EOC Task 1

1. Categories of silicon and germanium as semiconductor devices which is;

Can allow or suppress electrical current flow
Have 4 Electron valance
Group 14 from periodic table
Act as conductor and isolator
2. The atomic structure of germanium;

2:8:18:4

3.

2
2
2
2

x
x
x
x

1^2 = 2 (2)
2^2 = 8 (10)
3^2 = 18 (28)
4^2 = 32 (4)
32-28= 4

A covalent bond, also called a molecular bond, is a chemical bond that

involves the sharing of electron pairs between atoms. These electron pairs
are known as shared pairs or bonding pairs, and the stable balance of
attractive and repulsive forces between atoms, when they share electrons, is
known as covalent bonding.[1][better source needed] For many molecules,

the sharing of electrons allows each atom to attain the equivalent of a full
outer shell, corresponding to a stable electronic configuration.
There are four method to allow electron freed by covalent bond which is:
-Heat
-Potential Difference
-Temperature rise
-Doping Process
4.

Adding impurities to the intrinsic semiconductor we can change the

conductivity of
the material ,this is called doping.

N-type doping
-N-type : pentavalent (atom with 5 valence electrons) impurity atoms
are added
-[Sb(Antimony)+Si].Arsenic phosphorus
-Negative charges (electrons) are generated
-N-type has lots of free electrons

P-type doping
-P-type : trivalent (atom with 3 valence electrons) impurity atoms are
added
-[B(bond)+ Si] . Gallium, Indium
-Positive charges (holes) are generated
-P-type has lots of holes

5.
a) Forward Biased P-N Junction:
-Positive source connected to P-type and Negative source connected to Ntype
-Then ,depletion region become thinner as the holes P-Type region and the
electrons in the Ntype region are pushed toward the junction.
-With increasing forward-bias voltage the depletion zone eventually becomes
thin enough and

reducing electrical resistance.

-As a result a current can pass through.

b) Reversed Biased P-N Junction

-Positive source connected to N-type and Negative source connected to Ptype.
-The holes in P-type materials are pulled away from the junction,and the
electrons in the Ntype region will also be pulled away from the junction causing the width
of the depletion
zone to increase.
-Resistance becomes higher and a current cannot pass through.
-The increase in resistance of the P-N Junction results in yhe junction
behaving as an insulator

6. Different between Intrinsic and Extrinsic;

INTRINSIC
-Material is chemically very pure

EXTRINSIC
-An improved intrinsic semiconductor

(pure semiconductor)
-Possesses poor conductivity

with a small amount of impurities added

by a process known as doping
-Alters the electrical properties of the
semiconductors and improves its
conductivity

7.
Factors that will effect high reverse bias in P-N junction if raised too
high;
If the combined p-n supplied with a very high reverse voltage, it will
disturb the stability of
covalent bond.
Electrons will attracted to positive potential and become free as a current
carrier
When the electric fields increases (with voltage),more and more electrons
are freed from its
covalent bonds
These will result a high value reverse current flow (breakdown occur)
The voltage where the breakdown occurs is called breakdown voltage.
The p-n junction will burn