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Kalpesh Raval
Outline
Diode basics
History of Tunnel diode
RTD Characteristics & Operation
Tunneling Requirements
Various Heterostructures
Fabrication Technique
Challenges
Application & Integration
Conclusion
Diode Basics
Why RTD?
Lower sub-threshold swing can allow for lower
operating voltages to be used
Negative differential resistance (NDR) properties
can be exploited to create simpler designs for bistable circuits, differential comparators, oscillators,
etc.
Leads to chips that consume less power (few mAmps
to a few tenths of a volt)
A tunnel diode (Esaki diode) can operate at (.3 300 GHz) & terahertz
(x10^12 Hz ) at room temperature by using quantum mechanical effects.
Large NDR region allows new types of circuit to be designed based on different
principles than those of conventional circuits.
Operation
Heavily doped P-N junction results in extremely
narrow depletion zone (one-millionth of an inch).
1000 impurity atoms for ten-million semiconductor
atoms vs. 1 impurity atom used in a normal diode.
Leads to overlap of conduction and valence bands.
Operation
Tunnel Diode
Resonant Tunneling
Tunneling
Tunneling Requirements
Heterostructures
Type I The lowest conduction-band states occur in the same part of the
structure as the highest valence-band states. (GaAs/AlxGa1-xAs, is type I)
Broken-gap lineup The bottom of the conduction band on one side drops
below the top of the valence band on the other. (InAs/GaSb gap of
150meV)
The most important aspect of MBE is the slow deposition rate, typically
less than 1000 nm (1 micron) per hour, which allows the films to grow
epitaxially.
RTD Challenges
Since the peak current through an RTD depends exponentially on the barrier
thickness, it is difficult to get device operation unless the gate also controls the
peak current.
Integration of a transistor with a pair of RTDs introduces delays to the fast bistable
switching times so, the operational speed of the integrated device can be slower
than the intrinsic speeds of the RTDs themselves.
The precise control of the layer thickness and properties of RTDs may require use
of commercial molecular beam epitaxy to achieve the required control.
A limited ION/IOFF ratio of 10 compare to the ratio of 105 required by CMOS digital
circuit designers.
Reasonably high performance III-V RTDs have been realized. But such devices
have not entered mainstream applications yet because the processing of III-V
materials is incompatible with Si CMOS technology.
Current research activity involving RTDs has been in the area of integration on the
silicon platform.
High speed LSI and low power consumption can be constructed in Siintegrated circuits.
Solution
Use CaxCd1-xF2 alloy for the overall structure and Cd-rich based alloy
separation layers to protect the RTD active region.
Solution
The alloy Ca0.5Cd0.5F2 showed the lower barrier height instead of CaF2 and
high PVCR.
Similarly, RTDs using the Cd-rich alloy for the well exhibited even larger
peak to valley current ratio at room temperature b/c of good crystallinity.
Result
Ca0.5Cd0.5F2
Ca0.1Cd0.9F2
Applications
Integration of RTDs
Devices
Conclusion
Tunnel diodes are expected to add another
node in the road
Three-terminal tunnel devices could add
several nodes at the end of CMOS-scaling
Challenges are more practical than theoretical
Uniformity of the tunneling barrier needs to
be improved
References
http://en.wikipedia.org/wiki/Resonant_tunnelling_diode
http://www.imec.be/esscirc/essderc-esscirc-2003/papers/all/182.pdf