SBASSE, LAHORE UNIVERSITY OF MANAGEMENT SCIENCES

POWER ELECTRONICS (EE 452/552) | FALL 2016

Assignment 1 | Due Date: 23-09-2016 | 1700 HRS (Friday)

Q 1. A series RL circuit is excited by a source vs(t) as shown. The supply voltages equation is mathematically expressed
as [15 MARKS]
Vs(t)= 3u(t)- 3u(t-2) + 3u(t-4)- 3u(t-6) +;
a) Sketch the followings in the range of 0<t<6s
I.
Vs(t)
II.
IL (t)
Now Equation of Vs(t) is Modified to
Vs(t)= 3u(t)- 3u(t-2) + 3u(t-2.1)- 3u(t-4.1) +;
b) Repeat the part a. for this Vs(t).
Q 2. The figure below shows a circuit for a full wave rectifier using a thyristor. Given that the firing angle 1 for U2 varies
between 0< 1<90, and 2 for U1 is (180+1):
Note: These angles are given w.r.t input sine wave.
VS1 amplitude is 12V, frequency is 50Hz.
a) Find the maximum and minimum DC voltages possible across RL?
b) Given 1 is 30 degrees, find the DC voltages across RL?
c) Find the value of 1 and 2 when the output DC voltage is 4V.

Q 3. A power diode having a cross-sectional area of 2cm2, resistivity () of 85 -cm and a drift region width of 50um, is
forward biased by 1000A current that rises at the rate of 250A/us. [15 MARKS]
a) Assuming no carrier injection takes place until the current reaches its steady state value, sketch and dimension the
forward voltage for 0<1<4us.
b) Now assume the carrier injection commences at t=0 and this causes the drift region to drop linearly in time from
its ohmic value at t=0 to its on-state value at t=4us. Sketch and dimension the forward voltage drop across the
drift region during on-state (NDRIFT=0.25V) for 0<t<4us

TOTAL MARKS: 100

Submission: Drop Box Outside Power Systems Lab

SBASSE, LAHORE UNIVERSITY OF MANAGEMENT SCIENCES

POWER ELECTRONICS (EE 452/552) | FALL 2016
Assignment 1 | Due Date: 23-09-2016 | 1700 HRS (Friday)

Q 4. [20 MARKS]
a) A controllable Switch is connected in the figure given. The DC current source approximates the current that flows
due to inductive energy storage. The diode is assumed to be ideal.
i.
Sketch and label the Switching waveform (clearly show turn on,
turn off and on state transition).
ii.
Drive an equation for Energy dissipated during turn on (WON) and
turn off (WOFF) switching transition.
iii.
Drive an equation for the average switching loss power during turn
on and turn off transition.
iv.
Sketch and label the waveform for the Instantaneous Power
dissipation occur in the switch.
v.

vi.

Drive an equation for the average conduction loss power during on State.

What will be the total average power dissipation in the switch?

b) A circuit designer has to decide which of the following two devices is suitable for his chosen application described as
follows:
Supply voltage
400 V DC Rail
Maximum load current
8A
Duty Cycle
50%
Switching frequency
20 kHz
Typical rise/fall time
100 ns
Maximum junction temp.
150C
Typical Casing temp.
110C
Typical ambient temp.
40 C
Device available: 1. MOSFET -IRFP450 2. IGBT - IRGP430
Using the data sheets uploaded on LMS, calculate the conduction and switching losses for each of the two devices. In view
of the results calculated, which device would you recommend for this particular application? Justify your answer.
Q 5. Perform switch realization of following circuit. [20 MARKS]

TOTAL MARKS: 100

Submission: Drop Box Outside Power Systems Lab

SBASSE, LAHORE UNIVERSITY OF MANAGEMENT SCIENCES

POWER ELECTRONICS (EE 452/552) | FALL 2016
Assignment 1 | Due Date: 23-09-2016 | 1700 HRS (Friday)

Q 6. A Power MOSFET (250 V, 30 A) modulates power from DC supply to R-L load, given

[15 MARKS]

RL=7
PLOAD (AVG) = 2.24 kW
fs = 30 kHz
D=0.8

Small signal input capacitance

CISS=2500 pF,
Small signal output capacitance COSS=600pf,
Reverse transfer capacitance
CRSS=200pF.
The MOSFET trans conductance is G=9S, gate threshold voltage VGS(TH) = 3V & the on-state resistance is RDS(on) = 0.12
W A DC supply of voltage VGS=10V, a switch SW and a resistance RG = 20 W.
a) Comprise the equivalent drive circuit.
b) Calculate the turn-on time of the MOSFET
c) Average power dissipation during this turn-on action. Use approximate values for your calculation.
Hint: CISS = CGD, COSS= CDS + CGD, CRSS = CGS + CGD

TOTAL MARKS: 100

Submission: Drop Box Outside Power Systems Lab