the density of the SiC material
used for resonator.
Marks
(15)

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2.
Evaluate the relation between tensile stress and strains
(8)
also give the details of mechanical properties of silicon.
(7)
3.
The intrinsic carrier concentration (ni) of silicon under room temperature is

1.5X1010/cm3. A silicon piece is doped with phosphorous to a concentration of 1018
cm-3. The mobility of electrons and holes in the silicon are approximately 1350
cm2/V-s and 480 cm2/V-s, respectively. Evaluate the resistivity of the doped bulk
silicon.
(15)
4.
Analyse the required torque to turn a micro mirror With 50% reduction in size?
(15)
Unit II- PART-A
BTL
1.
Name the widely practiced method for depositing structural and sacrificial materials?
2.
List the two types of CVD?
3.
List the two configurations of electrostatic transducer?
4.
Name the factor determines the pressure sensor sensitivity?
5.
Name the materials used in fabrication of parallel plate sensors
6.
Define electrical spring constant.
7.
Discuss the relative disadvantage of electrostatic actuation?
8.
Give the major advantages of electrostatic sensing and actuation?
9.
Summarize pull-in voltage?
10. Describe comb drive device?
11. Classify two different movements by which parallel plate capacitor is moved?
12. Illustrate the principle of operation of electrostatic sensors
13. Infer, how the parasitic capacitance avoided?
14. Explain the principle of electrostatic actuation.
15. Explain principle of capacitive pressure sensor.
16. Justify, nonlinearity can be avoided in capacitive pressure sensor.
17. Show the advantages of capacitive pressure sensor.

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18. Summarize main drawback associated with capacitive approach of sensor.
19. Prepare the pros and cons of different configurations of inter digitated finger capacitor.
20. Design a pressure sensor suited for parallel capacitive sensing.
Unit II- PART-B
Marks
BTL
1.
Explain the design and fabrication of electrostatic sensors
(13)
2.
With neat diagram, explain any two applications of electrostatic sensors
(13)
3.
With neat diagram explain (a) comb drive
(3)
(b) Transverse comb drive and
(5)
(c) Longitudinal comb drive.
(5)
4.
Describe in detail about the principle and working of electrostatic motor.
(13)
5.
Describe in brief about capacitance of parallel plates.
(13)
6.
Describe the Equilibrium position of Electrostatic Actuator under bias?
(13)
7.
Quote are the applications of comb drive devices?
(13)
8.
Discuss in detail about parallel plate capacitive accelerometer.
(13)
9.
What do you understand by membrane parallel plate pressure sensor?
(13)
10. Discuss the operation principle of scratch drive actuators.
(13)
11. (i)What is Pull In effect of parallel plate actuators?
(7)
(ii)Explain in detail about it.

12. (a)Describe the working of parallel plate capacitive accelerometer, with the help of
(8)
(7)
neat diagram.
(b)Design a capacitive accelerometer.
(6)
13. With neat diagram classify the two types of capacitive electrode configuration.
(13)
14. (i)Classify the different configurations of integrated finger capacitors
(6)
(ii)Give the relative pros and cons of different configurations of integrated finger
capacitors in terms of
a. Maximum displacement,
b. Linear/ angular displacement and
c. Force output.
(7)

Department of EIE
Unit II- PART-C
Marks
1.
Consider an air gap capacitor made with two fixed parallel planar plates. At rest (zero
bias), the distance between the two plates is air. The biasing voltage between two
parallel plates is x0 = 100 m and the areas of plates are A = 400 x 400 m2. The
media between the two plates is air. The biasing voltage between these two plates is V
= 5volts. Calculate the numerical value if half of the area is filled with water(as an
inter plate media)?
(15)
2.
A surface micro machined accelerometer has a proof mass supported by two

cantilevers with length L, with w and thickness t in y-direction. the fixed electrode are
in x-directions, the comb fingers have an overlapped length of Lo, thickness t and
spacing d. what is the sensitive axis of this sensor? Drive an Expression for the
acceleration sensitivity.
(15)
3.
Evaluate the fabrication process of condenser microphone.
(15)
4.
A parallel plate capacitor is suspended by two fixed guided cantilever beams, each
with length,width and thickness denoted l, w and t, respectively. The material is
polysilicon with Youngs modulus of 120 GPa.(l=400 m,w=10 m, and t=1 m.) The
gap Xo between two plates is 2 m. The area of the plate is 400 m by 400 m.
Calculate the amount of vertical displacement when a voltage of 0.4 volts is applied.
Repeat the calculation of displacement for the voltage of 0.2 volts.
(15)
Unit III- PART-A
BTL
1.
Name any three thermal sensors.
2.
Define thermal conduction.
3.
Describe the term forced thermal convection
4.
Define the term radiation.
5.
Define specific heat.
6.
Define TCE.
7.
Differentiate between the natural thermal convection and forced thermal convection.
8.
Express about linear expansion coefficient?
9.
Give the advantages of thermal bimetallic actuation.
10. Discuss about the bent beam thermal actuators.
11. Illustrate the principle of operation of thermocouple.
12. Illustrate the principle of thermal bimorph.

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13. Summarize the disadvantages of Electrostatic actuation.
14. Explain Natural thermal convection.
15. Explain the bent beam thermal actuators.
16. Explain the aspects to design the support beams.
17. Summarize advantages of Electrostatic actuation.
18. Compare the different ways of generating heat.
19. Generalize the lateral thermal actuators.
20. Combine advantage and Disadvantage of thermal dimorph actuation.
Unit III- PART-B
Marks
BTL
1.
Explain briefly about heat transfer processes associated with pot heating.
(13)
2.
With neat diagram explain (a) Infrared thermal sensor.
(7)
(b) En-point sensor.
(6)
3.
With schematic diagram explain single out-of-plane hot wire anemometer.
(13)
4.
Describe (i)Thermal sensors
(3)
(ii)Thermal actuators
(3)
(iii)Fundamentals of thermal transfer
(7)
(i)With schematic diagram explain thermal shear stress sensor.
(6)
(ii)Explain the fabrication process of thermal shear stress sensor.
(7)
6.
With neat diagram discuss about thermal bimorph principle.
(13)
7.
Discuss about bimetallic artificial cilia actuator in detail.
(13)
8.
With neat sketch describe about bimetallic actuators for object transport.
(13)
9.
In detail describe about thermal couples.
(13)
10. Discuss in detail about thermal resistors.
(13)
11. Illustrate about accelerometer based on thermal transfer principle.
(13)
12. Examine the fabrication process of surface micromachined hot-wire anemometer.
(13)
5.

Department of EIE
13. Develop the thermal transfer shear stress sensor.
Explain the sensor based on thermal expansion.
14. (i)Describe about bimetallic structure for infrared sensing.
(7)
(6)
(6)
(ii)Actuator the sensor based on thermal expansion.
(7)
Unit III- PART-C

(i)Design the thermal resistor sensor
(8)
(ii)Explain the fabrication of thermal resistor sensor.
(7)
2.
With relevant diagrams Evaluate any two application of thermal sensors
(15)
3.
Design the fabrication of thermal sensors
(15)
4.
A bimorph cantilever beam is made of two layers of different lengths. The layer at
the top is aluminum and bottom layer is silicon nitrate. The width of both layers is
20m. the length of the silicon nitrate and the aluminum layer is respectively 200
m and 100 m forms the anchor end. The youngs modulus of silicon nitride and
aluminum layer respectively is 250GPa and 70 GPa respectively. The thicknesses
of silicon nitride and aluminum layer respectively are 1m and 0.5m. The thermal
expansion coefficients of silicon nitride and aluminium layer respectively are
25ppm/C and 3ppm/C. At room temperature, the cantilever is straight. If the
cantilever is heated uniformly by 20C, Evaluate the amount of vertical
displacement at the end of the beam.
(15)
1.
Unit IV- PART-A
BTL
1.
List any four commonly used piezoelectric materials used in MEMS sensors.
2.
Define Piezoelectric effect.
3.
Define Curie point.
4.
Define Sputtering.
5.
Name the material used as bonding agent in preparing PZT materials.
6.
Examine the piezoelectric effect.
7.
Describe the term cantilever.
8.
Predict the dielectric effect in piezoelectricity.

Department of EIE
9. Give the primary application of acoustic wave sensor?
10. Give the applications of piezoelectric materials.
11. Examine the inverse effect of piezoelectricity.
12. Illustrate the term electromechanical coupling coefficient.
13. Classify the most familiar application of quartz crystal.
14. Point out the characteristics of sensor using piezoresistors.
15. Explain PVDF.
16. Analyse the growth of ZnO materials.
17. Summarise the assumptions to be made for calculating curvature of bending of a compact
model.
18. Judge the electrical noise and impedance mismatch effects reduction in polymer
piezoelectric tactile sensor.

19. Prepare the unique property of quartz enables it to be used in quartz crystal oscillator
20. Combine the use of ZnO instead of PZT.
Unit IV- PART-B
Marks
BTL
1.
Discuss the Applications of Quartz to piezoelectric sensing
(13)
2.
In brief discuss about properties of representive PZT materials.
(13)
3.
(i)What do you know about PVDF? Explain in detail about it.
(8)
(ii)Give the piezoelectric coefficient matrix for ZnO, also discuss about the
material growth.
(5)
4.
Discuss about ZnO piezoelectric force sensor.
(13)
5.
Examine the stress components when a voltage is applied across the electrode
for ZnO piezoelectric actuator.
(13)
6.
Calculate and derive the end displacement of ZnO piezoelectric actuator.
(13)
7.
(i)List the applications of Piezoelectric materials.
(5)
(ii)Quote short note on Inertia sensor.
(8)
8.
Describe about membrane piezoelectric accelerometer with neat diagram.
(13)
9.
Describe about PZT piezoelectric acoustic sensor in detail.
(13)

Department of EIE
10. Discover the flow rate sensor form piezoelectric effect.
(13)
11. With neat sketch explain about cantilever piezoelectric accelerometer.
(13)
12. In brief explain about PZT piezoelectric Microphone.
(13)
13. Explain with neat diagram (i)Surface acoustic wave
(7)
(ii)Flexural plate wave
(6)
14. Design the polymer piezoelectric tactile sensor array with neat diagram.
Unit IV- PART-C
(13)
Marks
1.
With the help of neat diagram design the fabrication and working of cantilever
piezoelectric accelerometer.
(15)
2.
Analyse the mathematical description of piezoelectric effects.
(15)
(ii)Derive the electromechanical coupling co-efficient of piezoelectric.

3.
Discuss about ZnO piezoelectric actuator, and derive the vertical displacement at
the end of the beam.
(15)
4.
A 500 m long cantilever type piezoelectric actuator is made of two layers, a

ZnO layer and a polysilicon layer. The width, thickness and material properties
of these two layers are listed in table. Evaluate the amount of vertical
displacement at the end of cantilever and the transverse force at the end when the
applied voltage is 10v.
ZnO
Polysilicon
Width (m)
20
20
Tgickmess (m)
1
2
Youngs modulus (GPa)
160
160
Piezoelectric coefficient (pC/N)
5
NA
(15)
Unit V- PART-A
BTL
1.
Define remnance.
2.
Define seed layer.
3.
Name few applications of MEMS in aerospace.
4.
Name the disadvantages of magnetic actuation.
5.
Describe your understand about cells.

Department of EIE
6. Examine the most commonly exploited biological binding protocols.
7.
Give any two applications of MEMS in medical field.
8.
Give two applications of magnetic actuators.
9.
Discuss the term saturation magnetization.
10. Summarise classes of ferromagnets.
11. Illustrate the principle behind magnetic actuation of MEMS.
12. Infer the several important factors to be considered when selecting technologies for on
chip pumps.
13. Examine the factors to be considered when selecting or developing a micromachined
valve.
14. Classifythe valve structuresaccording to the mode of operations.
15. Classify the valve structures.
16. Explain Piezo resistive effect.
17. Summarise the flow resistance of a channel.
18. Explain electric double layer.
19. Prepare the classification of external magnetic field.
20. Generalise the major benefits of using microfluid platforms to replace bench top
chemistry.
Unit V- PART-B
Marks
BTL
1.
Describe about hybrid magnetic actuator with position holding.
(13)
2.
Discuss in brief about the method of pressure driven flow fluid movement.
(13)
3.
Discuss about electro osmosis flow process in detail.
(13)
4.
Examine about pneumatic controlled PDMS valve.
(13)
5.
Classify about optical MEMS and its applications.
(13)
6.
(i)Explain about Blood pressure sensor with neat sketch.
(6)
(ii) Explain the Blood pressure sensor device design considerations
(7)
7.
In detail explain about fabrication process of embedded micro channels.
(13)
8.
In detail explain about fabrication process for a parylene channel.
(13)

Department of EIE
9. Explain about magnetic beam actuation in detail.
(13)
10. Develop the design and fabrication process of Artificial hair cell element.
(13)
11. Examine in detail (a) piezoresistive sensor materials
(7)
(b) Stress in flexural cantilevers.
(6)
12. With neat diagram describe the (a) fabrication of silicon proof mass with
(7)
cantilever.
(b) Electroplating of magnetic materials.
(6)
13. Describe the electrophoresis and dielectrophoresis with neat diagram.
(13)
14. Give a detailed account of (i)optical MEMS and
(7)
(ii)NEMS
(6)
Unit V- PART-C
Marks
1.
Design the fabrication process of magnetic coil
(15)
2.
With relevant diagrams evaluate about microfluidics and application of MEMS
(15)
3.
With the help of neat diagram design the fabrication of a surface micro machined
piezoresistive pressure sensor.
(15)
4.
Evaluate the various important considerations that must be taken in to account

while selecting a channel material for microfluidic applications.
(15)

MEMS Question Bank for ET7014 Applications

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Valliammai Engineering College

Name any two materials used in the fabrication of MEMS

Define stress and strain

Define mean free path.

Define sheet resistivity.

Define elastic modulus.

Describe resonant frequency and Q-factor?

Give some commonly encountered beam structures in MEMS.

Describe thermal stresses?

Demonstrate quality factor (Q)?

Relate shear stress and shear strain.

Explain the strategies for minimizing undesirable intrinsic bending?

Define stress and explain tensile and compressive stress.

State Hooks law and explain elastic limit.

Justify, intrinsic stress is important for MEMS devices.

Summarize the material having zero stress.

Generalize the assumptions of simple bending theory?

Describe in detail the MEMS fabrication processes: (i) Oxidation.

Valliammai Engineering College

Illustrate in detail about the flexural beam bending analysis.

Discuss in detail the MEMS fabrication processes: (i) Photolithography.

(ii) Ion Implantation.

Briefly explain about crystal planes and orientation in MEMS.

(i)Apply the longitudinal strain for pure bending.

Formulate the reduction of electrostatic forces generated by a pair of parallel-Plate

Describe in brief about

Describe in generalabout intrinsic stress in MEMS.

Discuss in detail about torsional deflections.

Examine the relation between stress and strain in brief.

(i)Examine in detail about photolithography process.

(ii)Give Czochralski (CZ) method for producing single crystal silicon.

Valliammai Engineering College

also give the details of mechanical properties of silicon.

The intrinsic carrier concentration (ni) of silicon under room temperature is

Unit II- PART-A

List the two types of CVD?

List the two configurations of electrostatic transducer?

Name the factor determines the pressure sensor sensitivity?

Name the materials used in fabrication of parallel plate sensors

Define electrical spring constant.

Discuss the relative disadvantage of electrostatic actuation?

Give the major advantages of electrostatic sensing and actuation?

Summarize pull-in voltage?

10. Describe comb drive device?

12. Illustrate the principle of operation of electrostatic sensors

13. Infer, how the parasitic capacitance avoided?

14. Explain the principle of electrostatic actuation.

15. Explain principle of capacitive pressure sensor.

16. Justify, nonlinearity can be avoided in capacitive pressure sensor.

17. Show the advantages of capacitive pressure sensor.

Valliammai Engineering College

20. Design a pressure sensor suited for parallel capacitive sensing.

Unit II- PART-B

Explain the design and fabrication of electrostatic sensors

With neat diagram, explain any two applications of electrostatic sensors

With neat diagram explain (a) comb drive

(b) Transverse comb drive and

(c) Longitudinal comb drive.

Describe in detail about the principle and working of electrostatic motor.

Describe in brief about capacitance of parallel plates.

Describe the Equilibrium position of Electrostatic Actuator under bias?

Quote are the applications of comb drive devices?