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NP32N055HLE, NP32N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
PART NUMBER
PACKAGE
NP32N055HLE
TO-251
NP32N055ILE
TO-252
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 24 m MAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 m MAX. (VGS = 5.0 V, ID = 16 A)
Low Ciss : Ciss = 1300 pF TYP.
(TO-251)
VDSS
55
VGSS
20
ID(DC)
32
ID(pulse)
100
PT
1.2
PT
66
Note2
IAS
28 / 21 / 8
EAS
7.8 / 44 / 64
mJ
Channel Temperature
Tch
175
Storage Temperature
Tstg
55 to +175
(TO-252)
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
2.27
C/W
Channel to Ambient
Rth(ch-A)
125
C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14137EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
1999
NP32N055HLE, NP32N055ILE
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 16 A
19
24
RDS(on)2
VGS = 5.0 V, ID = 16 A
22
29
RDS(on)3
VGS = 4.5 V, ID = 16 A
24
33
VGS(th)
1.5
2.5
| yfs |
VDS = 10 V, ID = 16 A
16
IDSS
VDS = 55 V, VGS = 0 V
10
IGSS
VGS = 20 V, VDS = 0 V
10
Input Capacitance
Ciss
1300
2000
pF
Output Capacitance
Coss
180
270
pF
Crss
90
160
pF
td(on)
ID = 16 A, VGS(on) = 10 V, VDD = 28 V,
14
31
ns
RG = 1
20
ns
td(off)
40
81
ns
tf
7.4
19
ns
Rise Time
tr
QG1
ID = 32 A, VDD = 44 V, VGS = 10 V
27
41
nC
QG2
15
23
nC
QGS
nC
QGD
nC
IF = 32 A, VGS = 0 V
1.0
41
ns
58
nC
VF(S-D)
trr
Qrr
50
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS(on)
10 %
90 %
VDD
VDS
90 %
BVDSS
IAS
VDS
VDS
ID
Starting Tch
= 1 s
Duty Cycle 1 %
PG.
50
10 % 10 %
Wave Form
VDD
D.U.T.
IG = 2 mA
90 %
VDS
VGS
0
RL
VDD
td(on)
tr
ton
td(off)
tf
toff
NP32N055HLE, NP32N055ILE
TYPICAL CHARACTERISTICS (TA = 25 C)
70
100
80
60
40
20
0
60
50
40
30
20
10
0
25
50
75
25
d
ite V)
Lim10
=
10
PW
ID(pulse)
ID(DC)
1m
DC
P
Limowe
ite r D
d iss
=1
10
R tV
(a
ipa
tio
1
TC = 25C
Single Pulse
0.1
0.1
10
70
64 mJ
60
50
44 mJ
IAS = 8 A
21 A
28 A
40
30
20
10 7.8 mJ
0
25
100
50
75
100
125
150
175
ID - Drain Current - A
1000
)
(on
DS GS
75
100
50
TC - Case Temperature - C
TC - Case Temperature - C
100
10
Rth(ch-C) = 2.27 C/W
1
0.1
0.01
10
Single Pulse
TC = 25C
100
1m
10 m
100 m
10
100
1000
PW - Pulse Width - s
NP32N055HLE, NP32N055ILE
120
Pulsed
Pulsed
10
ID - Drain Current - A
ID - Drain Current - A
100
TA = 55C
25C
75C
150C
175C
0.1
VGS =10 V
80
5.0 V
60
4.5 V
40
20
2.0
3.0
VDS = 10 V
5.0
6.0
4.0
100 Pulsed
VDS = 10 V
10
TA = 175C
75C
25C
55C
0.1
0.01
0.01
0.1
10
100
Pulsed
70
60
50
40
30
VGS = 10 V
5.0 V
4.5 V
20
10
0
0.1
10
100
ID - Drain Current - A
0.01
1.0
30
ID = 16 A
20
10
10 12
14
16 18
20
2.0
1.0
50
ID - Drain Current - A
50
100
150
1000
50
VGS = 4.5 V
5.0 V
10 V
30
20
10
100
VGS = 10 V
10
VGS = 0 V
1
ID = 16 A
50
50
100
Pulsed
0.1
150
0.5
Coss
Crss
10
0.1
10
1000
tf
100
td(off)
td(on)
10
tr
1
0.1
100
100
100
10
80
1000
10
ID - Drain Current - A
1
0.1
1.5
1000
100
1.0
14
60
40
10
100
10
8
6
20
4
VDS
0
1.0
12
VGS
VDD = 44 V
28 V
11 V
2
ID = 32 A
12
16
20
24
28
40
NP32N055HLE, NP32N055ILE
32
QG - Gate Charge - nC
IF - Drain Current - A
NP32N055HLE, NP32N055ILE
PACKAGE DRAWINGS (Unit: mm)
0.60.1
0.60.1
0.75
2.3 2.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.50.1
1.0 MIN.
1.5TYP.
+0.2
1.3 MAX.
2.30.2
0.9
0.8
2.3 2.3 MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.5
1.3 MAX.
13.7 MIN.
7.0 MAX.
5.50.2
1.60.2
1.5-0.1
6.50.2
5.00.2
0.50.1
2.0
MIN.
5.00.2
2.30.2
1.5-0.1
6.50.2
+0.2
2) TO-252 (MP-3Z)
5.50.2
10.0 MAX.
1) TO-251 (MP-3)
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Remark
Body
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
NP32N055HLE, NP32N055ILE
[MEMO]
NP32N055HLE, NP32N055ILE
The information in this document is current as of March, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 00. 4