Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
3, July 2013
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University
21 YamadaOka, Suita, Osaka 5650871, Japan
*2
hayash2b@ntt-f.co.jp, *2y_hayashi@eei.eng.osaka-u.ac.jp
*1
Abstract
An approach for the high power density rectifier has been
investigated to realize future highly efficient DC power
distribution. The combination of ISOP (Input Series and
Output Parallel)IPOS (Input Parallel and Output Series)
isolated DCDC converter for the DC transformer and the
threephase ACDC PWM converter using novel power
devices as SiC (Silicon Carbide) transistor for the output
voltage regulation has been applied. A prototype of 384 V
12 V 2.4 kW isolated DCDC converter has been fabricated
and the efficiency of 98% has been verified experimentally.
The breadboard of AC 200 VDC 384 V 2.4 kW converter has
been also fabricated. The efficiency of 97% has been
measured in the experiment and the potential to achieve 98%
has been shown through the design consideration. The
proposed methodology can be utilized for several levels of
DC distribution (i.e. 12 V, 48 V, 384 V) keeping the power
density and the conversion efficiency of the rectifier and
contributes to the realization of highly efficient DC power
distribution and future low carbonated society.
Keywords
Rectifier; ACDC Converter; DCDC Converte; Input Series and
Output Parallel; Input Parallel and Output Series; Silicon Carbide
Introduction
The amount of network traffic in the data centers and
the telecommunications buildings has recently been
rapidly increasing due to the widespread use of
information and communication technology (ICT)
equipment. Energy saving in these buildings and data
centers will contribute to solving some of our global
environmental problems. Therefore, having a highly
efficient and spacesaving power supply system has
become indispensable.
Since 2008, the NTT (Nippon Telegraph and
Telephone) Group has been developing 380 V DC
distribution system that goes beyond the conventional
48 V DC distribution system. Figure 1 shows the
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51
and the fan for the forced air cooling are not taken into
account.
52
Output Power
Input Voltage
Output Voltage
Efficiency
Modular Converter
2400 W
384 V
12 V
98%
(from 60% to 100% load)
IB048E120T40N100
(VICOR: 48V12V, 98%)
Circuit Configuration
Output Power POUT
Input Voltage VIN
Output Voltage VOUT
Switching Frequency fsw
Main Switch
FreeWheeling Diode
Input Inductor
Output Capacitor
Digital Controller
Eq. (4), VTH and RON are the threshold voltage and the
onresistance of the power device, respectively. IM, ma,
and are the peak current through the device, the
amplitude modulation factor and the power factor,
respectively.
PJFET
= PCOND + PSW
= PCOND + fSW ESW
(3)
1 m
(4)
2 1 2m a
+ R ON I M
cos
4 3
(1)
POUT
VCONV
(2)
54
(5)
E oss + E diode + E Ls + E Cs
PL =
PCu + PCORE =
PCu + ECORE
f SW
(7)
HO =
B
=
(8)
Ni L
le
1
=
v dt
Se
NSe L
Vcore
= Se le
(9)
(10)
Concerter Circuit
SixSwitch Full Bridge
ACDC Converter
Output Power POUT
2400 W
Input Voltage VIN
AC 200 V
Output Voltage VOUT
DC 384 V
Power Devices
Main Switch
SiCJFET(1200 V, 63 m)
FreeWheeling Diode
SiCSBD(1200 V, 5 A)
Switching Frequency fsw
50 kHz to 200 kHz
Current Density J
50 A/cm2 to 400 A/cm2
Gate resistance Rg
0 to 10
Parasitic Inductance Ls
0 nH to 50 nH
Parasitic Capacitance Cs
0 pF to 100 pF
Input Inductor
Permeability r
64
Bias magnetic field HO
5000 A/m
Magnetic flux Density B
0.2 T (Maximum)
Circuit Topology
55
56
Data
Centers
and
Telecom
Applications.
in:
Conclusions
Automotive
Powertrain
DC/DC
Converter
with
REFERENCES
14621473.
Babasaki, T., Tanaka, T., Nozaki, Y., Tanaka, T., Aoki, T. and
Current
Powerfeeding
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System.
in:
Telecommunications
Energy
Conference
(INTELEC),
57
EnergySaving
Technology
Using
NextGeneration
Power
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Kim, J. W., You, J. S. and Cho, B. H..Modeling, Control, and
Design
of
InputSeriesOutputParallelConnected
Density
Converter
Using
SiCSBD.
in:
PowerDensity
536544.
and
Applications
(EPE)
2007,
Aalborg,
Efficiency
in
DCDC
Lee, J. P., Min, B. D., Kim, T. J., Yoo, D. W. and Yoo, J. Y..
Interleaved
IEEE
Applied
Power
Electronics
Conference
and
High
Denmark, 2007.
High
and
InputSeriesOutput
Sun, J., Xu, M., Ying, Y. and Lee, F. C.. High Power Density,
58
Yusuke
Hayashi
completed
a
postdoctoral course in engineering at
Osaka University Graduate School in
2004. In April 2004, he joined the AIST
Power Electronics Research Center, in
April 2009 he joined NTT Facilities, and
since May 2013 he has been with Osaka
University. He is engaged in the
research and development of the power quality control in
the distribution system, and the development of the design
methodology for high power density converter using SiC
and GaN power devices. Currently, he is mainly engaged in
the development of the high power density DC power
supply for 380 V DC distribution system.
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