Solucoes MOSFET

Chapter
cAPtER 5 PRoBEM soLUToNs

5.1 ,.,= 2-10 nm
:
:
ot
Condition l:
:9:
4(fr
58
l0
2q
so
(v / L)ov.| __
|2.5
Condition 2:
\F'
2900 (m2)
:
.
. ,.':
{A(#)
:,"(--L,_J:
: utf)
5.4 with
10_6y / L)ov.|
2,
m'/lF[!L)
l:24-54n
5.2 C.' : 6 ff / m2 Vo, : 0.5
L : o.25 n lDs = 0 v.
w : 2.5 n
Q : C.,.W.L. Vov: 1.875 fC
,ti:
2(n +
pF
Area = 580
5.3
Two conditions ned met fot Uov and rD's
34_5 pF/m
c|=
oJ
For
5-l
(-,
__,-;
x lo
60y
L)o.2
|( + (w / L\o.2
2'5
f condition l is me cndition 2 will be met

since the over_votage can aways be reduced to
satisfy this requiremet. For condition l, we

walt to dcreas
w as much as possible (so
Iong as it is greate than or equal to 1), while
stil meeting all of the othe. constrains.
This reqies ou usig the largest possible
voltage. Uo,.,
volts hat
1,.r,
w':12.5
-,
oy' l
1.8 Volts,
so ,-, = 1.4
]2l=q'
l4
Condition 2 no can be used o nnd G.2
t2.5_-_J.28
2.5
w/L 12,5 /1,4
tcs'z : .68volts + 0.68 S
5.6k": 5 mA/V'? Y,:0.5 V
-.
yo. smal, compared to
applies:
v,,, . (5.3a)
'c.'l(l)v""1
(a) %, is doubled -J rD. is ha. factor : 0.5
(b) wis doubled J ,sis halved. factor : .5
(c) ly and are dobled _J rr iE unchanged.
factor = 1.
(d) f oxide thickness ,", is halv, and
Small
io
U6s
1.8
l,Ds
kn ('!65 _ v ) Ds = k" o
Ds
8os:!:k"lon
rDs
D
C", is doubled. f W and a are also halved, r^

is haled. facto : 0.5
5'5 The transistor ize will be minimized if ll
is minimized, since yl appeais i the
equations that must be satisifyed, we ca
minimize ( vz). c|early e ant o minimize
by using the smallest feture size.

=
o.l8m
rDS
rDs
k;(|v
L)(eS
k;(w
L)ov
_ V)
2'5
5A
2.0
375A
1.5
250
l.v
125
ucs
0.5V
Us
Chapter 5-2
(v)
5.7
ln saturaion:
()
(ms)
v",
vou
8r
0.5
l.
.5
2.5
4,0
.5
t.0
5.0
2(n
2.O
t.5
7.5
t33
5.10
2.5
2.O
IO
()
tnx
()
^:!:'(12:!1')
2"Lo2ov
i^:1x |'
iD:
Y-
z.z
1 ms
=
=
.'.
v Ds
[*(0.(',,',.
- i',i,))]-'
j=L,v,irl
[*,(ff}r,,r,.r
lo"(u
*-
_t
if
ifV o5
O.8
i^( -
0.5
yov)
-}_
kn0ou
yDs sa,
=
l.5
k'(vo
""= _!_
5(n
= k"ov
0.378
V.
0.878
65:'1.2.:06
= V,o,t,5: Ucs'aos
!-.
(-0.5)
0.7
: ,=
(c)
= t m in saturation mode
For
- vo]o
u,
...k^
_o.1 .
(a) lv6rt :0.5 V.
knUo
5.9 5 5a1 = V"'

vo\' = vcs _v = 2.5 | =
m/:
l.05 V.
= (-1.2)
-_
Vo
:1--r,--=
''
0
5'29
0.55 V.
(|b'for eD
k.(v ov _ o.8vo'
fVos:
/'
: i': !.,|'
\c) 8^.
V'r:
6y
= 111rsn.2o;:
265 (A)
5.11 p-Channel
ko0o'
= 111^19'5o;:
vr, 0.55 V
o,
Q270": -L
vDs: o.5vo+r^=
vr, :
o, =
m 'm
= 2o.k
0.8 m
:.ov =
\.ru ",)7-'
k'(vov_Ds)
if Vo, =
bl Fr
lz avaiD
Ds1 Ds
0.25 m
C.,
k'r =
W > 2.38 r
s..,:
"'
l,," :
: 6 nm
12
*l = l A'/2 o< Ucs<5 v.
;:(;s_ v,)-
.l25 mA)
u : 460
'-" 16- a-JL
'"" L
v .s= 466;
v-J
^
]4.5
rF
/m
{a) ", :
t",
6 nm
= 5.75 / lo'()
: 20 nm y, : 0.8 v
L,'n : 1 m small ,Ds
,,
r;: =
ll.5 l?
io
o.1
2io
( uJ
_ U)
= 8mA/v2
v, = -16 mV,ohmic
ko(o65'
v'
v.
mode
"o,)1"^1
= 39.6
.5
For o= _2
V,satmode,ir: lmA
chater 5_3
2ox2.5+ =
L
5.12
o:
\'"<vor_
for eqal drain currents
www
v,),
- 0.4I - r.
For sma|I
v",=..
Vos
,,DS -- --'7D --
V,\
k^'
nm,
= ".c"'
io
k,Z|VcS _ V,'
50X0-6X20X(5_.8)
ro, : 238 dl Vos: rDsxiD:238 mV
!'"
z's
50 cm2 /
"'
1o-t
191.1
= "'-
Y65 _
V- <
ku'o, _ v,)v
19t.7
x lOj x
v2
Ds
.vbsf
10
-1xl,l -
-o.r
t2J
(b) satuation region: yDs
= 1.62 mA
(c) riode region:
7.Jm
> Vcs_V,
" _ lx o'l x l 6 loy
v,
"'e-:
fo the same performance of a p-channel

:
, =
= lo
(a) triode region:
,,-
" _
W"LL z's=+b
9xloe
,-
lo _
,.,
X
50o X 1o..4 X 3.45
Vs
_l
device
5.14
y.: o.7.
#_?
nP
i-!/n,
= . Lt
- ,,.-
= nco"
unco,'}=co,?
5.lJ
k|n
50
y,. <ycs _
(2_o.7)2
5-15
(nm)
:,
[)
'm '
..
:+ s
plm
,;(s)
J'
500
t0
1.45
6.90
9.58
3.3
1'73
345
479
1.73
3.45
4.19
6.64
2.50
0.625
0.324
0.169
2.5
1.8
1.3
o.'7
0.5
0.4
o.4
t6
6.9
4.69
2.69
80
17.3
a.4
1.50
12
2'7.7
26-
20.7
4n
7.72n
14.8n
2.6
cmvs
-.(#)
r:
'
A (m)
tuL=fi
L
v,, (v)
(v)
,D
(mA)
a:
1or
o=
DS
\"1oo
DD
v,1'z
P (m w)
Voo
r)
'm '
dvices
ch !p
Chapter 5-4
io=
|9|.l
xto x [1s
l.6t m
(d) saurain region: y",
i^
- lx
Ist. X |0
1"1.'
5.16 sat mode,
io\ _ l -. I
\e] "o"
}
^,
o.z1
xo.z _
(5
r,'= [
5.17 4.4.l3:
/r
'w
(V,,{v,)l
theefore:
'- I0_ Vsz_l

v."'v,
2 lJ l
;'_
ycJ2
:
3.5 v
,os _ Vcsz_V,
Vcs_ V,
|0
\o.zl
.7)2
Now for a deice \ith twice the \idth:
_
r Ds2
rDs1
for V,;s
slopeaUov=lv.
|t 2(v
|v 1(
GS|
u'
= 1.5
!! = 2_,n",: J! : s
f
2
osz
for ycs = 3.5
v .rr,
5.1t v,,
= .5
to
f:
!=omlz
safuration me
zr5>(65_V,,)
for
iD
6,
fr
,,, =
65
lv
ohmicmode'
= 12.5
1.0 v and ,Ds > 0.5
:
:
50
l.5 v,
5.19 gien
(f"): "-"^-!"j,
.'.
i,, =
and rDs
0.4
gieni,,=.1 mA,rs
.'.
l. v
m, 65
Sat. mode
,os
65
l.5 V,
Sat. mode
find
ti
and
io'
o.4
i,,
0.1
: (2 v,)'
( 1.5 - v,)'?
5V?
sol=lv
2io
k"=
(,cs v ,)2
5.2o '=
= 0_8
m2
lz v,=o..
for v,;5 : ,s : V.,,nn,-' : 1.8 V
22
=2matL=.18m
0
0
i"l
lv
_&l
= ln
For pmos, change
Ds-)
ou''>
SD
ro-
|v ,o|
r : )''Yro.,'
o.92
s.to
v,)'
'
tfi
5.21 n riode region:
i':
k''(Q*_v,)'",_+)
_(2 v')o.| _ o.o1 /2

i'' = 160 (4 _ V,)o.l 0.o1 /2
i,r
:0.75V+v'=0.'58v
'
Chapter 5-5
': :
if k',= 50 N2'
Y:ro
L
f
.75)0.I _ 0'0|l
LL
6 = 50
if we replace V65 by V and
i : ['0
3v, ,r = 0.15
U6s =
hen
,:(#)
^.-2
_ 50x Ixlz.zsxls_Llll
i-"12
= 163.125
F v6,
\*,Yr{vor'o,)'
= 3
reach pincboff at
11"
"1"nnel
v=v_v'=34.75
= 2.25 V
.D: -I..,W.
.,.2
_
nl1,as
v'
'
= ! x so x |o
2
_|v,D'z
':
l
ku*
2/ _|')
vhere
lz-l + v_-
for which:
>. 2-252
1,
t' : ,r'
5.25
l..] m
= 1.3m
522v'=o.5.
0.8=rcs1.8v.
largest ,DJ for ohmic operation?
: es_
Ds<ov
.'.v21
_<
0.3
5.23 Eq. 4.15:
V, =
,,,
l.3 v.
ill ensure ohmic mode
r,, :
${vo, - )
or|
rcD
r'u""]-'
so,
0.3
io
'"
" :
'
Vor:l.lV+rrr:l0k
7o, : llV+rr. : 1
=
a)
rrs
1 r,, = l0 k
so
ifa
is halved, r is also haled:
50rDsS5k
.) ,o, o
ft
so ifboth Wand L are halved,
says unchanged and so dos
l<r,5<10k
S.24 According to eq. 4.17 |
rr.
VcD< y,
for satura-
tio region. since %D is zero in Fig. P5.24, then

he deice is always in saturation region:
'''
'k"@cs
;o^
'
1v oo _ V,) _ 5l2
\'11v o'
(YDD
_ v,)2 _ 2(v
Y,)
: o''>(Voo
so if /is haed. r is doubled:

(V
+ saturation
v\1
= ,s =
in
2rDJ20k
b) r"1
c5
...
oo-V)2
V')
DD
_ V ,), +
2rf
Chapter 5-6
* ,/ith yD. negatie' drain and source are reersed
s.26
o show he deice is in he sauraion region.

5.28 cuoff-saturaion bounry is deermined by
?o. = ' hus r,,, =0.4volts a the boundary.

sauration_rie boundary is deterrninod by
0,"'= V,' ad
V,','= l volts, and since
"'=
,= ,'D + r,J, one has ,.;5 = 0.4 + l. = l.4
volts at the bounday.
'
(llx-4i
.
'"-_
\*,1",,_v,1'
0Ds
v+4
v,+
v+2
0 2
Y+t
v,
5.29 sa.
3k"
1k"
5.27 '5: vD-v'

V,,": V,,,- V, = y", three
Case
5,
4k,
V,o= Vo_V'
v,,
v,,
v."
+2'
+ 1-
+ 1.0
+ 1.
+2.5 +2.O
+ 1.5
+ 1.0
+2.5 +t.5
+l-5
+o-5
l.
v,,"
1.0
+0.5
^(y)
lw\
-0.5 - t.0
()
A,2% chan9ein
l.o
+ t.0
+ 1.0
1.0
l. 0
+ 1.0 sat.
.5
.5 +0.5
+ 1.5
1.
l- + -
+2 +5
"''- \)""-
+2,5 + t.5 + l- ride-
l. 0
+ t.5 +o.5
ct-off.
+2.O sat.
triode.
= +2
v)2 v,,..
in
i,
(b)
l0 mV
change in
"' _ v \|'".^v
j*"(f),*, -v,\'1.".
t.0
+o5
"()z
.5 +0.5 +.5 sa.
+2.5
\r
{)
sa.
5V, ,;5
l.8
"
operation
.0 cut-off
+t
l l.2 l.4 l.6
^(:)
()'
Region of
v,,,
\(f)t'
io
1.0 According to Table 5.1,
;r
me Vp
are
06 .8
.4
iD
change
2^V
(oe s
(f)
v,),,,^
roduces a 2% chane
inV' (l%) podces
a _2%
Chapter 5-7
530
for
L = 3 n'. V, : 50x3 : l50V

V" : 50 :
,^:
" o
1.05m4
,',r.=
i^
n
,,:
'
lmA
lv
fo
r,
:2=
:-.l
1875
from
,zDs raised
from 80
:!=.sv.'
v
AgJ
:20t
.:" ,rs|
, |"cs .-.
V=oro: 2o.
1875 k
0.08
1v
to 82.13
2.7 qo chae
ln
ln order o redce
z.tr ,"l
to
5v
iD.
by' a factor of 2. lo has
to be halved, or
,o: :
o..,A=i,= l.
|!
o
lD
doubled. n order to double ro,
ro
50k <
-]p
ID
in _ o.l
iD
< 50
+ o:
iD
y'
20
here
"^' :
process dependen lso. =
2c"
].
lp
herefore
rchiee desired r" (which iS 4 tires larger) we
shouldincreasea.
L : 4x 2
ln order o keep
unchaned.
1o
= 8 m
ut
has io be
6 m
: 2ox l'6 :
V"L
32
Vo'
}(V65 ) :
0.5vdeic
in saturation region
is completely
be
=!=0.03lv!
V
2s"
'
/,l
L : 23 =
5.34 V
ro
i6 _ 2 A. ?+
D
,lo
5.32 V :
: l m
length.
ro
r., has to
uivalenty
doubled and this can be done by doubling the
ko
"'
increases
A.
531
=a
, ,;
raio has
'n
l ', / '.2
1' ".'
: ! x t:o
2
r.
-!90.5'
1.6
102.5
,re
,^:L:-l_:tqz
" io 162'5
,n '
"
rn,o'
in-
l97 k _
}io + l _5.l
stay unchang. Therefore:
: 4x 0 = 40 m.(so lseptats)
f
Vo : roio = 0.5 M 100 = 50 v (for
5.35
,"
original
standard)
V1 :
nw
4x
0.5
Mx l= 20v
(for
device)
lg ro=
5.33 : o'o2 .l
l:1m
Vn: tnL+ 'l = 50V
*ew
50V for
ro
|x\,{rv^_
v,l'l'
|\x,:'{v."f]-'
|xi'{f,\v"")'l'
: ,.
Noe that quadrupling v and a had no effect,

btt decreasing he overdrive voltage by half
icfeased ahe output resistance by a factor of 4.
See also Fig. 5.17
Chapter 5-8
5.36
To oprate
in saturation:
+5V
1
J vrr=
Vos Vos _ v,
2
QI
a)
,,
v Ds
Q2
) D
Fof y,{ > y^.in

< lo
ABc
_
- y"" 15 2lv
"
io, 0.0liD I
: ;o, 2 :
V1.;"
=
lo
io,
2g8
:+
v'
l k
/65
v
v
o.ot
lmA
5.38
_ v,)v
Ds
:sf
3.5V=
_ y,)?(1
3-33 m
o.tv
10
3.5| _ o.52mA
0-? YD = -5v < -.1.5
saturation
l2
l2
ir= : 3,;1.5, {l
-l mA
o.5v2
.2 mA
1 k l(m k
| 0.02X
_
0.02
l.V
5)
.54mA
< _3.5
l0)
o.59mA
: -3v ,sc= 3v Y, : lv
Ds = _4 a3n : 4 Va = _50V
_0.O2V-I
i' :
_ y,)'?(l
:ioL ro
!'Y-+
r'
,w
*"
l.39m
+ yDs)
l)2 +0.02X4l
2.16kPvL
5v
+ yDs)
:.st't . o'o2/
d) u, : _5 *yos =
saturation
l]
of satration
"Yr{vo
Vcs
5.39 ucr
10
_ 1v' > _3.5v
i, :iY80x(].5)(l
V/m
- 298 V --r 298 = o X L

^m
+L = 2.98 m
Ds
l.svyDs=
\*
c) uD
v^
o.1
oYr|tvos
edge
_
i^
'2
]v
then. to obtain
.=9
: 80 5-(_1.5))x1-l-}x
'v
':
: ro.io,
'''
wttnr^
nMOS
b) ]D=
5.37
= 0.24 m
t iangIe'
B = r
if Vo :
,,
the difference i drain currents
To calculate v consider the
b)
_ (_15) or
+ riode region
For ay value of between 0 and v-'. the

slope \rr'ou|d be seeer and he difference in
drai cu.rents would be >%
Vo-'n * 2
< -3.5
5v
= (1.01) i,,,
*,"*
V2
Chapter 5-9
This table blongs
vs
vc
vD
vk
lv
v,,
Region of
Operation
+2
+2
ov.
ov.
2.
cutoff
+2
+l
+lV.
ov.
2.
cuoff/sal
+2
+2.
1V
2.
Sat
+2
+l
+2.
1V
lv.
Sa/ohmic
+2
+1-5
+2.
1V
0.5v
ohmic
+2
+2
+2.
1V
0v
ohmic
_V,
5.40 pmos V.=
to 5.4o
5.4t
s.z
+2.5V:v,
.'d
!
TD
.','_
oto*:
*-'J=.,
,,ffo'
/i"l
\h)=
pmos
v,, :
-0.5v.
uso = 1.5V.
Ucs>y,cutoff
.'. Uc > 2.0V.
Uco
of
i*o'.
(b)
r,,']l,"
t2m\
,|/
t"ar \+v/tl.
0.3/co(_0.3%c")
5.43 case a, assume, sat, ratio gien l, values
Q lv,lf_
cuoff
Sat.
$vo
0 0.5 1.0 1.5 2.O
; _
2.5
case b
roo
a
'9 v'
= +l '
same procedute except
UcD
y|
"'sat'
use ,'
This table
Case
Tr
(v)Ys
()vc ()vo
(A) 1o
type
mode
(/v2)
()v'
l)
os
sat
2(n
+1
400
4.5
sat
50
_.5
rnos
sat
450
200
-5
8)
-2
72
-3
270
c
d
to 5.43
.l
,v= 5'v= 4'
0.5V+ohmic
Ohmic
!dk' 2
dk'"\
= V,+ ohric
:.7tcDs
c"
for = +1
Cutoff
=e
-o'r. =
,w
c.'
,o0
-1.5
sat
mos
sat
-l
100
+O-8
sat
mos
sat
ohmic
chapter 5*1
(note
rDs neg)
lv)\z
12_
(3 _ ly,)':
1./6e
>
ca(e c
Uco
-1.5V
lQ=ly.l :
450
- lv ))'
r.1 - lv,l)'?
0 (
|s, dt -
=l0k
.'.sat
12
:
- l.0V
.5.
: 1.0,
2oo
800
-lvl
withV2:
l.5+.5)v.
0.lm
1V.
(c)
+2.5'
.'.sat
case d
lk-tz y.)2
2"
sat
onmic fr,[t+ _ v,'", _
12
27o
(afer faiiing assumption that both cases arc sat.)

5.44 all1uc51
: l-l : l
v,
/ : 0.l mA sat' mode :
1v,|
0.5
(a)
v,
Vs: Vso: +lV.
V: Vse : + 1 v,
for YcD
0.5
n,',,,:ffi:s
V1
For
: Va1:+lV
lv'
'-,. = 2'5 19'5
,
U.I A
with V1 : +2 V.
.,.
dpends
2.5
(d)
sat, ucD = 0.5, so
n,'...=ffi:s
Rc
= lo
1.25V
on gat leakage
V 0.5-l
.l mA
= o k, making
vF+2.
(b)
+tv
- 1.25V
v2: l -vDS: o'
V: +.25
: +0.25 V
.
for YcD
V
= -0.5
Rr'... : 5
- 1.5V
n,'...=ffi:s
Vro
t.25
= l0 k vith
t.25 +0.5 + r].,
0.lmA
Va: _0'75'
chape 5_11
5.45
: Vo''
Vo''
+2.5.
:
i _ l.8v_.8v
90A
(b) For
^rl .,
vD
:'/DS2
ye
_ y,
11.1
, ' let Veoz = V,
(edge ofsat.)
= 0'8 .
Ves
Vosz
o'3
loll: 18 m
: -W=
io, wl
_
1 = 1'8V0.9mo.3V = 1.67 k
'
-,t
s-47
_2.5.
v,:1'k'":Al1
,=3my:m
0
For o : 1-25 A' Vo :
veD = o+ s.
(v",
|/S
v,)
1.5
=
.
l,
'' :
l -'|)
0,
o.s
R, :
10 k
v.
lrr'
= 2.5
Rso
Rs:4k
k" = o'4rn / 2
Vr:0.5'
:0
sat.
boundary V6p = o.5
'.. Ln^
_
1'
2" ,L l.
: 'a a
5,,l8
.5v . =
5.6
1,
'
= oRo
._s
"^
1mA, y,: .5Y V-: l.8V
To opeate at the edge of saturation, vDs must
ual yo
+1.8V
k''
{'=''o
0.5
RD
0.4m/2
'
L': L': o.36rn

, = 1.8m
(a)
Veo
: o
90A
so
is in saturation
1W,
) k"vo'' v'f
vos
=
vc!: vt _ vs: 1.8 - 0 = 1.8 V
V-= V.'' : l.8 ' 0.5 : +1.3 v
wih y,' : v- : l.3 Y
Voo- Vo _ .8 _ l.3
^ =
5 tt
lmA
"
n
chape 5_12
L'
s.49
+2.5
L2:
2.5
o.25 'n
l.8
0.25m
2.8 k
.for Q,
0.25m
_ l( zsl , v')1
'Ll
2
0.5)'
.'.W':8L':2m
for Q,
0.-25m
,,.q.l
v'l
-(r.8-1.0-0.s)L2
-0.6v.
": ,-l'
L : O.25 p,rn
i, :
0.8
.'. Wz
mA,
/, :
1.5
V,
/or,
l20
0.8 mA
-.a:.L*'I
2 " ''
L:
l
L
22'2L
5.6 m
5.51
Rfer to Fig. 5.5l
R:1'5v:1.875k
!2s
W.
v,:
make
l.5 V
tw.
l
: )" lz0' -J(|.5 - )'
l/,:8m
Vo'' : 2
0.6t2
l20
|ry2
25 pr\
: !xL',z
'2t
I)
2 'm
or, : l'5V
y1 :8m
5-50
+2.5V
5Jl
Refe to Fig.
t.8v.
+l_v
1,
/D : |0
"C,,,
o.5
25o A /2
- 6lD+
Therefore
VGS
x5_6!^_2l
r^:1xz
"2
-,+ 362D _ 3,tD+ 9 : 0
+ 1, : 6.395 mA or 0.633 m
1, : 0.633m is not acceptable, because it
results in ,/as : 1.2 v hich is lower than
V' =
y'
5.24.
Thse
are
0.395
6D :
m:0.4 m
7.6
rsults show that althogh
double /D
V, nd
k,r
is only decreased by 2ovo and V D
is only increased by 8.59lo. Therefore th conclu-
Chapter 5-13
sion is that the circuit is tolerant to changes in

device parameters.
5.5-1
-"*
-u"
I
L=
mv : .8
.'.
R = 1750
=9
/Ds
rDs + R
V: lo_4x2
ncircuita:
assume satuation:
^:2
"2
=
V+R6, : 4M,Ro, : 6M
,^ = .5 m
3s.s
5.55 Refer to fig. 5.55.
+5V
*t
v\
L''
..
+l
Vo
f': "o
oL,ues
fns
R^
'. - _
r-f
to
ll
= !
Vo'
V1
xv^._2^'
= -4y '
Va5
} Ves'V,
o our assumption w:!i coect.
,t^:0.5
= 1xr x,r,-.+ r.sl'
"2
Vo,
''Vs
= _o.5 v
-2.5 V or-0.5 V
is rejected
because it is
less than r.)
Vo'
_2.5 v
+ ,/s,9
8.5 v
circuit b:
: !"Ixv^"_2r'=
^:
"2 |
V6' : 3'4 V V1 : 3.41
circuit c:
D:2mA+Vo' = _4+V'
_ l0 8.5 1k
"
.5
R"
5.54
Vs: _lox2jx2:
Voo= '8'
'5
n circuit d:
D:2mA+Ves= _4+Vu:6y
=>Vr:Vu_4=2
f we replace the current source with a resistor
in each of ahose circuits:

n circuit a:
Vto--1
v,
_4_-(_l0) 3.ol
R_
kf)
(by loking at he table for l9a resistors)
o.s
v.
no recalclate ID:
k": 4 A/\'
=0
for , = 1.8 ., make
U:50mV
lo :
\x
0 ( 10+3.olD)'2
: 8 3.011,
Ves_V, =
rr, :
50
x (VS _ V)2
and
2o =
(8 3.ol)2+a
= l.99 m + Vz = 2.o4
Chapter 5-14
_4'ol
(c) same as (a), except
n circit b:
l0 _ 3'4l
V:
6.59
k:
6.65
iD = I mA
: -280 V'
(d)
then
rcs = '|o_
=
6.65
1't,t 'o'5 22+t

2
vr = l0 -
x 0.99
6.65
3.41
= 0.99 m
n circuit c:
: 10
vcs:
:3.0l k.
(10 + 3.01/)
l: ]xlx
2
1o
l+ }.ol/+
= l.99 m
V =
|0
_ 3.0l X l.99
4.0l V
Vs: _1o+ 2.5k .99:
5.56 l parts
so
y.
o.s
=+
lV.
.l/v'
(e) same as (d), except
_5.03
n circit d:
n = ? : t
2
/(2)(l0 ) * n.*u.
V.:V
65
"
2)'z
iD
Vs:2'80V
(
is still 2
, : s ,
v.
y,
+5V
o.8,
(a)
+5V
1
V,':Vs:5
--lL---*
f-v,
lA
I
(b) sane as (a), except
Vz:
|.432
'
_ (1)(})(o.5)(ycJ _
25V;s- 39vcs + l\.
Vo,
V, = -Ves: -
-25(V'?es- l.6ycr
: 1 A
.8)'?
+ 0.64)
ycs
.19, 0.37 (bad root below threshold)
V,: *
iD
1ol k
1.19v. (/D:38.1 )
chapte 5-15
G)
5.57 (a)
+5V
v,
: l
k',
_m
:0
+5V
2.5V
see (f)
o:
_ (o.25\2os _ l.6ycs
o:v2 cs+ 2.4vcs V
o,
V, :
+ 3.361,
V
o,
0.64)- vcs
19.36
5.761 bad root < Yr )
3.36 V. (1e
1.64 mA )
(h)
+5V
+
-{L----*
L-n
- 5V'
o = 5-25(vo, 0.8)2-yas
(o
Va:
-Ves
1,
1.19 V.
111(j)1syIvo,,-rl2
2.5'2_4ves2+o
+ 1.6
V.
(0, bad root
0. mA
33.1
_o.9 <
Vz: _l.6.
(lo0)(;){o.s) tvo,_o.]'
V.
csz
V6o2
Vor: _5+lD
Ycs = + l.l9
-2.5 +
V, : +2.5-Vorr:
se soln' in
o:
--
Vor, = t1.6V
:5
o asume sat.
Vz: _Vesz: _2.5+olk
/o
lK*
vas
C, is in saturation
-Y6s2
V:
_2.5.
*a
+0.9 V
.'.
Q2
s.
<
Yr )
chapte 5_l6
: vsc
(b)
+5V
/R = |y!| for PMos to be in saturation.
+lv
vro *
a)R: +/R:0<ly,]
saturation:
1:
.'. both
: V.or:
o| and
V'e
O\
have same ycs
+5-lD veS ves_\D

s _
zl(})slv., l]2
2v
: 5fcs+sVcs
ycs
: +1.v,
(bad roo
/o :0.m
region
if
Mos
< y,)
tl.6_
or
|
Aso,
/R
-1 :1lvJc:2
ysc
yso
vso
: l v
R:10k:IR:10X0.1
saturation
Vse=2=VsD:2_|:|
c)R:30k+R = 30x0.
= 3 V + triode region
100
8x25
1]'?
|rv,o_|v,Dv,"-v,'"]
0.5
.5 =
l)(/sa-3)
|(,'so_
o.5
4o _
,,sc
_ l.5
=ts6.2v56-4:o
: 3.24' _1.2 v x
V'o:3.A_3:o.24
l k=9R : l 0.l
V'o
vsDysc_|y1|
ysD +
transistor operates in saturation
vsD>-vsc-
b)
:
Gs
;[r)
V= +5 (|k)o _ +4'l.
Vz: V_vas: +2.5.
V= V' ycs - ()rD:0.9v
5,58 The
lxxu.s
x ( yro - ly,l'])
Both O, and O, in sat.
(V"nt
1 =
= 10 v
triode
l:8X25
region
\v,"_fl
Chapter 5-17
[{rro
0.5
r){r"o
O.Sfro
ro l(})r- _ rol']
vro
4O+V2
- 81 :0
/ro : l0.l v r/sD: 0.l v
e') Vso : /56 when R = 0
-
2Vro
f)
Vso
= ,/scl2 Forthe
device in
saturaion.
:2(Fol = l00
VSe
), herefore
v"^
tsD - -t- - t t
R=
implies
Vso
1V+R =
b) Both transistors ha,,e D = v6 !d dreEfoe

they are opeating in saturation: ir' = iD
l0 k
3V
v^^
f n safuration:
V'o:2,V'o:o.2
ySG || therefore
= vSD<
the deice
can't be i sauraion and it is in triode region|
loo: 1x8x2s
2
[,n'- ',()_ (ff)'i]

}"^
or:
..ii.
Evlo
= Vto
..
"'o
l-^
-#
o.rvsa
20 /65
2.88, (-1.82
V X)
2.88
= -
2.5(y4
vrR = 2'88 +R : 25.9 k
.2g
o'29 = 2.59
5.59 a' Q2.Q| operd|ng in sat.ation: = i,, = iD
= Vcs2
3: V""1 : V67
Ves = Vor, :
..|vcs
Vl=
,
'
.5
1.5 V
x
2 zo.
)uc.'{<v,_ D
W _
i(3 v_ |
].9
t0
l.s
ll'?
7.5 r
1.58(y4
)2 = (2
_ 1)
\,c"'
_ V)1
'+
: !(2_V)
V = |.39 V= 1-4
l
]9
r':
' 2x u x t0 t.:q
W' ,
c)' --i : jj =
L| 0
7.5
)2
= 4.6 1A
chaer 5_l8
lor :
W.
l0
t0
|ry|
A :
l0 X 562.5
/l
cs
5.625 m
=(:zo
\L)1
s-s^(
,
-'ar
'GS2
.\
Assuming tha the transisors are in saturatian,

and
l'L
since
are he same for bh p2 and Q1
wecanwrie:lr,
W,:
30
l0
L2
|c<
l_ =
"
l00A 5
w2
+0.1
b'
ll2 _
],z]9t.s
2
l'
7.5.,"
5.) Refer o Fig. P5.60.
then 0| is in saturation. y'e
assume that 2 is also in safuraion' then

becase /Dl = ,D, y vould be equal o y..1.
V^^'
!:
2
= V^-^:
z.s
the same dmin curren then
2.5
This is based on the
562'5
: -v,
(
_\L/,
_,.,
=ir,
ioz (
\/'
iDt - l.siD2
l=,,, ir, + ir, : 02mAl
vor,
vor,
i^.
: t20: lx
"(Vor,
=e r/3
r00
,rouo,
1)2+ zor,
20
= -1.35 V
0.2 + 1.35
Vorr:
100 m then:
|12 = 5.625 m
1.35
Vos,:
r' : lxsxz.s_
or
are safuaaed:
o1and oa have l7 :
l.32
20 assume t. 2
V: 5_4oxo.l2:0.2'
V1 :5-40 x0.8:1.8 V
Vl: 5_2.5:2.5
Nowif
( _ 4\ , l.s _
\/|
\L)1
0j & oa are saturated:

ycst= 2 : esl = esl
assumption hd
VcS3
|)
i2r:80
t)'!_ 562.5
l,'2= l'syz.s
Vcs : Vcs, : 2.5 v. since Q1and Qa hae
Vsl: Vesn:
l]201(Ycs
V:5-4o l00: | Vr:\y
_ V"., _ 1- l.sv: v'

2
Since V61 =
i2
,,_l
: (Ves- 1)2 + Vo. :

: _V=+ V : |32
--
W^
W,
-"cL = "C
. Ll
since
yI
--
_ t"r= _ |
2
1.8
+ 1.35
1.55
V>,/6s-
3.15V>
/cs-
This cofirms that both transistors are inde

satuaated and our assumptio \as
coftecl
Chapter 5-19
5.62 P^ft a
Fid the RD corresponding to point B, which is

the safuration_triode boudary with
,'"0,^
Vol
Vps.a = 0.5
Also on the boundary
,,'W
2.5 _
Part
1.25r
Vcs
0.5 516
_
0.8, so the trasistor is in satuation.

.
v., -
n"
|*.l\3!l'=
vo"=v",
*,.*[l#]
:
V-
2.5
l.78Volts
The vo!age gain is
n'|'l("", , - u,l"-., -
v^',.*
)f
^"=
= V oo+ Vos,c + 160O
(.zs
|
L
_ /"""_v)RD
(40)(0.8
I ')+(z.s _
0.5) _
0.5r,.._
The oots of this equation are 0.07720

4.O4778
The curren iD' coresponding to point
uir..l s.r a-,
2l
= '(o.25'
lo
3)
0.sX1600) = -4.8
k"vo R'
_ _loRo
t"ou
(s.37) & (5.38)
&
cIearly he v^ * 0.07720 is the choice becarse

the her one is above y,,
c,
is
1,
is maximized for the highest RD still n the
sauration region
o
_
-.
?I
(V
o Vou\ fol v^:

, "ou
v*
The maximm of this expression is reached as
vo -)
Voo- Vor.
'n.,= ----fiT-
Find V,,
region,
2.5
ue,
1'
V^"= o.5 + V65'9 =vcD'S+ v6B=v + vD.'' =

0.5 + 0.5 = 1.0 volts
Part c
Find yaf,. corresponding to point c, where "l.
= 2.5 volts and the tasistor is in the triode
resistor
:50
o.5)
Part d
mA
1.25
Find vcs coesponding to point B.
iD.,
'
The \alue is close to the equi\alent

but they are not exactly equal.
(0.25rlo 3)()(o.5)'?
R^5
-'
I
Xlo_3)()(2.5
(o.25
.
"7n,
o o : -'-T-
_')
O.O7'120
l6
An equiiant
R^^..,._,^_.-
1.514mA
resistor
cacated at point
Vr".
lue can no\v be
0'07720
= l.5l4
l r
This can be comFred to the \ale

which is realv deried for v,"
os
o.
cs
V,.
The maximum is apa-
enty unbonded, but the aloable signa s\ring

becomes zero as y-proches zem. The cond
tion is no a practically useful one.
= 0.
so.gl
of rD.
Chapter 5-20
5.64
lVrrlmax
* vnn
(2.0
0.61)V,
1.39
V.
dolnward
-2.0)V. = i.l8 V.
= (3.175
uprvard
(d) Large sigal gain
40.61 l.l75 rV
(
l.6r
r.39)v
The large signal gain differs from he

incremental gain by 2.57o. This implies ahat lhe
transfer characteristic is not a staigh line.
5.65
R,,
20 k
k'' = 200 A/2
Vo
' = 4
Vo'
V' = 1.
Ro = 2A
(a) ndpoints of saturation tansfer sgment
Pl.
occurs at Ves
: V' : lViD:
Pt A = (|v' 5.') (vcs, yDJ)
(Ve: V')
Vco = 1.+Ves_ [s _;rnr] =
s+(j)rlz+) [ycJ
_ 1]'z_l:0
- 23vcs+6:0,
yor + 1.605, 0.3 x
L : 0.l83m Vr, = 0.608V
Pl.' : (+ 1.6l., 0.6lv.)
l2ves2
(b)
For Vo,
Ves
,o.
v:
0.l25m Vos :
12
IVolnax: min{(1.6l _ l.5)v',(l.5 _ l.)v.}
yc| =
Vos :
0.6lV.
.5v 0.ll) -
3'175
aRa =
|'v}"no
_ _2_ -'lo
;
:'
V-_ 1
Vov
o.30 '
: Ves V6y: o.4o .

k : kY:1.6'rmA/y2
V,
w
7:
8.r3
roo
(vo/2)
5
(o'2 / 2)
_5v/
,
(c)
l
l
| ax|
_k' V,|,RD:'
VeS: l'6l. Zrr:
knVon Rp
a) From eq. 5.38, and as discussed in the text in

sectio 5.4.4 the maximum gai achievable is:
0.5'
+ 2.00
at
'l0
5.6
(l.50v.2.0v)
g^Ro:
0.7 .
, : _
..
[o, = l.5V
In
l'5 '
v =
Vô
, B. occurs at sat/triode boundary
vo,
:
:
L]qv.
b) From Eq.5.38, tbe gain is maximum when

is minimm (: o.2 v) and when the drop ac.oss
R"
/DRD) is lagest possible, which occurs
when we operde closest to poit B on Fig. 5.28
(:
tB: yDsl : Ves|_V,:

V
to allow
Vo
orl" = 0.2
fr :t0.5
swing
Vor:0.2 +0.5 : 0.7V

-9 14..1
(5 _ 0.7)
o 2t2
4-1
chater 5_2
V'x 43
Vo
.'. RD
: l'5 : all-6
y'43
:
/p
c) f
(d)
0.l25mA
5.68
voo
=r
": i,v\,=:
2Xl
1
32 k
1 A'
nsaturation:
Ra:4V'o:
mv
1 = 166,ra7']3L
W_
10.21'
Voo'6Ra :
-.n
o.1
5'l'Rp=0.7RD:43k
undary
5.67 At sat/triode
votlB
VDSIB
: vDS- io
vor* ot
i,o= max dovnrard arnplitude)
,os|, =
,cs
V' =
o'+
ffi_
gie
v:
fof Q2
iD
forQ1 io
uate
,-* .:,
t:
v^,'
Vos_
VDD
V'u
Voo
}Lr: 1â,u
1.5v.
2.5v.
t6
471
rn
29.4
-14
933
mV
66.6
mV
-12
1390
mV
115
mV
_ 1
1820
mV
182
mv
gle
.
^n_
-2(VDD
fotvDS =
,,,
,,!'= () fv, - v,7'
m,.fv,-
v,7
Voo-V,+V,m
A" =
r"1vo,
\l,"oorx
iI):
^l(,'r)
-J:
5.69 let v65
_kn"oRo
@=^
,n@:
l(w / Lt,
V DS)
l,A: _16:
v;'
_''^]|w/
', v l '
A"
and
_ v. _ v,l-
V. + vt
- V"'r, :
Vo=
= 5.
o.5.
\*"(l),v,_
(|)'r''_r.'
*- ,*-Lo
A
for
Y,
\:,(l),v,'
for = vis
v'
V,z
- l.r6
};ssin,
v,11
+k'1vor-
l,1,o,
1s.l)
D+ k''vovGs +!2k"l/:s sin''Jt
Chapter 5-22
: o*
+!*
l
4 'J
cos2}1)
(d)
v=i;:80
I
second harmonic dist.
.,.ô=lo'':':tu
k,v^,vcs
o5
vov=
l o:
v'
io= l.5l3 m,
+263
.zs m
+o.05V
/or lor:
iD
"*:1
os
Joro' =
: o"u*:
To handle the signal, we require
),"o'u
iD
-g.1r,, ||Rr)
'.:
k"= 1O rnA/
-8.O
: 7.3
Ro :
s'72 |"| = .5 v. pak
Voo: |.8.
lerl : s
> 25-"
5.7O
.,
4v ou
For 2HD <1%, we must have
: -gnRD :
/or : 0.l V-l
(c\ Av
knVnoVg"sint
_0.05
Y. i,
= 1.13n,'a,
_238 A
e^= hs
lio = o-1
= 5.olo
v
50|
8.= k"( )=
,s
0.5v
(l
'eo
D
: 2 o
Yov : 0.343 V and
S')V ou
SolvingA&B
o = 'l7.l A
k,
5.0mS
: l's =
:
C,,'
vDD
'
l,l
g'' l.2' _ v0v> (sok)
2yo discrepacy
5.71
Voo_ /rR, _ 0.5vp9ak
"'
g'B'
50
Ves
2 A
292
/ V2
1.46. ForV,
o."]43
At ' fot
0.4 V,
5.71
Voo
"*+
t-
-c
-+
*,
V,
V65
Ro
o.4
' k' : 4 mA/2
0.65
8 k
0.25
v)
'/""
@)D: :k,v\; = |25 A

Vos: Voo- /rR, : 0.8V.
(b)g-
'o'
V. Vr' = 1.3
t"V,,u
I mS
(s.s7)
t.:'*'
^
û
Av = -E.Ro
2DRD 2(Voo_
- - v* - - v*
Vo)
chapte 5_23
ii,
oo-",:
vou
: .i',
>
The safuratior/triode boundary is
?cs_(v
los:
(Vor+
/o:0.58V.
i,,
oo
V,
so
v^',
- v^" -
i,,)
),l +
;,
Vnu + ), +
2(Voo_ Vo')1
",|' fi;,l
a.
--------------:--
Vo"
: mii :
.3o
it
= 20 mv, m
256 mV.
|'"i'|:
, = l lV2
RD =
25-0'58 v' : t9.2 kf)

l A
k'"
15
12.g
= loo
l'o
: .
For /D
5.74
112!L
2.5.'
vov
Vou
For DD
;"
vo\
Vnu
(w\: 2to :
\L )
k'.t1"
v.,+;,+2vDD+
..rDS - rD
: -2(voo-
'
|Av|i)
(Ves _ V,) _ vDs = _i(l + |r|)
Ds
1,,
cien
25oc2
and
zz.z
5cn2 / vs
/vs 6"'
: p,c- :
n.a
/1
2oA
k'p = |oA/'
v.
This table belong to 5.74
case
lD
ype
(m)
lv,J
lv,l
a(N)
b(N)
CD
1.2
0.'7
c(N)
d(N)
e(N)
N)
-l
c(P)
h()
(P)
j()
t(P)
.5
(P)
ll
@
1.41
Note - he circl entries ae he givens.
gm(ms)
(m)
l)
CD
o.t25
4(n
250
10
2no
o.t
l0
o.2
250
(m/v)
50
@)
6)
0.
0.2
comment
20o
20
20
125
t.25
0.1
.8
l4l
* See
o o
,.w
k'
(m)
.4
chaper 5_24
Use equations
(5.ss
)s.
5.75
g-
t'[v-
FT"
(5.56).:
(5.57 )
5.76 continues here
2o
v^.
Gien o"C.,
250 A
/'
=0.5v'
:0.5m
Fo
g. = l
mA / v'? ad / = 0.25 m
{*c-L -:'
'-:
:
.'. w
4pr|
v''"8-:2-b : o's.
:. vcs : v.' + V, = 1.6.
,,:
,)
: _ nssRD
, : * g.v,R5
5.76
g-,".;|1
*8.Rs
: Rs
|i -L+n" = l+8rRs
rs
'a
v;
-Ro : '8^R
1-"
l+g-R.
c-
s.77
Voo
YsJ
Y,:0.5v.
[e =
50
Given
Vr, =
V6y
v.
Vo,
0.5V., g-
:?b:2,5
Vuv
Chapter 5-25
,." : l =
o
l00 k
Vo = Voo_ Ro = 15y.
and
,:+:4A/2
For
-s-(R"
ID
1 mA'
: Vos:
Ves
g^ :
ou = o-707
.,
l.201
mS, ro
2.83
fal
.,)
ll R.ll
V
lk
l m
g.:.Lrk,:zrl,s
Vu
(f) :
r,,: \D _ lv':
bl
(c)
18.2
Rn
1---
.
50 k and
21.6
5.78 n_channel dvice
v,,
1"Co,
for
0.8
:
:
v.
90 A/2
2o
'L : 2 m,1e : 1
s.: F"%":
vA:8L:
424
|6'
(d)
,,':l:r*ua
vou
2J
j}
t"i8
.l.
'
_o'9
: 3.33 M
R, : o.q'l
Ro
= R,i, * Rr,
9 :
- s-tr6llRolli
j2 :
_.o
U'
p{hannel deice
R1'
-8.2
'
u C : 30uA / V2
for |ry : 20 m'L =
g-: 25 1S
Vo:12L:24V,
5.80
2 m, 1,
10o
A:
r0 = 240 k
Vr:0.82V.
nroR,,.RL
s.j9 v,= 1v-k =Y:2mA/V2

'
(a) dc analysis
vo
- f|
15
z.
= SV'assume
/r:lm
V5:3V.vcs_2v,Vny:l.
D:;k'v;=lm(check)
"' - ,..
:
Rr- r R-
t0
ill-F,
82.6
A.:b_:L
' i' sc
Rslc+R:9696
RL
Chapter 5-26
5,81
isrc
R1)
q R
(al 0.
:
,'
'
900
R'
= R.,r + R,,
^._
since
2k
Ik > o'g{'t
'2k+Ro
l+R
2k7
+ 1kR,)>
o.22 >
Ro
oo
VR
y,, :
----j.E:-]-
R,"+R,;*
:i;
ll R,
R;, * R,;c
),
' G-(R^ |
sbstitution for 4
R, )' so lha
R,,=
c"" _
G-(R^ f)
v,,"= =
Ri"+R.z - o'|l
1.8 t2 + l.8 tR
8 R0
: c,4 (no
yields
25o
R,
cll
' = --jl
R,,i+R- "RR
A
by oltage diision, V,
9^-._
5.83 fR, =
|0.
c.'
then there wil b voltage drop
across the output resistor and he usua ampline

formulation ofthe oltage gain is
12.5
5.82 The equivalent circuit of Fig. 5.44(b) can be

conerted o the uialent of Fig. 5.82 by
source transformation o{the output circuit:
U'
n',
R,"
RiJ'
R.,
U"'3
Thus,
R''
,,= I URin + R" u"*
,,..
n he altemae formulaion \yih R| =
the out-
pu ill be he same as the output olage source

since he resistor has no voltage drop.
Clearly identifying with the equation above,

where i" = onon's currenl sotce
and
&:
wnere
Auov
&, this iS equialent to Fig. P5.82
c. :
U,,
f the output resistoris now allowed to possibly be
non_zero, we can look a he usual formu|ation

again and see that
rt
,,^:
't
" R/ + R,,,oo.
_R^R,"
'''' ;|,^"R;""'''
_" :
fthe outp is shorted

c
- : bl
v
'|RL:
load conneced,
R,"
_ vF]]
'
i":
wih
G^'or
a
signal sorce and
R.
R, *
------!-'
R,,,
..
-"
a'
G:''n
G:RtG
1l R
+ R,,,,'
1^\
ChapLe. 5-27
This figre belongs to 5.84
Ri,
R,; l-+
Ri^ ii
{-> ---->
+
5.M
-<-ii_<-+:l
Fig.P5.84
ii"
= Rr
R.=n,
ll n.
note
1l
R;,
+
Rr ;
R"
oo = 0; =
___--
g-R'L]
'
R/+R
e^'(R' ||
R'l
_ u,R'(l'' 8-R,'
R, tf,
L R,+R J
o| ' R2ll_g.R.|
o""
'n;i'fr',' : -t-r,
^ ''R'L_
;l=
(r- I
\
.R
i.' =
i o
(R
- j1l _ R;(|
s.R/)l
J -)
"' :&1&
l + 8-R
l| R;"
R.
,,,,,,,J,,,,,,,,
R| ll
R, ll R=
i.ll
g,(R,
R,
||
R)
R,+R ll R
.rn]|
outpu resisance assuming R,(
"m'
R_f
Rt * i-f
,._l+s.Ri
R2
Output resistance including Rq
to
R'+R/
I +e_R;
R,ll
Rj:
(R. ll R. )+R"
R:ll
;t*
Evaluate fr
I + E-RL
R! + R'L
Ro
Rl
i = l - | R+ R;_ RL+ 8.R;

R + RL
"' R''. R
R," = R,
Rr *
R::
"
Rt RrL n,-n,
ni : R,
a
.'
.:-+1'-
R+Rl
')
*!
Rt
R, = R, ll R.,,
.l
: 1 m, g. = 1 n-/v
R, = l , R, : 1 k (Rr,* assumed )
R', : 49.8 k
A : l_
Ro: 10OO
is out in half by R/.
Gien R.'* : k' Rr'--r , and
R, : lm
l_ | \
_'u''
G, _ b =
R,
1 k, R,
'
'
"--".'"l
Gy: -4.55(R''-;
(R, : 1 m)
'1'
Gu
':l
'-)
3.o2
Chapter 5-28
5.85
G
5.87
(441;)r.,,ll^,1*,1
-\r_l
SMLL scNL MODEL
RL
15k
=
2R,-:
a\ g^r,,
--
g-
'-2
|n'
an!
jg1
ru -
Vl
-D
2'D.vA 2Vl _ 2'l2.5 _ ,a

V"" n V"'
o.25
b) f G =
-lOV/V'
R. =
k,i, : 2R
15
= 30k.
what is gm?
,c
Ra+
'
(2 m/v)(50 klIl0
Ro
Rc+|MO'
R6+lM
FRG>>l
k|!20 k)
, then
,r.7o
c,
_11.76 otherise' he gain is smalle

=
5.E6 R1
= depends on
,:V^:
'' D
,- :
R,
WtT
t0, :
0'2fiA
F,c"'':
:
:
o u
_'7.5
R'
j_
.t25 mA.
l m -:-:-.ls
o.4
mA/v
5.36 k
and assuming osses due o
2mA
_g,,(r,,||"||Ri)
.Ia:v o".
lmA/V
10k
_1.4ov/v
For a 0.2v peak outu, the inut must be
^
+G='.
so
= _.+!s..l klllo kl
92
l4
0.25V
k)
source impedance are negigible

G
15K): -g.'10
s.88
r.||R, = 50 k||6 k
R;l0 k
, - You
o
'.
c)fRD: R
G. =
biasing
t,. = -c-o. ll ns
: _ 4,56 k ll 6
_2.l4 /
=
_g.(3t|
therefor:
Rsig can be negleced, and
_8.(RD|||1R,)
,--lm
,2 m/V)(5.88 k
Ro
G: :
loV/V :
v very
lage ro
i
i
i
I
Chapter 5-29
This figure belongs to 5.88
i
I
a)
I
Rr,,
l.
G)
_l\^---i
I
**
's\=4'
G, = Gv' Gvz
Gol = _8'. (- ll R")
b)
5.91
oerall
_2 m.
10
: _20Vl
e' : _g^'. (-|| R'|| R1)

_ 2m.lKll I):
.'.r":J=zso
_10V/V
v"
+Gv: (_20)'(_10) : 2v/v
5.89 G, : 1) : _g.GD||RL1| lo)
lf RD l| R/ = =+ G _ 8.ro
since
o :2o -16r^ =\
v
" "
2'
ZVo
Voo o
9.
+
grRs
'
^R'
+
8Rs
_8R',.
"' 8m
for U
:
:
_s
_3
1
= lms
_ l0, let RJ
=L:z
8^
5.93R,,=!=25o
* c."%
:tmS
...n.:a:
g^
5.92Rs=lk
Voo
5.) g. = 5.5
.c- gfras:
:
g.:4ms
8. __8
I + g.Rs -16
co
: lg
g^ =
l7, *
for
Rl,,s^J.D|]
a:
n,) = +:.:
R",r,g.
must
decrcase to |l2, a'd D must decfease to 1/4
Chapter 5-30
*"
: 200, o,, :
R,,,
c'u:
4O0 +
G,:
5.94
.. o'":
;:
---
0.0q]v.
*5.96
10
8
600,
*=
g. =
l.67ms
02m^
:2"+.' :
c^
o>7o 1'
.'.
V"''
ffi^n:
R,,
Ri,
lo -
= l
o'24.
5.95
noe
tK<RL<3K
R, no.
for RL
,,
2K
2K
2K2 + lKRout
4
Rou
for
+ Rot
.6K2 + 1.6KRout
R.
7,8
3K .<
2.4
Rou 2K
i.,l
= 2 k
Therefore Rr,.in is
G|
= 69x
g.'
;'i'''_ -
k" = |6rn A l 7
ro
98
'|i,: s0 2
:. RL : Run: (j
nol :
',
I
_r
5O0
J"o = csl
the ruling case and
r"
:*,"
Ro
667
r,1l nl)
c-
(,
1f1ir=".)E*ft;
: l(1
0,i
,,
R)|
'"'___L-*Jl,'
667f,)
Rl
are in parallel
i1r,ll n.y
'li.
0.6Rou
3K +
and
trr: i*
min
R.,;n -l-j4g=
R,.,n + Rou,
R" no. + Rou,
lK
,,,,
= "
_+f,,
8n
,.) =
- or =
,o"
chapter 5_3
."v
*ffi:g:1.96ms
r.:25k{
5V_
somv
For low distortion, kep
'.
-----:!!
: s.s
ffin|
o.zv.o+ V"o
g-v _.
,sig
=9
let
Rcl :
18
analysis
I
0.875 m
rrrs+r.:550mVpk
0.375 m
Voo
250
5.98
.1
1l
Voo=9
---ll-+,
l}
'+9
_ 24'70 , +
_ (3K}/D|r
',
15.({'
implies
/o"
<
6.o4'
-|.o9.
,/D is 2.09
5.99 want 1D
from triode mode boundary
= lm{, rD
midway beween
triode and cutoff
:t5vsuppies=lv:0
k, = 2r,A/ 1
RD
vc
'2
DD
(bad root of l.76 m
o.625
' )|a.95( _
/D = (.985)mA
Yo
m _
15.60 _ 23'70
0:9I
0.625
o.625 m + 25o
:l2n^
,.:
DDD
o.25.
'apeak_xr:250pk
io'.^' :
io'^'^ :
22d',RD=RJ:3k
g-,,R1+ 8.=
|"r,| <
22 ll + RG
17.6
l,,l = o.sv
R' : 2k
22
9V
5.97 Source Follower

lus,l =
3v+lv +v :5v
+5V
lmA
+
I
;*
Rs
-5V.
+9V
o
Ve=5V
Rez
(4'95/)
22
V
lZ,:
lmA.
1,
i' : ,-,"
..2
)k"V'o=
V.J
= l
vcs:5_DRs:2'
Rs
3.0k
VeD: +lV +VD: _|.

cutoff: /r:
+5V
let VD : + 2V (midway point)
.'. Re : 3.9111
triode:-
Chapter 5-32
D5.1
5.101
*t'u
^
f.'n* f.'
*",
L-
2''z7
:
-J
*,
}i=ol
Vc = 4'
l"
gten
k":
0.2
- o.3rn|l
rr.,^
}1o.u
for /p' .u*
o.5m
t3.39 l
Rs
0.5m
_ l.5f
solve
6.36.a
0.36m
l.076m
t
1
(0.5m)Rr]'?
:
/r.."* :
o=
}1o.:11:.:o
g.86D +
l.lD^''2
4.',72
0.505mA, (9.35m bad
}{.z)t:.:o
l.1 11
(1.6q incrase)
5.t02
= 1. k
lr-,, :
roo)
r.s 1.l/D.-]2
: ; '|1.7oD+2.95
1r'.'" : 0.258m, (ll.am bad root)
oe ha| [or Rs = 0. /D has a 2.4: l range.
For iJ : l.lK,,l, hasa2.0:1 range.
o
1o
determine Rs
Rr:
DRSf2
0 = 2.25 -3.'l6'1D+ L
l.]mzv'zl,<
l.129K (tet
ih Rs
r,-,"
11:.:9
_ V,_
\'tro
k" = 2mA/
soleo:9_ l2D+4fD_ D
/, : l.m
For . : 3nA/ L? (5070 increase)
: 1.0- 1.5v.
: + ].]9V
v-: +'25.6 2'2
+ 2.2
"
\rih Rs : 0, o, : 3.39V.
t.o1'? :
lr."- :
}1.:11:.:9
V': lV,
gien ,o
R,
k,
2rn/2
given
: 2v
.'.
/D
5V
= lm
uo : r!"
= lv. and
\ ,
v, : (5 _ 2)'_ l : 2'
let = 1'5'
'n"n
o =
l.5 ' 2 D]2
/o
\1z11s
l.2Om, 2.55mA
V, = 2.4o l/o'
: 2', V.o:
l'1o.
Chapter 5-33
D5.103
b) |',
+5V
2, k:P
1 '25nA /
: |x .zs1vo^ + z1'+
Ves : _3.26 or _ 0.74v
the second answer is not acceptable
I
,'o,l <
-5V
V,
i. =
|.' k"
1
r;
2mA/ 2
R,
c. _ 7 _
R,
4.'74
k, R,
3 k
R, : +R.:0.2M
|=
lg.ol
negecing gate signal,
: -l
+R2
(5 _ RDD'|i.b: v,
6+RD(lm)+|;j+|
_2.26
Ve=2
t^:!/ +v = tv
,0, ! t,: 5 - loRs
R, : 3.0 kf)
: |i_
"oo
_3'26
VS:3+2.26:5.26
1, = lmA
at triode bo'dary
riode boundary
lrrl
Vos: _3.26+2_|:
Vcs
,", :
Rr = 0.8 M
=l.
s.roso * =
!'w
2L
Voo
5 k
2ms. includin8gaesigna|
j*l,,
f^"
.:,
" g-Rn
ir.", : 4898
y.$
D5.104 For pchannel MosEET to be v from

the edge of saturatiotr:.
since ,/D
: 3v
VDS: Ves V,- l.
and ID
: l
J!]L _ t .
_J
= ] k^R,+n."|'l0A
R^
^|
:
ll:
l I l/. k'
m'
lo =
i'tro,
1,
1r*
RSD- y)2
a]o
RsrD
_ V,|_Rs\*
: b-zn-Fa.J
aK
u!1
Mf)
2(,/ss
V. = 6- Vc- 3 R" _ l0_6 _
0.3
V,)'
K(0 + vss_ RsD_ v)2
0-5m / V2
r2
l"=
-2 O.5x:/lvc.+l)
9vcs:_3
Vos: 3+l-l:-3V
Rr :3=
Rr+R2 l0
R' : 0.7 M, R, :
4 k}
, o=
's"
"
n,) =
ak
b-
x a l + 2JD RS
b) r( : lO0 / V2, 4 : ,t to z,,
Chapter 5-34
V,: l 'o:1
/s
: -15 v'
Vo = Voo _ IDRD: +.5 v.
:'q.
D
Vo'
,o=o/o:-:
10
< ak
case (b)
.r
Vo,
X
lX l0 1is
A/v,
l :
l0o (Vcs
o.8 '
k.:
|.25 n/2
o.566 .
= 1.37 v
Zo : +0.5 V.
Zos : i.87 V.
Vs
Nov find Vn and V55 when / = 1 A and
( : l
+2.0 '
l ),
+Vo':2
Also V,. : Y.. - 7j
2:V',_l0o106X45l0r
=)VSJ : 6.5 V
c.For.:5v
5.'''07 VD
Ve
Vs Refer o Fig. 5.54
to operae in saturation:
Vosz
Vcs
.+ VDc> _v!
Voe=o
-v^^+v-^
"
--------]--|6
10
X 1
l*
2ôo
]o k
lo1
loo X 1o "
R.
0.14
-l(
!rc%.^+
!1.4%
4'|o_/D = ! xo.s{y^_
lo2
+vD:2.7
|a : 2.1
5.106
V=2.5.
!xI.zs l/^
b'|l0'VD:
"
r0
2
+YD:3.05V
Vc
3'05 V
5,108D
case (a)
/,
l)2
= 1 k'": l.6 m/V2
O.2 m
lo
V.' =
1.5
)^v2
''=
v., = .5v
: l, k":
o : 0'2 mA
V,
o.6 mA/V2
2l2
chaptr 5*35
: ':
c,: _u'ft,(r,||
.8t? v-
_ X2(5oKll lo Kll
l + .5
: |.82 '
Ves: Vos:5_oRo
Vo'
Ro =
15.9
(make
,R, =
Go: 'l1'2
16 k )
aal,yze
1\
R,
" : |*,s _ (16 )D _ V2

0 : 0.0625 - 0.5l3D+ r'D
o : o.|99 m, 0.314 m X
Vo : + 'l'82 .
5.111
5-1)
b) if
||
R,,)
2 K)
a)
Ao =
oo-
v o)
Vov -
z(v
yoyis haled (yov
bv4_i_e./^
0'5
4
-2(10 -
= 0.5) hen ID
2's)
is divided
.t25 m
Since yD is kept unchanged at 2.5 V then:
R^
10
_ 2.5
o'25
:
.'.'D
uo
= 60 k.
0.s m
: \=,
;r
sIt
l
T
.,1
y, = .k" = 6.25 mA/v2

want ID
c)
2 mA
,/Ds o acommodate
Vov
6 :
: l=
/o,
0'8
'
R"*
= 2.8
: 5-2} = 1.l k
2mA
Ycs_ 1.8: Rot
Vo' 2.8 Ret Rez
|et RG2 : 22 d
then Ro, : 12 M
R :
'
,Ro
10 M,
50
t, Ro =
10
R"'. = 0.5 M and
From uation 5.1 ,e have:
into acoun
s(loll
R):
0.5
(without ro)
'o.s(o*ll k)
-273V / V
: Rrll .,
54.5
= t ll
4.7
60 =
R.lll R.L
l./ R.nsgLo
+R 'oR' +R
x27 lx--1L
=4'7 4'7
+ o'!,
5 + 54.5
G:5.17/
n
5.110 For this common sorce amplifier we ha:
ra
ro
d)R. : R^ :
'
no
g- : 2Â,
lf we ake
Aoo:
2 e
1.8 V.
vDS> Vov +
.'.
:ar:
D o =4xrol
= 15x2: -30V /V
i, :
20
54.5
chaper 5_36
This ligure belongs to 5.112
+5V
e) As e can see by reducing yov to
halfoiis
alue o.equialently multiplying drain current by
^ ;,.r
+ vco = *+t
V"a
4, vo is almost doubled. \,/hile Roo is muttiplied
bv 4.
As a result G,,which is proportional to boh
1o -6 lR",,,
(c,
v/as -7
is onlv shihtl reduced.
vr' before and i is 5.8 v/v now)
Vc :
Vou
2 V.+ 1. yc{ :
= _o.5 < ,/
.'. Saturation
b)Rl" = 2 K|| 3 K
i'"
Gr= b
12
g,,
a., - 12 K_Ri"
(s || rr|| s )
u:
Gv: -41
c1 ,,,, : ir,rj
:1::
!=
xg
I + g.R,
lv.
o.3
o :2o:
Rr
mA: \"r"'r+,: 1l.1

Vo: 5 (5 K)(0.5 m) : + 2.5'
,^:
,i'.u* : lo l lnvn
max : -:4t
d) Add
0'5
Voo
0.'| '
'max = 1.07 V,,' ,,,- -r* : i"n* = l 12 .u

8.t2
^
5.112
a) with /D = 0.5
zl .
U'i.
V': o.' .
yn:50v.
vl
9.R
I+
g-i"
n" +
+06_
i,,, max
:r|
0.5
+.
.7 v.
= 0.96 v.
*D5.113
+
2.5V.
].3_]mS
sinl
g,,(5||5K|llK)
0.5
s.l2
2.5V.
Chapter 5-37
0.7v, V"'+ '

a) for 1, : 0.3 m, |/ru| :
/56 : 1.0 .
= 0
V,o
VS
2'5
s.115
+5V
v.
0.3
'ye
= |.o .
DRS
Rs = 5.0 k
.'.
---rH
g-:2+:2|5
b1
G=:L=-gnRD:_|o
'''
i, :
c)
sd
5611-'
+ VGD- Vp
-l;|" -"|0l +lv
^t
o.7
-7
J"a* : o-155v
p
l
d) for i,,;, : 50 mv, changd
i,.,-=
"'"
for
g1l
#+
RD
(2.5 DR)>
_o.'
l c'o
RD < 7.88 kf,
+ 2.5
DRD>
_o'7
(i1* =
Gv= -gtRD =
sO
if
-15.8
0l
is biased the sam e s Q2' the
io:.:20X5mV
= 100 : 0.1 ml
o : io X 50o : 0.5 V
vo
12: 9: |:
: irRr+l :
R,, = l0 k
= l.5V.
is:
V' *
I/o
35ko
+
lv. :
R :
50k
61 n_
= 1b = 6.4.5
(ro ||
r,r :
n orde to have
/o,
n.5y.
v.
vn,
^ _M_Mg-'
M
"l n: i" =
2ornA /
,^:V-!:a
" tD
mv)
5.t14Rn=I=s6f)
g2
o.o5!
p,:
vo,
fo Vo
2 mS, /D = 0.3 mA
gaRr|r-,i,,,.
-5V
V,: l.
= o.8ml/v'?
Vl : 40. 1, : o.lm
a)Ro : 10 MO
z, < l.55Vrp
_|u -
0.l Ro
d)
=
g.2
R,
| 40K) :
_ 7.7
Chapter 5-38
trz
*5.117
g.(R,ll r.) :0.s,1
'-c;m
R,,,':
R,
R'"
-l-)
ll .,
R.,g l ,
U.le_{ir\-o_
,l
232 k{t
*"*
e)
5.118
y.=
t.0Y
V l/2
r= 0.5
2r
0'6
<yJ'<4v.
V
V.+
r1]'+ l*_ 6,1
for0<y,s<4v,
soY<<l.68V
a,n."
,,
i,,"Llll
r,,.
ll
, _ f4
,/ c.,,
| <v<3.74'
2 =0'75'
:ro
V= .'7.
t.t;
V,
-/
_
5(5Kl|2K)
1.l
lf we connect both stages togeher' then: for the

R,
: ".r*
R-,
here RL is fact Rin of the second stage.
Therefore:,4
- lx
Fr he secnd sae:
oeralgain
:A
'1t
+ v* _
1[t'
- channel
rl
tor
= o.7 (0.5V|/'?)t "/6:sv +:w_,]v]
f.- = l=l=o.:
firs sage: ,{
V,"+
V= _|'24'
b) Fig. P5.l l6b is a common - gate confiration:
R"",:-l:::0.2k
c)
becomes
%=Y*-3
= .5 v l/2
5.116 a) Fig. P5.l16a is a source Follower:
g.(RD||R)
an increa.e o[ 4x in ,
5.119 {hannel
:0.456V.
b:
makes C.,,4x lowe and
n,]s-n,
= (45.6 k)i"'"
, >!+'
vh <v< v,+ 0.685.
0'2 _ o.5/v
o2 ) o'2
_ 1'|/
:7.1 Xo.5:3.55v/v
5.120 2l
x:"-!!:
c
0.6
v,
rV, :
rV ss
0.5 Vl/2, and
z^[a, +
eq. (5.1 12)
sbstituting alues,
.5 v l/2
2"t'6+4
0.117
Using eq (5.57)
'-= #,:'8jr'
:,9.b: Xgtu :
: 0.468 m./V
:4A/
(0.117)(4
mA/V)
chapte 5_39
: '"(fv_V')v
5'121 The es for region of operation for
a depletion mode MOSFET is the same as for a enhancemen mode MosFET. Th hresho|d o|tage is
negatie; hoever.
, = _3 Vo|ts, v.,= 0, r,= 0
: (l\f _,',] 'f1
A;-= 0
UD = 0. l volts U^, = 0. 1 and ,""* l, = 3 Ar, ,l, so transistor is in the riode region
b) r. = 1 vo|ts P,r= 1 2d v.;z,= 3 p,,q 7o-7,,
: oi("l _'n'u'
a)
so transisor is in the riode fegion.
,6-q= 3 P,=
c) ,D = 3 volts -&, = 3 and
'as
'
so transistor is at triode-saturstion boundary.
R&= 5l
d) ,b=5vo|ts
nd vo1_, = 3
p16,11-_
11
so transisor is in the sauration region.
5.t22
V':
_2
O.02V
'
,w
Note that vhen ,'< 0,
When V = Vcs < V ND assuming the
T,
.!;;-,
n- Channel depletion
: o' v'1'=2
For o' : |,
6j = (63_ Uos) = -l >v, -'. riode
o : k'|@cs_V,)or_},}r] : : ,l
For vo,
Foro':2,
oo : _2 : V,
+ 2vr.)
iD :
Jl|
;k''"
3v
io : 424 A
ForuDs =
For
i2
.'. saturatio
= 416 A
lr, : l0 V
: 480 A
: Vos: ,/ is ngative so
VorVor_ (ahPay
Vcs
"
From
TABLE 5.l, this
'"(L)tv
",
'
(y,s, is therefoe positie)
Since Vor,= v<

so
5.123
Vo{ = 0>V' Yo'" =
15is is saturation ,egion
(see Table 5.1)
Doubling lV doubles the curents,

Doubling & l does not chang the crrents.
First, hen y= ycs >
iD is gative.
device can operate symmerica]ly with D acting as

he source and sacing as thedrain, the circuit can
be model as belol. n his conngration
2(ff l2
kn:
1 =
is
trie region
_ v,)v DS _
4s1
: _iD:
:
_'"(ftv"'_v,1'
_\,'"({)o _ v,f
o''(9,'"
v, = _2 ,
,'(l
= z
^4
Chapter 5-40
: 'i,([') zv, VzV

: 'l(m / 'z)1f + t v1
U,
(l?I +
!,_ o _
""
R)ii
_\tz
/ '){_z \'
R,,
lf
\i,/e
RL)
ll R.)
_
r1
600 k
KcL
for node G:
'
rie kcl at he outp nde:
RL
=
Also ne ha gs
substitte
,,
R2
_gJ R+R2_l
R| +Rr_.
By subsiuion fo vgs in
Q
R, ,, + 9.R, ,,
!,- "
-o" +u"
Rl I R] -o''R| l R2'| R | R'" RL r
'}
l)
,,(l_g.R
"'\ R| + Rr,/ =,,(l'g.R
'" Rl I R., +]t
r" Rr)
lu _
|-g.Rz
' ;;;;E
,"1L
|mA/
Rl= 0.5M'
i:10k
v,'
' r. :
R? : l
l00 k,
l5oo
v/v
ll
Rr)
''
i-
-R|
'
,9^l v7vr"
g,i+t*l*1
Rl +R2 tu
n(
.''l)
R,
l*
-!_i
lX5+l'
|
5 + ln
l '
oi
=
il= * R:
to i)
l
10
2.27
l:
i1
* 1" (ole|ha (R| l Rr)

R
i.:,ll
' "\ Rr + R2*ll
R,l
R' : 1,
i
= (R1+ R)i,+ (i, _g..,",Xr,
l.5
c-+lfo
Nolp e find R.=
lo|| l
r" : i_ Ri
1
'
'
r+rxs(n+
To calculae
u'
'"(;+f .*.+)-
1_lXl0
n-:r_
4o 1u :
ro ro R,
^=
R,
R,
n, *
forus. in (1)
R' - R,
: i+ *,*,
*
*!-!+!:
+nn
" _g' r" R
R,
lso: g.:
a
'*--": '""",*t
g. :
ue,'o'
(|)
10K
Ri,
g^Ri)?.||
'
b) tf we wrie a
1|A a),'" :
g",i +
+R2+(t+g.R/)(r,,
- r,;l
Rr
= '\{"(!)v! v=v,
Gi
i, "1 l
l\
,\R, + R, R')
isparallel
Chapter 5-41
* |j
"r
,,\Rr R, R,)
v:
ii:
,: Rri* o
(';}# . *.
"'=
g":
(,rj i)
|)
I'
I 5 +I l*l)lo)
' '' E.zs+fi

:
fi
Substitute i in
r.=
2^
-
'=
''v !"=
V^:
'""
-,\nl
{"=
v.
g.rR"o + !2.R,
'o
yDD
V6
= o.2 + 0.6 =
50K
yDs +
R2)L, = (1
Rl
+ D)
0.5)
X 10
Voo=3.416
0.8V
(0.l6
= 0.01
= 0.8
(R,
+&) x
#:
:V D
_
2Q:
0.0lrL
R, = 80 k
=2V +& = l20kO
Rl x 0.0l
0.01
==a
= 0.1m/V
lOm/V
2o :2ok:2M
0.01
1_10X120X0.1
2000
80 lx zo+!4
20
]29 +
we can wit:
0.l)
Vl : V"+
R1',,
,'i
+
= t = i! ftr:
,_ -+ ,i, _v,_
tt
Va1= Y65 = o.8V = Rt /1,
/il
#s:
: - 198.8v/v
1.6*4
5,126
xr2
g.rR"g^trot
v.
v
x t.6=2.4V
= 2.4 +
= Rr,,rr, = _9& =
=
c', :2J2v-=
5mA/V2
n order to find lhe required value for yD:
2+g.rRr+R2
'*
= 0'2
-! + V"= x 0.= lov
G1
1:
= Rr/ R.o + 8.2R28^|ro|i +
cuits ae basically the same.
Vp5 =
- o
we calculat the paameters:
5.125 For Dc_bias analysis puposes, boh cir_
Vo,
8ng5ltol
^f.l
.Ri: 4.37 k
Vn = V65_V,
l
^
,.
ui),(,.. *)
R--rlX500+.,
' \500 l l0o0 0ll)/(l+
l0., '
ro=
f_'' :
l20k :
I + t98 8
R,
-bi
o.6 k
". : RI='''=!":
* Ri, v; J4-'_r.l
Usig
8 + 0.6'
= - 148V/V
This two stage amplifier consisting ofa CS stage

followed by a sorce follover stage \ith a relaiveIy high gain
-j
'.
acts simi|af o an oampi an
inening confguration. lso note tha
r ----l:1<1
-Ru,ig il
---l1
n o.de to increase the gain
maide ro +
1)
we need to reduce the effectie source resistance

R1. To do so, the foowing conngufation can be
used:
chater 5-42
To calculae Rs:
ni= n, || n"
5.21
1I=
Rl
---4^-------r
=(
,,I
_^_''_|
&c,
-'.is
5
R,n
x (_r9s.8)+R,
Rr + 0.6
R',:
"' lm= lr,r(4)

2 l0 \,
:
=(
\ L t)
R +R,"-,
= ,0'6
)J.fk=
s|li. =33 kc,
= z.s
/^,=
lo = D_!2x(f),o._o.l'
23'3
zso
/)
,.
o.ol'

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Chapter

cAPtER 5 PRoBEM soLUToNs

Two conditions ned met fot Uov and rD's

f condition l is me cndition 2 will be met

satisfy this requiremet. For condition l, we

Condition 2 no can be used o nnd G.2

yo. smal, compared to

C", is doubled. f W and a are also halved, r^

by using the smallest feture size.

(a) lv6rt :0.5 V.

5.9 5 5a1 = V"'

*l = l A'/2 o< Ucs<5 v.

for eqal drain currents

" _ lx o'l x l 6 loy

fo the same performance of a p-channel

(a) triode region:

(d) saurain region: y",

5.16 sat mode,

'- I0_ Vsz_l

Now for a deice \ith twice the \idth:

for ycs = 3.5

For pmos, change

5.21 n riode region:

_(2 v')o.| _ o.o1 /2

if we replace V65 by V and

5.23 Eq. 4.15:

ill ensure ohmic mode

is halved, r is also haled:

so ifboth Wand L are halved,

says unchanged and so dos

S.24 According to eq. 4.17 |

tio region. since %D is zero in Fig. P5.24, then

so if /is haed. r is doubled:

o show he deice is in he sauraion region.

?o. = ' hus r,,, =0.4volts a the boundary.

5.27 '5: vD-v'

+2,5 + t.5 + l- ride-

.5 +0.5 +.5 sa.

l l.2 l.4 l.6

1.0 According to Table 5.1,

inV' (l%) podces

L = 3 n'. V, : 50x3 : l50V

by' a factor of 2. lo has

doubled. n order to double ro,

process dependen lso. =

rchiee desired r" (which iS 4 tires larger) we

doubled and this can be done by doubling the

stay unchang. Therefore:

Noe that quadrupling v and a had no effect,

Fof y,{ > y^.in

0-? YD = -5v < -.1.5

_ 1v' > _3.5v

- 298 V --r 298 = o X L

the difference i drain currents

To calculate v consider the

For ay value of between 0 and v-'. the

This table blongs

5.40 pmos V.=

5.43 case a, assume, sat, ratio gien l, values

same procedute except

,v= 5'v= 4'

onmic fr,[t+ _ v,'", _

(afer faiiing assumption that both cases arc sat.)

/ : 0.l mA sat' mode :